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IKW40N65ET7XKSA1
IGBT, 76 A, 1.35 V, 230.8 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 230.8W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 76A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.68 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
## IKW40N65ET7
## TRENCHSTOP[TM]
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Features: C<br>TRENCHSTOP [TM] IGBT 7 technology offering<br>« Very low V CEsat<br>¢ Low turn-off losses<br>¢ Short tail current<br>G<br>¢ Reduced EMI<br>E<br>* Humidity robust design<br>* Very soft, fast recovery anti-parallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant 2<br>*« Complete product spectrum and PSpice Models: tei,<br>http://www.infineon.com/igbt7/<br>Applications:<br>y<br>* Drives<br>-Servo<br>-GPD<br>¢ Industrial Power Supplies G<br>-Industrial UPS C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW40N65ET7|650V|40A|1.35V|175°C|K40EET7|PG-TO247-3|
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Datasheet www.infineon.com
IKW40N65ET7
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## TRENCHSTOP[TM] �IGBT�7
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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Datasheet
IKW40N65ET7
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## TRENCHSTOP[TM] �IGBT�7
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||76.0<br>49.5|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs2)|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||72.0<br>43.5|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤330V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=100°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||230.8<br>115.4|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.65|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.90|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Defined by design. Not subject to production test.
> 2) Clamped inductive load current test for each device, IC=120A, VCC=400V, Tc=25°C, VGE=20V, L=80µH, RG=10 Ω .
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## TRENCHSTOP[TM] �IGBT�7
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.50<br>1.60|1.65<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.60<br>1.55|2.00<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>900|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|20.5|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|2475|-|pF|
|Output capacitance|_C_oes||-|77|-||
|Reverse transfer capacitance|_C_res||-|25|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|235.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current1)<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤3µs<br>_T_vj=150°C|-|205|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|310|-|ns|
|Fall time|_t_f||-|13|-|ns|
|Turn-on energy|_E_on||-|1.05|-|mJ|
|Turn-off energy|_E_off||-|0.59|-|mJ|
|Total switchingenergy|_E_ts||-|1.64|-|mJ|
1) Allowed number of short circuits: <1000; time between short circuits >1s.
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## TRENCHSTOP[TM] �IGBT�7
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|330|-|ns|
|Fall time|_t_f||-|17|-|ns|
|Turn-on energy|_E_on||-|0.45|-|mJ|
|Turn-off energy|_E_off||-|0.26|-|mJ|
|Total switchingenergy|_E_ts||-|0.71|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1779A/µs|-|85|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.95|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|22.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-380|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=2381A/µs|-|59|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|24.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-520|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|20|-|ns|
|Turn-off delaytime|_t_d(off)||-|380|-|ns|
|Fall time|_t_f||-|57|-|ns|
|Turn-on energy|_E_on||-|1.65|-|mJ|
|Turn-off energy|_E_off||-|1.13|-|mJ|
|Total switchingenergy|_E_ts||-|2.78|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|430|-|ns|
|Fall time|_t_f||-|70|-|ns|
|Turn-on energy|_E_on||-|0.84|-|mJ|
|Turn-off energy|_E_off||-|0.59|-|mJ|
|Total switchingenergy|_E_ts||-|1.43|-|mJ|
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## TRENCHSTOP[TM] �IGBT�7
