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IKW25T120FKSA1
IGBT, General Purpose, 50 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V; Available until stocks are exhausted Alternative available
- MSL: -
- SVHC: No SVHC (23-Jan-2024)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 190W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 150°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.99 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
IKW25T120
**TrenchStop[®]** Series
## Low Loss DuoPack : IGBT in **TrenchStop[®]** and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
- Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D
- Short circuit withstand time – 10s
- Designed for :
- Frequency Converters
- Uninterrupted Power Supply
- **TrenchStop[®]** and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
C G i E **PG-TO-247-3**
- NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
- Low EMI
- Low Gate Charge
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- Qualified according to JEDEC[1] for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
|**Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**<br>~~——~~|**Value**<br>~~——~~|**Unit**|
|Collector-emitter voltage<br>~~/~~|_V_C E<br>~~——~~<br>~~/~~<br>~~|~~|1200<br>~~——~~<br>|V|
|DC collector current<br>_T_C= 25C<br>_T_C= 100C<br>~~/~~|_I_C<br>~~/~~<br>~~|~~|50<br>25<br>|A|
|Pulsed collector current,_t_plimited by_T_jmax<br>~~/~~|_I_Cpul s<br>~~/~~<br>~~|~~|75<br>||
|Turn off safe operating area<br>_V_CE1200V,_T_j150C<br>~~/~~|_-_<br>~~/~~<br>~~|Pf~~|75<br>~~Pf~~||
|Diode forward current<br>_T_C= 25C<br>_T_C= 100C|_I_F<br>~~pf~~|50<br>25<br>~~pf~~||
|Diodepulsed current,_t_plimited by_T_jmax|_I_Fpul s<br>~~pf~~|75<br>~~pf~~||
|Gate-emitter voltage|_V_G E<br>~~ff~~|20<br>~~ff~~|V|
|Short circuit withstand time2)<br>_V_GE= 15V,_V_CC1200V,_T_j150C<br>~~PF~~|_t_SC<br>~~Pf~~<br>~~PF[~~|10<br>~~Pf~~|s|
|Power dissipation<br>_T_C= 25C<br>~~PF~~<br>~~-~~|_P_t ot<br>~~PF[~~<br>~~-~~<br>~~|~~|190<br>~~——~~|W|
|Operating junction temperature<br>~~PF~~<br>~~-~~|_T_ j<br>~~PF [~~<br>~~-~~<br>~~|~~|-40...+150<br>~~——~~|C|
|Storage temperature<br>~~-~~|_T_st g<br>~~-~~<br>~~|~~|-55...+150<br>~~——~~||
1 J-STD-020 and JESD-022
- 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
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**TrenchStop[®]** Series
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|lderingtemperature, 1.6mm(0.063 in.)from case for 10s|-|260||
|---|---|---|---|
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## **Thermal Resistance**
|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**|
|**Characteristic**|||||
|IGBT thermal resistance,<br>junction – case|_R_t hJC||0.65|K/W|
|Diode thermal resistance,<br>junction – case|_R_t hJC D||1.0||
|Thermal resistance,<br>junction – ambient|_R_t hJA||40||
## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified
|**Electrical Characteristic,**at_T_j= 25|C, unless ot|herwise specified|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Static Characteristic**|||||||
|Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V, _I_C=500A|1200|-|-|V|
