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IKW30N65NL5XKSA1
IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 227W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 85A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.05V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 1.78 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
TM CE(sat) IGBT in TRENCHSTOP _ 5 technology copacked with RAPID 2
## IKW30N65NL5
CE(sat)
IKW30N65NL5
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CE(sat)<br>TM<br>Low V CE(sat) IGBT in TRENCHSTOP _ 5 technology copacked with RAPID 2<br>fast and soft antiparallel diode<br>Features and Benefits: C<br>Low V CE(sat) L5 technology offering<br>* Very low collector-emitter saturation voltage V CEsat<br>¢ Best-in-Class tradeoff between conduction and switching losses<br>¢ 650V breakdown voltage<br>G<br>* Low gate charge Q G<br>E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>* Pb-free lead plating<br>* RoHS compliant eo<br>¢« Complete product spectrum and PSpice models: G yp<br>http://www.infineon.com/igbt/<br>Applications:<br>¢ Uninterruptible power supplies<br>G<br>¢ Solar photovoltaic inverters C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW30N65NL5|650V|30A|1.05V|175°C|K30ENL5|PG-TO247-3|
2
IKW30N65NL5
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## Low�VCE(sat)�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Rev.�2.1,��2014-12-10
IKW30N65NL5
Low�VCE(sat)�series�fifth�generation
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||85.0<br>62.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||50.0<br>34.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||227.0<br>114.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,2)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.66|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.95|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
1) Defined by design. Not subject to production test.
2) Package not recommended for surface mount applications.
Rev.�2.1,��2014-12-10
4
IKW30N65NL5
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## Low�VCE(sat)�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=100°C<br>_T_vj=150°C|-<br>-<br>-|1.05<br>1.05<br>1.04|1.35<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=100°C<br>_T_vj=150°C|-<br>-<br>-|1.65<br>1.70<br>1.68|2.20<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|4.2|5.0|5.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C<br>_T_vj=175°C|-<br>-|-<br>400.0<br>2000.0|40.0<br>-<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|65.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4600|-|pF|
|Output capacitance|_C_oes||-|64|-||
|Reverse transfer capacitance|_C_res||-|18|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|168.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=60nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|59|-|ns|
|Rise time|_t_r||-|20|-|ns|
|Turn-off delaytime|_t_d(off)||-|283|-|ns|
|Fall time|_t_f||-|67|-|ns|
|Turn-on energy|_E_on||-|0.56|-|mJ|
|Turn-off energy|_E_off||-|1.35|-|mJ|
|Total switchingenergy|_E_ts||-|1.91|-|mJ|
Rev.�2.1,��2014-12-10
5
IKW30N65NL5
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## Low�VCE(sat)�series�fifth�generation
## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1500A/µs|-|59|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.48|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2800|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=60nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|54|-|ns|
|Rise time|_t_r||-|22|-|ns|
|Turn-off delaytime|_t_d(off)||-|345|-|ns|
|Fall time|_t_f||-|169|-|ns|
|Turn-on energy|_E_on||-|0.69|-|mJ|
|Turn-off energy|_E_off||-|2.18|-|mJ|
|Total switchingenergy|_E_ts||-|2.87|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1500A/µs|-|58|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.65|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|24.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-4970|-|A/µs|
6
Rev.�2.1,��2014-12-10
IKW30N65NL5
CE(sat)