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1660A/µs|-|145|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|35.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-290|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1881A/µs|-|105|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.02|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|35.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-425|-|A/µs|
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IKW40N65ET7
## ~~GBT~~ TRENCHSTOP[TM]
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240 80<br>70<br>200 Kp AEE<br>60<br>eE XC PASSE<br>160<br>50<br>_. SN<br>120 40<br>SERNGEE eee<br>30<br>Seen eee<br>80<br>20<br>ef KE | Te [NS]<br>40<br>10<br>PEN SeenEEE<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>120 120<br>VGE=20V VGE=20V<br>18V 18V<br>100 15V 100 15V<br>12V 12V<br>80 ian 10V 80 =. 10V<br>8V 8V<br>LG N=<br>7V 7V<br>60 60<br>6V 6V<br>5V 5V<br>40 40<br>| (A oe<br>a | \ee<br>20 20<br>| JX ——<br>AA |£ Y&——<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Figure 4.<br>( T vj=25°C) ( T vj=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
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IKW40N65ET7
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
120<br>Tj=25°C /<br>Tj=175°C /<br>/<br>/<br>100<br>80<br>5B<br>ow //<br>a) /<br>S) /<br>w 60 / /<br>e<br>uy<br>5 40<br>20 y<br>0<br>2 4 6 8 10 12 14<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
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**----- Start of picture text -----**<br>
3.0<br>IC=20A<br>IC=40A<br>IC=80A<br>5<br>Zz 2.5 ooo<br>je)<br>al<br>2.0<br>Fe =<<br>:<br>x<br>Li<br>Ei 1.5<br>a<br>©<br>5 1.0 T_T<br>e)<br>O<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 6. Typical a function ( _V_ GE=15V)
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**----- Start of picture text -----**<br>
1000 1E+4<br>— rr rr rr ee 1 | a es ee<br>a H ttd(off)f [[_<br>p a o | td(on) a eees ee<br>tr<br>[| 7 td(off) e e es ee ee I eea ee es<br>| tf e ee ee<br>i t e d(on) 1000 a ee ee ee ee ee<br>tr<br>D my 6 ee ee es<br>ie)i 100 aa a ie)— | | Afeee ee Se<br>uw a a a Pk<br>100<br>Q a ee ee ee ae<br>a a eee<br>0 0 a ee ee ee ee eee<br>= = a err rs<br>B. 10 sea . 4 eee ee ee ee ee<br>po<br>10<br>a a es<br>eea eeee eeeeee eeee eeee -—+Ssa +feses Ge<br>1 Pt | tT 1 P| |EEF J<br>0 20 40 60 80 100 120 0 20 40 60 80 100 120<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=10 Ω , Dynamic test circuit in V GE =15/0V, I C =40A, Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
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IKW40N65ET7
## TRENCHSTOP[TM]
**==> picture [474 x 699] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 6<br>a<br>aa typ.<br>a<br>poo _<br>5<br>e e ee WW<br>f td(off) d Kk<br>tf _!oO<br>td(on)<br>iF 100 ' tr a ss Q 4<br>icp) {_ o r _<br>uw p a o (e)<br>= a es ee oO<br>- po ee Wy<br>3<br>OQ a ee ee ee ae ee<br><=a ee nne no eeeneee -<br>= La<br>10 2<br>2)7 a ee =<br>aa aee Ww<br>a x<br>a es eo)<br>fs es 1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.4mA)<br>I C =40A, R G=10 , Dynamic test circuit in<br>Figure E)<br>14 12<br>EEoffon EEoffon 4<br>12 Ets Ets 444<br>/ 10 ¢<br>z / z /<br>& / = 7<br>10<br>(0 f (0 ra<br>7) / 7) 8 A<br>o o ;<br>Oo / oO :<br>aa) ’ —! 7<br>O)> 8 7 7 // O)> /¢<br>wa / 7 ow :<br>uw v7 7 Ww 6<br>Zz 7 Zz o<br>6<br>o / / o ra , a<br>Zz re Y Zz Fa ° -<br>5 4<br>r<br>4 Vv : a a<br>2<br>2 | “oe — | | Oe a<br>27 a 7== —<br>0 0<br>0 20 40 60 80 100 120 0 20 40 60 80 100 120<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=10 Ω , Dynamic test circuit in V GE =15/0V, I C =40A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
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IKW40N65ET7
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
3.0 4.0<br>Eoff Eoff<br>Eon Eon<br>Ets 3.5 Ets<br>o oo”<br>2.5 oo<br>i o* —_ 7<br>& Prog “ — 3.0 ey] | | le<br>Lu o* uw a<br>op)on 2.0 rd o* op)on a”<br>;@) “7 _ ;@) 2.5 || | ir< |<br>— “7 aa va<br>i 1.5 “| § 2.0 , <“<br>—_ a<br>O — oO ?<br>Z a ae Z 1.5 “ 7<br>1.0 7<br>1.0<br>0.5<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =40A, _R_ G=10 , Dynamic test circuit Figure E)
Figure 14.
(inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =40A, _R_ G=10 , Dynamic test circuit Figure E)
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16<br>130V<br>520V<br>14<br>/<br>S8 12 / /<br>< 10<br>><br>wrui 8 [Ty<br>ul 6<br><x<br>.<br>4<br>2<br>0<br>0 30 60 90 120 150 180 210 240<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=40A)
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**----- Start of picture text -----**<br>
1E+4 TE arsa Rs<br>|1 Cies aa aee aee ee<br>Coes<br>Cres<br>h[a| a a ee ee<br>[$$$a a ee ee<br>1000 / | | | ft<br>a {_<br>O ye<br>rsF Wyee — | |} | ee ee<br>< , oS<br>. 100 ee<br>a<br>as Se ee ee<br>a a eeee<br>ee ee<br>10<br>0 5 10 15 20 25 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
350 1 TT<br>| | | |<br>a<br>= =cu t<br><= 300 y PT T T e lll)<br>L Pf ff / | = ee<br>D=0.5<br>iu 7 SoUEpees |||}<br>a 250 a 0.2 ee<br>o 2 | (I7 0.1 ill<br>w / 5 0.1 Com<br>O — A 0.05 it<br>La© a7d e er A geri 1<br>Ww4 200 4 PT aHW } 0.020.01 |<br>fe / = S02?feaceite single pulse 1<br>150<br>:a) VA FTEa Hl<br>Oo:tK 100 / |/ Pin) e Zee al) 0.01 AUe a0a0)!ealee [EE] 0 Ro Ii]<br>(e)a WA s IBPA | aml!il<br>5<br>. ° a<br>50<br>i: 1 2 3 4<br>ri[K/W]: 0.0816297 0.1784144 0.2340514 0.1559046<br>τ i[s]: 7.9E-5 6.6E-4 9.4E-3 0.0703285<br>0 Py yy 0.001 Pe ee a are os ee e<br>10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical short circuit collector current as a Figure 18. IGBT transient thermal resistance<br>function of gate-emitter voltage ( D = t p/T)<br>( V CE 400vV, T vj 150°C)<br>I C(SC) Z c)th(j-<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1<br>a 2 TT<br>A<br>a<br>= SHner<br>i HoH<br>S Pd<br>aa TT<br>D=0.5<br>we<br>0.2<br>é 7<br>we ain 0.1<br>= 0.1 errnoee Cot<br>(op) LT<br>Ww ie 0.05 |<br>7d aSeni Ze/ A il ee A 1<br>Ee4= Zec/nA| 0.020.01single pulse Ael<br>j<br>: ae mai MRI<br>ZzATI ULI<br>0.01<br>uu 220)( RA<br>2 Sr sti ss sg eee<br>s wae fyae<br>E PATTI TT TE il<br>° ePLAN ee esee ole ot aeeel |<br>i: 1 2 3 4<br>ri[K/W]: 0.03832078 0.2191358 0.3027888 0.3397546<br>τ i[s]: 1.9E-5 2.0E-4 4.2E-3 0.05693028<br>0.001 | LUT LLIN LATIN LUAU 1 A<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
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350<br>Pp]<br>Tj=25°C, IF = 40A<br>Tj=175°C, IF = 40A<br>300<br>, | —<br>\<br>250 \<br>ni<br>=<br>kb<br>> \<br>mT}> 200 \<br>8 \.<br>Ww 150 Sm ao<br>Y '<br>ow8 =<br>v 100 NN<br>™<br>500 Py] ff<br>500 1000 1500 2000 2500 3000<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 20.
( _V_ R=400V)
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## TRENCHSTOP[TM]
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3.5 LE 45 LE<br>Tj=25°C, IF = 40A Tj=25°C, IF = 40A<br>Tj=175°C, IF = 40A Tj=175°C, IF = 40A<br>40<br>3.0 ae e |<br>_ _ 7<br>Ww - 5 35 7<br>2.5<br>ng s w 7<br><= a w 30<br>= 7 5 7<br>2.0<br>ec ra, 25 A<br>WwO ui(e) 4<br>uw 1.5 oO 20 /<br>rt wu Y<br>7p) if /<br>i 15 ,<br>ff 1.0 tH /<br>10<br>0.5<br>; 5 Pf tt]<br>0.0 0<br>500 1000 1500 2000 2500 3000 500 1000 1500 2000 2500 3000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 21.
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**----- Start of picture text -----**<br>
( V R=400V)<br>**----- End of picture text -----**<br>
Figure 22.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
0 120<br>Tj=25°C, IF = 40A Tj=25°C<br>-50 e Tj=175°C, I e F = 40A Tj=175°C<br>N ee ee |<br>\ 100<br>-100<br>=a<br>-150 x<br>80<br>z -200 i \ \ mn |<br>‘=(o} a<br>ei] \\ 8 /<br>© -250 60<br>©<br>8 -300 \ <x=<br>O) \ \ a<br>8 ‘ 2 40<br>. -350<br>5 \ , /<br>q .NN ;<br>-400<br>20<br>-450<br>“<br>-_<br>-500 0<br>500 1000 1500 2000 2500 3000 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
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## TRENCHSTOP[TM]
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3.0<br>IF=20A<br>IF=40A<br>IF=80A<br>2.5<br>Lu 2.0<br>Oo<br><x<br>Kk<br>I<br>><br>Q 1.5<br>20<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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## TRENCHSTOP[TM] �IGBT�7
## **Package Drawing PG-TO247-3**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �IGBT�7
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �IGBT�7
## **Revision�History**
IKW40N65ET7
## **Revision:�2020- 11 - 11 ,�Rev.�2. 2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2020-05-12|Final data sheet|
|2.2|2020-11-11|Additional short circuit specification|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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