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IKW30N65H5XKSA1
IGBT, 55 A, 1.65 V, 188 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:55A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 188W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 55A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.49 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
## IGBT
High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1
## IKW30N65H5
## IKW30N65H5
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High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1<br>fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant =<br>*« Complete product spectrum and PSpice Models: fale<br>http://www.infineon.com/igbt/<br>Applications:<br>* Solar converters ys<br>¢ Uninterruptible power supplies<br>* Welding converters<br>* Mid to high range switching frequency converters<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW30N65H5|650V|30A|1.65V|175°C|K30EH5|PG-TO247-3|
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IKW30N65H5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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IKW30N65H5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||55.0<br>35.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||30.0<br>18.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||54.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||188.0<br>94.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.00|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.1,��2015-05-06
4
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=14.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.55<br>1.50|1.90<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C<br>_T_vj=175°C|-<br>-|-<br>250.0<br>1000.0|40.0<br>-<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|39.5|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|45|-||
|Reverse transfer capacitance|_C_res||-|7|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|70.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|190|-|ns|
|Fall time|_t_f||-|19|-|ns|
|Turn-on energy|_E_on||-|0.28|-|mJ|
|Turn-off energy|_E_off||-|0.10|-|mJ|
|Total switchingenergy|_E_ts||-|0.38|-|mJ|
Rev.�2.1,��2015-05-06
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|195|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.09|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.13|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1180A/µs|-|70|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.41|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-200|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1180A/µs|-|44|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.22|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-370|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|225|-|ns|
|Fall time|_t_f||-|21|-|ns|
|Turn-on energy|_E_on||-|0.41|-|mJ|
|Turn-off energy|_E_off||-|0.16|-|mJ|
|Total switchingenergy|_E_ts||-|0.57|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|250|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.15|-|mJ|
|Turn-off energy|_E_off||-|0.07|-|mJ|
|Total switchingenergy|_E_ts||-|0.22|-|mJ|
6
Rev.�2.1,��2015-05-06
IKW30N65H5
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## High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1100A/µs|-|113|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.93|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|15.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-145|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1030A/µs|-|70|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.52|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-255|-|A/µs|
Rev.�2.1,��2015-05-06
7
~~High speed switching series fifth generation~~ IKW30N65H5
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100 200<br>aPALa ETTeeeeeeTTTee ee 180 \Nee<br>160<br>a ee || 140 KTP<br>ee 10<br>5 2 2 ee Zz \<br>120<br>o | not for linear use |<br>ro) 7)<br>100<br>or PT TTT ST ETTTEI .<br>im eh Ww 80 FP } Ff KO] fF<br>=<br>1<br>S N<br>oO Pt tt Ft - 60 i<br>eeePTaTTT eesti eatIUieee ea 4020 awePf ff dL UK<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
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60 90<br>LE<br>80<br>50 eS Ay<br>70 VGE=18V A ae<br>15V<br>=| ELL OD<br>40 60<br>biW \ biW 12V LEa UY] JO<br>50 10V<br>PP ON JEL eg<br>30 8V<br>5 Soo \ 5 40 PLR| If /<br>O O 7V /<br>Mt EL 6V MW<br>20 30<br>5V<br>20 Wr<br>4V<br>\ | LLNS SECT<br>10<br>OR<br>10<br>DANS<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
8
High speed switching series fifth generation IKW30N65H5
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**----- Start of picture text -----**<br>
90 90<br>Tj=25°C<br>80 LAA 80 Tj=150°C<br>70 VGE=18V 70<br>< 15V < e i<br>60 | [ce] | |) Ee 60<br>ede 12V eee o e<br>ef 50 10V bc |e | 50<br>e of<br>s 8V TW e<br>S 40 | oop lls | 40<br>7V<br>eee 6V 7 S |<br>30 30<br>A ee eee ee<br>5V<br>STL 20 RAits A 20 /<br>4V<br>10 10<br>NEE eee yee<br>PAN Ls<br>0 0<br>0 1 2 3 4 5 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br>
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2.50<br>IC — =7.5A fF ot ct ht CT<br>IC=15A<br>iE 2.25 IC=30A | EEE TT<br>zgd B ttd(off)f EL<br>Se 2.00 e 100 td(on) eee|<br>tr<br>: ea)<br>= eg IE Ss<br>Ss 1.75 aU4eo sn aes ee eePecee ee<br>BEET Roce<br>1.50 ~ ~<br>E= — a 9> | SSeee<br>Phe 1.25 10 -<br>c a ye Eeees<br>42 ET * aBeeee ee ee ee<br>e) 1.00 a ee ee ee ee eee<br>CCE) 6EEREREFEE<br>0.75<br>0.50 1<br>0 CePPPEA) 25 50 75 100 125 150 175 § Geepeeree 0 10 20 30 40 50 60 70 80 90<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ n GE =15/0V. _r_ G=23 Ω , Dynamic test circuit in Figure E)
9
~~High speed switching series fifth generation~~ IKW30N65H5
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**----- Start of picture text -----**<br>
1000<br>td(off)<br>| tf po eT<br>I td(on) a ee ee eee<br>| tr i<br>100 td(off)<br>tf<br>ee = e =eee eee I 1| ttd(on)r J}aa<br>o 100 o (a a ee ee ee eee<br>eea es Os<br>= a ee =<br>F a ee<br>O po eg<br>tL ene<br>i> a7 - ae . | FEi> 10 aa assa<br>Bole 10 a es | BE<br>. [_ - a<br>ae a ee ee ee ee ee<br>a ee ee ee eee pj | | | | |<br>1 1<br>5 15 25 35 45 55 65 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>
Figure 9. Typical **resistor**
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =15A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 10.
