Image not available
Illustrative purposes only
IKW15N120T2FKSA1
IGBT, 30 A, 1.7 V, 235 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:235W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of P
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TrenchStop® 2
- Power Dissipation: 235W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.84 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IKW15N120T2 **TrenchStop[®]** 2[nd] generation Series ## Cinfineon Low Loss DuoPack : IGBT in 2[nd] generation **TrenchStop[®]** technology with soft, fast recovery anti-parallel Emitter Controlled Diode - Short circuit withstand time – 10s - Designed for : - Frequency Converters - Uninterrupted Power Supply - **TrenchStop[®]** 2[nd] generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - Easy paralleling capability due to positive temperature coefficient in VCE(sat) C G E g PG-TO-247-3 - Low EMI - Low Gate Charge - Very soft, fast recovery anti-parallel Emitter Controlled HE Diode - Qualified according to JEDEC[1] for target applications - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ |**Maximum Ratings**|||| |---|---|---|---| |**Parameter**|**Symbol**<br>~~-—}--——~~|**Value**<br>~~-—}--——~~|**Unit**| |Collector-emitter voltage|_V_C E<br>~~-—}--——~~|1200<br>~~-—}--——~~|V| |DC collector current (Tj = 150°C)<br>_T_C= 25C<br>_T_C= 110C|_I_C<br>~~-—}--——~~<br>~~pf~~|30<br>15<br>~~-—}--——~~<br>~~pf~~|A| |Pulsed collector current,_t_plimited by _T_jmax|_I_Cpul s<br>~~pf~~|60<br>~~pf~~|| |Turn off safe operating area<br>_V_CE1200V,_T_j 175C|_-_<br>~~ft~~|60<br>~~ft~~|| |Diode forward current (Tj = 150°C)<br>_T_C= 25C<br>_T_C= 110C|_I_F<br>~~ft~~<br>~~pf~~|25<br>15<br>~~ft~~<br>~~pf~~|| |Diodepulsed current,_t_plimited by _T_jmax|_I_Fpul s<br>~~pf~~<br>~~ee~~|60<br>~~pf~~<br>~~eee~~|| |Gate-emitter voltage|_V_G E<br>~~ee~~|20<br>~~eee~~|V| |Short circuit withstand time2) <br>_V_GE= 15V,_V_CC600V,_T_j, start 175C<br>~~;-—_|~~|_t_SC<br>~~ee ~~<br>~~ft~~<br>~~;-—_|~~|10<br> ~~eee~~<br>~~ft~~<br>~~;-—_| —__~~|s| |Power dissipation<br>_T_C= 25C<br>~~;-—_|~~|_P_t ot<br>~~ft~~<br>~~;-—_|~~|235<br>~~ft~~<br>~~;-—_| —__~~|W| |Operating junction temperature<br>~~;-—_|~~|_T_ j <br>~~;-—_|~~<br>~~ee~~|-40...+175<br>~~;-—_| —__~~<br>~~ee~~|C<br>~~ee~~| |Storage temperature<br>~~;-—_|~~|_T_stg<br>~~;-—_|~~<br>~~ee~~|-55...+150<br>~~;-—_| —__~~<br>~~ee~~|| |Soldering temperature, 1.6mm (0.063 in.) from case for 10s<br>Wavesolderingonly, temperature on leads only|-<br>~~ee ~~<br>~~fT~~|260<br> ~~ee~~<br>~~fT~~|| - 1 J-STD-020 and JESD-022 - 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev. 2.2 12.06.2013 1 IFAG IPC TD VLS IKW15N120T2 **TrenchStop[®]** 2[nd] generation Series **==> picture [137 x 61] intentionally omitted <==** ## **Thermal Resistance** |**Thermal Resistance**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**| |**Characteristic**||||| |IGBT thermal resistance,<br>junction – case|_R_t hJC||0.63|K/W| |Diode thermal resistance,<br>junction – case|_R_t hJC D||1.12|| |Thermal resistance,<br>junction – ambient|_R_t hJA||40|| ## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified |**Electrical Characteristic,**at_T_j= 25|C, unless ot|herwise specified||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ. **|**max.