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IKW30N65EL5XKSA1
IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:85A; Collector Emitter Saturation Voltage Vce(on):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 227W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 85A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.05V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.6 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IGBT
TM CE(sat) IGBT in TRENCHSTOP _ 5 technology copacked with RAPID 1
## IKW30N65EL5
CE(sat)
IKW30N65EL5
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CE(sat)<br>TM<br>Low V CE(sat) IGBT in TRENCHSTOP _ 5 technology copacked with RAPID 1<br>fast and soft antiparallel diode<br>Features and Benefits: C<br>Low V CE(sat) L5 technology offering<br>* Very low collector-emitter saturation voltage V CEsat<br>¢ Best-in-Class tradeoff between conduction and switching losses<br>¢ 650V breakdown voltage<br>G<br>* Low gate charge Q G<br>E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>* Pb-free lead plating<br>* RoHS compliant eo<br>¢« Complete product spectrum and PSpice models: G yp<br>http://www.infineon.com/igbt/<br>Applications:<br>¢ Uninterruptible power supplies<br>G<br>¢ Solar photovoltaic inverters C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW30N65EL5|650V|30A|1.05V|175°C|K30EEL5|PG-TO247-3|
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IKW30N65EL5
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## Low�VCE(sat)�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Rev.�2.1,��2014-12-10
IKW30N65EL5
Low�VCE(sat)�series�fifth�generation
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||85.0<br>62.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||50.0<br>41.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||227.0<br>114.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,2)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.66|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.95|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
1) Defined by design. Not subject to production test.
2) Package not recommended for surface mount applications.
Rev.�2.1,��2014-12-10
4
IKW30N65EL5
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## Low�VCE(sat)�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=100°C<br>_T_vj=150°C|-<br>-<br>-|1.05<br>1.05<br>1.04|1.35<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=100°C<br>_T_vj=150°C|-<br>-<br>-|1.35<br>1.32<br>1.28|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|4.2|5.0|5.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C<br>_T_vj=175°C|-<br>-|-<br>400.0<br>2000.0|40.0<br>-<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|65.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4600|-|pF|
|Output capacitance|_C_oes||-|64|-||
|Reverse transfer capacitance|_C_res||-|18|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|168.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=60nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|308|-|ns|
|Fall time|_t_f||-|51|-|ns|
|Turn-on energy|_E_on||-|0.47|-|mJ|
|Turn-off energy|_E_off||-|1.35|-|mJ|
|Total switchingenergy|_E_ts||-|1.82|-|mJ|
Rev.�2.1,��2014-12-10
5
IKW30N65EL5
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## Low�VCE(sat)�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1500A/µs|-|87|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.91|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|21.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1250|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=60nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|31|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|370|-|ns|
|Fall time|_t_f||-|150|-|ns|
|Turn-on energy|_E_on||-|0.68|-|mJ|
|Turn-off energy|_E_off||-|2.18|-|mJ|
|Total switchingenergy|_E_ts||-|2.86|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1500A/µs|-|100|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.91|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|28.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1075|-|A/µs|
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Rev.�2.1,��2014-12-10
IKW30N65EL5
CE(sat)
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250<br>100 0a 225<br>aee<br>|SLEa aPecoUMATATeee TTT 200175 PK\ ff ff<br>a 10 eePUT TUM [ee] TM [ee] EeBE 150 EN<br>O a op)<br>a a 125 \<br>SCI<br>SO ei ny 9 100 Po} Ff XK] fF<br>s 1 fTTUM UE TETME TUTim ae¢ 75 | | | EN\<br>. PAISSS SSS ey ewe<br>a a 50 \<br>o_o on aw<br>25<br>PEI PT \<br>not for linear use<br>e i<br>0.1 i ) «SCC 0 EN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs, temperature<br>I Cmax defined by design - not subject to ( T vj ≤ 175°C)<br>production test)<br>I C P tot<br>**----- End of picture text -----**<br>
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90 90<br>VGE = 20V<br>80 oePN 80 18V a n<br>15V<br>a \ N |)Af<br>70 70<br>12V<br>Zzec]bE 60 oi\N\ | bEfs 60 10V Pp|<br>Ww Zz |<br>pio Ww }<br>8V<br>s 50 UNE 50 fy<br>s Ss 7V > i<br>oc 40 | |Xs\ a 40 6V i|<br>Oo Oo<br>Ww Ww<br>Bf AE WE<br>SN EV 30 30<br>20 20<br>ee ee eSee<br>10 10<br>0 0<br>|| | tT | F REE<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>
7
IKW30N65EL5
CE(sat)
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90 90<br>VGE = 20V T vj<br>80 18V Tt—// // 80 | — T vj =25°C<br>15V<br>yan ain<br>70 70<br>oe |e<br>12V<br>5 60 10V HI 5 60<br>WW 8V | WW<br>aw 50 IIL aw 50<br>7V<br>oO | | oO<br>O 40 6V NM | _—————s*™ O 40<br>5V<br>EN ae<br>3: 30 a aa 3: 30 |<br>20 KX 20<br>10 10<br>ey Ne ee ee ee<br>0 0<br>P AR P OLe r<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 3 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=175°C)
Figure 6. Typical ( _V_ CE=20V)
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1.3 a SE<br>— I C =7.5A | td(off) a se ee ee<br>--- I C =15A I tf a ee ee ee ee<br>= 1.2 none I C 230A ! td(on) a<br>tr<br>1000<br>a 1.1 ee — _eee<br>y, e e<br>pS a a ee ee ee ee ee<br>5 nD a a a ee ee ee ee<br>- 5 a a a ee ee ee<br>1.0<br>o a ee<br>o = \<br>100<br>a e ee<br>Ee 0.9 io) Ee<br>uw 5 po]<br>ra5 0.8 | | lO ES ajea ee ee ee ee oe<br>: ce a ce<br>10<br>A 0.7 —— a ee ee ee ee ee ee<br>- 2 a ee ee ee ee es ee<br>pe |<br>0.6<br>0.5 ptt | 1 aPt TT | ET |<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , test circuit in Figure E)
8
IKW30N65EL5
CE(sat)
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td(off) td(off)<br>(= tf Come 1000 Fm tf LI<br>td(on) td(on)<br>1000 H 2 tr foo | _—__— ' =— tr a—————<br>———————— i a a<br>[_— N eeseeee ee<br>@ a a a ee ee ee @<br>100<br>P 100 [epee<br>ru) | $e<br>Zz eale ru) a es<br>= a ee 2 pone———————————anna | [eeeeneseedesececeacedpeececeeniedcestesteapaeen] on<br>Sses pel7 |t--rpU7| | §. 10 a<br>10<br>. cael ee<br>a ee<br>a a a ee<br>1 1<br>0 10 20 30 40 50 60 70 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =30A, dynamic test circuit in I C =30A, R G(on)=10 Ω , R G(off)=10 Ω , dynamic<br>Figure E) test circuit in Figure E)<br>t t<br>**----- End of picture text -----**<br>
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7 8<br>typ. Eoff<br>min. Eon<br>max. 7 Ets<br>- El] ])])] ELLE<br>6<br>A<br>6<br>: eiTit tide<br>a 5 —— ® 5 ’<br>x 4 DM x 4 |<br>rm ~ A \ a<br>: ee NON gL Le<br>3<br>= 3 _ 5 ™\ iO ’ “| wa o4<br>Ww sy = 2 ¢ 1 : a<br>‘S<br>2<br>oO | :. 1 2 “an “7 , . | | |<br>1 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
( _I_ C=0.4mA)
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , dynamic test circuit in Figu
9
IKW30N65EL5
CE(sat)
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3.6<br>Eoff<br>Eon<br>es 3.2 f Ets ry<br>2.8 | | |<br>7p) 7p)<br>o 2.4 o<br>g E ge<br>2.0<br>1.6<br>Ww Ww<br>Zz Zz<br>I<br>O 1.2 O<br>0.8<br>0.4<br>0.0<br>0 10 20 30 40 50 60 70<br>R G , GATE RESISTANCE [ Ω ]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, I C =30A, dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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3.2<br>Eoff<br>Eon<br>2.8 Ets -<br>2.4<br>cep<br>2.0<br>1.6<br>1.2 -<br>I<br>0.8<br>0.4<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =30A, _R_ G(on)=10 Ω , _R_ G(off)=10 Ω , test circuit in Figure E)
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3.6 16 |<br>Eoff a — V CC = 130V<br>Eon ae --- V CC = 520V<br>3.2 Ets 14<br>2.8<br>12<br>Z PT | | pet ee a<br>2.4<br>10<br>2.0 t~ ow<br>uw “ FE 8 77<br>1.6<br>gf = __<br>6<br>x- Lo E :<br>O 1.2 <x<br>4<br>0.8<br>2<br>0.4<br>0.0 0<br>200 250 300 350 400 450 500 0 30 60 90 120 150 180<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=30A)
(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =30A, _R_ G(on)=10 Ω ; _R_ G(off)=10 Ω , test circuit in Figure E)
10
IKW30N65EL5
CE(sat)
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1<br>**----- End of picture text -----**<br>
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Cies<br>1E+4 Mm] Coes io a [TT]<br>Cres<br>1 e | pS, o EeTT tert yA eee<br>a peeTEIN AA<br>D = 0.5<br>Zz<br>el 0.2<br>- p oS 0.1 Pomcte 0.1 Ii<br>a EH aeere<br>5, V7 0.05<br>1000<br>SS S Ses ee<br>Zz eeen GK26 S 07 iesI 0.02 hil<br>0.01<br>9°E<a F xa aDsOeD«r TASVAT single pulse ||<br>< A PL<br>= b | /<br>0.01<br>. 100 aASee\ ~S~ | a ff}a a uu2¢ 86 FICC0)ta T :-f|<br>(es<br>nO ATM TTT TIM | esceees coc rere I<br>i: 1 2 3 4 5 6<br>ee ee ee Oi ri[K/W]: 0.0107 0.15506 0.17294 | 0.29017 0.02714 2.2E-3<br>τ i[s]: 2.0E-5 2.2E-4 2.0E-3 0.01147 0.09256 1.82712<br>10 P| of | pre 0.001 —_ |<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1 150<br>ol ____1__<br>| ce| | | | — T vj =_ 25°COo I F =S30A<br>_= CIi a errAAA 140130 7--- T vj 7= 150°C, I ] F =30A | |<br>e Ce D = 0.5<br>5 ee<br>120<br>0.2<br>oa| 0.1 TCR2) Gee 0.1 1 (i) #7= 110 \<br>0.05<br>S SS a! (i | —— > \<br>= EAT te ae 100<br>0.02<br>2 SS 0.01 tm B 90 yN RPPP<br>im single pulse im<br>ee2 Ld lime 2 80 |Ke<br>Zz (00 ind “s a<br>ee 0.01 Bf 70 ONS te<br>7 2200 S = ~<br>2 o o<br>60<br>s oe, a yo | | |PR<br>ee- ooCCT EU CoCTL -- {ili - 50 Ff |S7<br>PABA S|<br>PY) CUM i: 1 TTT 2 CCT 3 ELT 4 EAT 5 6 TT 40 Ff fl<br>ri[K/W]: 0.031494 0.220947 0.291265 0.366808 0.03663 2.3E-3<br>τ i[s]: 2.5E-5 2.1E-4 1.7E-3 0.010113 0.08082 1.811337<br>0.001 30<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1000 1500 2000 2500 3000 3500 4000<br>t p , PULSE WIDTH [s] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20.
( _V_ R=400V)
11
IKW30N65EL5
CE(sat)
**==> picture [250 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.25 |<br>T vj I F<br>ii T vj = 150°C, I F =30A<br>Luge_ 2.001.75 [np° tet.Eb<br>ina iad<br><x w<br>oO 1.50 oO<br>: ef<br>Ww<br>re<br>1.25<br>Lu<br>:a 1.00 Bol<br>Ww<br>Wwei 0.75 | | | Tsiu<br>0.50<br>0.25<br>1000 1500 2000 2500 3000 3500 4000<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
50 LS |<br>T vj I F<br>45 oo T vj = 150°C, I F =30A<br>40<br>| P p pa<br>-<br>35 —=<br>--7<br>ue<br>30<br>| bebe TT<br>,<br>ee<br>25<br>¢<br>20<br>eT<br>15 eee}<br>10<br>5<br>0<br>1000 1500 2000 2500 3000 3500 4000<br>dI F /dt , DIODE CURRENT SLOPE [A/us]<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
-500 | 90 ji<br>— T vj =25°C, I F =30A — T vj _ = 25°C /<br>--- T vj = 150°C, I F =30A --- T vj = 175°C 7<br>80<br>g -750 - a<br>70<br>LL . =<br>-1000<br>|2 60<br>XN Lu<br>LL \s 2<br>LL -1250 \ na 50<br>ag we ee LL ind 40 /\<br>“ -1500<br>aO 30<br>w LL<br>ra -1750 ~<br>20<br>-2000<br>10<br>-2250 0<br>1000 1500 2000 2500 3000 3500 4000 0.0 0.5 1.0 1.5 2.0 2.5<br>dI F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
12
IKW30N65EL5
CE(sat)
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**----- Start of picture text -----**<br>
1.6<br>I F<br>r I F = 15A af<br>1.5<br>--- I F |<br>1.4 | | |<br>s 1.3 f t<br>Oo<br>Kk<xgp 1.2<br>I<br>Sof<br>><br>Q 1.1<br>m4<br>ef ee<br>1.0<br>z -<br>Bf> 0.9 |<br>0.8<br>P| ft | ~~ S<br>0.7<br>0.6<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
13
IKW30N65EL5
Low�VCE(sat)�series�fifth�generation
**==> picture [146 x 65] intentionally omitted <==**
## PG-TO247-3
14
Rev.�2.1,��2014-12-10
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Low�VCE(sat)�series�fifth�generation
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**----- Start of picture text -----**<br>
V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
Figure D.
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CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## Low VCE(sat) series fifth generation
## Revision History
## IKW30N65EL5
Revision: 2014-12-10, Rev. 2.1
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2014-12-10|Final data sheet|
## We Listen to Your Comments
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## Published by
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## Legal Disclaimer
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## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1, 2014-12-10
16
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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