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IKW50N60DTPXKSA1
IGBT, 80 A, 1.6 V, 319.2 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:319.2W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pin
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 319.2W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 3.09 € |
| Current stock | 10+ |
| Lead time | 7 days |
Datasheet
## IGBT
erformance
## IKW50N60DTP
TRENCHSTOP[TM] P erformance
## IKW50N60DTP
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TRENCHSTOP [TM] P erformance<br>**----- End of picture text -----**<br>
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Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>+ low turn-off losses<br>¢ short tail current<br>G<br>* low EMI<br>E<br>* Very soft, fast recovery anti-parallel diode<br>* maximum junction temperature 175°C<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models: =<br>http://www.infineon.com/igbt/<br>Applications:<br>+* drivessolar inverters y 4<br>* uninterruptible power supplies<br>* converters with medium switching frequency<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW50N60DTP|600V|50A|1.6V|175°C|K50DDTP|PG-TO247-3|
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IKW50N60DTP
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## TRENCHSTOP[TM] �P erformance �Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Rev.�2.1,��2016-02-08
IKW50N60DTP
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## TRENCHSTOP[TM] �P erformance �Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Parameter**|**Parameter**|**Symbol**|||**Value**|**Value**||**Unit**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|||_V_CE|||600|||V||
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|||_I_C|||80.0<br>61.0|||A||
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|||_I_Cpuls|||150.0|||A||
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs1)|||-|||150.0|||A||
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|||_I_F|||62.0<br>39.0|||A||
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|||_I_Fpuls|||150.0|||A||
|Gate-emitter voltage|||_V_GE|||±20|||V||
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|||_t_SC|||5|||µs||
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|||_P_tot|||319.2<br>159.6|||W||
|Operating junction temperature|||_T_vj||-40...+175||||°C||
|Storage temperature|||_T_stg||-55...+150||||°C||
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s||||||260|||°C||
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|||_M_|||0.6|||Nm||
|**ThermalResistance**|||||||||||
|**Parameter**|**Symbol **|**Conditions**|||||**Value**|||**Unit**|
||||||**min.**||**typ.**|**max.**|||
|**RthCharacteristics**|||||||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||||-||0.36|0.47||K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||||-||0.62|0.95||K/W|
1) Defined by design. Not subject to production test.
Rev.�2.1,��2016-02-08
4
IKW50N60DTP
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## TRENCHSTOP[TM] �P erformance �Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.60<br>1.94|1.80<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.80mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|78.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1950|-|pF|
|Output capacitance|_C_oes||-|109|-||
|Reverse transfer capacitance|_C_res||-|67|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=50.0A,<br>_V_GE=15V|-|249.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|255|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=7.0Ω,_R_G(off)=7.0Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|215|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|1.53|-|mJ|
|Turn-off energy|_E_off||-|0.85|-|mJ|
|Total switchingenergy|_E_ts||-|2.38|-|mJ|
Rev.�2.1,��2016-02-08
5
IKW50N60DTP
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## TRENCHSTOP[TM] �P erformance �Series
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=870A/µs|-|115|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.75|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|125|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=7.0Ω,_R_G(off)=7.0Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|34|-|ns|
|Turn-off delaytime|_t_d(off)||-|277|-|ns|
|Fall time|_t_f||-|55|-|ns|
|Turn-on energy|_E_on||-|2.25|-|mJ|
