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IKW40N60DTPXKSA1
IGBT, 67 A, 1.6 V, 246 W, 600 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 246W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 67A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 1.98 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT TRENCHSTOP[TM] erformance ## IKW40N60DTP TRENCHSTOP[TM] P erformance ## IKW40N60DTP **==> picture [167 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> TRENCHSTOP [TM] P erformance<br>**----- End of picture text -----**<br> **==> picture [469 x 298] intentionally omitted <==** **----- Start of picture text -----**<br> TRENCHSTOP [TM] P erformance series<br>Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>+ low turn-off losses<br>¢ short tail current<br>G<br>* low EMI<br>E<br>* Very soft, fast recovery anti-parallel diode<br>* maximum junction temperature 175°C<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models: =<br>http://www.infineon.com/igbt/<br>Applications:<br>+* drivessolar inverters y 4<br>* uninterruptible power supplies<br>* converters with medium switching frequency<br>G<br>C<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKW40N60DTP|600V|40A|1.6V|175°C|K40DDTP|PG-TO247-3| 2 IKW40N60DTP **==> picture [146 x 65] intentionally omitted <==** ## TRENCHSTOP[TM] �P erformance �Series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.�2.1,��2016-02-08 IKW40N60DTP **==> picture [146 x 65] intentionally omitted <==** ## TRENCHSTOP[TM] �P erformance �Series ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Parameter**|**Parameter**|**Symbol**|||**Value**|**Value**||**Unit**|**Unit**| |---|---|---|---|---|---|---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|||_V_CE|||600|||V|| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|||_I_C|||67.0<br>48.0|||A|| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|||_I_Cpuls|||120.0|||A|| |Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs1)|||-|||120.0|||A|| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|||_I_F|||58.0<br>35.0|||A|| |Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|||_I_Fpuls|||120.0|||A|| |Gate-emitter voltage|||_V_GE|||±20|||V|| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|||_t_SC|||5|||µs|| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|||_P_tot|||246.0<br>123.0|||W|| |Operating junction temperature|||_T_vj||-40...+175||||°C|| |Storage temperature|||_T_stg||-55...+150||||°C|| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s||||||260|||°C|| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|||_M_|||0.6|||Nm|| |**ThermalResistance**||||||||||| |**Parameter**|**Symbol **|**Conditions**|||||**Value**|||**Unit**| ||||||**min.**||**typ.**|**max.**||| |**RthCharacteristics**||||||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||||-||0.41|0.61||K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||||-||0.83|1.29||K/W| 1) Defined by design. Not subject to production test. Rev.�2.1,��2016-02-08 4 IKW40N60DTP **==> picture [146 x 65] intentionally omitted <==** ## TRENCHSTOP[TM] �P erformance �Series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.60<br>1.94|1.80<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.64mA,_V_CE=_V_GE|4.1|5.1|5.7|V| |Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|40.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1400|-|pF| |Output capacitance|_C_oes||-|76|-|| |Reverse transfer capacitance|_C_res||-|48|-|| |Gate charge|_Q_G|_V_CC=480V,_I_C=40.0A,<br>_V_GE=15V|-|177.