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250<br>100 0a 225<br>aee<br>|SLEa aPecoUMATATeee TTT 200175 PK\ ff ff<br>a 10 PUT TUM TM BE 150 EN<br>6 ee ee ee Ee<br>a op)<br>Ox Seea a 22 125 | 7ATod]<br>SCI<br>SO ei ny 9 100 Po} Ff XK] fF<br>s 1 fTTUM UE TETME TUTim ae¢ 75 | | | EN\<br>. PAISSS SSS ey ewe<br>a 50 \<br>o_o on aw<br>25<br>PEI PT \<br>not for linear use<br>e i<br>0.1 i ) «SCC 0 EN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs, temperature<br>I Cmax defined by design - not subject to ( T vj ≤ 175°C)<br>production test)<br>90 90<br>APN ya,<br>80 80<br>70 a N 70 VGE = 20V 7 aa<br>18V<br>ec] oi\N<br>60 60<br>Ww | fs 15V yi<br>iad Wwiad }<br>50 50 12V<br>oc a 10V |<br>:Pei{[ oo UNE\ | 8 i qiia<br>40 40<br>sOo | | | | \ :Oo 8V 4<br>Ww Ww<br>Bf AE 7V A<br>30 30<br>fe) \ fe)<br>6V<br>NE Gi<br>20 20<br>ee ee Oe<br>10 10<br>PO REE<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
7
IKW30N65NL5
CE(sat)
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90 90<br>T vj<br>80 a y 80 --- T vj Ld = 150°C e<br>|e ee e e<br>70 VGE = 20V 70<br>= 77, ee<br>18V<br>60 O TA 60 eee<br>WW 15V WW<br>5 50 12V ZI 5 50<br>) AT )<br>10V<br>ocO 40 ZO4) _ |] ocCO 40<br>8V<br>Ww| Ww|<br>7V<br>30 30<br>6V<br>20 20<br>5V<br>10 10<br>PA R Le<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>1.2 a SE<br>— I C =7.5A | td(off) a se ee ee<br>--- I C =15A I tf a ee ee ee ee<br>= 1.1 none I C 230A ! ttd(on)r a<br>1000<br>Ee5 1.0 nD aa aa aeeeeee ee ee eeee<br>o < a a a ee ee ee eee<br>in 0.9 a ee<br>2 100 iN |bepopete)<br>EeBL io)= Ee\ _ pf |<br>0.8<br>a | E a ee ee ee<br>rE S | | i ivw |] | | |<br>0.7<br>(oe)a: ee ee 10 jpaoe ae|__|SS __}__j__}___{____}____}____]eeSS ES ES ES<br>- a<br>po<br>0.6 pF a ee ee<br>0.5 | 1 Pt TT | ET |<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=23 Ω , _R_ G(off)=10 Ω , test circuit in Figure E)
8
IKW30N65NL5
CE(sat)
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td(off)d(off)<br>1000 m tff o<br>td(on)d(on)<br>1 ||HI|HIHI trr a a es<br>ee ee TS eee<br>100<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
td(off) td(off)d(off)<br>tf 1000 tff<br>td(on) td(on)d(on)<br>1000 tr _| trr a es<br>——— — — — 7 _| 1 ||HI|HIHI a<br>a a a ee ee TS eee<br>100<br>) 100 PP REEre |! a=<br>OQ oe Q eed eee a el ee ee<br>= es aes = ee<br>aaa<br>~ioerpot<br>s<br>ci [| | [| | §<br>10<br>10<br>——————————a SS apTa a<br>ee a<br>a<br>1 1<br>0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =30A, dynamic test circuit in I C =30A, R G(on)=23 Ω , R G(off)=10 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>7 8<br>typ. Eoff<br>min. Eon<br>max. 7 Ets<br>- El ))))) ELLA<br>6<br>p (T<br>6<br>oO> ep)Ww -:Le<br>5<br>5<br>2a ef<br>ox 4 oO or 4 oo |<br>- oe “NY me Zz ea<br>E he Zz 3 a<br>3 S oO “ ¢<br>Ww S = 2 \7 y, oa<br>2<br>1<br>1 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter threshold ( of _I_ C=0.4mA) junction temperature
Figure 12. Typical switching energy losses as (inductinductive “load, collector _T_ vj = Sanrent, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=23 Ω , _R_ G(off)=10 Ω , dynamic test circuit in Figu
9
IKW30N65NL5
CE(sat)
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**----- Start of picture text -----**<br>
4.0 3.5<br>Eoff Eoff<br>Eon Eon<br>3.5 Ets Ets<br>" 3.0<br>><br>£&<br>£&7p)Ww 3.0 >7p)Ww 2.5<br>7) 7)<br>2.5<br>—! —!<br>poe Uy 2.0 pe<br>5 2.0 pti ttt : |<br>g Lorry :Z =aa<br>1.5<br>2 1.5 2<br>OO<br>EE 1.0<br>1.0<br>0.5<br>0.5<br>0.0 0.0<br>0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, I C =30A, dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =30A, _R_ G(on)=23 Ω , _R_ G(off)=10 Ω , test circuit in Figure E)
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3.5 16 |<br>Eoff — V CC = 130V<br>Eon --- V CC = 520V<br>Ets 14<br>3.0<br>12<br>ef) f oe de L a<br>2.5<br>10<br>: aea - :<br>2.0<br>. - a 3 J<br>© or y<br>8<br>1.5<br>O uw<br>6<br>x E<br>:<br>. | /<br>1.0<br>4<br>0.5<br>2<br>0.0 0<br>200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 160 180<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=30A)
(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =30A, _R_ G(on)=23 Ω ; _R_ G(off)=10 Ω , test circuit in Figure E)
10