|Turn-off energy|_E_off||-|1.39|-|mJ|
|Total switchingenergy|_E_ts||-|3.64|-|mJ|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=870A/µs|-|194|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.15|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|120|-|A/µs|
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Rev.�2.1,��2016-02-08
TRENCHSTOP[TM] erformance
## Series IKW50N60DTP
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**----- Start of picture text -----**<br>
100 UN St o mer 350300 Pf yf fod<br>rea | N<br>Sooo oe) 250 PNP fF pod<br>sZz CMI tp=1µs ro | = X<br>10 200<br>| CMCC]<br>@ | TNE ET<br>150<br>2 HHT THA!<br>eg 1 ee S 100 PF PIN |<br>a<br>EH 50 EaaeNG<br>eeUTVTINE See<br>0.1 0<br>EE CEI EN<br>0.1 1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T j 175°C; V GE=15V) temperature<br>( T j ≤ 175°C)<br>100 130<br>po<br>120<br>VGE=20V<br>NG a<br>110<br>15V<br>| 100 NO<br>75<br>13V<br>90<br>11V<br>80<br>9V<br>70<br>7V<br>50<br>60<br>s |\\V<br>50<br>40<br>25<br>30<br>ny<br>20<br>Ae<br>10 WN<br>0 0<br>a ee<br>25 50 75 100 125 150 175 0 1 2 3 4<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C)
Figure 4. Typical ( _T_ j=25°C)
7
IKW50N60DTP
## TRENCHSTOP[TM] P erformance
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130 100<br>Tj=25°C<br>120 Tj=175°C<br>VGE=20V<br>110 ee ee ee| a ||<br>15V<br>100 en) 13V \Ge a/ a A 75 Li|<br>90<br>\<br>11V<br>wu 80 aX A a~| W<br>9V<br>a 70 wy a<br>7V<br>50<br>INN 7/24<br>60<br>8u 50 | [\\W/] f 7 8 |<br>a SAYY a“<br>40<br>- - /<br>Soe co 25 ei<br>30<br>20<br>XK<br>10 for<br>A<br>0 0<br>0 1 2 3 4 0 2 4 6 8 10<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T j=175°C) ( V CE=20V)<br>3.5<br>a ee<br>IC=25A<br>IC=50A td(off)<br>= = IC=100A [or e ttfd(on) ee<br>: 3.0 | ToT] tr eee<br>Ee 9 Ee titted<br>100<br>eto> pe)LT S e<br>Ee =F a a aSP<br>5 ae“7 Tes aSSa SSSea==Ps ee<br>2.5<br>ae uw a ee ee ee ee eee<br>poe ess<br>PEEO peepee<br>2.0<br>ad eB bere Td<br>| ke 10<br>WwO EE]_— _ n p SSeSo o ==5=<br>4 a - a<br>5 —_— a<br>O — a eeee ee ee<br>1.5<br>ee<br>1.0 1<br>25 50 75 100 125 150 175 1 12 23 34 45 56 67 78 89 100<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V)=15V) (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>I C I C<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)=15V)
_r_ G=7
8
IKW50N60DTP
TRENCHSTOP[TM] P erformance
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**----- Start of picture text -----**<br>
1000 a<br>= td(off)<br>tf<br>I> Loess FCT<br>td(on)<br>In FERRE —<br>tr<br>Po o ee pf |<br>td(off)<br>P i ertettEE tt —_ tf<br>td(on)<br>EP 4 2 tr<br>ty ty 100 a es<br>==<br>9 100<br>a @ f p<br>rs) eeaee ega a<br>Se ee ee eeOO —<br>® CEL] | ter rryT tT | | ® ae<br>Pt ey = ee fT | y<br>fase eee = a<br>10 10<br>0 5 10 15 20 25 30 35 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, V CE =400V, V GE =15/0V, I C=50A,<br>I C =50A, test circuit in Fig. E) r G=7 , test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
6.0 11<br>typ. Eoff<br>min. 10 Eon<br>max. Ets<br>y — Fy,<br>5.0 KO t itty<br>9<br>Q yl<br>- — = ) /<br>8<br>4.0<br>a | ~~<br>7<br>: Sf eB LEE<br>~~ > /<br>5 ~ s [FETT<br>6<br>p) T Tyr y|<br>a 3.0 ~~ N fe 7 |<br>kKoe:Lu - ~ ~ ZzpTmy 5 tT ; 7 yy<br>:= 2.0 SJ »~ e= 4 ft74 4ya<br>: GP titi<br>3<br>HW5 = da -<br>< ” Yo /<br>5i 1.0 LL 2 pace]7 ee ee<br>1<br>“ | |<br>aT 24<br>0.0 0<br> TT |<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction junction temperature function of collector current<br>( I C=0,8mA)=0,8mA) (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction junction ( _I_ C=0,8mA)=0,8mA)
_r_ G=7
9
## TRENCHSTOP[TM] erformance
## IKW50N60DTP Series
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**----- Start of picture text -----**<br>
8 4.0<br>Eoff Eoff<br>Eon Eon<br>7 an Ets eee 3.5 Ets Le<br>2 P eete L ee<br>6 3.0<br>E fiili {tit rprttys peat<br>Bf 5 BL 2.5 ee<br>ee 4 e e 2.0 pero<br>e bocoe e coocpbe Bf | | |<br>ae 3 a 1.5<br>eee: 2 1.0 |] | | fee<br>e [ivi Perri & a<br>1 Pi-ryT | tT ET Ty tt 0.5<br>0 PTL UT TT EE Ty ty 0.0<br>0 5 10 15 20 25 30 35 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
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**----- Start of picture text -----**<br>
(ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>I C =50A, test circuit in Fig. E)<br>**----- End of picture text -----**<br>
Figure 14.