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|183|-|A| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.1Ω,_R_G(off)=10.1Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns| |Rise time|_t_r||-|30|-|ns| |Turn-off delaytime|_t_d(off)||-|222|-|ns| |Fall time|_t_f||-|18|-|ns| |Turn-on energy|_E_on||-|1.06|-|mJ| |Turn-off energy|_E_off||-|0.61|-|mJ| |Total switchingenergy|_E_ts||-|1.67|-|mJ| Rev.�2.1,��2016-02-08 5 IKW40N60DTP **==> picture [146 x 65] intentionally omitted <==** ## TRENCHSTOP[TM] �P erformance �Series |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1175A/µs|-|87|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|0.56|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|11.5|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|144|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.1Ω,_R_G(off)=10.1Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns| |Rise time|_t_r||-|30|-|ns| |Turn-off delaytime|_t_d(off)||-|273|-|ns| |Fall time|_t_f||-|47|-|ns| |Turn-on energy|_E_on||-|1.63|-|mJ| |Turn-off energy|_E_off||-|1.05|-|mJ| |Total switchingenergy|_E_ts||-|2.68|-|mJ| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1175A/µs|-|144|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.52|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|18.3|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|142|-|A/µs| 6 Rev.�2.1,��2016-02-08 ## TRENCHSTOP[TM] erformance ## IKW40N60DTP Series **==> picture [233 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>_<br>200 Ne} po<br>Z .<br><x<br>Oo \<br>| 150 \<br>ra) \<br>\<br>100<br>e)&& \<br>50 \ \<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br> **==> picture [249 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>a<br>_ YT TT TAT TT Ta _<br>x a tp=1µs<br>6B LUA Z<br>a <x<br>10<br>ee=) Pt tt tt tt Oo<br>Oad eteet te |<br>e) ed<br>BH |YT TT TT ra)<br>eg ae<br>SLU. 1 Pt| e)&&<br>a eeeee<br>ee<br>0.1<br>0.1 1 10 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area<br>( D =0, T C =25°C, T j 175°C; V GE=15V)<br>I C P tot<br>**----- End of picture text -----**<br> > Figure 2. Power **temperature** ( _T_ j ≤ 175°C) **==> picture [469 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 80 110<br>100<br>VGE=20V<br>90 15V<br>60<br>a 80 13V rae<br>11V<br>WW: RWWWW: 70 AVE<br>pO z WN<br>9V<br>60<br>g E 1] [AAA] 7V<br>40<br>50<br>—_<br>40<br>° ° ) (A<br>30<br>20 | a<r/\<br>20<br>10 PY \ \ | |<br>> aY Sa<br>0 0<br>e e<br>25 50 75 100 125 150 175 0 1 2 3 4<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C) Figure 4. Typical ( _T_ j=25°C) 7 ## IKW40N60DTP ## TRENCHSTOP[TM] P erformance **==> picture [471 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 110 100<br>Tj=25°C<br>100 Po Tj=175°C<br>A<br>VGE=20V<br>tf > a a<br>90 15V<br>/<br>75<br>80 13V<br>z WNLZ | ,<br>11V<br>70<br>9V a<br>a 60 WIE] § :<br>7V<br>50<br>a } a<br>50<br>OO<br>PT ORE<br>ag 40 \/WY7X —— _I<br>gS 30 |a|WS7| 8g 25 |<br>20<br>10<br>0 0<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V CE COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br> Figure 5. Typical ( _T_ j=175°C) Figure 6. Typical ( _V_ CE=20V) **==> picture [471 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>a a ee<br>IC=20A<br>IC=40A es<br>== IC=80A td(off) ee<br>tf<br>PS 3.0 T EP td(on) aa<br>tr<br>E a<br>100<br>: e eos ee =a_ __<br>> = Q a<br>Ep(t- seg a S a SeSScae<br>2.5<br>a =<br>Pee saraTeWw poeae ee eeee<br>a eo | | jut] ft |<br>WW = :<br>2.0<br>poOke de—_ _ EF 10 a “<br>Lu22a.45=_—— 2) —---—— a<br>a ee<br>rs) tea a eeee ee eee<br>1.5<br>| aSoe ee eee ee<br>1.0 