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IKW30N65NL5<br>e0 n<br>Low V CE(sat) ifth generatioion<br>1<br>Cies<br>1E+4 Coes 1 | Pe Se sa<br>Cres —— Sellf e nt cen oe<br>eti geee cia ate<br>VV<br>—| | nllaacSF D = 0.5 nT<br>< co 0.2<br>|. 0.1 A ae 0.1 |<br>0.05 ae<br>rs} 1000 —————-—————+4 = aged a 0.02 ob<br>————— Sail oy eaesnis! Ht<br>Zz ht Se Sie 0.01<br><xa ——— ail VGA, 4 i iaai rT single pulse |<br>———|<br>E =SSSS=BON ; oy<br>ri 100 =====——— —— | | uuga$ 0.01 Sti m anianAmnRe dua MlAl nilrmi Cc — i _<br>. aa=a? po—| || -g C/ail||E |\= i: 1 ICH 2 lllig 3 iinNe 4 el 5 =t/Ro 6 ut==<br>ri[K/W]: 0.0107 0.15506 0.17294 0.29017 0.02714 2.2E-3<br>τ i[s]: 2.0E-5 2.2E-4 2.0E-3 0.01147 0.09256 1.82712<br>10 P|Tot_ ™ 0.001 oHooo—<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE COLLECTOR-EM ITTER VOLTAGE [V] t p SE W<br>Figure 17. or evnitteritancevoltageasa functionion of Figure 18. ( IGB D = t T p/T) tans lent therma nce<br>( collstormiter V GE =0V,<br>1 150<br>ee on — T vj I F<br>ne an 140 T vj =15 I F 30a |||<br>=n inl<br>yy<br>Siei)ste aiee e aleedia Baill 130 25°C, =: 30A _<br>Ht YG<br>D = 0.5 Ill]<br>J] ni £ 120<br>:reall2<a 0.1 foncaer gee1) =ee i 0.20.10.05 IHee 110 4h\<br>: 0.02 Cc et 100<br>aiiia’ai sien in 0.01 - 90 | || |<br>F wrBeyalllssatenceSa single pulse | | Wwoe 80 |<br>\ —_<br>7a PlyGi } igs au a Ff<br>:oy 0.01 ai in Ha 70 LP\ ff<br>I<br>D52 Pr en psu} &<br>Siti eseaiiils - 60 TV<br>SAEentwae imii H iieHi 50 P| Nee a<br>g-2 yyZTalP NN Aiane aia i Tiin iiMtiiii oi maaii<br>i: 1 2 3 4 5 6 40 —_ TJTS<br>ri[K/W]: 0.031494 0.220947 0.291265 0.366808 0.03663 2.3E-3<br>τ i[s]: 2.5E-5 2.1E-4 1.7E-3 0.010113 0.08082 1.811337<br>0.001 Com La ee cooros | 30 pe| —| |<br>_<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 500 1000 1500 2000 2500 3000<br>t p , PULS E WIDTH dI F /dt DIODE CUR<br>Figure 19. transienttr: al impedan ceasa Figure 20. a e ry timmoreime eeeas tas)cnet<br>functioniode &f Ppuls e width oF diode curical“reverse current recov slop<br>( D = t p/T) ( V R=400V)<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
11
IKW30N65NL5
CE(sat)
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**----- Start of picture text -----**<br>
0.80 40<br>T vj I F T vj I F<br>0.75 [=ial T vj = | 150°C,25°, I F =308]=30A | a 756,oo T vj =150°C, | I F ==30A508<br>35<br>0.70<br>Wwef} a1f o ) je 30 fo f<br>aw 0.65 x uecot<br><x w Pea<br>g - : : : 25 Pf | jeep<br>0.60<br>Lu uc<br>ef ee<br>0.55 20<br>6 3 uae a<br>ia 0.50 ~ m<br>eee eee<br>15<br>ul ee w =<br>0.45<br>10<br>: a:<br>0.40<br>2 | | | Ts<br>5<br>0.35<br>0.30 0<br>500 1000 1500 2000 2500 3000 500 1000 1500 2000 2500 3000<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 as 90 a 7<br>— T vj =25°C, I F =30A — T vj =25°C<br>el T vj =150°C, I F =30A ie T vj = 175°C<br>cy=a 1000 | 80<br>70<br>-2000<br>| 60<br>-3000 N<br>Ms WwW 50 /<br>. a oe It<br>40<br>aex -4000 ‘ ——— Qae<br>\ SN $<br>a ‘ O 30<br>uw \ re<br>-5000<br>: 2 /<br>Bp: 20 P| ty [tl]<br>-6000<br>10<br>P| [iA]<br>-7000 0<br>500 1000 1500 2000 2500 3000 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>dI F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
12
IKW30N65NL5
CE(sat)
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2.0<br>I F<br>1.9 [ I F =ral<br>--- |<br>I F<br>1.8 a = 15A<br>1.7<br>aeWw 1.6 ee<br>Se<br><x<br>KkI 1.5<br>re<br>><br>Q 1.4<br>x<br>=ae 1.3 oe eeeee<br>re<br>ine 1.21.1<br>1.0<br>Pot | ee| dP<br>0.9<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
13
IKW30N65NL5
Low�VCE(sat)�series�fifth�generation
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## PG-TO247-3
14
Rev.�2.1,��2014-12-10
IKW30N65NL5
Low�VCE(sat)�series�fifth�generation
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V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>
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V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
Figure D.
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CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
15
Rev.�2.1,��2014-12-10
IKW30N65NL5
Low VCE(sat) series fifth generation
**==> picture [146 x 65] intentionally omitted <==**
## Revision History
## IKW30N65NL5
Revision: 2014-12-10, Rev. 2.1
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2014-12-10|Final data sheet|
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## Information
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## Warnings
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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1, 2014-12-10
16
Updated at February 9, 2023
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