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IKW40N120CS6XKSA1
IGBT, 80 A, 1.85 V, 500 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT6
- Power Dissipation: 500W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.73 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKW40N120CS6
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High speed soft switching TRENCHSTOP TM _ IGBT 6 in Trench and Fieldstop<br>technology copacked with soft and fast recovery anti-parallel diode<br>Features: C<br>1200V TRENCHSTOP TM _ IGBT6 technology offering:<br>* High efficiency in hard switching and resonant topologies<br>¢ Easy paralleling capability due to positive temperature<br>coefficient in V CEsat G<br>« Low EMI<br>E<br>* Low Gate Charge Q g<br>¢ Very soft, fast recovery full current anti-parallel diode<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models: =<br>http://www.infineon.com/igbt/<br>Applications:<br>+ Industrial UPS ys<br>¢ Charger<br>¢ Energy storage<br>¢ Three-level Solar String Inverter<br>* Welding G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW40N120CS6|1200V|40A|1.85V|175°C|K40MCS6|PG-TO247-3|
Datasheet www.infineon.com
2018-05-07
IKW40N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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IKW40N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤0.5µs,_D_<0.001)|_V_GE||±20<br>25|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤500V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||500.0<br>250.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.30|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.78|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
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IKW40N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.85<br>2.15<br>2.25|2.15<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.25|2.55<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.90mA,_V_CE=_V_GE|5.1|5.7|6.3|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1600|850<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|600|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|32.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2700|-|pF|
|Output capacitance|_C_oes||-|185|-||
|Reverse transfer capacitance|_C_res||-|120|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=40.0A,<br>_V_GE=15V|-|285.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|39|-|ns|
|Turn-off delaytime|_t_d(off)||-|315|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|2.55|-|mJ|
|Turn-off energy|_E_off||-|1.55|-|mJ|
|Total switchingenergy|_E_ts||-|4.10|-|mJ|
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## Sixth�generation,�high�speed�soft�switching�series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=700A/µs,<br>_L_σ=70nH,<br>_C_σ=67pF|-|400|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.65|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-65|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|38|-|ns|
|Turn-off delaytime|_t_d(off)||-|390|-|ns|
|Fall time|_t_f||-|55|-|ns|
|Turn-on energy|_E_on||-|3.50|-|mJ|
|Turn-off energy|_E_off||-|2.95|-|mJ|
|Total switchingenergy|_E_ts||-|6.45|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=800A/µs,<br>_L_σ=70nH,<br>_C_σ=67pF|-|720|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|6.40|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|27.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-70|-|A/µs|
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160<br>not for linear use VGE=20V<br>17V<br>a Tt 140 eee a<br>100 15V<br>120 13V<br>11V<br>100 9V<br>10 7V<br>80<br>60<br>1<br>40<br>coi 20<br>0.1 0<br>i ir } = L F<br>1 10 100 1000 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Figure 2.<br>( D T vj V GE ( T vj=25°C)<br>on T eC vjmax) OPT paleo wath Typical output characteristic<br>160 160<br>VGE=20V Tvj = 25°C<br>Tvj = 175°C<br>17V<br>140 aN 140 een<br>15V<br>120 13V 120<br>SN ae<br>11V<br>100 9V 100<br>ESSSA A [EO] e<br>7V<br>80 80<br>60 60<br>40 40<br>20 20<br>fo of<br>ASO ee eee<br>0 0<br>0 1 2 3 4 5 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>I C I C<br>I C I C<br>**----- End of picture text -----**<br>