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V)=15V) (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V)=15V) _r_ G=10,1 8 IKW40N60DTP TRENCHSTOP[TM] P erformance **==> picture [474 x 321] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a<br>= td(off) SSS CET<br>tf<br>I td(on) FERRERS| —— TT<br>Pom tr sCOCOteeer Eee feT e<br>td(off)<br>tf<br>e r td(on)<br>Eiht tr<br>100<br>ty yy 2<br>=9 100 ty= a e es eee<br>= @ p o<br>rs) Eeea aes OL<br>Pe frrrerrerrrrrrr<br>@ rrr) 2 |<br>6 PPresc eee} ef<br>| PSeL eer<br>Pt | | eee et etryToa)| 6 |,v7<br>Tere TELE EL <<br>10 10<br>0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, V CE =400V, V GE =15/0V, I C=40A,<br>I C =40A, test circuit in Fig. E) r G=10,1 , test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br> **==> picture [471 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0 8<br>typ. Eoff<br>min. Eon<br>max. 7 Ets<br>s PE | El li tL<br>5.0<br>= = /<br>6<br>4.0<br>5<br>Ir /<br>op) ~~ > / /<br>ia3 sto ~AmS ow3 yj<br>LT 3.0 i Ww 4<br>- ~~ Zz /<br>iad Lu 7 7<br>Lu ~ o) ra 7<br>E \ Zz 3 7<br>iuS 2.0 ~ ae / / 4 7<br>im = 2 va Z ~.<br>1.0<br>| 1 ep TT<br>Eee<br>0.0 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction junction temperature function of collector current<br>( I C=0,64mA)=0,64mA) (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Gate-emitter of junction junction ( _I_ C=0,64mA)=0,64mA) _r_ G=10,1 9 TRENCHSTOP[TM] P erformance ## IKW40N60DTP **==> picture [489 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 6 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>5 EEE 2.5 a Le<br>£& E ea = _e—<br>Lu “ W ae<br>7)2o 4 TLL ery 7)7p) 2.0 > - ~<br>—S TTT etyY —g U- _<br>> 7 > a7<br>w _-<br>2 TLLLer<br>3 1.5<br>ow2 LL |er dye2 =<br>Goer<br>Zz — (o) a<br>O ti Ler ty é = --T7 aa<br>¢ 2 Zz 1.0 ao<br>CT _<br>|e 1 (Leeretl] §§ 0.5 ae—<br>0 0.0<br>0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (indload, V CE =400V, V GE =15/0V, I C=40A,<br>I C =40A, test circuit in Fig. E) r G=10,1 , test circuit in Fig. E)<br>6.0 16<br>Eoff 120V<br>Eon 480V<br>Ets 14<br>_Ss 5.0 /<br>£&o 4 >ow 12 / /<br>4.0<br>oD4aoF un | @<_ 10 / //<br>“<br>3.0 olf 8<br>Ww va —_ —<br>6<br>2.0<br>== - — ao | fe)- 4<br>aaa | +r<br>1.0<br>2<br>0.0 0<br>300 350 400 450 500 550 600 0 50 100 150 200<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=40A)<br>(ind. load, T j =175°C, V GE =15/0V, I C=40A,<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> _r_ G=10,1 10 IKW40N60DTP Series TRENCHSTOP[TM] erformance **==> picture [471 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>aes PIT TTT TTT yyy<br>1000 eea ee e e =: 300 Titelett yy yeKL<br>ee eeoe e Cies e | 62 250 ee[itteeeeeeeZd e nee<br>Coes<br>Cres<br>e e<br>9 [ = 200 A<br>| ee Ae<br>150<br>R 100 s et<br>a O<br>100<br>50<br>pe] *<br>10 0<br>0 10 20 30 12 13 14 15 16 17 18 19 20<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 400V, start at T j=25°C)<br>C<br>I C(SC)<br>**----- End of picture text -----**<br> **==> picture [469 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 16 pip ft tt | a EHC HTEa Free a a Ht |<br>Ne ee<br>ee 14<br>0.1<br>D=0.5<br>SPN Sl<br>12<br>= a EAH 0.2 |<br>0.1<br>S a Se eae Sea<br>< 10 PaaeNeEee ee iP ae 0.05<br>2 a LL YANN TT 0.02 1<br>e POPPE NEO. 0.01 eee il<br>= 8 | >PDDD NI] 2 GeezHeTete CT 0.01 lll<br>single pulse<br>5 rt | Ff f fot AGE x eal ee CCU<br>So TE cacy Aeeclees a eee eeea<br>6<br>a | | | | ft fF fo) NY TE Conn Coo<br>: ee 22 SAHAULTR N A EH T RA<br>4 0.001 LN IM amt<br>. ~<br>2 See eee eH a Cy=1;/R, C2=te/Re<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.01470005 