(indload, _V_ CE =400V, _V_ GE =15/0V, _I_ C=50A, _r_ G=7 , test circuit in Fig. E)
**==> picture [474 x 312] intentionally omitted <==**
**----- Start of picture text -----**<br>
6.0 16<br>Eoff 120V<br>Eon 480V<br>5.0 Ets can 14 /<br>: ar n e<br>12<br>g aa _ = 3<br>4.0<br>pT eye 10 [A e<br>3.0 8<br>i = “e a<br>ge Je H [|<br>6<br>r a ep:<br>2.0<br>4<br>ee eee<br>2 ee<br>1.0<br>2<br>pepo A<br>0.0 0<br>300 350 400 450 500 550 600 0 50 100 150 200 250<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=50A)<br>(ind. load, T j =175°C, V GE =15/0V, I C=50A,<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
_r_ G=7
10
Series IKW50N60DTP
TRENCHSTOP[TM] erformance
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**----- Start of picture text -----**<br>
500<br>Ae<br>[ee eefe 450 ne ee<br>ri 400 2<br>1000 |<br>— CCiesoes e 350 LITT TTT Tt ttt ter<br>6 rs Cres eR op LITT I tT tt tt yet tf<br>we fee or 300 eee<br>9 o o Be<br>2 A = 250 PE; tT t_ TT pete ET yy<br>S SOSSLL © PETE Preyyy<br>a. a ~~ EF 200 [TET PeETTTTTT TTT<br>100<br>° 2 ~Lbe tt ett tt Tt tt<br>150<br>——— cee See oe<br>a<br>esee ee 100 oeOe<br>Sa ee 50<br>Ss ERRSTAEAEEESTAEE<br>10 0<br>0 10 20 30 12 13 14 15 16 17 18 19 20<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 400V, start at T j=150°C)<br>16 aa a a |<br>a<br>PF | | tT ft | dt Tt | | en ||<br>14 PP IN eT<br>0.1<br>D=0.5<br>SEN) ys ii mie = lA<br>12<br>0.2<br>a|=E = 10 rT oP toND iLG FATSPreTSA=| 4g TH 0.10.05 TTT1ariCl<br>@ tit) = oa AET 0.02<br>0.01<br>= 8 rT | | | t| IN| NG ft ft ES3 Apets 0.01 Tel<br>— Ne ow a oS single pulse HH<br>= uo Ee<br>o 6 |] E TATTT<br>= tT tT INR YE i<br>a f /f<br>Fe5 4 Py NN 0.001 ATM TTI LETTE ETI ee TEe ETT |<br>| | maui!<br>Pi | PP PP | Z Pam ett | Sees Seeeee E g<br>2 See eee eH a<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.01216198 0.0542188 0.06849304 0.1687298 0.01315813 1.2E-3<br>a | τ i[s]: 3.3E-5 2.0E-4 2.3E-3 0.01219856 0.09700046 1.874087<br>0 fF | [ | ft ft tt ft 1E-4 ee |<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. Typical IGBT transient thermal impedance<br>gate-emitter voltage ( D = t p/T)<br>C<br>I C(SC)<br>t SC thJC<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Short circuit withstand time gate-emitter voltage ( _V_ CE 400V, start at _T_ j 150°C)
11
~~Series~~ IKW50N60DTP
TRENCHSTOP[TM] erformance
