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IKW40N120T2FKSA1
IGBT, 75 A, 1.75 V, 480 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:480W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; N
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 480W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.24 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IKW40N120T2 TRENCHSTOP™ 2[nd] Generation Series Cn ~~fincon~~ Low Loss DuoPack : IGBT in 2[nd] generation TRENCHSTOP™ with soft, fast recovery anti-parallel Emitter Controlled Diode C Best in class TO247 Short circuit withstand time – 10s Designed for : G - Frequency Converters E - Uninterrupted Power Supply g
- TRENCHSTOP™ 2[nd] generation for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- Easy paralleling capability due to positive temperature coefficient in VCE(sat)
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PG-TO-247-3<br>**----- End of picture text -----**<br>
- Low EMI
- Low Gate Charge
- Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
- Qualified according to JEDEC[1] for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
|**Parameter**|**Symbol**<br>~~———~~|**Value**<br>~~———~~|**Unit**|
|---|---|---|---|
|Collector-emitter voltage|_V_C E<br>~~———~~|1200<br>~~———~~|V|
|DC collector current (_Tj_=150°C)<br>_T_C= 25C<br>_T_C= 110C|_I_C<br>~~|~~|752<br>40<br>~~|~~|A|
|Pulsed collector current,_t_plimited by_T_jmax|_I_C p u l s<br>~~|~~|160<br>~~|~~||
|Turn off safe operating area<br>_V_CE1200V,_T_j 175C|_-_<br>~~fo~~|160<br>~~fo~~||
|DC Diode forward current (_Tj_=150°C)<br>_T_C= 25C<br>_T_C= 110C|_I_F<br>~~fo~~<br>~~|~~|752<br>40<br>~~fo~~<br>~~|~~||
|Diodepulsed current,_t_plimited by _T_jmax|_I_Fpu l s<br>~~|~~<br>~~ee~~|160<br>~~|~~<br>~~ee~~||
|Gate-emitter voltage|_V_G E<br>~~ee~~|20<br>~~ee~~|V|
|Short circuit withstand time3) <br>_V_GE= 15V,_V_CC600V,_T_j,start 175C|_t_S C<br>~~ee~~<br>~~fo~~|10<br>~~ee~~<br>~~fo~~|s|
|Power dissipation<br>_T_C= 25C|_P_t o t<br>~~fo~~|480<br>~~fo~~|W|
|Operating junction temperature|_T_ j <br>~~—-~~|-40...+175<br>~~—-~~|C|
|Storage temperature|_T_s t g<br>~~—-~~|-55...+150<br>~~—-~~||
|Soldering temperature, 1.6mm (0.063 in.) from case for 10s<br>Wavesolderingonly, temperature on leads only|-<br>~~Pf~~|260<br>~~Pf~~||
- 1 J-STD-020 and JESD-022
- 2 Limited by bond wire
- 3) Allowed number of short circuits: <1000; time between short circuits: >1s.