**|| |**Static Characteristic**||||||| |Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V,_I_C=500µA|1200|-|-|V| |Collector-emitter saturation voltage|_V_C E( sat )|_V_G E= 15V,_I_C=15A<br>_T_j=25C<br>_T_j=150C<br>_T_ j=175C|-<br>-<br>-|1.7<br>2.1<br>2.2|2.2<br>-<br>-|| |Diode forward voltage|_V_F|_V_G E=0V,_I_F=15A<br>_T_j=25C<br>_T_j=150C<br>_T_j=175C|-<br>-<br>-|1.75<br>1.8<br>1.75|2.2<br>-<br>-|| |Gate-emitter threshold voltage|_V_G E( t h)|_I_C=0.6mA,_V_C E=_V_G E|5.2|5.8|6.4|| |Zero gate voltage collector current|_I_CE S|_V_C E=1200V,<br>_V_G E=0V<br>_T_j=25C<br>_T_j=150C<br>_T_j=175C|-<br>-<br>-|-<br>-<br>-|0.4<br>4.0<br>20|mA| |Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V|-|-|600|nA| |Transconductance|_g_fs|_V_C E=20V,_I_C=15A|-|8|-|S| Rev. 2.2 12.06.2013 2 IFAG IPC TD VLS IKW15N120T2 **TrenchStop[®]** 2[nd] generation Series **==> picture [137 x 61] intentionally omitted <==** ## **Dynamic Characteristic** |**Dynamic Characteristic**||||||| |---|---|---|---|---|---|---| |Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|1000|-|pF| |Output capacitance|_C_os s||-|100|-|| |Reverse transfer capacitance|_C_rs s||-|56|-|| |Gate charge|_Q_Gat e|_V_C C=960V,_I_C=15A<br>_V_G E=15V|-|93|-|nC| |Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|13|-|nH| |Short circuit collector current1)|_I_C( SC )|_V_G E=15V,_t_SC10s<br>_V_C C= 600V,<br>_T_j ,sta rt= 25C<br>_T_j ,sta rt= 175C|-|82<br>60|-|A| ## **Switching Characteristic, Inductive Load,** at _T_ j=25 C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=25C,<br>_V_C C=600V,_I_C=15A,<br>_V_G E=0/15V,<br>_R_G=41.8,<br>_L_<br>_2 )_=126nH,<br>_C_<br>_2)_=34pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|32|-|ns| |Rise time|_t_r||-|25|-|| |Turn-off delaytime|_t_d( of f)||-|362|-|| |Fall time|_t_f||-|95|-|| |Turn-on energy|_E_o n||-|1.25|-|mJ| |Turn-off energy|_E_o ff||-|0.8|-|| |Total switchingenergy|_E_t s||-|2.05|-|| |**Anti-Parallel Diode Characteristic**||||||| |Diode reverse recoverytime|_t_rr|_T_j=25C,<br>_V_R=600V,_I_F=15A,<br>_di_F_/dt_=450A/s|-|300|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.3||µC| |Diodepeak reverse recoverycurrent|_I_rr m||-|10||A| |Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|215|-|A/s| > 1) Allowed number of short circuits: <1000; time between short circuits: >1s. > 2) Leakage inductance _L_ and Stray capacity _C_ due to dynamic test circuit in Figure E. Rev. 2.2 12.06.2013 3 IFAG IPC TD VLS IKW15N120T2 **TrenchStop[®]** 2[nd] generation Series **==> picture [137 x 61] intentionally omitted <==** ## **Switching Characteristic, Inductive Load,** at _T_ j=175 C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=175C<br>_V_C C=600V,_I_C=15A,<br>_V_G E=0/15V,<br>_R_G= 41.8_,_<br>_L_<br>_1 )_=315nH,<br>_C_<br>_1)_=34pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|31|-|ns| |Rise time|_t_r||-|30|-|| |Turn-off delaytime|_t_d( of f)||-|450|-|| |Fall time|_t_f||-|176|-|| |Turn-on energy|_E_o n||-|1.5|-|mJ| |Turn-off energy|_E_o ff||-|1.3|-|| |Total switchingenergy|_E_t s||-|2.8|-|| |**Anti-Parallel Diode Characteristic**||||||| |Diode reverse recoverytime|_t_rr|_T_j=175C<br>_V_R=600V,_I_F=15A,<br>_di_F_/dt_=460A/s|-|460|-|ns| |Diode reverse recoverycharge|_Q_rr||-|2.65|-|µC| |Diodepeak reverse recoverycurrent|_I_rr m||-|13|-|A| |Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|123||A/s| > 