**==> picture [482 x 622] intentionally omitted <==**
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300<br>1 Tj=25°C, IF = 30A<br>iii ~~ Tj=175°C, IF = 30A<br>x, OOae em D=0.5 250<br>0.2<br>z 0.1 = (A a<br>< 0 ZA 0.1 .<br>jaS aA,PT TTT TT eT 0.05 Cn|Co} = 200 ~~<br>0.02<br>= eee Ae Tt or ~<br>2 ech 0.01 I 2<br>e wil |<br>i 0.01 erence Ce single pulse «I in opt.<br>I PA ee Cott ia _<br>Eeeet 150<br>EK || Ld<br>Zz A| ~~<br>7A LEII A TTPIM PNET E T U T ETM T >or .<br>0.001<br>s W UC 100 ian<br>- A | || ||<br>PACU TT TT TTT ET PTT<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.03101824 0.1189354 0.1745904 0.268737 0.0286638 1.4E-3<br>τ i[s]: 2.9E-5 1.7E-4 1.7E-3 9.2E-3 0.0630565 1.832934<br>|<br>1E-4 50<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 600 700 800 900 1000 1100 1200 1300<br>t p ,PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical diode transient thermal impedance Figure 22. Typical reverse recovery time as a function<br>as a function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>3.0 30<br>Tj=25°C, IF = 30A Tj=25°C, IF = 30A<br>Tj=175°C, IF = 30A Tj=175°C, IF = 30A<br>2.5 25<br>Ww7 kKae O e_ —<br>O a =<br>z 2.0 aa e 20 “a<br>oO -<br>: 8 Terry<br>> ><br>vi nme Litt<br>Q 1.5 > 15<br>g fe)g tiitiie|<br>: aoe PLT<br>Wwey 1.0 wuw 10 —<br>uw TT PB ITTTTTTT TTT yy<br>: mf<br>tte = LTTE<br>0.5 5<br>0.0 0<br>600 700 800 900 1000 1100 1200 1300 600 700 800 900 1000 1100 1200 1300<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>thJC<br>Z<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 23. Typical function ( _V_ R=400V)
Figure 24.
( _V_ R=400V)
12
TRENCHSTOP[TM] P erformance
## IKW50N60DTP
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0 | 100<br>Tj=25°C, IF = 30A Tj=25°C<br>Tj=175°C, IF = 30A 90 Tj=175°C<br>— Es<br>/<br>_ 80 ee /<br><, -50 =x 70<br>60<br>io or<br>§— -100 \y Q 50<br>8 <x<br>ro = 40<br>ne] oO /<br>xe) re 30 //<br>: ° -150 hbONSs 2i<br>~~<br>20<br>; P|<br>10 7YFZ\ |<br>eZee<br>-200 0<br>600 700 800 900 1000 1100 1200 1300 0.0 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
2.0<br>IF=15A<br>IF=30A<br>IF=60A<br>1.8<br>Ww 1.6<br>Oo<br><x<br>Kk<br>_!<br>> a 1.4 — ~<br>x<br><x<br>a<br>1.2<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
13
IKW50N60DTP
TRENCHSTOP[TM] �P erformance �Series
**==> picture [146 x 65] intentionally omitted <==**
## **Package Drawing PG-TO247-3**
14
Rev.�2.1,��2016-02-08
IKW50N60DTP
**==> picture [146 x 65] intentionally omitted <==**
TRENCHSTOP[TM] �P erformance Series
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
15
Rev.�2.1,��2016-02-08
## IKW50N60DTP
## TRENCHSTOP[TM] P erformance
|Revision History|||
|---|---|---|
|IKW50N60DTP|||
|Revision: 2016-02-08,|Rev. 2.1||
|Previous Revision|||
|Revision<br>Date||Subjects(major changes since last revision)|
|2.1<br>-||Release final datasheet|
## party.
## **Warnings**
16
Updated at March 20, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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