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IKW40N65WR5XKSA1
IGBT, 80 A, 1.4 V, 230 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 230W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.17 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
# IKW40N65WR5
IKW40N65WR5
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Features: C<br>¢ Powerful monolithic diode optimized for ZCS applications<br>* TRENCHSTOP_ 5 technology applications offers:<br>- high ruggedness, temperature stable behavior<br>- very low V CEsat and low E off<br>G<br>- easy parallel switching capability due to positive<br>E<br>temperature coefficient in V CEsat<br>« Low EMI<br>¢ Low electrical parameters depending (dependence) on<br>temperature<br>* Qualified according to JESD-022 for target applications =<br>¢ Pb-free lead plating; ROHS compliant fale<br>« Complete product spectrum and PSpice Models: ro heap<br>http://www.infineon.com/igbt/<br>Applications:<br>y<br>* Welding<br>* PFC<br>¢ ZCS - converters<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW40N65WR5|650V|40A|1.4V|175°C|K40EWR5|PG-TO247-3|
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## Reverse�Conduction�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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IKW40N65WR5
Reverse�Conduction�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=130°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||32.0<br>19.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=130°C|_P_tot||230.0<br>115.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.65|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.85|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.1,��2015-12-10
4
IKW40N65WR5
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## Reverse�Conduction�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.40<br>1.65|1.80<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.40<br>1.50|1.90<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|55.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4755|-|pF|
|Output capacitance|_C_oes||-|45|-||
|Reverse transfer capacitance|_C_res||-|20|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|193.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=20.0Ω,_R_G(off)=20.0Ω,<br>_L_σ=70nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|42|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|432|-|ns|
|Fall time|_t_f||-|16|-|ns|
|Turn-on energy|_E_on||-|0.77|-|mJ|
|Turn-off energy|_E_off||-|0.16|-|mJ|
|Total switchingenergy|_E_ts||-|0.93|-|mJ|
Rev.�2.1,��2015-12-10
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IKW40N65WR5
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## Reverse�Conduction�Series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=900A/µs|-|112|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.65|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|27.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-585|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=20.0Ω,_R_G(off)=20.0Ω,<br>_L_σ=70nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|42|-|ns|
|Rise time|_t_r||-|21|-|ns|
|Turn-off delaytime|_t_d(off)||-|500|-|ns|
|Fall time|_t_f||-|10|-|ns|
|Turn-on energy|_E_on||-|0.82|-|mJ|
|Turn-off energy|_E_off||-|0.24|-|mJ|
|Total switchingenergy|_E_ts||-|1.06|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=900A/µs|-|153|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|32.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1030|-|A/µs|
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IKW40N65WR5
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250<br>PE a<br>100<br>— Sooo] 200<br>ee | 2<br>ge UN<br>10 150<br>oc Pei<br>O ee eee<br>100<br>| a<br>SLU 1<br>NE CT<br>a a 50<br>not for linear use<br>H e<br>oo t<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>I C P tot<br>**----- End of picture text -----**<br>
> Figure 2. Power **temperature** ( _T_ vj ≤ 175°C)
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100 120<br>I VGE = 20V<br>90 max. current limited by bondwire 15V<br>TE] ee<br>100<br>13V<br>80<br>| TT t T |<br>11V<br>ee Se NG<br>70<br>| 80 9V |<br>ONCE ESS<br>60 8V<br>. SSO<br>7V<br>50 60<br>6V<br>pe 40 fo| KB ENN<br>40<br>BA a FAQ<br>30<br>ee ee<br>20<br>20<br>AL ,<br>10<br>FEeee<br>i a) Sa<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>
