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IKW30N60H3FKSA1
IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 187W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.3 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
IKW30N60H3
IKW30N60H3
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Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>* low EMI<br>* Very soft, fast recovery anti-parallel diode<br>G<br>* maximum junction temperature 175°C<br>E<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/ &<br>Applications:<br>* uninterruptible power supplies , =<br>* welding converters ‘A<br>* converters with high switching frequency<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW30N60H3|600V|30A|1.95V|175°C|K30H603|PG-TO247-3|
2
IKW30N60H3
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## High�speed�switching�series�third�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.�2.2,��2014-03-12
IKW30N60H3
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## High�speed�switching�series�third�generation
## **Maximum�ratings**
|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||60.0<br>30.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||30.0<br>15.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||187.0<br>94.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||1.90|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.2,��2014-03-12
4
IKW30N60H3
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## High�speed�switching�series�third�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.95<br>2.30<br>2.50|2.40<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.67<br>1.65|2.05<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.43mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>2000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|16.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1630|-|pF|
|Output capacitance|_C_oes||-|107|-||
|Reverse transfer capacitance|_C_res||-|50|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=30.0A,<br>_V_GE=15V|-|165.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|160|-|A|
Rev.�2.2,��2014-03-12
5
IKW30N60H3
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## High�speed�switching�series�third�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=10.5Ω,_L_σ=95nH,<br>_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|33|-|ns|
|Turn-off delaytime|_t_d(off)||-|207|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.94|-|mJ|
|Turn-off energy|_E_off||-|0.44|-|mJ|
|Total switchingenergy|_E_ts||-|1.38|-|mJ|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1000A/µs|-|38|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.32|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-765|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=10.5Ω,_L_σ=95nH,<br>_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|239|-|ns|
|Fall time|_t_f||-|23|-|ns|
|Turn-on energy|_E_on||-|1.12|-|mJ|
|Turn-off energy|_E_off||-|0.60|-|mJ|
|Total switchingenergy|_E_ts||-|1.72|-|mJ|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1000A/µs|-|117|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.08|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-530|-|A/µs|
6
Rev.�2.2,��2014-03-12
IKW30N60H3 High speed switching series third generation
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80<br>100<br>70 T_TAa M =| TT a ey (31 RSE<br>OTE Eo AE<br>60<br>—< f LUIE V NUs ogiSo<br>e l = SanDy e ceanll,<br>50 tp=1µs<br>10<br>oepeera aa alll<br>10µs<br>6 WK ||) N oe ee ay see eeeae<br>orSt 40 [LTALZANTAY LTT) 2o etie 50µs ee eaNSIlll<br>AINE AT TTT 8 Fy Iere<br>oS 100µs ren aT<br>30 oF TTIW DEON VT 0 Ee<br>4 eT eT<br>Ooa | IY, /| NAas Z| \ ei4 1 200µs pp wee = WII:<br>- TC=80° YW VY ~\ Oo ee 500µs<br>20 ACA LATEST] SSS SSS<br>PCT TC=110° L SNOT FE DC Ht<br> A\| A IN a ll<br>10 TC=80° Ae COSA<br>TC=110° if<br>ill<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =400V, V GE=15/0V,<br>r G=10,5 Ω )<br>200 60<br>KEE<br>175<br>|<br>50<br>{Xt 150<br>=, <x<br>40<br>ei 125 oN fg<br>7 3<br>SEEN<br>EENv= 10075 \ 6 30<br>20<br>ee<br>50<br>10<br>25<br>po<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ j ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C)
7
High speed switching series third generation IKW30N60H3
