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IKW20N65ET7XKSA1
IGBT, 40 A, 1.35 V, 136 W, 650 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 136W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.35 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IKW20N65ET7 ## TRENCHSTOP[TM] **==> picture [469 x 255] intentionally omitted <==** **----- Start of picture text -----**<br> Features: C<br>TRENCHSTOP [TM] IGBT 7 technology offering<br>« Very low V CEsat<br>¢ Low turn-off losses<br>¢ Short tail current<br>G<br>¢ Reduced EMI<br>E<br>* Humidity robust design<br>* Very soft, fast recovery anti-parallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant 2<br>* Complete product spectrum and PSpice Models: i,<br>http://www.infineon.com/igbt7/<br>Applications:<br>y<br>* Drives<br>-Servo<br>-GPD<br>¢ Industrial Power Supplies G<br>-Industrial UPS C<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKW20N65ET7|650V|20A|1.35V|175°C|K20EET7|PG-TO247-3| V 2. 3 2020- 11 - 11 Datasheet www.infineon.com IKW20N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 2 V�2. 3 2020- 11 - 11 Datasheet IKW20N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||40.0<br>27.5|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||60.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs2)|-||60.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||40.0<br>27.5|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||60.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤330V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=100°C|_t_SC||5|µs| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||136.0<br>68.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.10|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.40|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Defined by design. Not subject to production test. > 2) Clamped inductive load current test for each device, IC=60A, VCC=400V, Tc=25°C, VGE=20V, L=80µH, RG=10 Ω . 3 V�2. 3 2020- 11 - 11 Datasheet IKW20N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.50<br>1.60|1.65<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.60<br>1.55|2.00<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.20mA,_V_CE=_V_GE|4.3|5.0|5.7|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>700|40<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|10.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|1310|-|pF| |Output capacitance|_C_oes||-|42|-|| |Reverse transfer capacitance|_C_res||-|13|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=20.0A,<br>_V_GE=15V|-|128.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| |Short circuit collector current1)<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤3µs<br>_T_vj=150°C|-|110|-|A| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns| |Rise time|_t_r||-|10|-|ns| |Turn-off delaytime|_t_d(off)||-|210|-|ns| |Fall time|_t_f||-|20|-|ns| |Turn-on energy|_E_on||-|0.36|-|mJ| |Turn-off energy|_E_off||-|0.36|-|mJ| |Total switchingenergy|_E_ts||-|0.72|-|mJ| 1) Allowed number of short circuits: <1000; time between short circuits >1s. V�2. 3 2020- 11 - 11 Datasheet 4 IKW20N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|15|-|ns| |---|---|---|---|---|---|---| |Rise time|_t_r||-|6|-|ns| |Turn-off delaytime|_t_d(off)||-|235|-|ns| |Fall time|_t_f||-|18|-|ns| |Turn-on energy|_E_on||-|0.16|-|mJ| |Turn-off energy|_E_off||-|0.21|-|mJ| |Total switchingenergy|_E_ts||-|0.37|-|mJ| |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1420A/µs|-|70|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.44|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|13.