Rev. 2.4 23.09.2014
1
IFAG IPC TD VLS
IKW40N120T2
TRENCHSTOP™ 2[nd] Generation Series
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## **Thermal Resistance**
|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**|
|**Characteristic**|||||
|IGBT thermal resistance,<br>junction – case|_R_t h J C||0.31|K/W|
|Diode thermal resistance,<br>junction – case|_R_t h J C D||0.53||
|Thermal resistance,<br>junction – ambient|_R_t h J A||40||
## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified
|**Electrical Characteristic,**at_T_j= 25C,|unless othe|rwise specified|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Static Characteristic**|||||||
|Collector-emitter breakdown voltage|_V_ (B R)C E S|_V_G E=0V,_I_C=500µA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_C E ( s a t )|_V_G E= 15V,_I_C=40A<br>_T_j=25C<br>_T_j=150C<br>_T_j=175C|-<br>-<br>-|1.75<br>2.25<br>2.3|2.2<br>-<br>-||
|Diode forward voltage|_V_F|_V_G E=0V,_I_F=40A<br>_T_j=25C<br>_T_j=150C<br>_T_ j=175C|-<br>-<br>-|1.75<br>1.80<br>1.80|2.2<br>-<br>-||
|Gate-emitter threshold voltage|_V_G E ( t h )|_I_C=1.5mA,_V_C E=_V_G E|5.2|5.8|6.4||
|Zero gate voltage collector current|_I_C E S|_V_C E=1200V,<br>_V_G E=0V<br>_T_j=25C<br>_T_j=150C<br>_T_j=175C|-<br>-<br>-|-<br>-<br>-|0.4<br>4.0<br>20|mA|
|Gate-emitter leakage current|_I_G E S|_V_C E=0V,_V_G E=20V|-|-|200|nA|
|Transconductance|_g_f s|_V_C E=20V,_I_C=40A|-|21|-|S|
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IFAG IPC TD VLS
IKW40N120T2
TRENCHSTOP™ 2[nd] Generation Series
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## **Dynamic Characteristic**
|**Dynamic Characteristic**|||||||
|---|---|---|---|---|---|---|
|Input capacitance|_C_i s s|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|2360|-|pF|
|Output capacitance|_C_o s s||-|230|-||
|Reverse transfer capacitance|_C_r s s||-|125|-||
|Gate charge|_Q_G a t e|_V_C C=960V,_I_C=40A<br>_V_G E=15V|-|192|-|nC|
|Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|13|-|nH|
|Short circuit collector current1)|_I_C ( S C )|_V_G E=15V,_t_S C10s<br>_V_C C= 600V,<br>_T_j, s t a r t= 25C<br>_T_j. s t a r t= 175C|-|220<br>156|-|A|
## **Switching Characteristic, Inductive Load,** at _T_ j=25 C
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d(o n)|_T_j=25C,<br>_V_C C=600V,_I_C=40A,<br>_V_G E=0/15V,<br>_R_G=12,<br>_L_<br>_2 )_=80nH,<br>_C_<br>_2 )_=67pF<br>Energy losses include<br>“tail” and diode reverse<br>recovery.|-|33|-|ns|
|Rise time|_t_r||-|28|-||
|Turn-off delaytime|_t_d(o f f)||-|314|-||
|Fall time|_t_f||-|94|-||
|Turn-on energy|_E_o n||-|3.2|-|mJ|
|Turn-off energy|_E_o f f||-|2.05|-||
|Total switchingenergy|_E_t s||-|5.25|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_r r|_T_j=25C,<br>_V_R=600V,_I_F=40A,<br>_di_F_/dt_=950A/s|-|285|-|ns|
|Diode reverse recoverycharge|_Q_r r||-|3.3||µC|
|Diodepeak reverse recoverycurrent|_I_r r m||-|23||A|
|Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_r r_/dt_||-|350|-|A/s|
> 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
> 2) Leakage inductance _L_ and Stray capacity _C_ due to dynamic test circuit in Figure E.
Rev. 2.4 23.09.2014
3
IFAG IPC TD VLS
IKW40N120T2
TRENCHSTOP™ 2[nd] Generation Series
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## **Switching Characteristic, Inductive Load,** at _T_ j=175 C
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d(o n)|_T_j=175C<br>_V_C C=600V,_I_C=40A,<br>_V_G E=0/15V,<br>_R_G= 12_,_<br>_L_<br>_1 )_=180nH,<br>_C_<br>_1 )_=67pF<br>Energy losses include<br>“tail” and diode reverse<br>recovery.|-|32|-|ns|
|Rise time|_t_r||-|28|-||
|Turn-off delaytime|_t_d(o f f)||-|405|-||
|Fall time|_t_f||-|195|-||
|Turn-on energy|_E_o n||-|4.5|-|mJ|
|Turn-off energy|_E_o f f||-|3.8|-||
|Total switchingenergy|_E_t s||-|8.3|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_r r|_T_j=175C<br>_V_R=600V,_I_F=40A,<br>_di_F_/dt_=950A/s|-|480|-|ns|
|Diode reverse recoverycharge|_Q_r r||-|6.6|-|µC|
|Diodepeak reverse recoverycurrent|_I_r r m||-|31|-|A|
|Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_r r_/dt_||-|200||A/s|
> 1) Leakage inductance _L_ and Stray capacity _C_ due to dynamic test circuit in Figure E.