1) Leakage inductance _L_ and Stray capacity _C_ due to dynamic test circuit in Figure E. Rev. 2.2 12.06.2013 4 IFAG IPC TD VLS **==> picture [137 x 61] intentionally omitted <==** ## IKW15N120T2 ## **TrenchStop[®]** 2[nd] generation Series **==> picture [232 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> 60A<br>40A<br>T C=80°C<br>T C=110°C<br>20A Ic<br>Ic<br>0A<br>10Hz 100Hz 1kHz 10kHz 100kHz<br>f , SWITCHING FREQUENCY<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 1. Collector current as a function of switching frequency** ( _T_ j 175C, _D =_ 0.5, _V_ CE = 600V, _V_ GE = 0/+15V, _R_ G = 41.8) **==> picture [231 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> t p=3µs<br>10A 10µs<br>50µs<br>150µs<br>1A<br>500µs<br>20ms<br>DC<br>0.1A<br>1V 10V 100V 1000V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25C, _T_ j 175C; _V_ GE=15V) **==> picture [236 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 200W<br>150W<br>100W<br>50W<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C<br>T C, CASE TEMPERATURE<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br> **Figure 3. Maximum power dissipation as a function of case temperature** ( _T_ j 175C) **==> picture [231 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 30A<br>20A<br>10A<br>0A<br>25°C 75°C 125°C<br>T C, CASE TEMPERATURE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 4. Maximum DC Collector current as a function of case temperature** ( _V_ GE 15V, _T_ j 175C) Rev. 2.2 12.06.2013 IFAG IPC TD VLS 5 **TrenchStop[®]** 2[nd] generation Series **==> picture [137 x 61] intentionally omitted <==** ## IKW15N120T2 **==> picture [461 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 60A 60A<br>50A 20V 50A 20V<br>V GE=17V V GE=17V<br>40A 15V 40A 15V<br>13V 13V<br>11V 11V<br>30A 30A<br>9V 9V<br>7V 7V<br>20A 20A<br>10A 10A<br>0A 0A<br>0V 1V 2V 3V 4V 0V 1V 2V 3V 4V<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>, ,<br>I C I C<br>**----- End of picture text -----**<br> _V_ CE, COLLECTOR-EMITTER VOLTAGE **Figure 5. Typical output characteristic** ( _T_ j = 25°C) **==> picture [150 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br> **Figure 6. Typical output characteristic** ( _T_ j = 175°C) **==> picture [473 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 60A<br>50A 3.0V I C =30A<br>2.5V<br>40A<br>2.0V<br>30A IC =15A<br>1.5V<br>20A IC =7.5A<br>1.0V<br>10A T J =175°C 0.5V IC =2A<br>25°C<br>0A<br>0.0V<br>0V 2V 4V 6V 8V 10V 12V<br>0°C 50°C 100°C 150°C<br>V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR CURRENT<br>,<br>I C<br>COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br> **Figure 7. Typical transfer characteristic** (VCE=20V) **Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) Rev. 2.2 12.06.2013 6 IFAG IPC TD VLS **TrenchStop[®]** 2[nd] generation Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [235 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>t f<br>100ns<br>t<br>d(on)<br>10ns<br>t r<br>7.5A 15.0A 22.5A<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **==> picture [105 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br> **Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _R_ G=41.8Ω, Dynamic test circuit in Figure E) **==> picture [234 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> t