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IKW30N60DTPXKSA1
IGBT, 53 A, 1.6 V, 200 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 200W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 53A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 1.72 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
TRENCHSTOP[TM] erformance
## IKW30N60DTP
TRENCHSTOP[TM] P erformance
## IKW30N60DTP
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TRENCHSTOP [TM] P erformance<br>**----- End of picture text -----**<br>
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Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>+ low turn-off losses<br>¢ short tail current<br>G<br>* low EMI<br>E<br>* Very soft, fast recovery anti-parallel diode<br>* maximum junction temperature 175°C<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models: =<br>http://www.infineon.com/igbt/<br>Applications:<br>+* drivessolar inverters y 4<br>* uninterruptible power supplies<br>* converters with medium switching frequency<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW30N60DTP|600V|30A|1.6V|175°C|K30DDTP|PG-TO247-3|
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IKW30N60DTP
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## TRENCHSTOP[TM] �P erformance �Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.�2.1,��2016-02-08
IKW30N60DTP
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## TRENCHSTOP[TM] �P erformance �Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Parameter**|**Parameter**|**Symbol**|||**Value**|**Value**||**Unit**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|||_V_CE|||600|||V||
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|||_I_C|||53.0<br>38.0|||A||
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|||_I_Cpuls|||90.0|||A||
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs1)|||-|||90.0|||A||
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|||_I_F|||39.0<br>24.0|||A||
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|||_I_Fpuls|||90.0|||A||
|Gate-emitter voltage|||_V_GE|||±20|||V||
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|||_t_SC|||5|||µs||
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|||_P_tot|||200.0<br>100.0|||W||
|Operating junction temperature|||_T_vj||-40...+175||||°C||
|Storage temperature|||_T_stg||-55...+150||||°C||
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s||||||260|||°C||
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|||_M_|||0.6|||Nm||
|**ThermalResistance**|||||||||||
|**Parameter**|**Symbol **|**Conditions**|||||**Value**|||**Unit**|
||||||**min.**||**typ.**|**max.**|||
|**RthCharacteristics**|||||||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||||-||0.50|0.75||K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||||-||0.99|1.55||K/W|
1) Defined by design. Not subject to production test.
Rev.�2.1,��2016-02-08
4
IKW30N60DTP
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## TRENCHSTOP[TM] �P erformance �Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.60<br>1.94|1.80<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.48mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|26.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1050|-|pF|
|Output capacitance|_C_oes||-|58|-||
|Reverse transfer capacitance|_C_res||-|36|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=30.0A,<br>_V_GE=15V|-|130.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|137|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.5Ω,_R_G(off)=10.5Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|15|-|ns|
|Rise time|_t_r||-|21|-|ns|
|Turn-off delaytime|_t_d(off)||-|179|-|ns|
|Fall time|_t_f||-|12|-|ns|
|Turn-on energy|_E_on||-|0.71|-|mJ|
|Turn-off energy|_E_off||-|0.42|-|mJ|
|Total switchingenergy|_E_ts||-|1.13|-|mJ|
Rev.�2.1,��2016-02-08
5
IKW30N60DTP
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## TRENCHSTOP[TM] �P erformance �Series
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1160A/µs|-|76|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.45|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|150|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.5Ω,_R_G(off)=10.5Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|15|-|ns|
|Rise time|_t_r||-|23|-|ns|
|Turn-off delaytime|_t_d(off)||-|220|-|ns|
|Fall time|_t_f||-|59|-|ns|
|Turn-on energy|_E_on||-|0.99|-|mJ|
|Turn-off energy|_E_off||-|0.74|-|mJ|