Rev. 2.4 23.09.2014
4
IFAG IPC TD VLS
IKW40N120T2
TRENCHSTOP™ 2[nd] Generation Series
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100A t p=3µs<br>160A<br>140A T C =80 ° C 10µs<br>120A<br>10A 50µs<br>100A<br>80A 150µs<br>60A I c T C=110°C 1A 500µs<br>40A 20ms<br>Ic DC<br>20A<br>0A 0.1A<br>10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V<br>f , SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE, COLLECTOR-EMITTER VOLTAGECOLLECTOR-EMITTER VOLTAGE-EMITTER VOLTAGEEMITTER VOLTAGE<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>, ,<br>I C I C<br>**----- End of picture text -----**<br>
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V CE, COLLECTOR-EMITTER VOLTAGE, COLLECTOR-EMITTER VOLTAGECOLLECTOR-EMITTER VOLTAGE-EMITTER VOLTAGEEMITTER VOLTAGE<br>**----- End of picture text -----**<br>
**Figure 1. Collector current as a function of switching frequency** ( _T_ j 175C, _D =_ 0.5, _V_ CE = 600V, _V_ GE = 0/+15V, _R_ G = 12)
**Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25C, _T_ j 175C; _V_ GE=15V)
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70A<br>400W<br>60A<br>50A<br>300W<br>40A<br>200W 30A<br>20A<br>100W<br>10A<br>0A<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C<br>T C, CASE TEMPERATURE T C, CASE TEMPERATURE<br>POWER DISSIPATION<br>, COLLECTOR CURRENT<br>tot ,<br>P I C<br>**----- End of picture text -----**<br>
**Figure 3. Maximum power dissipation as a function of case temperature** ( _T_ j 175C)
**Figure 4. Maximum collector current as a function of case temperature** ( _V_ GE 15V, _T_ j 175C)
Rev. 2.4 23.09.2014
IFAG IPC TD VLS
5
IKW40N120T2
TRENCHSTOP™ 2[nd] Generation Series
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150A 150A<br>20V 20V<br>125A V GE=17V 125A V GE =17V<br>15V 15V<br>100A 100A<br>13V 13V<br>11V 11V<br>75A 75A<br>9V 9V<br>7V 7V<br>50A 50A<br>25A<br>25A<br>0A<br>0A<br>0V 1V 2V 3V 4V 5V<br>0V 1V 2V 3V 4V 5V<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>, ,<br>I C I C<br>**----- End of picture text -----**<br>
_V_ CE, COLLECTOR-EMITTER VOLTAGE **Figure 5. Typical output characteristic** ( _T_ j = 25°C)
_V_ CE, COLLECTOR-EMITTER VOLTAGE
**Figure 6. Typical output characteristic**
( _T_ j = 175°C)
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140A<br>120A<br>100A<br>80A<br>60A<br>40A<br>20A T J=175°C<br>25°C<br>0A<br>0V 2V 4V 6V 8V 10V 12V<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>
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V GE, GATE-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>
**Figure 7. Typical transfer characteristic** (VCE=20V)
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3.5V<br>IC =80A<br>3.0V<br>2.5V<br>2.0V<br>I C =40A<br>1.5V<br>IC =20A<br>1.0V<br>IC =8A<br>0.5V<br>0.0V<br>-50°C 0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br> SATURATION VOLTAGE<br>ER<br>EMITT<br>-<br>COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br>
**Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V)
Rev. 2.4 23.09.2014
6
IFAG IPC TD VLS
TRENCHSTOP™ 2[nd] Generation Series
## Cinfine ~~on~~
## IKW40N120T2
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1000ns<br>t<br>=== d(off)<br>100ns pif t f | | | |<br>SS SS SS SS<br>t<br>d(on)<br>10ns t r<br>——————<br>SEEEEEES<br>1ns<br>20A 40A 60A<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br>
- **Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _R_ G=12Ω, Dynamic test circuit in Figure E)