|Collector-emitter saturation voltage|_V_C E( sat )|_V_G E = 15V, _I_C=25A<br>_T_j=25C<br>_T_j=125C<br>_T_j=150C|-<br>-<br>-|1.7<br>2.0<br>2.2|2.2<br>-<br>-||
|Diode forward voltage|_V_F|_V_G E=0V, _I_F=25A<br>_T_j=25C<br>_T_j=125C<br>_T_ j=150C|-<br>-<br>-|1.7<br>1.7<br>1.7|2.2<br>-<br>-||
|Gate-emitter threshold voltage|_V_G E( t h)|_I_C=1mA,<br>_V_C E=_V_G E|5.0|5.8|6.5||
|Zero gate voltage collector current|_I_CE S|_V_C E=1200V,<br>_V_G E=0V<br>_T_j=25C<br>_T_j=150C|-<br>-|-<br>-|0.25<br>2.5|mA|
|Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V|-|-|600|nA|
|Transconductance|_g_fs|_V_C E=20V, _I_C=25A|-|16|-|S|
|Integratedgate resistor|_RG int_|||8||Ω|
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## **Dynamic Characteristic**
|**Dynamic Characteristic**|||||||
|---|---|---|---|---|---|---|
|Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|1860|-|pF|
|Output capacitance|_C_os s||-|96|-||
|Reverse transfer capacitance|_C_rs s||-|82|-||
|Gate charge|_Q_Gat e|_V_C C=960V, _I_C=25A<br>_V_G E=15V|-|155|-|nC|
|Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|13|-|nH|
|Short circuit collector current1)|_I_C( SC )|_V_G E=15V,_t_SC10s<br>_V_C C = 600V,<br>_T_j =<br>25C|-|150|-|A|
## **Switching Characteristic, Inductive Load,** at _T_ j=25 C
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=25C,<br>_V_C C=600V,_I_C=25A<br>_V_G E=0/15V,<br>_R_G=22,<br>_L_<br>_2 )_=180nH,<br>_C_<br>_2)_=39pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|50|-|ns|
|Rise time|_t_r||-|30|-||
|Turn-off delaytime|_t_d( of f)||-|560|-||
|Fall time|_t_f||-|70|-||
|Turn-on energy|_E_o n||-|2.0|-|mJ|
|Turn-off energy|_E_o ff||-|2.2|-||
|Total switchingenergy|_E_t s||-|4.2|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_rr|_T_j=25C,<br>_V_R=600V, _I_F=25A,<br>_di_F_/dt_=800A/s|-|200|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.3||µC|
|Diodepeak reverse recoverycurrent|_I_rr m||-|21||A|
|Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|390|-|A/s|
> 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
> 2) Leakage inductance _L_ and Stray capacity _C_ due to dynamic test circuit in Figure E.
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**TrenchStop[®]** Series
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|**Switching Characteristic, Inductive**|**Load,**at_T_j=150C|**Load,**at_T_j=150C|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=150C<br>_V_C C=600V,_I_C=25A,<br>_V_G E=0/15V,<br>_R_G= 22,<br>_L_<br>_1 )_=180nH,<br>_C_<br>_1)_=39pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|50|-|ns|
|Rise time|_t_r||-|32|-||
|Turn-off delaytime|_t_d( of f)||-|660|-||
|Fall time|_t_f||-|130|-||
|Turn-on energy|_E_o n||-|3.0|-|mJ|
|Turn-off energy|_E_o ff||-|4.0|-||
|Total switchingenergy|_E_t s||-|7.0|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_rr|_T_j=150C<br>_V_R=600V, _I_F=25A,<br>_di_F_/dt_=800A/s|-|320|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|5.2|-|µC|
|Diodepeak reverse recoverycurrent|_I_rr m||-|29|-|A|
|Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|320||A/s|
> 1) Leakage inductance _L_ and Stray capacity _C_ due to dynamic test circuit in Figure E.