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120 120<br>pe VGE=20V | VGE=20V IY<br>100 100<br>es 17V er Ae ee ee 17V ee ee<br>15V 15V<br>; Hy |). (<br>. 80 13V Hy E 80 13V n/a<br>11V 11V<br>9V 9V<br>60 60<br>: mp A iy A<br>7V 7V<br>5V 5V<br>40 40<br>Se NG) Qn NY,<br>20 20<br>Nee AN<br>Jn<br>0 | 0 AEX<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>I C I C<br>**----- End of picture text -----**<br>
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100 4.0<br>Tj=25°C IC=15A<br>90 Tj=175°C IC=30A<br>IC=60A<br>sy, ST<br>3.5<br>80<br>pT Ti | | fg 4<br>70<br>e f ag] e e<br>3.0<br>60<br>50 2.5<br>Ss fo | fe dE<br>mm 40 O<br>2.0<br>30<br>fA 8<br>9 20 Po | Ee ; P] fy ie<br>1.5<br>ALT © pt<br>10<br>peytrerA LILLE<br>0 1.0<br>5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175<br>V GE ,GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
8
IKW30N60H3
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—— 1000 a<br>td(off) td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>Qe — | —< a—<—<—ee<br>> a e<br>Z a<br>ta 100 ta<br>=aa<br>gSaOo 100<br>Oo 8<br>Se ee ne eeDC 2<br>2v<br>SfueB<br>PER * ee<br>po [eeficbchsPA)] Ee<br>7<br>10 10<br>5 16 27 38 49 60 3 8 13 18 23 28 33<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=10,5 , test circuit in Fig. E) I C =30A, test circuit in Fig. E)<br>7<br>y— td(off) —_ typ.<br>tf min.<br>| td(on) max.<br>tr —<br>ee [eee:] Ww 6<br>|<br>fe) —<br>= ;<br>(0= 100 a a a M7)So) 5 Pe oN<br>F a ee ee Ww<br>Oo a a<br>4<br>Lu . ‘ ~<br>a .<br>3<br>10 2<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching times as a function of Figure 12. Gate-emitter threshold voltage as a<br>junction temperature of junction temperature<br>(ind. load, V CE =400V, V GE =15/0V, I C=30A, ( I C=0.43mA)=0.43mA)<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
( _I_ C=0.43mA)=0.43mA)
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**----- Start of picture text -----**<br>
r G=10,5<br>**----- End of picture text -----**<br>
9
IKW30N60H3
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**----- Start of picture text -----**<br>
5 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>2.5<br>~ 4 fo l tl, E<br>7p)ep f e 7p)dg<br>Ww Ww<br>7)o , 7)o 2.0<br>ett ea’<br>—! 3 / —!<br>4 Vv ) -<br>PL<br>O)Ww | or 1.5 . Lee -<br>Zz 5 Ww at —<br>et , z aw ae<br>2<br>Z / a (u)Z _ 7<br>oO arr ef - ae<br>1.0<br>Sp Lae Ee fe<br>1 2 Z — | -<br>°- tat tiet| 8 0.5 —<br>eer4 aT I ~<br>0 0.0<br>ert tT Tt<br>5 10 15 20 25 30 35 40 45 50 55 60 3 8 13 18 23 28 33<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=10,5=10,5 , test circuit in Fig. E) I C =30A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
_r_ G=10,5=10,5
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**----- Start of picture text -----**<br>
2.0 2.5<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>2.0<br>1.5<br>Ww Ww<br>7) 7) a<br>ep) ep) a<br>oO—! Oa 1.5 ot“<br>O 19) -<br>a a oa<br>Ww 1.0 Ww<br>Z Z ue<br>ef ee] eZee<br>1.0<br>Z Z ae uc<br>i I en ule<br>=Bp 0.5 __ | i =yg fe ma a ee<br>0.5<br>0.0 0.0<br>0 25 50 75 100 125 150 175 200 250 300 350 400 450<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =400V, V GE =15/0V, I C=30A, (ind. load, T j =175°C, V GE =15/0V, I C=30A,<br>r G=10,5 , test circuit in Fig. E) r G=10,5 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
10
IKW30N60H3
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**----- Start of picture text -----**<br>
16 | ’<br>120V<br>480V ) a<br>14 Ed.<br>YY) Ree)<br>/ ra 1000 e a e<br>12<br>Ww ry Cs Cies az<br>) / _ Es Coes ||<br>Cres<br>< 10 / ‘ ra ee |<br>ow - H mA<br>ul 8 fT | < i —<br>100<br>in & es ee ee<br>WH 6 O a<br>O) a ee<br>4<br>2<br>0 10<br>0 20 40 60 80 100 120 140 160 180 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 17. Typical ( _I_ C=30A)
Figure 18.
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
380 15<br>nee<br>330<br>12<br>: Ate Lititt itt<br>petit ye Re<br>5 / E PN<br>O 280 a - ee<br>: | a SEE<br>9<br>By2 BELEN EL<br>es 2 a<br>230<br>e TTP é EEL PN<br>: fiAy ~<br>6<br>ge 3 ><br>:eee: 180 Ti}ztc |ee {tiet eit tRsaN<br>: e {ttt<br>3<br>a ae<br>130<br>“ TYEPPPPererey} LLP EEE EL<br>80 0<br>10 12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19. Typical short circuit function of gate-emitter ( _V_ CE 400V, start at _T_ j=25°C)
Figure 20.