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120 120<br>VGE = 20V T vj<br>poo ——_ | / [ass]a T vj j<br>15V<br>J i<br>100 13V Ht / 100 foe—- =175°Cee j<br>11V<br>: HL ~ epi) ig<br>80 9V 80<br>WW oHAWW |<br>8V<br>: 7/2 ee<br>5 / 5<br>7V<br>: 60 7 60 ee<br>O / fe)<br>6V<br>: Se) 5V Sp tt<br>40 40<br>O O |<br>: Ny 4 1 | )<br>i NO a<br>20 aay BC<ae 20 pf pf |TiHt<br>eS _/<br>0 ZA 0 P| |A Y<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=175°C)
Figure 6. Typical ( _V_ CE=20V)
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2.00 1000<br>IC = 10A ee<br>IC = 20A i el<br>S 1.75 = IC = 40A a e ee ee ee e ee ee eee<br>Ss a eeee eeeeee<br>3 7 je E td(off) t<br>1.50<br>tf<br>td(on)<br>: = e 100 f= tr [|<br>=Ee eC |<br>D 1.25 D t a ee ee<br>a ul a<br>= a ee ee ee ee eee<br>1.00<br>E —— || 9 a cee<br>0.75<br>10<br>: B [Neo Le<br>Ww o ee<br>o a<br>(e) 0.50 po<br>O| a ee<br>0.25<br>| ot | vt hc} TT<br>0.00 1<br>0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=20 Ω , _R_ G(off)=20 Ω , test circuit in Figure E)
8
IKW40N65WR5
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f=| td(off) TL rE [TT]<br>tf<br>1000 td(on) +<br>tr<br>a. a ee ee ee eee<br>€ ~-rv | | | | ty}<br>Ww<br>100<br>Gf<br>io)F eea ae lla rere ee<br>5 pee| | eT<br>oe<br>10<br>a<br>eS<br>ee<br>1<br>0 10 20 30 40 50 60 70 80 90<br>R G , GATE RESISTANCE [ Ω ]<br>t<br>**----- End of picture text -----**<br>
Figure 9. Typical switching times as a **resistance** (inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _I_ C =40A, dynamic test Figure E)
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1000 eS ESSS<br>eee ee ee SS eee<br>BE 100<br>Ww a a a<br>aS SSS<br>fd eea eee ee eee e eeeee<br>10<br>a<br>a eeee<br>td(off)<br>tf<br>td(on)<br>tr<br>=<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br>
Figure 10.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =40A, _R_ G(on)=20 Ω , _R_ G(off)=20 Ω , test circuit in Figure E)
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6.0 5.0<br>typ. Eoff<br>5.5 min. 4.5 Eon<br>max. Ets<br>- EI LLLL) Foe<br>Bo @ 5.0 x 4.0 ee /<br>fe) i n /<br>gS> 4.5 [ ann eeeeaWw 3.5 f t<br>Ss ee ee ee<br>So) 4.0 |-——~_| Th bo 3.0 y<br>ee eee<br>x 3.5 Pe x 2.5 Va 7<br>ie 3.0 Poe~~ TeoN Q 2.0 LeUZ 4<br>=e ee ee ee ee<br>2.5 1.5<br>uw ~~ = e 7 Z<br>a a<br>) 2.0 ee 1.0<br>ie ° 77 =<br>a<br>[ee]<br>1.5 0.5<br>ee [ee]<br>ne ee a | an<br>1.0 0.0<br>0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter threshold ( of _I_ C=0,4mA) junction temperature
Figure 12. Typical switching energy losses as (inductinductive “load, collector _T_ vj = sutrent, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=20 Ω , _R_ G(off)=20 Ω , dynamic test circuit in Figu
9
IKW40N65WR5
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4.0 3.0<br>Eoff Eoff<br>Eon Eon<br>3.5 Ets Ets<br>= oe = 2.5<br>|) | lr |e<br>3.0<br>REZ AREE -<br>Lu ¢ Lu a tae<br>op)o 77 op)o 2.0 “TO<br>e)a 2.5 YZ e)a<br>Oa Teo O<br>2.0 ° 1.5<br>2 “ a _ ow2 _—4t--<br>i 4 AT i<br>U) a U)<br>Zz 1.5 < Lb Zz<br>1.0<br>Plt Te<br>= 1.0 ema =<br>_ 0.5 _ ft<br>0.5<br>0.0 0.0<br>0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
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**----- Start of picture text -----**<br>
V GE =150/V,<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
T vj =175°C, V CE=400V,<br>I C<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =40A, _R_ G(on)=20 Ω , _R_ G(off)=20 Ω , test circuit in Figure E)
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16 a 1E+4 SS<br>— V CC = 130V a<br>V CC / . a<br>14 — — /.A pota a tf tt<br>S 12 y, [pees Cies<br>Coes<br>nT} /<br>Cres<br>: / - f et<br>1000<br>a 10 | = _— F F<br>ro) J uw a a a<br>> O | a es<br>WWfi 8 TLE YELLL 2e fjpT UT EE ET [TT]<br>inE Ba an S ftI ty yyy yy<br>6<br>be - 100 \<br>fof}< op s REEeeEET Ty<br>Oo PLN<br>- 4 pA;SsA eeSy<br>ieee<br>BAN ee<br>2<br>0 10<br>0 20 40 60 80 100 120 140 160 180 200 0 10 20 30 40 50 60 70 80 90 100<br>Q G , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=40A)
Figure 16.