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**TrenchStop[®]** Series
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**----- Start of picture text -----**<br>
t p=3µs<br>70A<br>60A 10µs<br>T C =80°C<br>10A<br>50A<br>50µs<br>40A T C =110°C<br>150µs<br>30A<br>1A<br>Ic 500µs<br>20A<br>10A Ic 20ms<br>DC<br>0A 0,1A<br>10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V<br>f , SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>I C, I C,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 1. Collector current as a function of<br>switching frequency<br>( T j 150C, D = 0.5, V CE = 600V,<br>V GE = 0/+15V, R G = 22)<br>**----- End of picture text -----**<br>
**Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25C, _T_ j 150C; _V_ GE=15V)
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150W<br>100W<br>50W<br>0W<br>25°C 50°C 75°C 100°C 125°C<br>T C, CASE TEMPERATURE<br>Figure 3. Power dissipation as a function of<br>case temperature<br>( T j 150C)<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
40A<br>30A<br>20A<br>10A<br>0A<br>25°C 75°C 125°C<br>T C, CASE TEMPERATURE<br>COLLECTOR CURRENT<br>I C,<br>**----- End of picture text -----**<br>
**Figure 4. Collector current as a function of case temperature** ( _V_ GE 15V, _T_ j 150C)
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## **TrenchStop[®]** Series
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**----- Start of picture text -----**<br>
70A 70A<br>60A 60A<br>V =17V V =17V<br>GE GE<br>50A 15V 50A 15V<br>13V 13V<br>40A 40A<br>11V 11V<br>9V 9V<br>30A 30A<br>7V 7V<br>20A 20A<br>10A 10A<br>0A 0A<br>0V 1V 2V 3V 4V 5V 6V 0V 1V 2V 3V 4V 5V 6V<br>V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j = 25°C) ( T j = 150°C)<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>I C, I C,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
70A<br>3,0V<br>60A IC =50A<br>2,5V<br>50A<br>2,0V<br>40A IC =25A<br>30A 1,5V<br>IC =15A<br>20A 1,0V I C =8A<br>10A T J=150°C 0,5V<br>25°C<br>0A 0,0V<br>0V 2V 4V 6V 8V 10V 12V -50°C 0°C 50°C 100°C<br>V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter<br>(VCE=20V) saturation voltage as a function of<br>junction temperature<br>( V GE = 15V)<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR CURRENT<br>I C,<br> COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
t d(off) t d(off)<br>100ns t f 100 ns t f<br>t<br>d(on)<br>t d(on) t r<br>10ns 10 ns<br>t r<br>1ns 1 ns<br>0A 10A 20A 30A 40A <br>IC , COLLECTOR CURRENT R G, GATE RESISTOR<br>SWITCHING TIMES SWITCHING TIMES<br>t, t,<br>**----- End of picture text -----**<br>
- **Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=150°C, _V_ CE=600V, VGE=0/15V, _R_ G=22Ω, Dynamic test circuit in Figure E)
**Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J=150°C, _V_ CE=600V, VGE=0/15V, _I_ C=25A, Dynamic test circuit in Figure E)
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**----- Start of picture text -----**<br>
t d(off) 7V<br>6V<br>5V max.<br>100ns typ.<br>4V<br>t f min.<br>3V<br>t<br>d(on)<br>2V<br>t r<br>1V<br>10ns 0V<br>0°C 50°C 100°C 150°C -50°C 0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE T J, JUNCTION TEMPERATURE<br>EMITT TRSHOLD VOLTAGE<br>SWITCHING TIMES -<br>t,<br> GATEGE(th ) ,<br>V<br>**----- End of picture text -----**<br>
**Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=25A, _R_ G=22Ω, Dynamic test circuit in Figure E)
**Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 1.0mA)
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**TrenchStop[®]** Series
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**----- Start of picture text -----**<br>