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1000 ns<br>t<br>ff d(off)<br>PEt TT | | |<br>t f<br>100 ns<br>t<br>d(on)<br>on ee ee<br>10 ns Pe t r<br>SS<br>es<br> <br>R G, GATE RESISTOR<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>
- **Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _I_ C=40A, Dynamic test circuit in Figure E)
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to RR<br>SSE EBSEREEEE<br>| | | tt | $oN OS<br>100 ns fs || | LE LT]-T | sovssv P LLPAINNIEINEINGNX]NEATNxt<br>en ee ee ee wa a<br>aeS | asy LL dL hudE SININN IA<br>ee tp “ { [| [— | |NIAEN<br>ESSE NN<br>NNt, :<br>Pts PPT wy LEE<br>tons gov tL. | | | tT dtllt CN<br>o°c 50°C 100 °C 150°C 0°C 50°C 100 °C 150 °C<br>T J, JUNCTION TEMPERATURE T J, JUNCTION TEMPERATURE<br> VOLTAGE<br>THRESHOLD<br>ER<br>SWITCHING TIMES<br>t, EMITT-<br>GATEGE(th ) ,<br>V<br>**----- End of picture text -----**<br>
**Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=40A, _R_ G=12Ω, Dynamic test circuit in Figure E)
**Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 1.5mA)
Rev. 2.4 23.09.2014
IFAG IPC TD VLS
7
IKW40N120T2
TRENCHSTOP™ 2[nd] Generation Series
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*) E on and E tsinclude losses<br>20.0mJ due to diode recovery<br>E ts*<br>15.0mJ<br>10.0mJ E on *<br>5.0mJ E off<br>0.0mJ<br>20A 40A 60A<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>
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IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br>
**Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _R_ G=12Ω, Dynamic test circuit in Figure E)
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*) E on and E ts include losses<br> due to diode recovery<br>7.5mJ E ts *<br>5.0mJ<br>E off<br>E on*<br>2.5mJ<br>0.0mJ<br>0°C 50°C 100°C 150°C<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>
_T_ J, JUNCTION TEMPERATURE
**Figure 15. Typical switching energy losses as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=40A, _R_ G=12Ω, Dynamic test circuit in Figure E)
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*) E on and E ts include losses<br> due to diode recovery *<br>E ts<br>10.0 mJ<br>7.5 mJ<br>E on *<br>5.0 mJ E off<br>2.5 mJ<br>0.0 mJ<br> <br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
R G, GATE RESISTOR<br>**----- End of picture text -----**<br>
- **Figure 14. Typical switching energy losses as a function of gate resistor** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _I_ C=40A, Dynamic test circuit in Figure E)
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*) E on and E ts include losses<br> due to diode recovery<br>10.0mJ<br>7.5mJ E on*<br>E ts*<br>5.0mJ<br>E off<br>2.5mJ<br>0.0mJ<br>400V 500V 600V 700V<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>
_VCE_ , COLLECTOR-EMITTER VOLTAGE
## **Figure 16. Typical switching energy losses as a function of collector emitter voltage**
- (inductive load, _T_ J=175°C, VGE=0/15V, _I_ C=40A, _R_ G=12Ω, Dynamic test circuit in Figure E)
Rev. 2.4 23.09.2014
8
IFAG IPC TD VLS
IKW40N120T2
TRENCHSTOP™ 2[nd] Generation Series
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15V<br>240V<br>960V<br>10V<br>5V<br>0V<br>0nC 50nC 100nC 150nC<br>Q GE, GATE CHARGE<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br>
**Figure 17. Typical gate charge** ( _I_ C=40 A)
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**----- Start of picture text -----**<br>
C iss<br>1nF<br>C oss<br>100pF C rss<br>0V 10V 20V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>