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-210|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1800A/µs|-|42|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.28|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|14.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-420|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns| |Rise time|_t_r||-|12|-|ns| |Turn-off delaytime|_t_d(off)||-|255|-|ns| |Fall time|_t_f||-|75|-|ns| |Turn-on energy|_E_on||-|0.58|-|mJ| |Turn-off energy|_E_off||-|0.65|-|mJ| |Total switchingenergy|_E_ts||-|1.23|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=32nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|15|-|ns| |Rise time|_t_r||-|7|-|ns| |Turn-off delaytime|_t_d(off)||-|310|-|ns| |Fall time|_t_f||-|80|-|ns| |Turn-on energy|_E_on||-|0.30|-|mJ| |Turn-off energy|_E_off||-|0.38|-|mJ| |Total switchingenergy|_E_ts||-|0.68|-|mJ| V�2. 3 2020- 11 - 11 Datasheet 5 IKW20N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1420A/µs|-|120|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|1.18|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|19.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-180|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1450A/µs|-|88|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.85|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|20.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-265|-|A/µs| 6 V�2. 2020- 11 - Datasheet IKW20N65ET7 ## ~~net~~ TRENCHSTOP[TM] **==> picture [474 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 150 45<br>40<br>ToT<br>120<br>35<br>S EE<br>30<br>90<br>25<br>: ppof XONO<br>20<br>: S CoC NT<br>60<br>15<br>Jeena<br>ee eee<br>10<br>30<br>5 ef | |py<br>0 0 et | |Tl<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>60 60<br>VGE=20V VGE=20V<br>18V 18V<br>a a<br>50 15V 50 15V<br>12V 12V<br>40 Van 10V 40 Sy 10V 2<br>8V 8V<br>7V 7V<br>30 30<br>6V 6V<br>&<br>WE 5V We 5V<br>1 20 20<br>i anne<br>10 10<br>p . — | f.-—<br>Ag AS<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Typical ( _T_ vj=25°C) Figure 4. Typical ( _T_ vj=175°C) 3 2020- 11 - 11 Datasheet 7 IKW20N65ET7 ## TRENCHSTOP[TM] **==> picture [248 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>Tj=25°C /<br>Tj=175°C /<br>/<br>/<br>50<br>Zz<br>fe)<br>x<br>2 40 // e<br>oe :<br>5 / w<br>re) / Ww<br>w 30 / / E<br>uw ow<br>8 20 rt<br>(e)<br>oO } aOO<br>10 y}<br>0<br>2 4 6 8 10 12 14<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br> **==> picture [248 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>IC=10A<br>IC=20A<br>IC=40A<br>S 3.0<br>Zz<br>fe)<br>© 2.5<br>e a<br>: 2.0<br>w<br>Ww<br>E<br>1.5<br>ow<br>rt<br>1.0<br>(e)<br>aOO a a<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 6. Figure 5. Typical ( _V_ CE=20V) ( _V_ GE=15V) **==> picture [471 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a<br>ia es td(off) po ee ee ee td(off)<br>tf 1000 tf<br>td(on) td(on)<br>PT tr rr H tr ——————<br>[a pi ee<br>100<br>icp), aaSSeSaes icp)eg Tt<br>~ a es el el ~ 100 a<br>= eeee ee A= ——— oe<br>Q eeee ee ee ee<br>=<br>e<br>E ESR en >+ ciel ee en eee<br>= = ~<br>2) 10 a 2) on<br>. . 10 [_<br>a ss se ee<br>a es es ee ee<br>ee ee ee ee ee a<br>1 1<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=12 Ω , Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 8 V 2. 