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IKW40N65ES5XKSA1
IGBT, 79 A, 1.7 V, 230 W, 650 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:79A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5 Series
- Power Dissipation: 230W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 79A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.77 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
IGBT TRENCHSTOP[TM] IKW40N65ES5 650V TRENCHSTOP TM _ 5 high speed soft switching duopak ## IKW40N65ES5 ## TRENCHSTOP[TM] ## TRENCHSTOP[TM] **==> picture [469 x 256] intentionally omitted <==** **----- Start of picture text -----**<br> Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>¢ Very Low V CEsat , 1.35V at nominal current<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with full rated RAPID 1 fast antiparallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant =<br>*« Complete product spectrum and PSpice Models: Gi,<br>http://www.infineon.com/igbt/<br>Applications:<br>« Resonant converters yf<br>¢ Uninterruptible power supplies<br>* Welding converters<br>* Mid to high range switching frequency converters<br>1<br>Package pin definition: 2<br>3<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKW40N65ES5|650V|40A|1.35V|175°C|K40EES5|PG-TO247-3| 2 IKW40N65ES5 **==> picture [146 x 65] intentionally omitted <==** ## TRENCHSTOP[TM] �5�soft�switching�IGBT ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.�2.2,��2015-10-16 IKW40N65ES5 TRENCHSTOP[TM] �5�soft�switching�IGBT **==> picture [146 x 65] intentionally omitted <==** ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||79.0<br>50.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||160.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||79.0<br>50.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||230.0<br>115.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| |**ThermalResistance**||||| |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.65|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.75|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W| Rev.�2.2,��2015-10-16 4 IKW40N65ES5 **==> picture [146 x 65] intentionally omitted <==** ## TRENCHSTOP[TM] �5�soft�switching�IGBT ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.50<br>1.60|1.70<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.42<br>1.39|1.70<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1700|50<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|45.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF| |Output capacitance|_C_oes||-|71|-|| |Reverse transfer capacitance|_C_res||-|9|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|95.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns| |Rise time|_t_r||-|18|-|ns| |Turn-off delaytime|_t_d(off)||-|130|-|ns| |Fall time|_t_f||-|23|-|ns| |Turn-on energy|_E_on||-|0.86|-|mJ| |Turn-off energy|_E_off||-|0.40|-|mJ| |Total switchingenergy|_E_ts||-|1.26|-|mJ| Rev.�2.2,��2015-10-16 5 IKW40N65ES5 **==> picture [146 x 65] intentionally omitted <==** ## TRENCHSTOP[TM] �5�soft�switching�IGBT |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns| |---|---|---|---|---|---|---| |Rise time|_t_r||-|7|-|ns| |Turn-off delaytime|_t_d(off)||-|143|-|ns| |Fall time|_t_f||-|24|-|ns| |Turn-on energy|_E_on||-|0.39|-|mJ| |Turn-off energy|_E_off||-|0.21|-|mJ| |Total switchingenergy|_E_ts||-|0.60|-|mJ| |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=820A/µs|-|73|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.10|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|23.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1500|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=750A/µs|-|58|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.80|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|22.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1740|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns| |Rise time|_t_r||-|16|-|ns| |Turn-off delaytime|_t_d(off)||-|156|-|ns| |Fall time|_t_f||-|48|-|ns| |Turn-on energy|_E_on||-|1.20|-|mJ| |Turn-off energy|_E_off||-|0.69|-|mJ| |Total switchingenergy|_E_ts||-|1.89|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns| |Rise time|_t_r||-|8|-|ns| |Turn-off delaytime|_t_d(off)||-|184|-|ns| |Fall time|_t_f||-|48|-|ns| |Turn-on energy|_E_on||-|0.60|-|mJ| |Turn-off energy|_E_off||-|0.39|-|mJ| |Total switchingenergy|_E_ts||-|0.99|-|mJ| 6 Rev.�2.2,��2015-10-16 IKW40N65ES5 **==> picture [146 x 65] intentionally omitted <==** ## TRENCHSTOP[TM] �5�soft�switching�IGBT **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=820A/µs|-|120|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|2.60|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|36.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1250|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=750A/µs|-|91|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.80|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|32.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1350|-|A/µs| Rev.�2.2,��2015-10-16 7 5 soft switching IGBT IKW40N65ES5 TRENCHSTOP[TM] **==> picture [233 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 240<br>210<br>NEE<br>180<br>fx)|<br>ef) 150 oN |<br>n<br>»E ON)<br>a 120 \<br>pe) |AL<br>PN 90<br>60<br>PINS)<br>30<br>0<br>25 PTTT 50 75 100 EN 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br> **==> picture [91 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. Power<br>temperature<br>( T vj ≤ 175°C)<br>**----- End of picture text -----**<br> **==> picture [233 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>Ne<br>60<br>ey. EIN<br>Je 50 EN|<br>oO<br>EEN<br>5 40 .<br>ye fo KA<br>ye° 30 EN\<br>20<br>EEE<br>10<br>0<br>25 EPP 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>Figure 2. Collector current as a function of case<br>temperature<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C<br>**----- End of picture text -----**<br> **==> picture [469 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 120 120<br>VGE = 20V VGE = 20V<br>a 18V |e ee ee ee 18V<br>100 15V Alf 100 15V 7(ion<br>12V 12V<br>: A UZ<br>80 10V 80 10V<br>. = Wf<br>8V 8V<br>7V 7V<br>: 60 js 60 Sf<br>f= 8 fit)<br>6V 6V<br>5V 5V<br>40 40<br>20 20<br>A<br>0 0<br>P AN} | L_LAR<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Typical ( _T_ vj=25°C) Figure 4. Typical ( _T_ vj=175°C) 8 IKW40N65ES5 ## TRENCHSTOP[TM] **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 120 3.0<br>Tvj = 25°C IC = 20A<br>Tvj = 150°C IC = 40A<br>IC = 80A<br>ET. Eee<br>100 Po y 2.5<br>i - __-<br>PP [t] | [p] aye Ee fe E e<br>< S b=<br>5 80 P 2.0 <p<br>oe= eewo eeLe--<br>a f ow<br>a)| WwW<br>xv 60 E 1.5 | _<br>a eeee eeeee<br>uwa | e)a ns<br>= 40 a 1.0<br>GO. _<br>20 SRR eee e) 0.5 eee<br>0 0.0<br>2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 