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IKW25N120H3FKSA1
IGBT, 25 A, 2.4 V, 326 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pi
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 326W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 25A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.4V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.2 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## IGBT
IKW25N120H3
IKW25N120H3
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Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>* low EMI<br>* Very soft, fast recovery anti-parallel diode<br>G<br>* maximum junction temperature 175°C<br>E<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/ &<br>Applications:<br>* uninterruptible power supplies , =<br>* welding converters ‘A<br>* converters with high switching frequency<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW25N120H3|1200V|25A|2.05V|175°C|K25H1203|PG-TO247-3|
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IKW25N120H3
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## High�speed�switching�series�third�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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Rev.�2.1,��2014-12-01
IKW25N120H3
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## High�speed�switching�series�third�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||50.0<br>25.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||100.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||100.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||25.0<br>12.5|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||100.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||326.0<br>156.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.46|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||1.49|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|
Rev.�2.1,��2014-12-01
4
IKW25N120H3
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## High�speed�switching�series�third�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=25.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|2.05<br>2.50<br>2.70|2.40<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=12.5A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.80<br>1.85|2.35<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=25.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|2.40<br>2.60<br>2.60|3.05<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.85mA,_V_CE=_V_GE|5.0|5.8|6.5|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|250.0<br>2500.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|600|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=25.0A|-|13.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1430|-|pF|
|Output capacitance|_C_oes||-|115|-||
|Reverse transfer capacitance|_C_res||-|75|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=25.0A,<br>_V_GE=15V|-|115.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤600V,<br>_t_SC≤10µs<br>_T_vj=175°C|-|87|-|A|
Rev.�2.1,��2014-12-01
5
IKW25N120H3
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## High�speed�switching�series�third�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=80nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|41|-|ns|
|Turn-off delaytime|_t_d(off)||-|277|-|ns|
|Fall time|_t_f||-|17|-|ns|
|Turn-on energy|_E_on||-|1.80|-|mJ|
|Turn-off energy|_E_off||-|0.85|-|mJ|
|Total switchingenergy|_E_ts||-|2.65|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=25.0A,<br>_di_F_/dt_=500A/µs|-|290|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.20|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-150|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=80nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|26|-|ns|
|Rise time|_t_r||-|35|-|ns|
|Turn-off delaytime|_t_d(off)||-|347|-|ns|
|Fall time|_t_f||-|50|-|ns|
|Turn-on energy|_E_on||-|2.60|-|mJ|
|Turn-off energy|_E_off||-|1.70|-|mJ|
|Total switchingenergy|_E_ts||-|4.30|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=25.0A,<br>_di_F_/dt_=500A/µs|-|505|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.75|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-85|-|A/µs|
6
Rev.�2.1,��2014-12-01
IKW25N120H3