d(off)<br>100ns<br>t f<br>t<br>d(on)<br>t r<br>10ns<br>0°C 50°C 100°C 150°C<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **==> picture [119 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=15A, _R_ G=41.8Ω, Dynamic test circuit in Figure E) ## IKW15N120T2 **==> picture [210 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 ns<br>t<br>d(off)<br>t f<br>100 ns<br>t<br>d(on)<br>10 ns t r<br> <br>R G, GATE RESISTOR<br>**----- End of picture text -----**<br> **==> picture [9 x 81] intentionally omitted <==** **----- Start of picture text -----**<br> SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _I_ C=15A, Dynamic test circuit in Figure E) **==> picture [232 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 6.5V<br>6.0V<br>5.5V<br>5.0V max.<br>4.5V<br>4.0V typ.<br>3.5V<br>min.<br>0°C 50°C 100°C 150°C<br>EMITT TRSHOLD VOLTAGE<br>-<br>GATE<br>GE(th ) ,<br>V<br>**----- End of picture text -----**<br> **==> picture [119 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 600µA) Rev. 2.2 12.06.2013 IFAG IPC TD VLS 7 **==> picture [137 x 61] intentionally omitted <==** ## IKW15N120T2 ## **TrenchStop[®]** 2[nd] generation Series **==> picture [220 x 208] intentionally omitted <==** **----- Start of picture text -----**<br> 7.5mJ *) E on and E ts include losses<br> due to diode recovery<br>E ts *<br>5.0mJ<br>E on*<br>2.5mJ E off<br>0.0mJ<br>7.5A 15.0A 22.5A<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> ## _IC_ , COLLECTOR CURRENT **Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _R_ G=41.8Ω, Dynamic test circuit in Figure E) **==> picture [235 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br> due to diode recovery<br>5.00 mJ<br>E ts *<br>3.75 mJ<br>2.50 mJ E on*<br>1.25 mJ E off<br>0.00 mJ<br> <br>R G, GATE RESISTOR<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **Figure 14. Typical switching energy losses as a function of gate resistor** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _I_ C=15A, Dynamic test circuit in Figure E) **==> picture [225 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br> due to diode recovery<br>E ts*<br>2.4mJ<br>E on *<br>1.2mJ<br>E off<br>0.0mJ<br>0°C 50°C 100°C 150°C<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **==> picture [227 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br> due to diode recovery<br>5.00mJ E ts *<br>3.75mJ E on *<br>2.50mJ<br>E off<br>1.25mJ<br>0.00mJ<br>400V 500V 600V 700V<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> ## _T_ J, JUNCTION TEMPERATURE ## **Figure 15. Typical switching energy losses as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=15A, _R_ G=41.8Ω, Dynamic test circuit in Figure E) _VCE_ , COLLECTOR-EMITTER VOLTAGE ## **Figure 16. Typical switching energy losses as a function of collector emitter voltage** - (inductive load, _T_ J=175°C, VGE=0/15V, _I_ C=15A, _R_ G=41.8Ω, Dynamic test circuit in Figure E) Rev. 2.2 12.06.2013 8 IFAG IPC TD VLS **TrenchStop[®]** 2[nd] generation Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [236 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>240V<br>960V<br>10V<br>5V<br>0V<br>0nC 25nC 50nC 75nC<br>Q GE, GATE CHARGE<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br> **Figure 17. Typical gate charge** ( _I_ C=15 A) **==> picture [233 