*) E on and E ts include losses *) E on and E ts include losses<br>due to diode recovery due to diode recovery<br>14,0mJ<br>8 mJ<br>12,0mJ E ts*<br>10,0mJ<br>6 mJ<br>8,0mJ<br>E off<br>6,0mJ E ts* 4 mJ E on *<br>4,0mJ<br>E off 2 mJ<br>2,0mJ<br>E on *<br>0,0mJ 0 mJ<br>10A 20A 30A 40A <br>IC , COLLECTOR CURRENT R G, GATE RESISTOR<br>Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses<br>as a function of collector current as a function of gate resistor<br>(inductive load, T J=150°C, (inductive load, T J=150°C,<br>V CE=600V, VGE=0/15V, R G=22Ω, V CE=600V, VGE=0/15V, I C=25A,<br>Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)<br>7mJ *)) E on and E ts include losses *) E on and E ts include losses<br>due to diode recovery 10mJ due to diode recovery<br>9mJ<br>6mJ<br>8mJ<br>5mJ<br>7mJ<br>4mJ 6mJ<br>E ts** 5mJ<br>3mJ 4mJ E ts*<br>E off<br>2mJ 3mJ<br>E on** 2mJ E off<br>1mJ *<br>1mJ E on<br>0mJ 0mJ<br>50°C 100°C 150°C 400V 500V 600V 700V 800V<br>SWITCHING ENERGY LOSSES SWITCHING ENERGY LOSSES<br>E , E ,<br>SWITCHING ENERGY LOSSES SWITCHING ENERGY LOSSES<br>E , E ,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
7mJ *)) E on and E ts include losses<br>due to diode recovery<br>6mJ<br>5mJ<br>4mJ<br>E ts**<br>3mJ<br>E off<br>2mJ<br>E on**<br>1mJ<br>0mJ<br>50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br>SWITCHING ENERGY LOSSES<br>E ,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
VCE , COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>
**Figure 15. Typical switching energy losses as a function of junction temperature**
**Figure 16. Typical switching energy losses as a function of collector emitter voltage**
- (inductive load, _T_ J=150°C,
- (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=25A, _R_ G=22Ω, Dynamic test circuit in Figure E)
- VGE=0/15V, _I_ C=25A, _R_ G=22Ω, Dynamic test circuit in Figure E)
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**TrenchStop[®]** Series
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**----- Start of picture text -----**<br>
15V<br>240V 960V<br>10V<br>5V<br>0V<br>0nC 50nC 100nC 150nC 200nC<br>Q GE, GATE CHARGE<br>EMITTER VOLTAGE<br>-<br>GATE<br>GE,<br>V<br>**----- End of picture text -----**<br>
**Figure 17. Typical gate charge** ( _I_ C=25 A)
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**----- Start of picture text -----**<br>
15µs<br>10µs<br>5µs<br>0µs<br>12V 14V 16V<br>V GE, GATE-EMITTETR VOLTAGE<br>SHORT CIRCUIT WITHSTAND TIME<br>t SC,<br>**----- End of picture text -----**<br>
**Figure 19. Short circuit withstand time as a function of gate-emitter voltage** ( _V_ CE=600V _,_ start at _T_ J _=_ 25°C _)_
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**----- Start of picture text -----**<br>
C iss<br>1nF<br>100pF C oss<br>C rss<br>10pF<br>0V 10V 20V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>
**Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz)
**==> picture [232 x 232] intentionally omitted <==**
**----- Start of picture text -----**<br>
200A<br>150A<br>100A<br>50A<br>0A<br>12V 14V 16V 18V<br>V GE, GATE-EMITTETR VOLTAGE<br>COLLECTOR CURRENT<br>, short circuit<br>I C(sc)<br>**----- End of picture text -----**<br>
**Figure 20. Typical short circuit collector current as a function of gateemitter voltage** ( _V_ CE 600V, _T_ j 150C)
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## **TrenchStop[®]** Series
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**----- Start of picture text -----**<br>
V<br>CE<br>600V 60A 60A 600V<br>400V 40A 40A 400V<br>I<br>C<br>200V 20A 20A 200V<br>I C V CE<br>0V 0A 0A 0V<br>0us 0.5us 1us 1.5us 0us 0.5us 1us 1.5us<br>t , TIME t , TIME<br>EMITTER VOLTAGE<br>-<br>COLLECTOR CURRENT<br>COLLECTOR I C,<br>CE,<br>V<br>**----- End of picture text -----**<br>
**Figure 21. Typical turn on behavior** (VGE=0/15V, _R_ G=22Ω, _T_ j = 150C, Dynamic test circuit in Figure E)
**Figure 22. Typical turn off behavior**
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**----- Start of picture text -----**<br>
(VGE=15/0V, R G=22Ω, T j = 150C,<br>Dynamic test circuit in Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
D =0.5<br>0.2<br>10-1K/W 0.1<br>0.05<br>0.02 R , ( K / W ) , ( s )<br>0.01 0.229 1.10*10 [-1]<br>-2 0.192 1.56*10 [-2]<br>10 K/W single pulse 0.174 1.35*10 [-3]<br>0.055 1.52*10 [-4]<br>R 1 R 2<br>C 1 =1 / R 1 C 2 =2 / R 2<br>10-3K/W<br>10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH<br>TRANSIENT THERMAL RESISTANCE<br>thJC,<br>Z<br>**----- End of picture text -----**<br>
**Figure 23. IGBT transient thermal resistance** ( _D = t_ p / _T_ )
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**----- Start of picture text -----**<br>