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110<br>100 AI \ Le CA 100 LI ee See ees ee r<br>Nt IT ETT<br>90<br>CUNTi ll SERBS SSSR<br>2 80 N UN tp=1µs<br>| A ieoolll 2 iRet<br>Zz 70 CNG WITT eee 10µs cre<br>10<br>x \ | ee 50µs<br>phd2O 60 >NUN \ \ 2x2 ——PEeT. aies<br>100µs<br>x \ \ Y yA O Pere A WE<br>O 50 x ‘ NaN x = 200µs eS<br>e 40 COUINNCANT\ Nr Soiy O_ LT 500µs<br>_ TT) 6 oo ee<br>1 DC<br>:© 30 TC=80° TUSTINSN iN \TTT aLeMs<br>TC=110°<br>20 T tHAN| TI | ES<br>TC=80°<br>10 | COEAN. \ \N |||] erPt TT TEa<br>TC=110° IENa A<br>SSS<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =600V, V GE=15/0V,<br>r G=23 Ω )<br>350 50<br>300<br>40<br>250<br>= oe<br>30<br>x 200 \ a<br>2) oc<br>Oo fe)<br>150<br>i ‘ : 20<br>= am<br>Pio<br>100<br>N |<br>10<br>SooeeNee<br>50<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ j ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C)
7
IKW25N120H3
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100 100<br>VGE=20V VGE=20V<br>Ay e ee aia<br>80 17V 80 17V<br>15V 15V<br>mene) eeeee<br>13V 13V<br>60 11V 60 11V<br>9V 9V<br>7V rs FSN 7V eS<br>40 40<br>5V 5V<br>20 20<br>aAN S Zee<br>P F N<br>0 0<br>| LA<br>0 2 4 6 0 2 4 6 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>I C I C<br>**----- End of picture text -----**<br>
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75 5.0<br>Tj=25°C IC=12.5A<br>Tj=175°C IC=25A<br>Ere 4.5 IC=50A<br>60<br>4.0<br>ze || ify |<br>oe ee<br>3.5<br>Se 45 yp 3.0 ee<br>30<br>ee ee ey 2.5<br>ee eeeeee = ee<br>2.0<br>SASS a eS<br>15<br>fo ee a ee © 1.5 ee| |<br>0 P a ots|a | | 1.0 PTT TPT<br>5 10 15 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=20V) transfer characteristic wypica on of of junction tonpersture voltage as<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
> Figure 8. wypica on of of junction tonpersture voltage as ( _V_ GE=15V)
8
IKW25N120H3
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1000 SS 1000 A<br>jp P| | td(off) i eee eee eee | td(off) ee ee<br>tf tf<br>| td(on) 2 ee ee ee | td(on) ee ee<br>A || tr Pf}i | I tr p f}f of| | | er<br>Pe eee [ a]<br>| | | eet | Pf p ep}| eetT tt| dT | |<br>op)Wwei] ittti tyeWwop) feet eee<br>FF<br>g 100 a a g 100 A A<br>= a a A<br>rs) a aee aee<br>Ee a es ee ee aeeeeee eee e e ee<br>= a a ee eee pi | | | | | | ee ee<br>Of | |e| | tleeee| BeeP| | epee TTT|<br>pereyrereyV4 LaerEE<br>7 /<br>/<br>10 10<br>5 15 25 35 45 5 15 25 35 45 55 65<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =175°C, V CE =600V, V GE=15/0V, (ind. load, T j =175°C, V CE =600V, V GE=15/0V,<br>r G=23 , test circuit in Fig. E) I C =25A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
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1000 a 7<br>| | td(off) aesee eee typ.<br>tf<br>e | ttd(on)r PPt (gl ee ||<br>6<br>_ aE p — oQ PS<br>e f aN<br>5<br>=F Ww7) ys “TS,<br>100<br>g OE TSK<br>= po ~S<br>rs) a x 4<br>E a es<br>= po | | PE<br>et}<br>3<br>10 2<br>0 25 50 75 100 125 150 175 0 25 50 75<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION<br>Figure 11. Typical switching times as a function of Figure 12. Gate-emitter threshold<br>junction temperature of junction temperature<br>(ind. load, V CE =600V, V GE =15/0V, I C=25A, ( I C=0.85mA)=0.85mA)<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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typ.<br>min.<br>ee max.<br>||<br>6 PS<br>5<br>ys “TS, TSK NN— se_<br>~S<br>4 IN<br>= ~<br>—_<br>S<br>3<br>2<br>0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>**----- End of picture text -----**<br>
( _I_ C=0.85mA)=0.85mA)
_r_ G=23
9
IKW25N120H3
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12 7<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>6<br>10<br>oy{ t orr oy<br>Ww r aye/ Ww 5 | pf[ope<br>7)ee:oo 8 / 7)<br>i<br>aa) uc<br>aa)ya ee ; 7 > 4 Eence<br>oreee’ , or ead -<br>Ww 6 é Ww -<br>Zz / Zz ue<br>Gof |a 3 a<br>Zz a Zz ude<br>oO 4 ra 7 oO To<br>Per ye 2 pep<br>Se* Paer | Bo e<br>2 lL eT] *<br>Leger] 1<br>0 0<br>eT | tT |tt| | ||<br>5 15 25 35 45 5 15 25 35 45 55 65<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =175°C, V CE =600V, V GE=15/0V, (ind. load, T j =175°C, V CE =600V, V GE=15/0V,<br>r G=23 , test circuit in Fig. E) I C =25A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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6<br>Eoff Eoff<br>Eon Eon<br>4 Ets Ets<br>5<br>7)ep) 3 7)ep) 4 aw<br>—! —! aa<br>> {1 > wee<br>O = O aa<br>Ww Ww 3 > ><br>z z - o<br>Ww 2 i ue<br>s | s 2 aa —<br>oe3 1 ae 3 —-<br>1<br>ee<br>0 0<br>0 25 50 75 100 125 150 175 400 500 600 700 800<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =600V, V GE =15/0V, I C=25A, (ind. load, T j =175°C, V GE =15/0V, I C=25A,<br>r G=23 , test circuit in Fig. E) r G=23 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
10
~~High speed switching series third generation~~ IKW25N120H3
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16<br>240V<br>960V<br>14<br>TS 12 Eqa nes) ify/ ‘ 1000 a — ———<br>=. ; a ee Cies ee<br>) / _ a Coes ||<br>Cres<br>O 10 Ww tae<br>; 2<br>8<br>100<br>py<br>uw 6 Oo pf<br>0) ee ee<br>Ee° 4 Ft fo} fo} oy _ aee<br>2 Po<br>0 10<br>0 20 40 60 80 100 120 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=25A)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
