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IKW30N65WR5XKSA1
IGBT, 60 A, 1.4 V, 185 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 185W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.755 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IKW30N65WR5
IKW30N65WR5
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Features: C<br>¢ Powerful monolithic diode optimized for ZCS applications<br>* TRENCHSTOP_ 5 technology applications offers:<br>- high ruggedness, temperature stable behavior<br>- very low V CEsat and low E off<br>G<br>- easy parallel switching capability due to positive<br>E<br>temperature coefficient in V CEsat<br>« Low EMI<br>¢ Low electrical parameters depending (dependence) on<br>temperature<br>* Qualified according to JESD-022 for target applications =<br>¢ Pb-free lead plating; ROHS compliant fale<br>« Complete product spectrum and PSpice Models: ro heap<br>http://www.infineon.com/igbt/<br>Applications:<br>y<br>* Welding<br>* PFC<br>¢ ZCS - converters<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW30N65WR5|650V|30A|1.4V|175°C|K30EWR5|PG-TO247-3|
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## Reverse�Conducting�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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IKW30N65WR5
Reverse�Conducting�Series
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=117°C|_I_C||60.0<br>30.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||24.0<br>15.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=117°C|_P_tot||185.0<br>75.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.81|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||3.40|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.1,��2015-12-10
4
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## Reverse�Conducting�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.40<br>1.65|1.80<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.40<br>1.50|1.90<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|35.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3700|-|pF|
|Output capacitance|_C_oes||-|35|-||
|Reverse transfer capacitance|_C_res||-|16|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|155.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=26.0Ω,_R_G(off)=26.0Ω,<br>_L_σ=45nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|39|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|367|-|ns|
|Fall time|_t_f||-|9|-|ns|
|Turn-on energy|_E_on||-|0.99|-|mJ|
|Turn-off energy|_E_off||-|0.33|-|mJ|
|Total switchingenergy|_E_ts||-|1.32|-|mJ|
Rev.�2.1,��2015-12-10
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IKW30N65WR5
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## Reverse�Conducting�Series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=900A/µs|-|95|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.25|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|22.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-590|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=26.0Ω,_R_G(off)=26.0Ω,<br>_L_σ=45nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|35|-|ns|
|Rise time|_t_r||-|14|-|ns|
|Turn-off delaytime|_t_d(off)||-|423|-|ns|
|Fall time|_t_f||-|6|-|ns|
|Turn-on energy|_E_on||-|1.09|-|mJ|
|Turn-off energy|_E_off||-|0.46|-|mJ|
|Total switchingenergy|_E_ts||-|1.55|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=900A/µs|-|121|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.15|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|28.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1100|-|A/µs|
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Rev.�2.1,��2015-12-10
IKW30N65WR5
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100 200<br>re eo aTE TTTTTTee ee 180160 \ IN<br>not for linear use<br>te i<br>x iile 140 EXCEL<br>10<br>eT = pS<br>120<br>re)x nna eeeeee eeeee xa Ne<br>100<br>x aeh ee x<br>ehSL Lu 80 Po} of KY fF<br>1<br>oO AM 8 NT<br>60<br>0 eeFSR ete SSESEHee ee ae<br>ntreaseelee eea eeeee 4020 ewePf of fd<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
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70 90<br>VGE=20V<br>80 15V<br>60<br>13V<br>efNS ttt 70 eee Se aoe<br>11V<br>s 50 Nd, PSS<br>- fs XQ :- 60 | 9V onWl<br>(aa (aa 8V<br>40<br>50<br>7V<br>w \ Qaesee ape<br>40 6V<br>30<br>PN w See<br>O O 30 IN H f<br>PP oN PEN Pe<br>20<br>° ° WW<br>20<br>10<br>10<br>| LARTCLL<br>0 0<br>25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