**Figure 18. Typical capacitance as a function of collector-emitter voltage**
( _V_ GE=0V, _f_ = 1 MHz)
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15µs 300A<br>10µs 200A<br>5µs 100A<br>0µs 0A<br>12V 14V 16V 18V 12V 14V 16V 18V<br>V GE, GATE-EMITTER VOLTAGE V GE, GATE-EMITTER VOLTAGE<br>SHORT CIRCUIT WITHSTAND TIME<br>, SHORT CIRCUIT COLLECTOR CURRENT<br>t SC I C(sc),<br>**----- End of picture text -----**<br>
**Figure 19. Short circuit withstand time as a function of gate-emitter voltage** ( _V_ CE=600V _,_ start at _T_ J 175°C _)_
**Figure 20. Typical short circuit collector current as a function of gate-emitter voltage**
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**----- Start of picture text -----**<br>
( V CE 600V, T j,start = 175C)<br>**----- End of picture text -----**<br>
Rev. 2.4 23.09.2014
9
IFAG IPC TD VLS
TRENCHSTOP™ 2[nd] Generation Series
## Cinfineon
## IKW40N120T2
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**----- Start of picture text -----**<br>
V<br>CE<br>600V SNE 60A<br>Nh \<br>MATT | |<br>400V 40A<br>AKL TT<br>CEE Pee<br>200V TAL EET 20A<br>I<br>C<br>0V JN ETT 0A<br>0us 0.4us 0.8us 1.2us<br>EMITTER VOLTAGE<br>-<br>COLLECTOR<br>,<br>CE<br>V<br>**----- End of picture text -----**<br>
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60A Tuy yt 600V<br>I<br>C<br>40A 400V<br>Sees<br>IAL<br>20A Sees 200V<br>V<br>CE<br>0A LI IN 0V<br>0us 0.4us 0.8us 1.2us<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>
## _t_ , TIME
**Figure 21. Typical turn on behavior** (VGE=0/15V, _R_ G=12Ω, _T_ j = 175C, Dynamic test circuit in Figure E)
## _t_ , TIME
**Figure 22. Typical turn off behavior** (VGE=15/0V, _R_ G=12Ω, _T_ j = 175C, Dynamic test circuit in Figure E)
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HiT A A 2 8<br>Lae EHHAH<br>D =0.5<br>ST AT err TT Peees" THM —L-UTTM CC aCTT<br>10-1K/W<br>0.2<br>aru22 rna<br>0.1<br>=A “SS tert<br>Cue A R , ( K / W ) , ( s ) susie aeetatthe<br>0.05 0.064 3.67*10 [-4]<br>“hk == 0.074 3.92*10 [-3 ] Pesows (IM Pr Yat TTI R , ( K / W ) TTT , ( s ) TT<br>0.162 1.92*10 [-2] 0.112 2.80*10 [-4]<br>10-2K/W t— 0.010 3.40*10 [-1] 2 0.163 a 3.27*10 [-3 ] III<br>0.02 0.234 1.71*10 [-2]<br>re, 0.01 HE R 1 R 2 emee 0.015 2.68*10 [-1] Hi<br>AAT | ae fo<br>R 1 R 2<br>weniilATT single pulse | YIN --]| ETLY) ii thl<br>C 1= 1/ R 1 C 2= 2/ R 2<br>10-3K/W LIM AMM srr neo C 1=1/ R 1 C 2=2/ R 2 il<br>co ese ATI TTI<br>10µs 100µs 1ms 10ms 100ms 1us 10us 100us ims 10ms<br>t P, PULSE WIDTH t P, PULSE WIDTH<br>IMPEDANCE IMPEDANCE<br>TRANSIENT THERMAL TRANSIENT THERMAL<br>, ,<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>
**Figure 23. IGBT transient thermal impedance** ( _D = t_ p / _T_ )
**Figure 24. Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ P/ _T_ )
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TRENCHSTOP™ 2[nd] Generation Series
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600ns<br>500ns<br>T =175°C<br>J<br>400ns<br>300ns<br>200ns<br>T =25°C<br>J<br>100ns<br>0ns<br>400A/µs 800A/µs 1200A/µs 1600A/µs<br>di F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY TIME<br>,<br>t rr<br>**----- End of picture text -----**<br>
**Figure 23. Typical reverse recovery time as a function of diode current slope** ( _V_ R=600V, _I_ F=40A, Dynamic test circuit in Figure E)
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**----- Start of picture text -----**<br>