100K/W<br>D =0.5<br>0.2<br>0.1<br>10-1K/W 0 R .2 , 8 ( K / W 2 ) 1. 01*1 , ( s 0 [-1] )<br>0.05<br>0.317 1.15*10 [-2]<br>0.294 1.30*10 [-3]<br>0.107 1.53*10 [-4]<br>0.02<br>R 1 R 2<br>0.01<br>single pulse<br>C 1 =1 / R 1 C 2 =2 / R 2<br>10-2K/W<br>10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH<br>TRANSIENT THERMAL RESISTANCE<br>thJC,<br>Z<br>**----- End of picture text -----**<br>
**Figure 24. Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ P/ _T_ )
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**----- Start of picture text -----**<br>
500ns 5µC T J =150°C<br>400ns 4µC<br>300ns 3µC<br>200ns T J =150 ° C 2µC T =25°C<br>J<br>100ns T J =25°C 1µC<br>0ns 0µC<br>400A/µs 600A/µs 800A/µs 1000A/µs 400A/µs 600A/µs 800A/µs 1000A/µs<br>di F /dt , DIODE CURRENT SLOPE di F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY TIME<br>t rr, REVERSE RECOVERY CHARGErr,<br>Q<br>**----- End of picture text -----**<br>
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Figure 23. Typical reverse recovery time as<br>a function of diode current slope<br>( V R=600V, I F=25A,<br>Dynamic test circuit in Figure E)<br>**----- End of picture text -----**<br>
**Figure 24. Typical reverse recovery charge as a function of diode current slope** ( _V_ R=600V, _I_ F=25A, Dynamic test circuit in Figure E)
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30A T J =150 ° C<br>25A<br>T =25°C<br>20A J<br>15A<br>10A<br>5A<br>0A<br>400A/µs 600A/µs 800A/µs 1000A/µs<br>di F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY CURRENT<br>I rr,<br>**----- End of picture text -----**<br>
**Figure 25. Typical reverse recovery current as a function of diode current slope** ( _V_ R=600V, _I_ F=25A, Dynamic test circuit in Figure E)
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T =25°C<br>-400A/µs J<br>T =150°C<br>J<br>-300A/µs<br>-200A/µs<br>-100A/µs<br>-0A/µs<br>400A/µs 600A/µs 800A/µs 1000A/µs<br>di F /dt , DIODE CURRENT SLOPE<br>DIODE PEAK RATE OF FALL<br>/dt ,<br>rr<br>di OF REVERSE RECOVERY CURRENT<br>**----- End of picture text -----**<br>
**Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** ( _V_ R=600V, _I_ F=25A, Dynamic test circuit in Figure E)
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IKW25T120
**TrenchStop[®]** Series
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TJ =25°C<br>60A 150°C<br>40A<br>20A<br>0A<br>0V 1V 2V<br>V F, FORWARD VOLTAGE<br>FORWARD CURRENT<br>I F,<br>**----- End of picture text -----**<br>
**Figure 27. Typical diode forward current as a function of forward voltage**
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2,0V<br>IF =50A<br>25A<br>1,5V<br>15A<br>8A<br>1,0V<br>0,5V<br>0,0V<br>-50°C 0°C 50°C 100°C<br>T J, JUNCTION TEMPERATURE<br>FORWARD VOLTAGE<br>F,<br>V<br>**----- End of picture text -----**<br>
**Figure 28. Typical diode forward voltage as a function of junction temperature**
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IKW25T120
## **TrenchStop[®]** Series
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IKW25T120
## **TrenchStop[®]** Series
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__ a -_ ~<br>Figure A. Definition of switching times<br>**----- End of picture text -----**<br>
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i,v<br>di F /dt t r r =t S + t F<br>Q r r =Q S + Q F<br>t<br>r r<br>I F — t S se t F<br>I Q S Q F 10% I r r m t<br>r r m 90% I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>1 2 n<br>r1 r 2 r n<br>Tj (t)<br>{} {} {}<br>p(t) r1 r 2 r n<br>,<br>'o<br>TC<br>**----- End of picture text -----**<br>
**Figure D. Thermal equivalent circuit**
**Figure B. Definition of switching losses**
**Figure E. Dynamic test circuit** Leakage inductance _L_ =180nH and Stray capacity _C_ =39pF.
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IKW25T120
**TrenchStop[®]** Series
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**Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.**
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ) **.**
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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