3 2020- 11 - 11 IKW20N65ET7 ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 DE arsa Rs 6<br>| 1 td(off) aaee ee typ.<br>I tf<br>I td(on) a eeee ee ee eee _<br>tr<br>| ee 5<br>p o WW<br>e ee<br>_!<br>oO<br>iF 100 a es Q 4<br>icp) a _<br>uw aaehee ee ee (e)<br>= a es ee ee oO<br>- a eed ee ee Wy<br>Oo= = a- eeee = 3<br>: a ee e<br>= La<br>10 2<br>2)7lalateatile =<br>aa aee Ww<br>a x<br>a es eo)<br>fs es 1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 9. Figure 10. **==> picture [490 x 386] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, V CE =400V, V GE=15/0V, ( I C=0.2mA)<br>I C =20A, r G=12 , Dynamic test circuit in<br>Figure E)<br>5.0 4.0<br>Eoff Eoff<br>4.5 Eon Eon<br>Ets 7 3.5 Ets<br>ao 7 ¢<br>fr =n 4.0 it| // rm)A.E 3.0 v / /¢<br>Lu 3.5 Ly Ww Y/Y<br>fo) / fo) 2.5 ¢<br>aa 3.0 / a a<br>> / va “<br>2 a / i “<br>2.5 2.0<br>im ; im - “<br>iT Y / a wo“ a<br>Y) 2.0 c / Y) “ a 7<br>1.5<br>an= 7 y 77 Zzan , ? “ a > |<br>1.5<br>nn 1.0<br>S /eM em | a<br>1.0 an —_<br>77 7<br>0.5<br>Loe a<br>0.5<br>4 Yo-<br>0.0 0.0<br>art LE<br>0 10 20 30 40 50 60 0 30 60 90 120 150<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=12 Ω , Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 9 V2. 3 2020- 11 - 11 IKW20N65ET7 ## TRENCHSTOP[TM] **==> picture [474 x 341] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4 1.6<br>Eoff Eoff<br>Eon Eon<br>Ets 1.4 | Ets 7oo<br>1.2<br>1.2<br>-* ?<br>Ww 1.0 -* Lu ?<br>7) - 7) 7<br>2p) Prom 2p) o<br>1.0<br>—! _" —! a<br>> 0.8 > > y<br>O “7 O o<br>0.8<br>0.6 7<br>Saye a<br>0.6<br>=| | ee<br>:<br>0.4<br>= a 22 eeaee<br>0.4<br>ep)-a ep)= i —><br>0.2<br>0.2<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =175°C, V GE=15/0V,<br>I C =20A, r G=12 , Dynamic test circuit in I C =20A, r G=12 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [471 x 313] intentionally omitted <==** **----- Start of picture text -----**<br> 16 1E+4<br>130V520V / | I CCiesoes poa<br>= H eT<br>14 I Cres ee<br>/ ee ee<br> ; A c e se<br>= 12 J / 1000 a| a<br>oO — Ea<br><x LL P s<br>F 10 / esee<br>Pf | L 7Y lsgguw S a SS<br>ow 1<br>a 8 oe I 100 M<br>kK S) e S<br>= <x ee ee eee<br>Ww oa Pp Nf [Ee]<br>Ww 6 O pNP ee<br>. 4 10 ee ee ee<br>a esse<br>po<br>2 a eeee<br>0 1<br>0 20 40 60 80 100 120 140 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=20A) collector-emitter voltage<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> **==> picture [61 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 16.<br>( V GE<br>**----- End of picture text -----**<br> 10 V2. 3 2020- 11 - 11 Datasheet IKW20N65ET7 ## TRENCHSTOP[TM] **==> picture [469 x 313] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>1<br>160<br>E / S ees iN<br>140 D=0.5<br>a / uw HTH ea. CTT<br>of O ER” ol 0.2 IL<br>ELC 0.1 TAT<br>120<br>: ee<br>5 a2 0.1 eeLY I 0.05<br>a a dl<br>0.02<br>wW 100 _ | | Ti OA jit = nit<br>a xt 4 = cI 0.01 0 |<br>e) / S ee ote Ae a<br>© w a Ae att sill single pulse mI<br>80<br>5 VA W a eee II<br>: F eer ee IMU<br>60 a<br>- ge 0.01 UATPU ATIN| LLLMELL<br>5 g Rat Re Til<br>Q ae Atl eat aaa mi<br>40<br>2 ce ACC il<br>. 20 TALFVA | ||) ES AAA/ | Ae i: 1 2 ala 3 4<br>ri[K/W]: 0.2930132 0.3454922 0.3120085 0.04948609<br>τ i[s]: 1.8E-4 2.4E-3 0.01810047 0.1733464<br>0 re} ot tf | 0.001 Yl |<br>8 10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical short circuit collector current as a Figure 18. IGBT transient thermal resistance<br>function of gate-emitter voltage ( D = t p/T)<br>I C(SC) Z c)th(j-<br>**----- End of picture text -----**<br> **==> picture [91 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V CE ≤ 400V, T vj ≤ 150°C)<br>**----- End of picture text -----**<br> **==> picture [235 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>Tj=25°C, IF = 20A<br>Tj=175°C, I — F = 20A<br>_ 200<br>aN<br>.