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IKW40N60H3FKSA1
IGBT, 40 A, 2.4 V, 306 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:306W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 306W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.84 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## IGBT
## IKW40N60H3
## IKW40N60H3
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Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>* low EMI<br>* Very soft, fast recovery anti-parallel diode<br>G<br>* maximum junction temperature 175°C<br>E<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/ &<br>Applications:<br>* uninterruptible power supplies , =<br>* welding converters ‘A<br>* converters with high switching frequency<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW40N60H3|600V|40A|1.95V|175°C|K40H603|PG-TO247-3|
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IKW40N60H3
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## High�speed�switching�series�third�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Rev.�2.4,��2014-03-12
IKW40N60H3
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## High�speed�switching�series�third�generation
## **Maximum�ratings**
|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||40.0<br>20.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||306.0<br>153.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.49|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||1.50|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.4,��2014-03-12
4
IKW40N60H3
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## High�speed�switching�series�third�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.95<br>2.30<br>2.50|2.40<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.67<br>1.65|2.05<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.58mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>3000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|24.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2190|-|pF|
|Output capacitance|_C_oes||-|112|-||
|Reverse transfer capacitance|_C_res||-|64|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=40.0A,<br>_V_GE=15V|-|223.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|235|-|A|
Rev.�2.4,��2014-03-12
5
IKW40N60H3
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## High�speed�switching�series�third�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=7.9Ω,_L_σ=90nH,<br>_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|33|-|ns|
|Turn-off delaytime|_t_d(off)||-|197|-|ns|
|Fall time|_t_f||-|21|-|ns|
|Turn-on energy|_E_on||-|1.10|-|mJ|
|Turn-off energy|_E_off||-|0.58|-|mJ|
|Total switchingenergy|_E_ts||-|1.68|-|mJ|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|124|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.81|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-332|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=7.9Ω,_L_σ=90nH,<br>_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|29|-|ns|
|Turn-off delaytime|_t_d(off)||-|227|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|1.33|-|mJ|
|Turn-off energy|_E_off||-|0.79|-|mJ|
|Total switchingenergy|_E_ts||-|2.12|-|mJ|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|190|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-290|-|A/µs|
6
Rev.�2.4,��2014-03-12
High speed switching series third generation IKW40N60H3
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120<br>100<br>p——_} —_} 7p A<br>100 || ANE |] r ealo n Tm S ENN e se enatlizaaiannio l ll<br>_ _ P| AL CASONeT<br>80<br>z ME ELH = aH)<br>10 tp=1µs<br>ara3 / N hyaN N \ org3 |SeteAUNhz, 10µs Pmziti AR |a eatsetaes!<br>60<br>or \ N\A \ p—_| 50µs | | i ee ee<br>O Pat ra eee lierA eal<br>100µs<br>: we \ \ Se TTT<br>LP 40 ai ‘Ih NP ee 200µs a<br>8 NN 1 CoH<br>TC=80° ATTN 8 ft 500µs a<br>TC=110° il iil a | DC Ed a<br>20 Te Lantos. \\ ee ee me<br>TC=80°<br>TL| \. AYTN SeeTa |<br>TC=110°<br>oll ih a<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =400V, V GE=15/0V,<br>r G=7,9 Ω )<br>325 80<br>300<br>70<br>275<br>250 AS PKL |<br>60<br>> 225<br>Pé 200 PNCEEAEr bEia 50 ENCE<br>Ee | | N | | |g \<br>< or<br>io) 175<br>PENSE PN<br>40<br>gf] 150 oN<br>Cn | 8<br>= 125 ee am 30<br>SP 100 fo | |EN 8 \<br>20<br>75<br>50<br>10<br>25<br>HEEEEN ELLEN<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ j ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C)