40A<br>T =175°C<br>35A J<br>30A<br>T =25°C<br>J<br>25A<br>20A<br>15A<br>10A<br>5A<br>0A<br>400A/µs 800A/µs 1200A/µs 1600A/µs<br>REVERSE RECOVERY CURRENT<br>I rr,<br>**----- End of picture text -----**<br>
_di_ F _/dt_ , DIODE CURRENT SLOPE
**Figure 25. Typical reverse recovery current as a function of diode current slope** ( _V_ R=600V, _I_ F=40A, Dynamic test circuit in Figure E)
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**----- Start of picture text -----**<br>
8µC<br>T =175°C<br>J<br>6µC<br>4µC<br>T =25°C<br>J<br>2µC<br>0µC<br>400A/µs 800A/µs 1200A/µs 1600A/µs<br>di F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY CHARGE<br>,<br>rr<br>Q<br>**----- End of picture text -----**<br>
**Figure 24. Typical reverse recovery charge as a function of diode current slope** ( _V_ R=600V, _I_ F=40A, Dynamic test circuit in Figure E)
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**----- Start of picture text -----**<br>
-1000A/µs<br>T =25°C<br>J<br>-800A/µs<br>T =175°C<br>J<br>-600A/µs<br>-400A/µs<br>-200A/µs<br>-0A/µs<br>400A/µs 800A/µs 1200A/µs 1600A/µs<br>DIODE PEAK RATE OF FALL<br>,<br>/dt<br>rr<br>di OF REVERSE RECOVERY CURRENT<br>**----- End of picture text -----**<br>
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di F /dt , DIODE CURRENT SLOPE<br>**----- End of picture text -----**<br>
**Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** ( _V_ R=600V, _I_ F=40A, Dynamic test circuit in Figure E)
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TRENCHSTOP™ 2[nd] Generation Series
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150A<br>125A TJ = 25°C<br>175°C<br>100A<br>75A<br>50A<br>25A<br>0A<br>0V 1V 2V 3V<br>FORWARD CURRENT<br>,<br>I F<br>**----- End of picture text -----**<br>
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V F, FORWARD VOLTAGE<br>**----- End of picture text -----**<br>
**Figure 27. Typical diode forward current as a function of forward voltage**
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2.5V<br>I F =80A<br>2.0V<br>40A<br>1.5V<br>20A<br>1.0V 8A<br>0.5V<br>0.0V<br>0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br>FORWARD VOLTAGE<br>,<br>F<br>V<br>**----- End of picture text -----**<br>
**Figure 28. Typical diode forward voltage as a function of junction temperature**
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IKW40N120T2 TRENCHSTOP™ 2[nd] Generation Series
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IKW40N120T2
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## TRENCHSTOP™ 2[nd] Generation Series
**Figure A. Definition of switching times**
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i,v<br>di F /dt t r r =t S + t F<br>Q r r =Q S + Q F<br>t<br>r r<br>I F t S t F<br>I Q S Q F 10% I r r m t<br>r r m 90% I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>1 2 n<br>r1 r 2 r n<br>T (t)j<br>p(t) r1 r 2 r n<br>T C<br>**----- End of picture text -----**<br>
**Figure D. Thermal equivalent circuit**
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**Figure B. Definition of switching losses**
**Figure E. Dynamic test circuit**
.
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**Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.**
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ) **.**
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.4 23.09.2014
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IFAG IPC TD VLS
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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