<br>2 .<br>150<br>~<br>fv<br>-<br>100<br>Wi NN<br>NL<br>& —<br>50<br>0<br>600 800 1000 1200 1400 1600 1800<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br> **==> picture [255 x 298] intentionally omitted <==** **----- Start of picture text -----**<br> 1 |<br>EHHreer<br>= et Et<br>x t tt Lae THM<br>ATT CO FA Seco eg D=0.5 Cn<br>eg Hie TT, TT<br>0.2<br>< 7,<br>0.1<br>oD a a<br>Sma Le 0.05 || Il 2<br>0.1<br>0.02<br>ES| aer 0.01 oS<br>Hae single pulse<br>c A} eal yi fv<br>mm te<br>éF 7TAYif\\\| Leen TEEYW Wi<br>ef 0.01 AN<br>000 AN 0<br>SEHA Htil &<br>a)LAZA| |||<br>a THE ETE TT<br>i: 1 2 3 4<br>ee ri[K/W]: 0.177693 0.4215581 0.5251741 0.2755747 |<br>τ i[s]: 4.7E-5 4.5E-4 6.0E-3 0.07805564<br>ll a |<br>0.001<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>Figure 19. Diode transient thermal impedance as a<br>function of pulse width<br>( D = t p/T)<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 20. ( _V_ R=400V) 11 V2. 3 2020- 11 - 11 Datasheet IKW20N65ET7 ## TRENCHSTOP[TM] **==> picture [490 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4 25<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=175°C, IF = 20A Tj=175°C, IF = 20A<br>= | = [|]<br>1.2<br>O<br>3 a <= 20 7 oa<br>Lu -— 5 7<br>O 1.0 uw a<br>ina ia<br>= “<br>O<br>15<br>> 0.8 ><br>> Ss 7<br>WwW pbk<br>0.6<br>cr id 10 ZO<br>2 tp 7<br>o or<br>0.4<br>;°<br>5<br>a<br>0.2<br>0.0 0<br>600 800 1000 1200 1400 1600 1800 600 800 1000 1200 1400 1600 1800<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 60<br>Tj=25°C, IF = 20A Tj=25°C<br>Tj=175°C, IF = 20A Tj=175°C<br>-50 50<br>ry ~.<br>=a<br><x ~\ =<br>x<br>+ -100 kK 40<br>8Z<br>&<br>‘=(o} \ vda<br>2 \ 3 /<br>& -150 NI a 30<br>% %<br>of =<br>S<br>8 -200 6 20<br>5<br>. \ - ]<br>.<br>N<br>\ N kAi]/<br>-250 10<br>\<br>¢<br>a<br>—<_<br>-300 0<br>600 800 1000 1200 1400 1600 1800 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Figure 23. Typical diode peak rate of fall of reverse Figure 24. Typical diode forward current as a function<br>Q rr I rr<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> ( _V_ R=400V) 12 V2. 3 2020- 11 - 11 Datasheet IKW20N65ET7 ## TRENCHSTOP[TM] **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>IF=10A<br>IF=20A<br>IF=40A<br>2.0<br>Ww<br>Oo<br><x<br>Kk> 1.5 _<br>Q<br>x<br>7a= 1.0<br>o<br>i<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 25. 13 V2. 3 2020- 11 - 11 Datasheet IKW20N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Package Drawing PG-TO247-3** **==> picture [277 x 417] intentionally omitted <==** **==> picture [153 x 351] intentionally omitted <==** **==> picture [300 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br> 14 V�2. 3 2020- 11 - 11 Datasheet IKW20N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 15 V�2. 3 2020- 11 - 11 Datasheet IKW20N65ET7 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �IGBT�7 ## **Revision�History** ## IKW20N65ET7 ## **Revision:�2020- 11 - 11 ,�Rev.�2. 3** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2020-05-12|Final data sheet| |2.2|2020-06-29|Increase of forward current ratingat Tc=100°C to 27.5A| |2.3|2020-11-11|Additional short circuit specification| 16 V�2. 3 2020- 11 - 11 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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