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**----- Start of picture text -----**<br>
( V CE 400V, start at T j 150°C)<br>**----- End of picture text -----**<br>
11
~~High speed switching series third generation~~ IKW30N60H3
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1<br>HH CTT ETI TTI TIT TTT TTT LU<br>| ail<br>1<br>sot eer me er crs LeU<br>S ae S EH ee Ht<br>D=0.5 D=0.5<br>uw YUM ME AT tt | Ww oC ea ee<br>oO CC eee Cl oO a 11<br>0.2 0.2<br>ee2 0.1 OAi77 0.1 il 2 ECCT 0.1<br>o eee | | 0.05 1 Y/Yf HL 0.05<br>= SeaCIi SEN aery i oon o= ATLPla wien<br>0.02 0.1 0.02<br>2 ft Sse ee |<br>0.01 0.01<br>single pulse single pulse<br>. etWaa) er<br>| TT, ar<br>0.01<br>Be eT FATE TCE Ul<br>0.01<br>z HCH ~H & EH ii<br>- /| pI Cote Re - / Ci=HIRi Co=telRe<br>i: 1 2 ee 3 4 i: va 1 2 3 4 5 6<br>j p ri[K/W]: 0.05279329 0.1938242 0.2577884 0.2956575 ri[K/W]: ATI 0.03699993 TAT 0.2369531 ETT 0.5871755 ETT 0.5383902 ooo 0.4303575 0.06991293 h<br>τ i[s]: 6.5E-5 4.7E-4 6.1E-3 0.06477749 τ i[s]: 7.4E-6 7.2E-5 4.9E-4 3.9E-3 0.02552312 0.1109614<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance Figure 22. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>( D = t p/T)<br>200 1.50<br>Tj=25°C, IF = 30A Tj=25°C, IF = 30A<br>Tj=175°C, IF = 30A Tj=175°C, IF = 30A<br>175<br>1.25<br>> 2<br>150<br>7 3<br>-2 tf.. Ef td xr: 1.00 7 - ~ : 7<br>125<br>Ww oS i _ .<br>100 0.75<br>uw oe or<br>o 75 PTT PMI]<br>z i 0.50<br>50<br>i pi} it ly ys | |<br>0.25<br>Pa eer<br>25<br>0 0.00<br>800 1000 1200 1400 1600 800 1000 1200 1400 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>thJC thJC<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 23. Typical of diode ( _V_ R=400V)
Figure 24.
( _V_ R=400V)
12
IKW30N60H3
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22 0<br>Tj=25°C, IF = 30A Tj=25°C, IF = 30A<br>Tj=175°C, IF = 30A Tj=175°C, IF = 30A<br>20<br>-200<br>— et a a PTT T T ] | |<br>5 18 2 ae<br>~ . : 7<br>oO a a -400<br>16<br>aef iy]~~ Lye5 EEE<br>14<br>2 ghee<br>-600<br>Ww |<br>: ®<br>Lu 12 Pa SspL LK tT |er<br>TK—<br>aea . -800 = —| | | |<br>10<br>8 -1000<br>PET ty<br>800 1000 1200 1400 1600 800 1000 1200 1400 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 25. Typical function ( _V_ R=400V)
Figure 26.
( _V_ R=400V)
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60 a 1 2.50 a<br>Tj=25°C IF=7.5A<br>Tj=175°C IF=15A<br>IF=30A<br>50 2.25<br>bE 40 ‘ Lu 2.00<br>Zz Oo<br>im <x<br>E 3<br>3B ><br>@ 30 7 Q 1.75<br>' <x<br>zt /: a<br>%= /| ©=<br>20 1.50<br>/EE<br>10 1.25<br>0 1.00<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 27.
Figure 28.
13
IKW30N60H3
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High�speed�switching�series�third�generation
## PG-TO247-3
14
Rev.�2.2,��2014-03-12
IKW30N60H3
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## High�speed�switching�series�third�generation
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15
Rev.�2.2,��2014-03-12
IKW30N60H3
## IKW30N60H3
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2010-02-01|-|
|1.2|2010-07-26|Preliminarydatasheet|
|2.1|2013-12-09|New value IRmax limit at 175°C|
|2.2|2014-03-12|Max ratings Vce, Tvj ≥25°C|
## **Information**
## **Warnings**
endangered.
16
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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