5. Typical ( _V_ CE=20V) Figure 6. ( _V_ GE=15V) **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a a 1000 a SSSs<br>i 1 td(off) po aaa i td(off) p o<br>| tf po | tf rr ee ee eee<br>td(on) td(on)<br>tr tr<br>—— —— ——a<br>I ee eee | ee ee<br>e e ee ee ee e eee<br>—2 100 a—BOLss 100 P e<br>e | [P] [oe]<br>uwn[[_rh Ee<br>= a dnca a ee eee |= a aee ee ee ee eee<br>F a eeee a a ltl ees te<br>O a ee ee ee ee re ee ee<br>a ee ee ee ee<br>poet<br>10 10<br>So [_ | dE= fea“<br>ee ee ee ee<br>po po<br>a ee ee a es<br>a a a re<br>1 1<br>0 20 40 60 80 100 120 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>t t<br>**----- End of picture text -----**<br> Figure 7. Figure 8. Typical **resistance** (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=10 Ω , _R_ Goff=10 Ω , test circuit in Figure E) (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _I_ C =40A, dynamic test Figure E) 9 ~~5 soft switching IGBT~~ IKW40N65ES5 ## TRENCHSTOP[TM] **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aaa 6<br>t1 td(off) a aaa typ.<br>| tf min.<br>I td(on) po a ee ee ee ee > max.<br>tr 5<br><x ~<br>ee EFé Toe<br>= S ae<br>zor 100 7 | [| | a 4 ~he<br>— a es _I | ss<br>uw es ee ee I SLL<br>= a ee 7p) _<br>F a ee el Mu ><br>3<br>O a ee ee = —<br>=a eee_— ke > ~S~L<br>E E ~~<br>ep)= 10 a es Ee= 2 ~~ ~<br>s a a Lu ~~<br>aa<br>a ee Ee<br>a ee ee 5<br>1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 9. (inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =40A, _R_ Gon=10 Ω ; _R_ Goff=10 Ω , dynamic circuit in Figure E) Figure 10. Gate-emitter of junction ( _I_ C=0.4mA) **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 8 3.5<br>Eoff Eoff<br>Eon Eon<br>7 Ets Ets<br>/ 3.0 z <a<br>a / = “7<br>5 / 5 a<br>e i]<br>6<br>2.5<br>Ww | | fle | e e<br>io) 7 Ww<br>ep) /vA ioep ) -oo<br>5<br>—! 7 —! Pa<br>> / > 2.0 <<br>O / y, O - a_<br>4<br>th c th _ a<br>WwZ: 3 tt |e/ 7 uw(0): 1.5 = pia -<br>=I Z Zz AO<br>: 4 W4 s 1.0 L a<br>2 cava 4| = “ _——<br>1 a a 0.5 =<br>Zan4 “|<br>0 0.0<br>0 20 40 60 80 100 120 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>E E<br>**----- End of picture text -----**<br> Figure 11. Figure 12. (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=10 Ω , _R_ Goff=10 Ω , test circuit in Figure E) (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _I_ C =40A, dynamic test Figure E) 10 IKW40N65ES5 TRENCHSTOP[TM] **==> picture [474 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5 2.5<br>Eoff Eoff<br>E Eon L) || f Eon e<br>Ets Ets a<br>a a —<br>a) 2.0 a) 2.0<br>” a ” “o<br>pf ee<br>Lu < Lu<br>ep) Uo ep) ia<br>op) - Ip) Y<br>Gf—! 1.5 eer- a 1.5 | Zz<br>Mmpz perm]<= | | —J yeou |ea <<br>eeO ee_— Zz eeea<br>1.0 — 1.0<br>Zz —_— Oo 7 Za<br>o een Zzo “ 4 a<br>ee ee ee<br>ee) 0.5 0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 260 320 380 440 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=0/15V, (inductive load, T vj =150°C, V GE=0/15V,<br>I C =40A, R Gon=10 Ω ; R Goff=10 Ω , dynamic test I C =40A, R Gon=10 Ω ; R Goff=10 Ω , dynamic test<br>circuit in Figure E) circuit in Figure E)<br>16<br>V CC 1E+4 Cies<br>V CC Coes<br>14 Es |.) / Hf F Cres __——a ee<br>a es ee<br>/ a e a d<br>S4<br>12<br>y 1000<br>orc2 10 /7/ S,s) [_———pfee | ee ee<br>Lu 8 / Z Aes<br>E 100 | ~_|<br>=—i ny ~<¢a a| aee a ee es ee<br>ui 6 i o Ee<br>= Oo a<br>s . PppSoN<br>4<br>: 10 pt<br>|<br>aa<br>2 a<br>0 1 Pot<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> Figure 15. ( Typical _I_ C=40A) gate charge Figure 16. ( _V_ GE 11 ~~5 soft switching IGBT~~ IKW40N65ES5 ## TRENCHSTOP[TM] **==> picture [475 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> 1 TT nooo ooo 1 Tnono<br>PTT TTT TTT ||oo<br>a a a PI eo<br>= HEHEHE<br>“, ari = CE<br>ST Se “, ee Tt Te<br>2 LW ;<br>SS a ee D = 0.5 2 TT Ty MLLER D = 0.5<br>BDTTAUY 0.2 LLIN ihTIA Il 0.2<br>0.1 0.1<br>2 0.05 <x f 0.05<br>0.1 0.1<br>na Cc 2 Me<br>0.02 0.02<br>Ww ni Zp a a i<br>== DYpIoYlll AZAYA 0.01 aMET| Ww SYcSa es A eeaatll 0.01 aMTTEET<br>single pulse single pulse<br>a HC AZAZ1 (MCT a Hn) (MTT<br>7 A ea TN EL Veer rm LU<br>g niet A na Ri Ro zg INA CITT CRE Ri Re<br>TD y7A [|] A ee eo | 7L ll 0COT<br>LA [Y||] | ee<br>i: 1 2 3 4 5 i: 1 2 3 4<br>ri[K/W]: 0.06658 0.121299 0.156237 0.156007 0.149876 ri[K/W]: 0.183392 0.250956 0.262884 0.052768<br>τ i[s]: 3.5E-4 6.2E-4 4.2E-3 0.016611 0.078236 τ i[s]: 1.3E-4 1.4E-3 0.013242 0.128239<br>a | "|<br>0.01 0.01<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal impedance Figure 18. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br> Figure 18. Diode function ( _D_ = _t_ p/T) **==> picture [489 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 160 | 3.0 LS|<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 150°C, IF = 40A Tvj = 150°C, IF = 40A<br>140<br>~ nn 2.5 | | —<br>= ~ es<br>120<br>Ww —_—_.<br>2.0<br>-L<br>> 100 oO<br>or ><br>720. @een eee<br>80 1.5<br>wi ia<br>7p) 60 WwW<br>2 eee<br>1.0<br>40<br>0.5<br>; 20 et ff<br>0 0.0<br>400 500 600 700 800 900 1000 400 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> Figure 19. Typical of diode ( _V_ R=400V) Figure 20. ( _V_ R=400V) 12 IKW40N65ES5 ## TRENCHSTOP[TM] **==> picture [476 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 40 0<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 150°C, IF = 40A Tvj = 150°C, IF = 40A<br>EJ). ET<br>35<br>-300<br>kK 30 4<br>i y fo) -600<br>x7<br>: 25<br>-900<br>i § IN<br>20<br>9 ax -1200<br>:<br>15<br>oO<br>QD LU _——<br>Lu -1500 aA<br>10<br>ff O<br>-1800<br>5<br>0 -2100<br>400 500 600 700 800 900 1000 400 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 21. Typical function ( _V_ R=400V) Figure 22. ( _V_ R=400V) **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 120 2.50<br>Tvj = 25°C IF = 20A<br>Tvj = 150°C / IF = 40A<br>aa /! 2.25 IF = 80A<br>100<br>2.00<br>: rT ff TT] |<br>80<br>ZzimE f 7Ww<xOo 1.75 ee<br>E 3<br>3B ><br>a 60 Q 1.50<br><x<br>zt 4 a<br>=~ ed 1.25 - +<br>40<br>1.00<br>20<br>0.75<br>7j/<br>aA<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br> Figure 23. Figure 24. 13 IKW40N65ES5 TRENCHSTOP[TM] �5�soft�switching�IGBT **==> picture [146 x 65] intentionally omitted <==** ## **Package Drawing PG-TO247-3** 14 Rev.�2.2,��2015-10-16 IKW40N65ES5 **==> picture [146 x 65] intentionally omitted <==** TRENCHSTOP[TM] �5�soft�switching�IGBT ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 15 Rev.�2.2,��2015-10-16 IKW40N65ES5 ## TRENCHSTOP[TM] ## IKW40N65ES5 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |0.1|2015-05-26|Target data sheet| |1.1|2015-08-12|Preliminarydata sheet| |2.1|2015-09-22|Final data sheet| |2.2|2015-10-16|Minor change Ic(VCE)Fig. 3 and Fig. 4| ## party. ## **Warnings** 16
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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