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3.5 1000 a ESSS<br>IC = 20A<br>“"- a ee<br>IC = 40A<br>IC = 80A wer a a eeSa ee ee ee ee<br>S were a a ee ee ee ee eee<br>= 3.0 ee gy td(off) Oe<br>tf<br>td(on)<br>tr<br>2.5 100<br>5S n ss ee ee en perc<br>[a _ im eee<br>bu a a _e -= aa aee seed ee eeee e ee<br>2.0<br>E eae OQ ee eee<br>Fon P] ft sap=TT<br>1.5 10<br>=<br>a a a<br>5 ° a<br>O a a ee ee ee ee ee<br>a a Deee<br>1.0<br>Ea EEREa ee ee ee ee<br>0.5 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 5. Typical collector-emitter saturation voltage as Figure 6. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,=600V,<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
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(inductive load, T vj =175°C, V CE=600V,=600V,<br>V GE =0/15V, R G=9 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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1000 aa<br>td(off) aee<br>a ee ee<br>tf<br>a ee ee ee<br>1000 td(on)<br>tr<br>H a a ee ee<br>ee ee se a ee ee ee ee ee<br>td(off)<br>re re tf<br>i eee td(on)<br>= ee = tr<br>- -<br>gg 100 a a a<br>a<br>e 100 |} | | } 2 (eeee ee ee<br>a poete | = =_<br>» 0 SSSi ete eee OP eT<br>Pd nie ce Por resist<br>10 10<br>0 5 10 15 20 25 30 35 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical switching times as a function of gate Figure 8. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, R G=9 , Dynamic test circuit in Figure<br>Figure E) E)<br>t t<br>**----- End of picture text -----**<br>
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7.0 16<br>typ. Eoff<br>min. Eon<br>6.5 max. 14 Ets<br>Lu /<br>K 6.0 . 12<br>O > wSA ip) ra<br>Q re HM /<br>> . 7<br>5.5 10<br>3 SAN nO 7<br>SN Ss Sg ;<br>a 5.0 ™ “SS te 8 ,<br>- ~ NS <a 2 ya 7<br>: DUN 8 4 4<br>EFS 4.5 N N 4 6 ¢ UZ<br>:i 4.0 ONIONN ~ aELA 4 4 Ue7 7<br><x S NI a ia aia<br>i “XN S co) 2 L—<br>7<br>° ee sce<br>3.5 ~ 2 ¢laa Z|<br>3.0 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 9. Gate-emitter threshold voltage as a function Figure 10. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=1.9mA) (inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, R G=9 Ω , Dynamic test circuit in<br>Figure E)<br>12 7<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>6<br>ao at<br>10<br>ip) ra op) 5 cat<br>Lu Lu Prom<br>io) “ io) -*<br>ip) oo io) -*<br>—! 8 —!<br>ing& “a & 4<br>3 ”” o<br>Lu ao Zz =_ _<br>3<br>6 caePa Lu =<br>:9 . a (e)9 = =— eT<br>2<br>= an: |<br>~ 4 J “7 epee~<br>a<br>1<br>a -<br>2 0<br>0 5 10 15 20 25 30 35 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, R G=9=9 , Dynamic test circuit in<br>Figure E) Figure E)<br>E<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>
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(inductive load, V CE =600V, V GE=0/15V,=0/15V,<br>I C =40A, R G=9=9 , Dynamic test circuit in<br>8 Figure E)<br>**----- End of picture text -----**<br>
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9 1200<br>Eoff Tvj = 25°C<br>Eon Tvj = 175°C<br>8 E] Ets L d<br>1000<br>= 7 “ — \<br>7<br>Lu “ Lu<br>io)7) a oe) 800<br>e)— 6 , 7)a XN<br>Zz 5 a a [ag 600 NY 5<br>Lu , 7 7 3 ~<br>g 4 “ a Lu ~<br>400<br>E7a<br>z= 3 a = 8 ST<br>© 7 |_ oT .<br>200<br>beet<br>2<br>|<br>1 0<br>400 450 500 550 600 650 700 750 800 0 5 10 15 20 25 30 35<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] R G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical diode current slope as a function<br>function of collector emitter voltage gate resistor<br>(inductive load, T vj =175°C, V GE=0/15V, (inductive load, V CE =600V, V GE=0/15V,<br>I C R G=9=9 I C<br>/dt<br>F<br>E di<br>**----- End of picture text -----**<br>
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I C =40A, R G=9=9<br>Figure E)<br>**----- End of picture text -----**<br>
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16 1E+4<br>V CC Cies<br>— = 240V H a ee ee<br>V CC Coes<br>14 —7 a= 960V / / iI Cres p ao<br>[CS<br>= 12 e s<br>o)<x // _LL 1000 Sa OS<br>F 10 & A<br>re) / Ww Oc<br>> 7 (S) NR<br>Y _—— 2 A<br>8<br>W TT = |p Nes}<br>WW<br>6<br>: 2.<br><x 100 a ee<br>.<br>4 ee<br>a<br>2<br>a a<br>0 10<br>0 50 100 150 200 250 300 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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Figure 15. Typical<br>( I C=40A)<br>**----- End of picture text -----**<br>
Figure 16.