|Total switchingenergy|_E_ts||-|1.73|-|mJ|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1160A/µs|-|134|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.23|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|135|-|A/µs|
6
Rev.�2.1,��2016-02-08
TRENCHSTOP[TM] erformance
## IKW30N60DTP Series
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250<br>100<br>CA 200<br>_ YT TT TTT TE _<br>x a | =<br>tp=1µs<br>6 LUM AE a Z<br>ee<br>150<br>a <x<br>=) 10 ee Oo<br>O et ee et te]<br>ad ed<br>e) YT TT TTT ra)<br>BH |<br>eg eR 100<br>OQ8. 1 UIeeLIM LIM TUNEee eee| &.<br>PE et<br>to<br>50<br>a ee eeeee<br>a<br>0.1 0<br>0.1 1 10 100 1000 25 50 75 100 125 150 175<br>V CE ,COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T j 175°C; V GE=15V) temperature<br>( T j ≤ 175°C)<br>75 90<br>80 VGE=20V<br>15V<br>70 KA<br><< 13V<br>a<br>50 60 11V<br>a : Wa<br>9V<br>ia NN if \ \Y |<br>EE 50 SQ<br>) ) \ Y<br>PPS ia 7V<br>g S| 40 \\NW/<br>O g \ ND<br>ut O \// \/<br>e 25 \ ute 30 \ LX/) —<br>20<br>: NG ee ee<br>10<br>fp \<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T j=25°C)<br>( V GE ≥ 15V, T j ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
7
TRENCHSTOP[TM] P erformance
## IKW30N60DTP
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**----- Start of picture text -----**<br>
90 60<br>Tj=25°C<br>Tj=175°C<br>80 VGE=20V lL |<br>15V<br>S\ Y/Y)/ fo ) lf||<br>70<br>Na [2] 45 i<br>13V<br>Zz=E 60 11V 5 \ /7 Va Zz=E /<br>9V<br>£S| 50 \ N —| & /<br>7V<br>30<br>aOu 40 YYNOYYY oOaIu || { |<br>2 30 IX<> a<br>) NX [_— Ss)<br>15<br>ee 20<br>10 nyYY ANYXLe ee _ eee<br>PaATTL =a<br>0 0<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T j=175°C) ( V CE=20V)<br>3.5<br>IC=19A<br>IC=38A<br>IC=76A<br>== p e | | | tf tT tT e ft ft ft ft ft<br>PST P td(off) E<br>3.0<br>Ee: LspM 100 ttfd(on)<br>=)eE { ||oF eT a De a tr EEEee ee a<br>pf Uo s e d<br>| PR B S SSeS<br>2.5<br><< uw e e eee<br>Peete pee<br>WWa =9 {i} i} |deer}|<br>°2 2.0 =} eee<br>ae -—— 10 a ee eee<br>Lu2.a—_—— 2) --—-----———ee<br>5Le ee<br>O eeeee ee<br>fr 1.5 i<br>1.0 1<br>25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45 50 55 60 65<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>I C I C<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
_T_ j =175°C, _V_ CE =400V, _V_ GE=15/0V,
_r_ G=10.5
8
IKW30N60DTP
TRENCHSTOP[TM] P erformance
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**----- Start of picture text -----**<br>
1000 a<br>I td(off) ee td(off)<br>tf tf<br>(eeI td(on) oe ee ee eeeeee ( ee td(on)<br>1 eee<br>tr po | tr<br>e PP | eere — ee ooo<br>a e e<br>ty ty 100 a es<br>=eo 100 foe gp= a eeee<br>ee<br>rs) a a ee<br>Pe foyeree =><br>ry eB fT<br>Bs fT<br>O fo] | [es | bey @ A<br>Pee tet<br>a 4<br>Za<br>p ert “an<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, V CE =400V, V GE =15/0V, I C=30A,<br>I C =30A, test circuit in Fig. E) r G=10.5 , test circuit in Fig. E)<br>6.0 5<br>typ. Eoff<br>min. Eon<br>max. Ets<br>5.0<br>O i ~~ >= /<br>4<br>a1 4.0 = ~~ ‘SN a /<br>: ~~ SY 8 3 é<br>Op) > > /<br>WW ~ O / /<br>a ~ o~ / /<br>rc 3.0 Lu 7<br>- ~ Z / /<br>or ~ i /<br>imF—= 2.0 N N (o)Zz 2 7 v “4<br>uy 5 y<br>imwi == 774 7<br>5 % 1 aaa<br>1.0<br>0.0 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0,48mA)
Figure 12.
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**----- Start of picture text -----**<br>
T j =175°C, V CE =400V, V GE=15/0V,<br>**----- End of picture text -----**<br>
_r_ G=10.5
9
## IKW30N60DTP
## TRENCHSTOP[TM] P erformance
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**----- Start of picture text -----**<br>
4 2.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>> “ > ae<br>& 7 & ae<br>3 1.5<br>uw y uw oa<br>7) “ 7) --<br>fe)o Z Y fe)o ce _-<br>aa L a Le<br>2 a“ 5 ao<br>Zz 2 ai a“ Zz 1.0 abo<br>Ww _ a =a Ww _ _—<br>Y) ~ a Yo) aa<br>Zz z -—<br>Pes= 1 a7 LL aaa et= 0.5 esaa<br>0 0.0<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (indload, V CE =400V, V GE =15/0V, I C=30A,<br>I C =30A, test circuit in Fig. E) r G=10.5 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
3.0 16<br>Eoff 120V<br>Eon 480V<br>Ets 14 L<br>a Ed ) ly,<br>2 2.5 “ce /<br>E 7<br>a“ S 12 Lf<br>aS : eT |AZ<br>2.0<br>rs) ? K 10<br>aa] ae 7<br>uwa 1.5 va “| 6 8 ; |<br>Zz > =<br>WwW oe = i<br>ane“ < = rf=<br>6<br>: 1.0 7 | 4<br>ee S<br>0.5<br>2<br>0.0 0<br>300 350 400 450 500 550 600 0 25 50 75 100 125 150<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=30A)<br>(ind. load, T j =175°C, V GE =15/0V, I C=30A,<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 15. Typical<br>function<br>(ind.<br>r G=10.5<br>**----- End of picture text -----**<br>