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IKW30N65WR5
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90 VGE = 20V 7 90 T vj Ld /<br>80 17V SY 80 ee T vj<br>eI | Es<br>15V | |<br>70 70<br>yp.<br>13V<br>. 60 11V Hl E 60 L<br>9V<br>: SI ONE |<br>uw 50 ME uw 50<br>8V<br>) —— / Y ) |<br>SO 40 7V — tTHL 7/ SO 40<br>O O<br>6V<br>e/a eee<br>30 30<br>fe) 5V a / J fe)<br>s) WK s) /<br>: 20 y/~ : 20<br>10 10<br>ee) 26 ee eee<br>0 ee 0 —_—<br>| AN} |<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 2 3 4 5 6 7 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=175°C)
Figure 6. Typical ( _V_ CE=20V)
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2.00 1000<br>IC = 7A aaa<br>IC = 15A a ee<br>S 1.75 IC = 30A ee ee<br>Ss = aa ea eeeee<br>1.50 td(off)<br><< ooo tf<br>td(on)<br>: e 100 f= tr {|<br>Ee |<br>1.25<br>“” D t a ee<br>[a uw= a ae s<br>iienE 1.00 Q e eee ee<br>fo) 0.75 a ee<br>5 =E 10 aNeeeee ne ae<br>(e)oI 0.50 aa aes a<br>O| a eeee<br>0.25 a a<br>0.00 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=26 Ω , _R_ G(off)=26 Ω , test circuit in Figure E)
8
IKW30N65WR5
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td(off) td(off)<br>tf 1000 tf<br>1000 td(on) td(on)<br>tr tr<br>H= a(PE ee<br>a<br>a a ce —————————————<br>ee ee eeee<br>ee a OC<br>op) op)<br>100<br>————————— 100<br>> a a PO [Tras] are asa a-p-~---]<br>z a tee a erence es<br>= a a eeee eee”<br>© a = Oo reeprrresseefieseeesrepersseeree ossereeefeeeeesseg<br>Foe eee |Pa<br>) wo ~~ ee ep)<br>ae ae ee 10 ee<br>10<br>a ee ee ee<br>1 1<br>10 20 30 40 50 60 70 80 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>
Figure 9. Typical **resistance**
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(inductive load, T vj =175°C, V CE=400V,<br>V GE =0/15/V, I C =30A, dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 10.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =30A, _R_ G(on)=26 Ω , _R_ G(off)=26 Ω , test circuit in Figure E)
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6.0 3.5<br>typ. Eoff<br>E min. yl Eon /<br>= _ 5.5 max. | Ets |<br>3.0<br>a 5.0 . ap)= ne<br>2.5<br>Qa 4.5 ee a /<br>— ys /<br>2 4.0 = < 4<br>2.0<br>PeeaLr 3.5 ——~ ; Se:<< “> J owi //Ayy 7<br>1.5<br>3.0<br>i ~~ — = /<br>LuLW 2.5 = >. ~| FE= 1.0 / A y ra ZA<br><x 2.0 ~ n / Wa<br>0.5 s L<br>“tof<br>1.5<br>ot tT A<br>1.0 0.0<br>sf | | oa<br>25 50 75 100 125 150 0 10 20 30 40 50 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.3mA)
Figure 12.
(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=26 Ω , _R_ G(off)=26 Ω , dynamic test circuit in Figu
9
IKW30N65WR5
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3.0<br>Eoff<br>Eon<br>Ets<br>2.5<br>a<br>eeee<br>Ww pend Ww<br>7) 2.0 a 7)<br>n ae<br>eeue 4<br>aa> = ce ><br>ow 2 ow<br>uw 1.5 = — Wi<br>Z Lc _ Zz<br>oO = oO<br>p pe eee)<br>2 a_— 2<br>eres 1.0 [oot_ | |<br>1 =<br>= | | | tT ld<br>a 0.5<br>———<br>0.0<br>10 20 30 40 50 60 70 80<br>R G , GATE RESISTANCE [ Ω ]<br>E E<br>**----- End of picture text -----**<br>
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2.00<br>Eoff<br>Eon<br>1.75 Ets<br>1.50<br>Ww<br>7)<br>ee ee<br>1.25<br>4<br>><br>ow<br>Wi 1.00 a<br>Zz<br>oO<br>2 0.75<br>= 0.50<br>re<br>0.25 oeee<br>0.00<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>E<br>**----- End of picture text -----**<br>
Figure 13.
Figure 14.
(inductive load, _V_ CE =400V, _V_ GE=0/15V,=0/15V, _I_ C =30A, _R_ G(on)=26=26 Ω , _R_ G(off)=26=26 Ω , test circuit in Figure E)
**==> picture [471 x 319] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,=0/15V,<br>V GE =0/15V, I C =30A, dynamic test circuitin I C =30A, R G(on)=26=26 Ω , R G(off)=26=26 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>20 | 1E+4 SS<br>V CC<br>18 | _-— V CC == 520Vsoy} | | j; | Leaa aeee es ee e ee ee ee eee<br>16 | | a a ee e e<br>Cies<br>Coes<br>14 Cres<br>oe) e 4 A — e==e<br>< rot 1000 {_<br>a = a<br>ro) 12 Ww a a<br>>et LYEO Capeea eeSSSee<br>WW 10 e het tT TE [ET]<br>EL TA? eee<br>UW 8 < \<br>100<br>o) 6 | —————————<br>pV} MSR<br>4 poN<br>tT f7 | | | | del RE EEE<br>2 a fa<br>0 10<br>0 25 50 75 100 125 150 0 3 6 9 12 15 18 21 24 27 30<br>Q G , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=30A)
Figure 16.