0.07635961 0.09972334 0.1994667 0.0170487 1.3E-3<br>pe) C τ i[s]: 3.4E-5 1.9E-4 2.1E-3 S 0.01129602 0.08484332 1.853814<br>0 | | | | | | | | ft ft | 1E-4 ee |<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. Typical IGBT transient thermal impedance<br>gate-emitter voltage ( D = t p/T)<br>( V CE 400V, start at T j 150°C)<br>t SC thJC<br>Z<br>**----- End of picture text -----**<br> 11 TRENCHSTOP[TM] P erformance ## IKW40N60DTP **==> picture [482 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>1 Tj=25°C, IF = 20A<br>Tj=175°C, IF = 20A<br>> iy ~~<br>S eaH a e<br>4 so<br>D=0.5<br>200<br>0.2<br>ST z 0.1 ey (A a<br>ae A 0.1 \<br>jaS PTeeea AZtH 0.05 |Cn Co} = XN<br>= YM 0.02 EA or<br>epsn 0.01 150 :<br>0.01 single pulse<br>Iee ee Se tee SS et Cott mo _<br>EK =<br>Zz ee|)<br>7A a or<br>ae a a > Ty<br>100<br>© 0.001 See(Mett memetts emeEst 0 meme “||Ei 2. —~PL<br>- CC | Aet cer, CyateiRe|||HI<br>Aa<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.03891365 0.1843676 0.2443055 0.3230286 0.04259767 1.4E-3<br>τ i[s]: 2.9E-5 1.5E-4 1.3E-3 7.7E-3 0.05008655 1.821936<br>|<br>1E-4 50<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 600 700 800 900 1000 1100 1200 1300 1400<br>t p ,PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical diode transient thermal impedance Figure 22. Typical reverse recovery time as a function<br>as a function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>2.0 30<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=175°C, IF = 20A Tj=175°C, IF = 20A<br>25<br>Lu7 1.5 FO IL— Kke L E T TE<br>ae -_ |-- oc TTL<br><x or 20<br>a: =)ae Gee eeee<br>Wwiaé>Q: 1.0 Wwuwé>fe)S$ 15 FTLLerta LL Le= LTERTTEp<br>: we TELE be =<br>10<br>2 | eee rey<br>: TATE 2 BRREOD eae<br>0.5 |_| | | | + t+ aa LL Ltr<br>ci fee<br>5<br>: TATA TH = TELE<br>0.0 0<br>600 700 800 900 1000 1100 1200 1300 1400 600 700 800 900 1000 1100 1200 1300 1400<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>thJC<br>Z<br>Q rr I rr<br>**----- End of picture text -----**<br> Figure 23. Typical function ( _V_ R=400V) Figure 24. ( _V_ R=400V) 12 IKW40N60DTP ## TRENCHSTOP[TM] P erformance **==> picture [473 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 0 60<br>SS / }<br>Tj=25°C, IF = 20A Tj=25°C<br>Tj=175°C, IF = 20A Tj=175°C<br>— — | /<br>50 /;/<br>=a<br><, -50 q = [x]<br>40<br>6 ‘ N Pa<br>5 a<br>2 AN a)S)<br>-100 30<br>~<br>© <x<br>[ou2 X = / /<br>oO) ia //<br>20<br>x el P| | pl<br>ne}. NN .<br>-150<br>10<br>c<br>7<br>-200 0<br>600 700 800 900 1000 1100 1200 1300 1400 0.0 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 25. Figure 26. ( _V_ R=400V) **==> picture [233 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>IF=10A<br>IF=20A<br>IF=40A<br>1.8<br>Ww 1.6<br>Oo<br><x<br>Kk<br>_!<br>> Q 1.4 —<br>x<br><x<br>a<br>1.2<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 27. 13 IKW40N60DTP TRENCHSTOP[TM] �P erformance �Series **==> picture [146 x 65] intentionally omitted <==** ## **Package Drawing PG-TO247-3** 14 Rev.�2.1,��2016-02-08 IKW40N60DTP **==> picture [146 x 65] intentionally omitted <==** TRENCHSTOP[TM] �P erformance �Series ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 15 Rev.�2.1,��2016-02-08 ## IKW40N60DTP ## TRENCHSTOP[TM] P erformance |Revision History||| |---|---|---| |IKW40N60DTP||| |Revision: 2016-02-08,|Rev. 2.1|| |Previous Revision||| |Revision<br>Date||Subjects(major changes since last revision)| |2.1<br>-||Release final datasheet| ## party. ## **Warnings** 16
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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