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( V GE<br>**----- End of picture text -----**<br>
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300 6.0<br>5.5<br>275<br>Lu —<br>iad Ww<br>or = 5.0<br>a 250 Zz<br>Phe AEz 4.5 Nee<br>225 4.0<br>Ea)<br>37oc 3.5<br>200<br>m22fe)a 3.0 -™<br>175<br>2.5<br>150 2.0<br>12.0 12.5 13.0 13.5 14.0 14.5 15.0 12.0 12.5 13.0 13.5 14.0 14.5 15.0<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current as a Figure 18. Short circuit withstand time as a function of<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 500V, T vj 175°C) ( V CE 500V, start at T vj ≤ 175°C)<br>1<br>ETAT Ler EAESST SE et ECE<br>_= 0.1 Se=u LFTY(TI _= rrma ans<br>D = 0.5 D = 0.5<br>w Pa Oe COI rr ayy (|| 4 HM TTT<br>0.1<br>< A d [] Ct 0.2 Ee) 2 ee 0.2 a A|<br>o 00/77 AAT 0.1 < Seeatiiiesaste Zeit eee 0.1 eer imeeeat<br>0.05 0.05<br>WwW cel CU) 2) EE CHO<br>© A) a ty EE 7) A a<br>0.02 0.02<br>0.01<br>Zz STom AA crmee 0.01 TT TU Zz Tmmani W/ LL 0.01<br>0.01<br>i es | aa<br>single pulse single pulse<br>e =a Bee atlll e a<br>b PLAN | TTI TTTTTI) CM CENCE TT<br>im2 ae ATTATT ANIM ETICETTETUT<br>0.001<br>Jil 2 e o<br>0.001<br>5 or<br>FETT = | SSCSAHS" “ HeHo ee=eee O ee *_||<br>e am © E RE<br>A nn i: 1 2 tty 3 4 5 6 A i: 1 2 3 4 5 ot<br>ri[K/W]: 9.4E-4 0.056801 0.070049 0.170338 8.0E-3 1.6E-3 ri[K/W]: 0.17605 0.29816 0.29355 0.0141 2.2E-3<br>| τ i[s]: 2.5E-5 3.4E-4 3.1E-3 0.016587 0.224027 2.909819 | τ i[s]: 3.1E-4 2.8E-3 0.01518 0.20937 2.46001<br>| a a ee |<br>1E-4 1E-4<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. IGBT transient thermal resistance Figure 20. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>I C(SC) t SC<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
1000<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A Tvj = 175°C, IF = 40A<br>900<br>7<br>— =a<br>2 Wu<br>=> 800 \ S Oa 6<br>F sy =r<br>> ~ oO<br>700<br>—<br>O Oo 5<br>idwi 600 imia<br>i 4<br>> 500<br>-<br>NS ow<br>3<br>400 —S<br>300 2<br>_ {| |<br>200 400 600 800 1000 1200 200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery time as a function Figure 22. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R=600V) ( V R=600V)<br>30 LE 0 LE<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A 7 -10 Tvj = 175°C, IF = 40A<br>Sa ee ee<br>= -20<br><x ° | [ J | |<br>E 25 = 7 g<br>7x<br>a [/] -30<br>O<br>> 7 = -40<br>ow / -ie)<br>ro) 20 — Ny -50<br>a / 2 -60 \<br>WwW ®<br>fe / 8<br>-70<br>Wwmf 15 4 ao] .<br>-80<br>« / / Ww [>]<br>“N<br>-90<br>10 -100<br>200 400 600 800 1000 1200 200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 23. Typical<br>function<br>( V R=600V)<br>**----- End of picture text -----**<br>
Figure 24.
( _V_ R=600V)
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**----- Start of picture text -----**<br>
4.0 160<br>Tj=25°C, IF = 40A Tvj = 25°C<br>Tj=175°C, IF = 40A Tvj = 175°C<br>3.5 = —— 140 = | / /<br>> /<br>3.0 120<br>===<br>o - <x<br>S: 2.5 7 “7 Zz_WW 100<br>na oa<br>uwOZz 2.0 nan :=)oe) 80 Po fh<br>Lu Qo /<br>z=<br>5 1.5 [o] 60<br>= [.]<br>1.0 40<br>2<br>0.5 20<br>0.0 0<br>200 400 600 800 1000 1200 0 1 2 3 4 5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I F<br>E<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
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**----- Start of picture text -----**<br>
( V R=600V)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
3.5<br>IF = 20A<br>IF = 40A<br>IF = 80A<br>3.0<br>=.<br>Ww<br>4<br>ke 2.5<br>I<br>><br>Q<br>aa<br><x<br>Ss 2.0<br>x<br>LL<br>1.5<br>1.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
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## Sixth�generation,�high�speed�soft�switching�series
## **Package Drawing PG-TO247-3**
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## Sixth�generation,�high�speed�soft�switching�series
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## Sixth�generation,�high�speed�soft�switching�series
## **Revision�History**
IKW40N120CS6
## **Revision:�2018-05-07,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2018-05-07|Final data sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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