7
High speed switching series third generation IKW40N60H3
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160 120<br>| /,<br>140 VGE=21V VGE=21V<br>100<br>19V 19V<br>Sr, [LL<br>120<br>17V 17V<br>~- 15V reew, |. 80 15V SS /<br>100<br>13V 13V<br>ee 11V 2S 11V -<br>80 60<br>9V 9V<br>60 7V 7V<br>40<br>5V 5V<br>40<br>NY pee Cal<br>20<br>20<br>P A/ S S ) L L~A RS<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>140 4.0<br>Tj=25°C IC=20A<br>Tj=175°C IC=40A<br>IC=80A<br>120 TTY, Eee<br>3.5<br>— /\3 ee<br>P RR<br>~L L EEE de eee<br>100<br>3.0<br>: 771% Foe<br>pL 80 Leys ber<br>2.5<br>0880/40) Gceeeess<br>60<br>J gee<br>2.0<br>SGnn7400| eeecseee<br>40<br>° 7 - fep tf |fl<br>os |e 1.5 Pease<br>20<br>E e4nnae pf |<br>0 1.0<br>we P| | | |<br>5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C I C<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
8
~~High speed switching series third generation~~ IKW40N60H3
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td(off)<br>tf<br>ot=t | ty rt | _ td(on) — tT [tt]<br>tr<br>td(off)<br>tf<br>td(on)<br>my = 100 a tr my<br>l<br>u=F a a ul= 100 a<br>g Po a<br>z fer) gEz Pott<br>B fo Be<br>ee A eee<br>2 Ps : ee ee cca<br>‘J 7<br>| : Ss: epeeeer | iter_-- - : ~<br>/ ; | Lf<br>/<br>/<br>10 10<br>10 20 30 40 50 60 70 80 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=7,9 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
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6.0<br>typ.<br>min.<br>—[ [TT i, 5.5 f = max.<br>td(off) EK ET<br>5.0<br>tf<br>td(on)<br>z 100 tr : ~<br>= | a ™<br>0 a © ) 4.5 > ~~ =<br>4.0<br>= 3.5 Sy<br>E 3.0 S<br>eeorc ¢ ‘<br>2.5<br>10 2.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching times as a function of Figure 12. Gate-emitter threshold voltage as a<br>junction temperature of junction junction temperature<br>(ind. load, V CE =400V, V GE =15/0V, I C=40A, ( I C=0.58mA)=0.58mA)<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 12. Gate-emitter of junction junction ( _I_ C=0.58mA)=0.58mA)
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**----- Start of picture text -----**<br>
r G=7,9<br>**----- End of picture text -----**<br>
9
IKW40N60H3
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**----- Start of picture text -----**<br>
6 4.0<br>Eoff Eoff<br>Eon Eon<br>Ets 3.5 Ets<br>5 , °<br>> ><br>3.0<br>Ww Ww ue<br>7)o 4 2 7)o a<br>2.5<br>—! “ 7 a<br>O / ’ O aa<br>ow ra ’ ow a<br>3 2.0<br>uwZz “; ¢ 3 imZz ”= uc 2<br>Ww v , ¢ Ww ce ac<br>Zz / “ Zz 1.5 2<br>2<br>1.0<br>1<br>a “ly i ® Pee<br>0.5<br>0 0.0<br>10 20 30 40 50 60 70 80 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=7,9=7,9 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
_r_ G=7,9=7,9
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**----- Start of picture text -----**<br>
2.5 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>2.5<br>2.0<br>op) op) a<br>Ww Ww<br>ep)7) 7)ep) 2.0<br>eo) eo)<br>—! 1.5 —!<br>O O “<br>fag fag ce va<br>Ww Ww 1.5 7<br>Z Z oa<br>Ww Ww | ue<br>z 1.0 Zz a Ul<br>1.0<br>0.5<br>; ee<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =400V, V GE =15/0V, I C=40A, (ind. load, T j =175°C, V GE =15/0V, I C=40A,<br>r G=7,9 , test circuit in Fig. E) r G=7,9 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
10
IKW40N60H3
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**----- Start of picture text -----**<br>
16<br>120V<br>480V<br>14<br>1000<br>12<br>Wu / 7 a ee Cies |<br>U) / ’ _ a ee Coes | [|] —<br>Cres<br>a 10 ‘ S FO e e<br>o} ‘ Ww ay<br>uwff 8 a <a % =<br>La 9 . ~<br>HW 6 0 100 a<br>E - a eT<br>< poe<br>4<br>2<br>0 10<br>0 50 100 150 200 250 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 17. Typical ( _I_ C=40A)
Figure 18.
( _V_ GE
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**----- Start of picture text -----**<br>
560 15<br>= 520 {Ltt<br>480<br>i tT itil tyAz 12 LittlSRRRREEEEEttt<br>440<br>petit Ae Re<br>gS ft Ls BRS<br>a 400 L | NN<br>F ~ N<br>es tiLZ 9 NS<br>360<br>g C E SA<br>320<br>=e TPPPry é LE] PN<br>fi |vty aN<br>280<br>J 3 6 ™<br>O w N<br>240<br>Pilly ys PP yy<br>O / =<br>z 200 S<br>L 7p) 3<br>P| so<br>160<br>“ TYEEPEPeee} LLP EEE LL<br>120<br>80 0<br>10 12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19.