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 15µs<br>10µs<br>5µs<br>0µs<br>12V 14V 16V 18V<br>V GE, GATE-EMITTETR VOLTAGE<br>SHORT CIRCUIT WITHSTAND TIME<br>t SC,<br>**----- End of picture text -----**<br> **Figure 19. Short circuit withstand time as a function of gate-emitter voltage** ( _V_ CE=600V _,_ start at _T_ J175°C _)_ ## IKW15N120T2 **==> picture [230 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 1nF C iss<br>100pF C oss<br>C rss<br>10pF<br>0V 10V 20V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br> **==> picture [150 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br> **Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz) **==> picture [233 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 100A<br>75A<br>50A<br>25A<br>0A<br>12V 14V 16V 18V<br>V GE, GATE-EMITTETR VOLTAGE<br>COLLECTOR CURRENT<br>, short circuit<br>I C(sc)<br>**----- End of picture text -----**<br> **Figure 20. Typical short circuit collector current as a function of gateemitter voltage** ( _V_ CE 600V, _T_ j,start =175C) Rev. 2.2 12.06.2013 9 IFAG IPC TD VLS **==> picture [137 x 61] intentionally omitted <==** ## IKW15N120T2 ## **TrenchStop[®]** 2[nd] generation Series **==> picture [230 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 25A<br>V<br>CE<br>600V<br>20A<br>15A 400V<br>10A<br>200V<br>5A<br>I<br>C<br>0A 0V<br>0us 0.4us 0.8us 1.2us<br>t , TIME<br>EMITTER VOLTAGE<br>-<br>COLLECTOR<br>,<br>CE<br>V<br>**----- End of picture text -----**<br> **Figure 21. Typical turn on behavior** (VGE=0/15V, _R_ G=41.8Ω, _T_ j = 175C, Dynamic test circuit in Figure E) **==> picture [230 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 15A 600V<br>I<br>C<br>10A 400V<br>5A 200V<br>V<br>CE<br>0A 0V<br>0us 0.4us 0.8us 1.2us<br>t , TIME<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 22. Typical turn off behavior** (VGE=15/0V, _R_ G=41.8Ω, _T_ j = 175C, Dynamic test circuit in Figure E) **==> picture [477 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 100K/W<br>100K/W<br>D =0.5<br>D =0.5<br>R , ( K / W ) , ( s )<br>0.2 0.291 2.75*10 [-4]<br>0.2 0.434 2.60*10 [-3 ]<br>10-1K/W 0.1 0 R .14 , ( K / W ) 3 3. 06 , *1 ( s ) 0 [-4] 0.363 1.48 * 10 [-2]<br>0.217 3.47*10 [-3 ] 0.1 0.028 1.78*10 [-1]<br>0.05 0.258 1.71*10 [-2] 10-1K/W<br>0.017 2.63*10 [-1] 0.05 R 1 R 2<br>0.02<br>0.01 R 1 R 2 0.02<br>10-2K/W single puls e 0.01 C 1 = 1 / R 1 C 2 = 2 / R 2<br>C 1=1/ R 1 C 2=2/ R 2 single pulse<br>10-2K/W<br>10µs 100µs 1ms 10ms 100ms 10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH t P, PULSE WIDTH<br>TRANSIENT THERMAL RESISTANCE TRANSIENT THERMAL RESISTANCE<br>, ,<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br> **Figure 23. IGBT transient thermal resistance** ( _D = t_ p / _T_ ) **Figure 24. Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ P/ _T_ ) Rev. 2.2 12.06.2013 10 IFAG IPC TD VLS **==> picture [137 x 61] intentionally omitted <==** ## IKW15N120T2 ## **TrenchStop[®]** 2[nd] generation Series **==> picture [466 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> 600ns<br>T =175°C<br>3µC J<br>500ns<br>400ns<br>2µC<br>300ns<br>T =175°C<br>J<br>200ns T =25°C<br>1µC J<br>T =25°C<br>100ns J<br>0ns 0µC<br>400A/µs 800A/µs 1200A/µs 400A/µs 800A/µs 1200A/µs<br>di F /dt , DIODE CURRENT SLOPE di F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY TIME<br>, REVERSE RECOVERY CHARGE<br>t rr rr,<br>Q<br>**----- End of picture text -----**<br> **Figure 23. Typical reverse recovery time as a function of diode current slope** ( _V_ R=600V, _I_ F=15A, Dynamic test circuit in Figure E) **Figure 24. Typical reverse recovery charge as a function of diode current slope** ( _V_ R=600V, _I_ F=15A, Dynamic test circuit in Figure E) **==> picture [226 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> T =175°C<br>J<br>20A<br>15A<br>T =25°C<br>J<br>10A<br>5A<br>0A<br>400A/µs 800A/µs 1200A/µs<br>di F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY CURRENT<br>I rr,<br>**----- End of picture text -----**<br> **Figure 25. Typical reverse recovery current as a function of diode current slope** ( _V_ R=600V, _I_ F=15A, Dynamic test circuit in Figure E) **==> picture [238 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> T =25°C<br>-600A/µs J<br>-500A/µs<br>-400A/µs<br>T =175°C<br>J<br>-300A/µs<br>-200A/µs<br>-100A/µs<br>-0A/µs<br>400A/µs 800A/µs 1200A/µs<br>di F /dt , DIODE CURRENT SLOPE<br>DIODE PEAK RATE OF FALL<br>,<br>/dt<br>rr<br>di OF REVERSE RECOVERY CURRENT<br>**----- End of picture text -----**<br> **Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** ( _V_ R=600V, _I_ F=15A, Dynamic test circuit in Figure E) Rev. 2.2 12.06.2013 11 IFAG IPC TD VLS **TrenchStop[®]** 2[nd] generation Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [223 x 230] intentionally omitted <==** **----- Start of picture text -----**<br> 60A<br>T J =25°C<br>50A<br>175°C<br>40A<br>30A<br>20A<br>10A<br>0A<br>0V 1V 2V<br>V F, FORWARD VOLTAGE<br>FORWARD CURRENT<br>,<br>I F<br>**----- End of picture text -----**<br> **Figure 27. Typical diode forward current as a function of forward voltage** ## IKW15N120T2 **==> picture [233 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0V I F =30A<br>15A<br>1.5V<br>7.5A<br>2A<br>1.0V<br>0.5V<br>0.0V<br>0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br>FORWARD VOLTAGE<br>,<br>F<br>V<br>**----- End of picture text -----**<br> **Figure 28. Typical diode forward voltage as a function of junction temperature** Rev. 2.2 12.06.2013 12 IFAG IPC TD VLS IKW15N120T2 **TrenchStop[®]** 2[nd] generation Series Rev. 2.2 12.06.2013 13 IFAG IPC TD VLS **==> picture [137 x 61] intentionally omitted <==** ## IKW15N120T2 ## **TrenchStop[®]** 2[nd] generation Series **==> picture [189 x 328] intentionally omitted <==** **----- Start of picture text -----**<br> i,v<br>di F /dt t r r =t S + t F<br>Q r r =Q S + Q F<br>t<br>r r<br>I F t S t F<br>I Q S Q F 10% I r r m t<br>r r m 90% I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>1 2 n<br>r1 r 2 r n<br>T (t)j<br>p(t) r1 r 2 r n<br>T C<br>**----- End of picture text -----**<br> **Figure A. Definition of switching times** **Figure D. Thermal equivalent circuit** **==> picture [188 x 194] intentionally omitted <==** **Figure B. Definition of switching losses** **Figure E. Dynamic test circuit** Rev. 2.2 12.06.2013 14 IFAG IPC TD VLS IKW15N120T2 **TrenchStop[®]** 2[nd] generation Series **==> picture [137 x 61] intentionally omitted <==** **Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ) **.** ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 12.06.2013 15 IFAG IPC TD VLS
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →