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IKW40N120H3FKSA1
IGBT, 40 A, 2.4 V, 483 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:483W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pi
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 483W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.4V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 2.9 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## IGBT
IKW40N120H3
IKW40N120H3
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Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>* low EMI<br>* Very soft, fast recovery anti-parallel diode<br>G<br>* maximum junction temperature 175°C<br>E<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/ &<br>Applications:<br>* uninterruptible power supplies , =<br>* welding converters ‘A<br>* converters with high switching frequency<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW40N120H3|1200V|40A|2.05V|175°C|K40H1203|PG-TO247-3|
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IKW40N120H3
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## High�speed�switching�series�third�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
Rev.�2.1,��2014-11-26
IKW40N120H3
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## High�speed�switching�series�third�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||40.0<br>20.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||483.0<br>220.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.31|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||1.11|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.1,��2014-11-26
4
IKW40N120H3
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## High�speed�switching�series�third�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|2.05<br>2.50<br>2.70|2.40<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.80<br>1.85|2.35<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|2.40<br>2.60<br>2.60|3.05<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.00mA,_V_CE=_V_GE|5.0|5.8|6.5|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|250.0<br>2500.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|600|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|20.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2330|-|pF|
|Output capacitance|_C_oes||-|185|-||
|Reverse transfer capacitance|_C_res||-|130|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=40.0A,<br>_V_GE=15V|-|185.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤600V,<br>_t_SC≤10µs<br>_T_vj=175°C|-|139|-|A|
Rev.�2.1,��2014-11-26
5
IKW40N120H3
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## High�speed�switching�series�third�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|57|-|ns|
|Turn-off delaytime|_t_d(off)||-|290|-|ns|
|Fall time|_t_f||-|16|-|ns|
|Turn-on energy|_E_on||-|3.20|-|mJ|
|Turn-off energy|_E_off||-|1.20|-|mJ|
|Total switchingenergy|_E_ts||-|4.40|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=500A/µs|-|355|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.90|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-150|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|29|-|ns|
|Rise time|_t_r||-|49|-|ns|
|Turn-off delaytime|_t_d(off)||-|366|-|ns|
|Fall time|_t_f||-|48|-|ns|
|Turn-on energy|_E_on||-|4.40|-|mJ|
|Turn-off energy|_E_off||-|2.60|-|mJ|
|Total switchingenergy|_E_ts||-|7.00|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=500A/µs|-|639|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|4.30|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-105|-|A/µs|
6
Rev.�2.1,��2014-11-26
IKW40N120H3
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160<br>100 ond et et<br>140<br>_ PSTN T H e e el SE eH<br>< 120 |TINANG NG TUM _= (aera tp=1µs WAT A NT<br>10µs<br>10<br>100 50µs<br>teSSCPIN LN €a Looa Cece LTee eae| ersteN<br>) PTT NTACETENINIE ET, Peett TSS<br>— 80 ]TTRNY N\ TENT\ TUTTI O= iFe 100µs I E rrene<br>200µs<br>5 CAMA rin<br>ONT COT 8 amIES<br>60 500µs<br>1 DC<br>TC=80°<br>40<br>ESSA] TC=110° \ Tr[ET EIESTRRErfSE<br>TC=80°<br>20 HST fe et cal eA esa Re<br>TC=110°<br>PSTHE ECor SNASS PTa aIE ET<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Figure 2.<br>frequency Collector current as a function of switching ( Forward D oN T C bias safe T j operating V GE area =15V)<br>( T j ≤ 175°C, D =0.5, V CE =600V, V GE=15/0V,<br>r G=12 Ω )<br>I C I C<br>**----- End of picture text -----**<br>
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500 80<br>KEK<br>400<br>Not PN<br>60<br>z Zz<br>e f NN<br>e \<br>300<br>2PE INE Feteme 40 EL IN |<br>a ee ee<br>200<br>u °<br>20<br>ee ef<br>100<br>4] LL EN<br>0 PN 0 LEE EN<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ 15V, T j ≤ 175°C)<br>P tot I C<br>**----- End of picture text -----**<br>
7
IKW40N120H3 High speed switching series third generation
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140 180<br>120 pay VGE=20V 160 VGE=20V<br>[/] es ee len eee 4 a<br>17V 17V<br>|_ [7] | fi 140<br>100 Peary 15V IT / _ < 15V<br>x |, PSR<br>13V 120 13V<br>Lu Lu<br>11V 11V<br>: 80 WZ : 100 Sot<br>Sine 2am funsec cen<br>9V 9V<br>EL9 60 7V SWWin SL9 80 7V INRWS<br>5V 5V<br>i WO TE LI<br>60<br>BL© 40 NIKODLS © FAQS{) ,<br>40<br>20<br>20<br>pY~—— Ey ARNNEE<br>D 4 BNEE D442la 5NG<br>0 0<br>0 1 2 3 4 5 6 0 2 4 6 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ j=25°C)
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Figure 6. Typical<br>( T j=175°C)<br>**----- End of picture text -----**<br>
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150 5.0<br>Tj=25°C IC=20A<br>Tj=175°C IC=40A<br>4.5 IC=80A<br>Et) 7 ep<br>4.0<br>: P o AE E a nes<br>100<br>/ D 3.5<br>wu Aé+e | | | be |<br>oc ow<br>PL<br>3.0<br>pe) Ae |) Lee<br>4 / iS 2.5<br>: UA da<br>50<br>2.0<br>TTT| ARTT 3ET tebeyEefp |<br>1.5<br>CBPECT) GEEEEFE<br>0 1.0<br>5 10 15 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 8. Typical a function ( _V_ GE=15V)
8
IKW40N120H3
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1000 SS 1000 a a a<br>pP|pj| ||| ||| || ft tttd(off)fd(on) potpP|| ||| ||| | ft ||I|II tttd(off)fd(on)ttd(off)fd(on)td(off)fd(on)d(off)fd(on)fd(on)d(on) aaaaaa ee a eeeeee eeeee eee<br>tr trr<br>pot | | | P| | | | I a eee ee<br>P| ee tt tt a<br>Pi | | eee eet Pt | tT tt tt<br>ETT Pe Eee TT<br>op) op)<br>Ww Ww<br>==<br>g 100 a g 100 a a a<br>= pe a a<br>rs) a a ee es aeeee<br>Ee psf of { | ft tt py pt ep tty ee aeeeeeeeeee eeeeeee<br>= po Psf | | | | eT | | ts a eee<br>V4<br>10 Z 10<br>5 15 25 35 45 55 65 75 0 10 20 30 40<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
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1000 a a a<br>||I|II aaaaaa ee a eeeeee<br>tttd(off)fd(on)ttd(off)fd(on)td(off)fd(on)d(off)fd(on)fd(on)d(on)<br>trr<br>I a eee<br>a<br>Pt | tT tt tt<br>Pe Eee TT<br>op)<br>Ww<br>g 100 a a a<br>a a<br>es aeeee<br>ee aeeeeeeeeee<br>ts a eee<br>10<br>0 10 20 30 40<br>r G , GATE RESISTOR [ Ω ]<br>t<br>**----- End of picture text -----**<br>
Figure 9.
Figure 10.
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resistor<br>(ind. load, T j =175°C, V CE =600V, V GE=15/0V,<br>I C =40A, test circuit in Fig. E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(ind. load, T j =175°C, V CE =600V, V GE=15/0V,<br>r G=12 , test circuit in Fig. E)<br>**----- End of picture text -----**<br>
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1000 aa 7<br>| | td(off) aa ee typ.<br>tf min.<br>td(on) max.<br>tr<br>SS ee ee ee ee 6 ||<br>Ea<br>a p o PS—S<br>5<br>=F 7) ys se<br>=g 100 a Ww= “TS. TSK nw _<br>5 po ~S<br>E a a * 4 4 IN<br>= a ee ee = —_ ~<br>ee n s Ci aa & :<br>3<br>10 2<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
_V_ CE =600V, _V_ GE =15/0V, _I_ C=40A,
( _I_ C=1mA)
_r_ G=12
9
IKW40N120H3
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20 12<br>Eoff Eoff<br>18 Eon Eon<br>Ets Ets<br>10<br>- 16 Poy EJ<br>n / n<br>Lu7)eo 14 L L, 2 Lu7)o 8<br>SLa 12 ra}‘ @a -<br>19) , O Pan<br>PLoe ee owye - c<br>Ww 10 ; Ww 6 -<br>Z ’ y Zz ea<br>ZzoO 8 ’ ZzoO ae U7<br>4<br>BS Le LL & pe<br>6<br>Es ee E 1 | [ |<br>4 ae co 3 ~<br>~ (TPT eg 2 | Pd<br>2<br>eect rT]<br>err ETL<br>0 0<br>5 15 25 35 45 55 65 75 0 10 20 30 40<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =175°C, V CE =600V, V GE=15/0V, (ind. load, T j =175°C, V CE =600V, V GE=15/0V,<br>r G=12 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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8 10<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>8<br>6<br>Ww Ww .<br>7) 7)<br>ep) ep)<br>eo) eo) a<br>pL—! er | | yy—! 6 : ia<br>19) O a yaa<br>om ow a aa<br>Ww 4 Ww a uc<br>Z Z a oa<br>Ww Ww ae<br>4<br>Z Z ace<br>7 7 nae<br>2<br>2<br>a<br>0 0<br>25 50 75 100 125 150 175 400 500 600 700 800<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =600V, V GE =15/0V, I C=40A, (ind. load, T j =175°C, V GE =15/0V, I C=40A,<br>r G=12 , test circuit in Fig. E) r G=12 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
10
IKW40N120H3
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16<br>240V<br>960V<br>14<br>12 1000<br>Cies<br>oO ‘ ‘ a Coes ,<br>< , iL— EAEe Cres |—<br>WwS 10 a WW —=e s | an<br>a ne<br>fi 8 za — ~~ ;<br>E SS ee ee<br>Q<br>Ww 6 oO 100 a<br>Ke - a<br><x Es<br>- a ee<br>4 es<br>2<br>0 10<br>0 40 80 120 160 200 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>300 50<br><x<br>Pa g<br>Lu 250 — 40<br>xi© J Ww\3a<br>a Zz<br>Op 200 VA a= 30<br>4<br>=<br>fe) =<br>O kK<br>E 5<br>=) 150 / O 20<br>Oa<br>a6)<br>O Kb<br>fe ©<br>(e) x<br>100 10<br>50 0<br>10 12 14 16 18 10 12 14 16 18 20<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19. Typical short circuit function of gate-emitter ( _V_ CE 600V, start at _T_ j=25°C)
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Figure 20. Short circuit withstand time<br>gate-emitter voltage<br>( V CE 600V, start at T j 150°C)<br>**----- End of picture text -----**<br>
11
IKW40N120H3 High speed switching series third generation
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1<br>SC<br>2 La D=0.5 = ERE Sat D=0.5<br>0.1<br>2 eeTED7 [Od,] SelaTE 0.2 wie 2g FaeCor rnSee eaill LYae 0.2 CT<br>ESTr orierr 0.1 Ec 0.1<br>0.05 0.05<br>a SE ATTetanME TT 2 0.1 aeaeam Ll il<br>Z= ALee 0.02 TIM) = FEHR 0.02<br>= eer ma 2 eee<br>= EY TMM | ALD Wy am | 0.01 MAI = Ferri VA ee 0.01 CC<br>re eg tl single pulse = ANNs single pulse<br>iF 00h)mia eAHen seal aiF SSEeeAttyallTEil in ithll<br>5 0.01 LAT yall al y =<br>etier<br>tit | HA<br>0.01<br>aS© sehOi anon| A Ri Ro--[i/] IPTTeT Ty TR LLL --2 i)|i]<br>reel<br>FE Be, © A | Mil<br>ALI UUM | te, octle, UP et |<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.06414 0.074055 0.162315 10.0E-3 ri[K/W]: 0.290775 0.43377 0.363015 0.02781<br>A τ i[s]: 3.7E-4 3.9E-3 R 0.01916724 E 0.3399433 wall mei am601 τ i[s]: 2.7E-4 esat 2.6E-3 0.01477471 0.1784607 a<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance Figure 22. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>
( _D_ = _t_ p/T)
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800<br>Tj=25°C, IF = 40A<br>Tj=175°C, IF = 40A<br>4<br>700 =] )))|. (epee<br>. PS g ft Tj=25°C, IF = 40A<br>Tj=175°C, IF = 40A<br>= . ee<br>600 3<br>kb a os. <L Py<br>Wi Th a<br>500 O<br>oO eye 2 ft<br>ia<br>: a 7<br>th 400 — BoD<br>- ing 1<br>EP P S ECE<br>300 SO<br>200 0<br>200 400 600 800 1000 200 400 600 800 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 23.
( _V_ R=600V)
Figure 24.
( _V_ R=600V)
12
IKW40N120H3
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22 0<br>Tj=25°C, IF = 40A Tj=25°C, IF = 40A<br>Tj=175°C, IF = 40A Tj=175°C, IF = 40A<br>20<br><x al _ -50 _<br>Zz 18 > a in<br>= le a 6 -100 . ~~.<br>16<br>14 -150<br>3 a LE Z| 2 Pe — oo<br>Lu ’ oO<br>or / 8<br>12<br>Pt4 eTpty Ta: |e Th<br>o) 7 g -200<br>or ae)<br>uw f so)<br>2 10<br>°<br>-250<br>Zann<br>8<br>6 -300<br>200 400 600 800 1000 200 400 600 800 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
( _V_ R=600V)
( _V_ R=600V)
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4.0<br>Tj=25°C IF=10A<br>120 Tj=175°C IF=20A<br>IF=40A<br>3.5<br>100<br>= uw 3.0<br>80<br>2.5<br>60 : fe<br>fe</, Q<<br>a<br>&<br>2.0<br>40<br>oe © ——————<br>1.5<br>20<br>0 1.0<br>0 1 2 3 4 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 27.
Figure 28.
13
IKW40N120H3
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High�speed�switching�series�third�generation
## PG-TO247-3
14
Rev.�2.1,��2014-11-26
IKW40N120H3
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High�speed�switching�series�third�generation
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v GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>**----- End of picture text -----**<br>
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v GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>v CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI/dt a b<br>a b<br>dI<br>**----- End of picture text -----**<br>
Figure C.
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. parasitic relief
15
Rev.�2.1,��2014-11-26
IKW40N120H3
IKW40N120H3
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2009-12-03|-|
|1.2|2010-02-10|-|
|2.1|2014-11-26|Final data sheet|
## **Information**
## **Warnings**
endangered.
16
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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