> Figure 18. Typical
> ( soe _V_ GE
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180 ee ee ee 50<br>7< 160 | | || | 40<br>e 140 | |eeYdee<br>=<br>120<br>S | | |fii z 30<br>Gg fo 1 7 | | g<br>100<br>a | ooYE<br>ey<br>20<br>Ss 80 ee =<br>5 | | 7<br>ep 60 fo Z)| | 6<br>10<br>a | Aif |ee|ee<br>en 40 ae ee<br>|—<br>20 0<br>10 12 14 16 18 10 12 14 16 18 20<br>V GE ,GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 19. Typical short circuit collector current as a Figure 20. Short circuit withstand time as a function<br>( fu V CE netof gate-emitter voltage T j=25°C) ( Bate V CE oO eee T j 150°C)<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
11
IKW25N120H3
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1 HH PUTT TTT TUTTI TTI UTI ETT<br>| PT PT IILCA<br>1<br>il<br>ill LA, D=0.5 (_ no D=0.5<br>Zye 0.2 8 EHH 0.2 tH<br>in 0.1 PProaIa eTee 0.1 il a2 PUMeaTZ TTT 0.1 I<br>o ete 0.05 HHH Et | ea ii 0.05<br>= SSeS / oe o Wy WLU<br>Sa at 0.02 i ey = 0.1 nil WHA ee antiil 0.02<br>0.01 0.01<br>single pulse single pulse<br>za meni | Bett 7 ar (7/.0P es<br>- AeA E PITTY ear EIN<br>Ge 0.01 alll<br>D eTTN 0.01 TTTEEA<br>Z SECer aeCe re ~- Ti 7)Z IASe LAIee EU R, Re-- Ti<br>n Cy=14/Ry Co=fo/Ro n Cy=14/Ry Co=f2/Ro<br>EER He |A i<br>| Hi cer TE TT il a a ee |<br> LT A i: 1 2 3 4 5 | 7 TTI | pel i: 1 2 3 4 5<br>ri[K/W]: 0.08133 0.09366 0.22305 0.05925 5.7E-3 ri[K/W]: 0.3921 0.5592 0.4557 0.077415 9.0E-3<br>τ i[s]: 2.6E-4 1.7E-3 0.01009673 0.0336145 0.2730749 τ i[s]: 2.5E-4 1.6E-3 9.0E-3 0.03875911 0.2738223<br> ———— | a | |_<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance Figure 22. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>
Figure 22. Diode function ( _D_ = _t_ p/T)
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700 | |<br>Tj=25°C, IF = 25A Tj=25°C, IF = 25A<br>Tj=175°C, IF = 25A Tj=175°C, IF = 25A<br>3<br>Oo<br>= 600 x =<br>Ww - O a<br>= _<br>=\ Ss<br>500<br>2<br>im ae a<br>oO ee (e)<br>WW > O<br>: 400 ef] PPL : ELE ELE<br>é a<br>: "f 1 S aasTT<br>thoc ifi a tT |<br>. 300 LL iad<br>200 0<br>200 400 600 800 1000 1200 1400 1600 200 600 1000 1400 1800<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 23.
( _V_ R=600V)
Figure 24.
( _V_ R=600V)
12
IKW25N120H3
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18 es a 0 es<br>Tj=25°C, IF = 25A Tj=25°C, IF = 25A<br>Tj=175°C, IF = 25A Tj=175°C, IF = 25A<br>16<br>-_ a“ = ™~,<br>-100<br>14<br>g Z I| = \ ~<br>12<br>“w a rd PL S<br>v ra ‘ 2 -200 NN<br>O /x<br>i 10<br>oe)ow f / Z| %o |<br>: / .<br>8 so)<br>>i [.] -300<br>|<br>uw T y : in<br>6<br>4 -400 LLL EEL.<br>200 600 1000 1400 1800 200 600 1000 1400 1800<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 25. Typical reverse recovery current as a Figure 26. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=600V) current slope<br>( V R=600V)<br>120 4.0<br>Tj=25°C IF=6.25A<br>Tj=175°C IF=12.5A<br>IF=25A<br>ae<br>100 3.5<br>= 80 uw 3.0<br>Z / |<br>WW / <x<br>fe 60 7 Q<x 2.5<br>zt / v4<br>==<br>&<br>VA<br>e) 40 © 2.0<br>20 1.5<br>Enveae PEt<br>0 1.0<br>0 1 2 3 4 5 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br>
Figure 27.
Figure 28.
13
IKW25N120H3
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High�speed�switching�series�third�generation
## PG-TO247-3
14
Rev.�2.1,��2014-12-01
IKW25N120H3
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High�speed�switching�series�third�generation
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**----- Start of picture text -----**<br>
v GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
v GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>v CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt a b<br>a b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>t<br>**----- End of picture text -----**<br>
Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Ls, relief capacitor C ,r (only for ZVT switching)
15
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IKW25N120H3
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## High speed switching series third generation
## Revision History
## IKW25N120H3
Revision: 2014-12-01, Rev. 2.1
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2009-11-27|-|
|1.2|2010-02-10|-|
|2.1|2014-12-01|Final data sheet|
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## Information
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## Warnings
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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1, 2014-12-01
16
Updated at June 9, 2026
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