10
IKW30N60DTP
TRENCHSTOP[TM] P erformance
**==> picture [471 x 312] intentionally omitted <==**
**----- Start of picture text -----**<br>
250<br>a<br>a<br>HEUHERURRUEED 20<br>200<br>1000<br>Cies<br>Coes<br>Cres<br>gg| ESe s| | re) PELLET4<br>150<br>i r e<br>ee as a<br>e f<br>2 i e Le<br>& \ NY 5 100 va<br>100<br>° pS FITS<br>a es ee 50 ne<br>10 0<br>0 10 20 30 12 13 14 15 16 17 18 19 20<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 400V, start at T j=25°C)<br>C<br>I C(SC)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
16 TT... Set sett sett ae a<br>14 Nee TM Tem<br>SZ<br>nm Sai ot<br>0.1<br>D=0.5<br>2<br>12 A<br>0.2<br>: f ee 0.1<br>10 0.05<br>- {{[ ti] NTT<br>0.02<br>pe | le 0.01 become nc<br>8 SON Se 0.01 ll<br>single pulse<br>e | | fi fy i oe NG] LG FAR HAF EisTt<br>5 Tr YT AUT TET TE tT ml<br>6<br>eg ttt tt ttINE GACH<br>—<br>wl tse V I<br>0.001<br>4<br>2)5 See feZ PT|Se SeereeAIG (Hla or, i. Aemaui!<br>2<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.01683439 0.09776416 0.1309769 0.2343649 0.02236283 1.3E-3<br>τ i[s]: 3.1E-5 1.8E-4 1.9E-3 0.01018811 0.07263209 1.842143<br>0 1E-4<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. Typical IGBT transient thermal impedance<br>gate-emitter voltage ( D = t p/T)<br>( V CE 400V, start at T j 150°C)<br>t SC thJC<br>Z<br>**----- End of picture text -----**<br>
11
~~Series~~ IKW30N60DTP
TRENCHSTOP[TM] erformance
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250<br>1 TT TTjj=25°C, I=175°C, IF = 15AF = 15A<br>ae<br>S C O naoey ag |<br>x ET 7 a<br>D=0.5<br>200<br>0.2<br>r < 0.1 F ITAre cere 0.1 IUMTT @y= YS<br>anS a/RCo ee 0.05 COCCn CoCo} =<br>= A 0.02 CT or ~<br>e2 EF4 0.01 ill] 3 150 :<br>0.01 single pulse<br>FIEe ee Cott ia<br>EK Sateen ~<br>Zz |)<br>wl PT x<br>3 LY A<br>“|| 2 100 =<br>0.001<br>SN Ho<br>Zoo ooo<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.04353125 0.2210579 0.3082576 0.3612311 0.05160983 1.5E-3<br>τ i[s]: 2.7E-5 1.4E-4 1.1E-3 7.0E-3 0.04562608 1.816282<br>ekeeeeeednoerno* \ sy<br>1E-4 50<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 600 700 800 900 1000 1100 1200 1300<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical diode transient thermal impedance Figure 22. Typical reverse recovery time as a function<br>as a function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>2.0 20<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>Tj=175°C, IF = 15A Tj=175°C, IF = 15A<br>fc _ L<br>Ww 1.5 5 15 4<br>Lg 5g eea LL<br>ef eb Te<br>> 1.0 Wi 10 |<br>fe J<br>ia Ww<br>é g [or<br>Wi<br>5 0.5 ee 5<br>° 0.0 TTTTTATTTY ° 0 SL EELL RELL EEL<br>600 700 800 900 1000 1100 1200 1300 600 700 800 900 1000 1100 1200 1300<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>thJC<br>Z<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 23. Typical function ( _V_ R=400V)
Figure 24.
( _V_ R=400V)
12
IKW30N60DTP
## TRENCHSTOP[TM] P erformance
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0 60<br>Tj=25°C, IF = 15A Tj=25°C<br>Tj=175°C, IF = 15A Tj=175°C<br>50<br>z -50<br>ne Zz<br>re) SK 5 40<br>= wa<br>(o} a)<br>:g -100 ‘SSN re) 30 P| | lf<br>:© <q. :<x<br>20<br>= ~N<br>ne} .<br>3 ‘ °<br>. -150 NX N J<br>NA 10 f<br>“<br>-200 0 z — _——"|<br>600 700 800 900 1000 1100 1200 1300 0.0 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
( _V_ R=400V)
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2.4<br>IF=7,5A<br>IF=15A<br>2.2 IF=30A<br>2.0<br>Ww<br>Oo<br><x 1.8<br>Kk<br>_!<br>><br>Q 1.6<br>x<br>< —_—<br>w 1.4 _—>—<br>E 1.2 a eett<br>i | |<br>1.0<br>|] | |rr<br>0.8<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
13
IKW30N60DTP
TRENCHSTOP[TM] �P erformance �Series
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## **Package Drawing PG-TO247-3**
14
Rev.�2.1,��2016-02-08
IKW30N60DTP
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TRENCHSTOP[TM] �P erformance �Series
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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Rev.�2.1,��2016-02-08
## IKW30N60DTP
## TRENCHSTOP[TM] P erformance
|Revision History|||
|---|---|---|
|IKW30N60DTP|||
|Revision: 2016-02-08,|Rev. 2.1||
|Previous Revision|||
|Revision<br>Date||Subjects(major changes since last revision)|
|2.1<br>-||Release final datasheet|
## party.
## **Warnings**
16
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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