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**----- Start of picture text -----**<br>
( V CE 400V, start at T j=25°C)<br>**----- End of picture text -----**<br>
Figure 20.
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**----- Start of picture text -----**<br>
( V CE 400V, start at T j 150°C)<br>**----- End of picture text -----**<br>
11
IKW40N60H3
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on on on on oo oo Loo<br>Sciacca 1<br>me es ee<br>ee ee ee WI Ni |<br>D=0.5 D=0.5<br>8 ine: au = EHH CH<br>iW 0.1 A Tn 0.2 iW 7 0.2<br>gaWW HHeeEe 0.1 POT|Ta a PTILL aCIICyaCag? cccCoil 0.1 UIT<br>ee, 0.05 IIR WW TMM YA WT 0.05<br>0.1<br>0.02 0.02<br>2 CC ree TTT 2 FRR<br>< Cr wnanl Chee tH 0.01 ES ar mm a 0.01<br>2 TAYeb ll CM Coa eeeCea CT<br>single pulse single pulse<br>E mail Tee Ee i Her sn Hl<br>EL ar a a es<br>Ee 0.01 ay ial ail Ee Maal) Lf<br>% Seer ae atheee eTS E N ET Lu 0.01 TMI NL er VL I<br>eeF° AaBPAPail i Ri GHG| Ro ms o_oESOATroCo CONooo Ri Ha Vie, cetteRo tn}i_|ll<br>a a il ° | A |<br>| A CTH AML Cc<br>i: 1 2 3 4 5 i: 1 2 3 4<br>ri[K/W]: 0.02540725 0.09179841 0.1302573 0.1893012 0.0532358 ri[K/W]: 0.3399738 0.4445632 0.5814618 0.1348257<br>τ i[s]: 1.3E-5 1.3E-4 1.4E-3 0.01830399 0.1308576 τ i[s]: 1.3E-4 1.5E-3 0.01821425 0.09207449<br>0.001 |ee| 0.001 Ll |<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance Figure 22. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>( D = t p/T)<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>
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250 2.5<br>Tj=25°C, IF = 40A Tj=25°C, IF = 40A<br>Tj=175°C, IF = 40A Tj=175°C, IF = 40A<br>225<br>z S 2.0<br>200<br>P opom Bf<br>- tee =<br>>PL 175 heoO Re<br>1.5<br>O°:e) 150 Bf>fe)<br>ww 1.0<br>(op)P: 125 [-——_C T T)T Ww2 E f ET<br>i 100 Py) | ee<br>0.5<br>75 PF i typ td<br>50 0.0<br>800 1000 1200 1400 1600 800 1000 1200 1400 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 23. Typical of diode ( _V_ R=400V)
Figure 24.
( _V_ R=400V)
12
IKW40N60H3
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24 0<br>Tj=25°C, IF = 40A Tj=25°C, IF = 40A<br>Tj=175°C, IF = 40A Tj=175°C, IF = 40A<br>22 a<br>e e a<br>ke a o7 a<br>20 -200<br>5&pe 18 a“ eee° bsP|| ON><br>eae3 16 2 LK-= ma—] 82 -400 SCmM ~~ =<br>Pta 14 |eaoO FR‘,<br>Peleg LL oma o \ S<br>12 Te -600 EA<br>ee ee<br>10<br>8 -800<br>800 1000 1200 1400 1600 800 1000 1200 1400 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 25. Typical function ( _V_ R=400V)
Figure 26.
( _V_ R=400V)
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60 2.50<br>Tj=25°C IF=10A<br>Tj=175°C IF=20A<br>IF=40A<br>50 2.25<br>= 40 uw 2.00<br>zg//O:<br>ag / 5<br>3Q 30 [ > 1.75<br>of <<br>Ss= =a<br>rs 20 O255500 1.50<br>10 1.25<br>0 1.00<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 27.
Figure 28.
13
IKW40N60H3
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High�speed�switching�series�third�generation
## PG-TO247-3
14
Rev.�2.4,��2014-03-12
IKW40N60H3
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## High�speed�switching�series�third�generation
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15
Rev.�2.4,��2014-03-12
IKW40N60H3
## IKW40N60H3
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2010-06-14|Release of final datasheet|
|2.2|2010-10-14|Updated IGBT switchingconditions|
|2.3|2013-12-10|New value ICES max limit at 175°C|
|2.4|2014-03-12|Max ratings Vce, Tvj ≥25°C|
## **Information**
## **Warnings**
endangered.
16
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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