_I_ C =15A, _r_ G=23 Figure E)
_V_ CE =400V, _V_ GE=15/0V,
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**----- Start of picture text -----**<br>
6.0 5.0 /<br>typ. Eoff<br>E min. J} Eon /<br>5.5 4.5<br>= max. | Ey Ets e<br>Lu 7<br>Se 5.0 ee 4.0 ee<br>gs> 4.5 [ ~S et n 3.5<br>Oa — | | Wwtae P a5<br>= eesn ap) ee/<br>= 4.0 ~L O 3.0 J<br>s ee<br>acLTo 3.5 -_|~~ J SSsf ~sS = or2Ww 2.5 4/ 7/ 7<br>iad _ 7 7<br>Ww 3.0 > PS oO 2.0 ’ yi<br>e Pow) SK Te Le<br>E < Z aw,<br>e ~ = 4 7<br>pf 2.5 RON 1.5<br>Ww ~ = / yg<br>$ 2.0 ~ n 1.0 / WA 4<br>a<br>1.5 0.5<br>i ee [ee]<br>eee |“ =>a<br>1.0 0.0<br>eeeeee<br>0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.3mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=23 Ω ,Dynamic test Figure E)
10
IKW30N65H5
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**----- Start of picture text -----**<br>
1.0<br>Eoff<br>0.9 Eon<br>Ets<br>ee 0.8 e ee ee<br>Ww 0.7 : Ww<br>op) pra Tp)<br>op) “7 op)<br>; - ;<br>—! 0.6 oerz 8<br>ge> | = —!<br>©) aa —_ ><br>x 0.5 a pa —an ©)xx<br>Ww aT uw<br>peO 0.4 = oO<br>= Z<br>0.3<br>BS oiew | | dg<br>ee ee<br>0.20.1 —T<br>0.0<br>5 15 25 35 45 55 65<br>r G , GATE RESISTOR [ Ω ]<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
0.8<br>Eoff<br>Eon<br>0.7 Ets<br>0.6<br>Ww _<br>Tp) 7<br>op) --<br>; 0.5 | ft fb<br>8 2<br>—! pea<br>> Leo<br>©)xx 0.4 LaceLes _—<br>uw _-<br>oO - ~<br>0.3<br>dg<br>0.2<br>0.1<br>eo<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>E<br>**----- End of picture text -----**<br>
Figure 13.
Figure 14.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=23 ,Dynamic test circuit in Figure E)
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(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =15A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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0.7 16<br>Eoff 130V<br>Eon 520V<br>Ets 14<br>0.6 “Ze Yr<br>= “ /<br>~~ 7<br>€ “ S 12 VA<br>n 0.5 a uw //<br>op) Yo =<br>g“a 10<br>0.4<br>5a“ a S<br>4 “ 4 i /<br>8<br>Z 0.3 6 LZ<br>7 L- ai a<br>Ee 0.2 Oo<br>4<br>0.1<br>2<br>0.0 0<br>200 250 300 350 400 450 500 0 10 20 30 40 50 60 70 80<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=30A)
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T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br>
_I_ C =15A, _r_ G=23 Figure E)
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IKW30N65H5
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**----- Start of picture text -----**<br>
1E+4 1<br>Cies<br>Coes<br>I a es PT TTTer<br>1 Cres TT<br>V ee a N ds AA RS aEZA<br>D=0.5<br>1000 T F M]SCSdSSSS I Tlf|<br>ee— L TT 0.1 0.20.1<br>i ee ee<br>5. ee es Be a<br>0.05<br>we Eo 2 Ee<br>O a a Ce a 0.02<br>EF2 100 FNEEFf BRw AARNet L | 0.01 af<br>ES YW Jan i<br>single pulse<br>aee a a ee Oe OD)71a)|<br>a ee > oI =<br>§ Rehd =a Viaat Loan<br>. A ee ee ee ee uw 0.01 ee eel<br>10 Po“ ||| 2 e e oe<br>aSS sseeeess HM PA}|<br>NN a ee i<br>a ee cn VU TTT TTI | Lesceves Cec rere I<br>a PATINA | (UML CTI CCIM TAT | TT<br>i: 1 2 3 4<br>ri[K/W]: 0.1299033 0.1766063 0.2480626 0.2454278<br>τ i[s]: 1.0E-4 1.1E-3 9.7E-3 0.09645982<br>1 eeFf | fleeTT ee 0.001 ||| | TT<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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( V GE<br>**----- End of picture text -----**<br>
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=L 1 S SE iat!S See ese TT rn<br>Ww a D=0.5 Ur<br>O oC ee<br>9 a<br>=z UT TTgece 0.2 TIE<br>0.1<br>| HII 0.05 ey<br>® (Ul MAM<br>ES 0.1 | -T 0.020.01 PO<br>w Het A<br>ta PTT er er single pulse CT TT<br>x Ce eer<br>=2 STTMCTI | ETITt ee |<br>y<br>LAMM<br>2 0.01 I AL | Il R R jun)<br>|) ah | || {Ih<br>=: SSSa0ami ami Eee tit Hy<br>|<br>ta<br>i: 1 2 3 4<br>ri[K/W]: 0.5085472 0.4834926 0.6496018 0.3583585<br>ll —_ τ i[s]: 9.7E-5 a 9.3E-4 a 5.9E-3 — 0.05885063<br>0.001 hl |<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
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140<br>Tj=25°C, IF = 15A<br>130 ll Tj=150°C, I ee F = 15A ee<br>\ \<br>_D 120 <| \<br>~<br>110100 ER~<br>:<br>><br>(e) 90<br>O<br>4 80<br>TTI)<br>fv \<br>70 \<br>rf<br>><br>a 60 _~<br>a<br>5040 Pot ot tp<br>500 1000 1500 2000 2500 3000 3500<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 20. Typical of diode ( _V_ R=400V)
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IKW30N65H5
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1.1<br>Tj=25°C, IF = 15A<br>Tj=150°C, IF = 15A<br>1.0<br>oS 0.9 =< =<br><= 0.8 ae=)=)<br>ia 0.7 ee<br>: 3<br>O O<br>: 0.6<br>Bf<br>Lu: myBLBLi<br>0.5<br>x i<br>a a<br>or 0.4 eeee ee or<br>0.3<br>0.2<br>500 1000 1500 2000 2500 3000 3500<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rrm<br>**----- End of picture text -----**<br>
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30.0<br>Tj=25°C, IF = 15A<br>27.5 Tj=150°C, IF = 15A<br>25.0<br>=<br>ae=)=) 22.5 ;<br>ee 20.0 y<br>3 a“<br>O Bf 17.5 ope><br>15.0<br>myBLBLi 12.5 / / ma<br>a Ot’ OL<br>or y,<br>10.0<br>7.5<br>5.0<br>500 1000 1500 2000 2500 3000 3500<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rrm<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22.
( _V_ R=400V)
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0 40<br>Tj=25°C, IF = 15A Tj=25°C<br>Tj=150°C, IF = 15A 36 Tj=150°C / /<br>-50<br>32<br>2 -100 /<br>aoB ec 28 fillltt ty<br>-150<br>& {Xs ~ pttor 24 Le<br>L£O -200 \ ~~ 3 20<br>i<br>g ‘ , oe 16<br>-250 aN =<br>oO y<br>xe} NY 7a 12 eee<br>° ™<br>-300<br>~~<br>8<br>-350<br>4 TALaaA<br>-400 0<br>500 1000 1500 2000 2500 3000 3500 0.00 0.50 1.00 1.50 2.00 2.50<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
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2.50<br>IF=7A<br>IF=14A<br>IF=28A<br>2.25<br>Lu 2.00 |<br>Oo<br>xt<br>Kk<br>I<br>><br>Q 1.75<br>m4<br><x<br>aw<br>O ——<br>1.50<br>1.25<br>1.00<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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High�speed�switching�series�fifth�generation
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## **Package Drawing PG-TO247-3**
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IKW30N65H5
High�speed�switching�series�fifth�generation
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## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## IKW30N65H5
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|Subjects(major changes since last revision)|Subjects(major changes since last revision)|
|---|---|---|---|---|
|1.1|2014-09-22|Preliminarydata sheet|||
|1.2|2014-10-15<br>~~|_| Additional~~|_I_CES<br>~~Additional~~<br>~~~—svalue at~~|_T_vj|~~= 150°C~~|
|2.1|2015-05-06|Final data sheet|||
## **Information**
## **Warnings**
endangered.
17
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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