( _V_ GE
10
IKW40N65WR5
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1<br>**----- End of picture text -----**<br>
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a 1 7<br>weS TUTTI PSL Lega TTI EIN) EBEERESSFE rrt<br>ga | AIL LMPLY7Alll é =FAOst FAAno<br>D = 0.5 D = 0.5<br>aWI 0.1 aI ~atlll/4yPo Bin ESWI aeSaaAliaSe ATTN2 |<br>PE a 0.2 eee BAa AN 0.2<br>2 Serr | peall|<br>4x pAeT 0.1 iS 0.1 BiaTT | All ry TINA | | 0.1 THN Hill<br>0.05 0.05<br>= e207 Ae < pnet|<br>BI A 0.02 aa He EP 0.02 ae CECE<br>r ATIT) RI re<br>F Affero 0.01 rc IL-7 TA Ll 0.01<br>. CA F a Bl ee EE<br>ze single pulse single pulse CO<br>0.01<br>2s edi th --{i) 83 0.01 A Ra Re--| |<br>Ee A Wye tet Et I<br>° A || Ann TP cerry Com telRe fl<br>f i atm tii AIT ET TTT<br>i: 1 2 3 4 i: 1 2 3 4 5 6<br>ri[K/W]: 0.1900805 0.2281325 0.2083299 6.5E-3 ri[K/W]: 1.668204 0.7015919 0.370506 0.1086465 6.5E-3 1.5E-3<br>τ i[s]: 2.4E-4 3.0E-3 0.01446956 0.2121156 τ i[s]: 2.0E-4 1.0E-3 6.3E-3 0.02172364 0.235345 2.062145<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 17. IGBT<br>function<br>( D = t p/T)<br>**----- End of picture text -----**<br>
Figure 18.
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**----- Start of picture text -----**<br>
( D = t p/T)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
250 | 5.0 LS<br>T vj I F T vj I F<br>225 T vj =175°C, I F =20A 4.5 —- T vj =175°C, I F =20A<br>Ems)—- [| [E sms| ) [1<br>[T oe 200 E T ]| te 4.0 EE TE]T<br>Ww 175 e e 3.5 /<br>kb ~~ L /<br>><n ee ee_~ oO ee<br>ee 150 ee 3.0 eee<br>125 2.5<br>: p—| — : <=<br>a ee eee<br>Ww 100 >|} 2.0 a<br>en ee ee<br>75 1.5<br>- ow<br>a ee ee<br>50 1.0<br>25 0.5<br>0 0.0<br>500 600 700 800 900 1000 1100 500 600 700 800 900 1000 1100<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19. Typical of diode ( _V_ R=400V)
Figure 20.
( _V_ R=400V)
11
IKW40N65WR5
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**----- Start of picture text -----**<br>
60 | 0 LS |<br>T vj I F T vj I F<br>—- T vj =175°C, I F =20A -250 —- T vj =175°C, I F =20A<br>_ 50<br><= {p t x,}t}t -500 fa |__| e<br>-750<br>5ef 40 7 LL pte—— — PA<br>- gf |UNUN<br>-1000<br>LL<br>es ee ee ~~ |<br>v: 30 Luimimé -1250<br>_ [—]<br>oOS$y [eT|=_i-Tae Ut] é -1500 ||| |<br>20<br>-1750<br>:S etQQ ft | tT fat<br>ff O<br>-2000<br>10<br>a ee ee<br>-2250<br>0 -2500<br>500 600 700 800 900 1000 1100 500 600 700 800 900 1000 1100<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>120 Ld / 3.00<br>T vj I F<br>110 E—- T vj a =175°C OT 2.75 e—- IF = 20A al<br>I F<br>/<br>100<br>ee<br>2.50<br>90<br>2.25<br>ff) Ptff| TA A P| | ft ft<br>80<br>= | uw<br>Zz / O<br>er; 2.00<br>& 70 i 7) 57e Litt-<br>oOeeQ 60 ee/ 7 / eee>a) 1.75 _j---<br><x<br>g 50 |)oY ye Pr<br>= / = 1.50 —><br>a / oe ——-7<br>a 40<br>1.25<br>30 //<br>1.00<br>a<br>20<br>0.75<br>10<br>SP V A e<br>0 0.50<br>e e eee<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>
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0 LS |<br>T vj I F<br>-250 —- T vj =175°C, I F =20A<br>x,}t}t -500 fa |__| e<br>-750<br>LL pte—— — PA<br>gf |UNUN<br>-1000<br>LL<br>~~ |<br>-1250<br>Luimimé -1500 ||| |<br>-1750<br>etQQ ft | tT fat<br>O<br>-2000<br>-2250<br>-2500<br>500 600 700 800 900 1000 1100<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
12
IKW40N65WR5
Reverse�Conduction�Series
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## **Package Drawing PG-TO247-3**
13
Rev.�2.1,��2015-12-10
IKW40N65WR5
Reverse�Conduction�Series
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## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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IKW40N65WR5
## IKW40N65WR5
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2014-12-05|Preliminarydata sheet|
|1.2|2015-03-27|New dynamicparameters andgraphs|
|1.3|2015-05-12|New dynamicparameters|
|2.1|2015-12-10|Final data sheet|
## party.
## **Warnings**
15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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