( _V_ GE
10
IKW30N65WR5
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**----- Start of picture text -----**<br>
1<br>=F eet a<br>_S aa ee i NN| See Ja a a Heeriaillmail<br>D = 0.5 we D = 0.5<br>e e 1 BUT GRiiimoey 4 Hill<br>0.2 0.2<br>0.1 0.1<br>WI |LI = WI COPA<br>= re oa 0.05 Oo. 2 7 0.05 |<br>= ie l-+ 0.02 = |= Aaa 0.02 |<br>2 0.1 |ll cr 0.01 20 eoel 0.01<br>fz er 1 fz ee ee eee al<br>Ww _ pe. — Ww P| y/ | pyr<br>x tyoT single pulse single pulse<br>Se<br>i-Pa AWaa CT| Iay SC)THM 0.1 eeal JEWi Lyaeaal<br>n ft a) a |<br>” rT CUT CTI CT LA Ere =<br>Z Hf See een Pt ee<br>feEAAaSi a la4 Hoat--& ||| 2é rTeeee a Cot 4 Ht Ral]Il<br>THIN A[fetta othe,| A [ECT ca, ties Il<br>i: 1 2 3 4 5 i: 1 2 3 4 5<br>ri[K/W]: 1.2E-3 0.026208 0.325117 0.273429 0.185068 ri[K/W]: 1.8E-3 0.265343 0.526929 2.350517 0.280098<br>τ i[s]: 5.0E-7 1.7E-5 1.1E-4 7.0E-4 4.5E-3 τ i[s]: 6.0E-7 6.3E-5 4.5E-4 4.8E-3 0.02441<br>| pf) DoT<br>0.01 0.01<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 17.
( _D_ = _t_ p/T)
Figure 18.
( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
200 es a |<br>T vj I F<br>_-- T vj =175°C, I F =15A<br>175 Es) 7)<br>| |<br>iF \<br>=<br>150<br>im<br>35PKS 125 \<br>100<br>th ~<br>N —~L__|<br>75<br>50<br>500 750 1000 1250 1500 1750 2000<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 19. Typical of diode ( _V_ R=400V)
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3.0 Ss ee |<br>T vj I F<br>_-- T vj =175°C, I F =15A<br>2.5 Ese]<br>5 | | |<br>Lu _ —<br>2.0<br>ag<br>SJo. 1.5 oe<br>1.0<br>oe<br>§<br>0.5<br>0.0<br>500 750 1000 1250 1500 1750 2000<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 20.
( _V_ R=400V)
11
IKW30N65WR5
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**----- Start of picture text -----**<br>
50 | 0 |<br>T vj I F T vj I F<br>45 —- T vj =175°C, I F =15A -500 — —- T vj =175°C, I F =15A<br>40 Ty ——| = 1000 \<br><= ——ee BLN~~ TTT<br>i a7 O .<br>£ 35 7 -1500<br>=)©) 30 , a zLe -2000 \ a >><br>E 4 ue<br>Z +7<br>ui 25 [oye] -2500 | LN<br>(e) |<br>im y ea x<br>ow 20 / ma Nac -3000<br>Ww 7 wix<br>15 Ww -3500<br>BytT | |te EE |EN<br>ff Q \<br>ow 10 ra)O -4000 \<br>5 -4500<br>0 -5000<br>500 750 1000 1250 1500 1750 2000 500 750 1000 1250 1500 1750 2000<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
90 Ld I<br>— T vj = 25°C<br>—- T vj =175°C /<br>80<br>| /<br>70<br>Eb 60<br>ef)Z of<br>in /<br>D>S) 50 /<br>a /<br>a 40 |<br><x /<br>z /<br>30<br>20<br>10<br>0 E PA<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V F , FORWARD VOLTAGE [V]<br>I F<br>**----- End of picture text -----**<br>
Figure 23.
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**----- Start of picture text -----**<br>
2.50<br>— I F =7A<br>—- I F =15A<br>2.25 --- I F =30A<br>2.00<br>Ww ---7<br>o)<t 1.75 pee---<br>oO<br>> 1.50<br>fal —==<br>ce -——<br>=<br>fe 1.25<br>1.00<br>0.75<br>0.50 Pt tt<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 24.
12
IKW30N65WR5
Reverse�Conducting�Series
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## **Package Drawing PG-TO247-3**
13
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IKW30N65WR5
Reverse�Conducting�Series
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## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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IKW30N65WR5
## IKW30N65WR5
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2015-04-23|Preliminarydata sheet|
|1.2|2015-05-12|Minor change Figure 3|
|1.3|2015-06-01|Update Figure 14 E(T)|
|2.1|2015-12-10|Final data sheet|
## party.
## **Warnings**
15
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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