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IKW15N120H3FKSA1
IGBT, 30 A, 2.05 V, 217 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):2.05V; Power Dissipation Pd:217W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 217W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.05V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.63 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IGBT IKW15N120H3 IKW15N120H3 **==> picture [469 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>* low EMI<br>* Very soft, fast recovery anti-parallel diode<br>G<br>* maximum junction temperature 175°C<br>E<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/ &<br>Applications:<br>* uninterruptible power supplies , =<br>* welding converters ‘A<br>* converters with high switching frequency<br>G<br>C<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKW15N120H3|1200V|15A|2.05V|175°C|K15H1203|PG-TO247-3| 2 IKW15N120H3 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�third�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.�2.1,��2014-12-01 IKW15N120H3 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�third�generation ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emitter voltage|_V_CE||1200|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||30.0<br>15.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A| |Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||60.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||15.0<br>7.5|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A| |Gate-emitter voltage|_V_GE||±20|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||217.0<br>105.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.70|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.12|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W| Rev.�2.1,��2014-12-01 4 IKW15N120H3 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�third�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|2.05<br>2.50<br>2.70|2.40<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=7.5A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.80<br>1.85|2.35<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|2.40<br>2.60<br>2.60|3.05<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|5.0|5.8|6.5|V| |Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|250.0<br>2500.0|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|600|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|7.5|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|875|-|pF| |Output capacitance|_C_oes||-|75|-|| |Reverse transfer capacitance|_C_res||-|45|-|| |Gate charge|_Q_G|_V_CC=960V,_I_C=15.0A,<br>_V_GE=15V|-|75.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤600V,<br>_t_SC≤10µs<br>_T_vj=175°C|-|52|-|A| Rev.�2.1,��2014-12-01 5 IKW15N120H3 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�third�generation ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=35.0Ω,_R_G(off)=35.0Ω,<br>_L_σ=95nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns| |Rise time|_t_r||-|34|-|ns| |Turn-off delaytime|_t_d(off)||-|260|-|ns| |Fall time|_t_f||-|14|-|ns| |Turn-on energy|_E_on||-|1.10|-|mJ| |Turn-off energy|_E_off||-|0.45|-|mJ| |Total switchingenergy|_E_ts||-|1.55|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=15.0A,<br>_di_F_/dt_=500A/µs|-|260|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|0.80|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|7.7|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-110|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=35.0Ω,_R_G(off)=35.0Ω,<br>_L_σ=95nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns| |Rise time|_t_r||-|30|-|ns| |Turn-off delaytime|_t_d(off)||-|327|-|ns| |Fall time|_t_f||-|43|-|ns| |Turn-on energy|_E_on||-|1.60|-|mJ| |Turn-off energy|_E_off||-|0.90|-|mJ| |Total switchingenergy|_E_ts||-|2.50|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=15.0A,<br>_di_F_/dt_=500A/µs|-|470|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|1.70|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|9.8|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-80|-|A/µs| 6 Rev.�2.1,��2014-12-01 ~~High speed switching series third generation~~ IKW15N120H3 **==> picture [490 x 623] intentionally omitted <==** **----- Start of picture text -----**<br> 70 100<br>PrPte [Et] er J<br>60 \ \\ A Se} LY<br>mal ee<br>50 PAUSINI Feit tp=1µs<br>Et = THIN TN SMT: 10 10µs Wet NTL |<br>fo \ \ fo — At te tt ett<br>2a 40 | SNUAEFNT} ocge Stee 50µs<br>o TC=80° TIME NT LNT a A<br>100µs<br>TC=110°<br>C 30 THK \ \ | 5 Soo 200µs<br>. SoA ee<br>TC=80° 500µs<br>us STAN \ uy 1 S MELAS TENT<br>:O; 20 TC=110° Lt ITIPTANCll \ |\\\ 8Oee =LaoPE DC<br>10 JL_Ic AL | TINA‘SY PtA TTT PTTPT<br>zen ig<br>LITT ANSSO PAE IE EL<br>0 0.1<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =600V, V GE=15/0V,<br>r G=35 Ω )<br>250 30<br>200<br>2 =<br>S i 20<br>150<br>Ry ia<br>a =)<br>B<br>2<br>100<br>if= e42<br>2 fe) 10<br>oO<br>50<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br> > Figure 3. Power **temperature** ( _T_ j ≤ 175°C) Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C) 7 IKW15N120H3 **==> picture [469 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> 60 Peer Lr] 60 Pt | tt LA be<br>VGE=20V VGE=20V<br>Pott 17V YL poses 17V | fy<br>45 45<br>15V 15V<br>. Ty |. SS<br>13V 13V<br>: //eeee- an ae<br>11V 11V<br>9V 9V<br>30 30<br>: NY || 8 NY Lt<br>7V 7V<br>5V 5V<br>15 15<br>Sf NIRS LN<br>ANE PORK<br>aeJae Zoe<br>F N<br>0 | FN 0 |<br>0 2 4 6 0 2 4 6 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [474 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 60 5.0<br>Tj=25°C IC=7.5A<br>Tj=175°C IC=15A<br>EF}+4+y. 4.5 E IC=30A e]<br>al e es<br>45 4.0<br>2 eer eee<br>3.5<br>30 3.0<br>ee e/a ee<br>Bee PE<br>2.5<br>15 2.0<br>1.5<br>ow UE<br>0 1.0<br>5 10 15 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=20V) transfer characteristic wypicaa Tunction collector-emitterof Junction temperatureSaturation voltage<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> ( _V_ GE=15V) 8 IKW15N120H3 **==> picture [474 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a 1000 a<br>pt| td(off) re ee ee ee | td(off) ee ee eee eee<br>tf tf<br>| re | ee ee ee ee<br>td(on) td(on)<br>PY a ee ee I pj} | || eh<br>tr tr<br>Pp o tt aTTee ee eee I Se =ee eee<br>i ee Pt ert tT tt Tt<br>op)Wwze] ] | | | PeWwop) ee etyyy<br>FF<br>g 100 a a g 100 a<br>= a a a a<br>rs) poGS a eee<br>Ee Se a ee ee ee<br>=Of a eee e ee po} | |eee<br>ee e e TE rhe TD<br>re ea4 i e eee<br>ee ee c e<br>7 /<br>7<br>10 10<br>0 5 10 15 20 25 30 10 30 50 70 90 110<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =175°C, V CE =600V, V GE=15/0V, (ind. load, T j =175°C, V CE =600V, V GE=15/0V,<br>r G=35 , test circuit in Fig. E) I C =15A, test circuit in Fig. E)<br>1000 aa 7<br>| | td(off) aa ee typ.<br>tf min.<br>td(on) max.<br>tr<br>SS ee ee ee ee 6 ||<br>> SS ><br>5<br>=F Ww7) ys “TS, NN se_<br>100<br>g OE Th —<br>= po ~S<br>5E aa a * 4 4 = IN ~<br>= a ee ee eeee ee —_<br>3<br>10 2<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching times as a function of Figure 12. Gate-emitter threshold voltage as a<br>junction temperature of junction junction temperature<br>(ind. load, V CE =600V, V GE =15/0V, I C=15A, ( I C=0.5mA)=0.5mA)<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 12. Gate-emitter of junction junction ( _I_ C=0.5mA)=0.5mA) _r_ G=35 9 IKW15N120H3 **==> picture [474 x 668] intentionally omitted <==** **----- Start of picture text -----**<br> 7 5<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>6<br>; -~ 4 | p]<br>| | ie<br>Ww 5 ; 7A<br>7) f ’ 7)<br>—! a / —! 3<br>> 4 4 > a<br>ow ow yaa<br>Ww ’ Ww +<br>Z / Zz - ea<br>3<br>Zz: a / eeZz 2 = ee<br>: “ “ OSf fetPa<br>iO 2 ao 7 E = ea |<br>1 ——_+—_|<br>) 1 “a vo . —_ . ° = _|<br>0 0<br>0 5 10 15 20 25 30 10 30 50 70 90 110<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =175°C, V CE =600V, V GE=15/0V, (ind. load, T j =175°C, V CE =600V, V GE=15/0V,<br>r G=35 , test circuit in Fig. E) I C =15A, test circuit in Fig. E)<br>2.5 3.5<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>3.0<br>2.0<br>Ww Ww 2.5<br>7) 7)<br>ep) ep)<br>| 1.5 | waa<br>2.0<br>Ww a we aa<br>Z Ww a of<br>Wwow _ WwZ 1.5 eea |eL- uc<br>O O -?<br>1.0<br>OZ | OZ oa a<br>1.0<br>”. 0.5 ae ”.<br>; —T | 8 _<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 400 500 600 700 800<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =600V, V GE =15/0V, I C=15A, (ind. load, T j =175°C, V GE =15/0V, I C=15A,<br>r G=35 , test circuit in Fig. E) r G=35 , test circuit in Fig. E)<br>E E<br>E E<br>**----- End of picture text -----**<br> 10 IKW15N120H3 **==> picture [230 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>240V<br>960V<br>14<br>= /<br>2. 12 /<br>Ww , ‘<br>) J<br>< y<br>10<br>3 a<br>iv<br>8<br>i<br>uwE 6<br><x<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70 80<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br> Figure 17. Typical ( _I_ C=15A) **==> picture [230 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>aa<br>a ee Cies az<br>_ es Coes ||<br>ra po Cres | |<br>i ee<br>Zz an<br><x .<br>x 100 pd<br>Oo. aa a<br>ER es<br>10<br>0 10 20 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>**----- End of picture text -----**<br> Figure 18. **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V GE<br>**----- End of picture text -----**<br> **==> picture [471 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 90 50<br><x 80 | | |<br>Lu — 40<br>x Ww<br>70<br>ac =<br>a Zz<br>o 60 / <x<br>30<br>4 =<br>50<br>fe) =<br>O / kK<br>a)3 40 Z v4 20<br>a 6)<br>O Kb<br>fe 30 ©<br>L 7p) 10<br>20<br>10 0<br>10 12 14 16 18 10 12 14 16 18 20<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br> Figure 19. Typical short circuit function of gate-emitter ( _V_ CE 600V, start at _T_ j=25°C) Figure 20. Short circuit withstand time gate-emitter voltage ( _V_ CE 600V, start at _T_ j 150°C) 11 IKW15N120H3 **==> picture [482 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Ce ar! Goee<br>1<br>sa eT = | LUI eel<br>S ere TT A ETM TTT S SS ee<br>= Pay alll = AY A a |<br>we9 LTEUN Daa D=0.5 LUI EEEeS D=0.5<br>ne Al 0.2 S) atl 0.2 Co<br>a 0.1 “a / 0.1 a re =H / tt 0.1<br>Cocco |I$ Er<br>Ww= eei ea 0.05 TC 2 AC 0.05<br>= f i ey = millBE ApA |<br>0.02 0.1 0.02<br>4xt HAI.MIC SSHeC Cea<br>0.01 0.01<br>= eel aaa eee<br>single pulse single pulse<br>weSEAToraeer A7Aaa| ITA =a = CeaA 7A cil<br>0.01<br>ge) 0.01 TA TTI TTITUTTETi<br>z HH ~H & 7EEE ~_ fi<br>ce | Mn ce 20 il<br>FE a Tima a aa a at reer eae<br>(A A AE LH<br>i: 1 2 3 4 5 i: 1 2 3 4 5<br>ri[K/W]: 3.9E-3 0.15885 0.23655 0.2763 0.015225 ri[K/W]: 0.67965 0.8319 0.51885 0.08454 9.7E-3<br>τ i[s]: 1.6E-5 3.0E-4 2.9E-3 0.01490178 0.1582781 τ i[s]: 2.5E-4 1.5E-3 8.7E-3 0.03938437 0.2738978<br>| / TT Tl||| |<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance Figure 22. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>( D = t p/T)<br>800 2.5<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>Tj=175°C, IF = 15A Tj=175°C, IF = 15A<br>700<br>= . =a 2.0<br>Ww \ 0)<br>600<br>Ww . > 1.5<br>3 . a<br>500 PRL LL :<br>g SS uv<br>: s g<br>ae x 1.0<br>a WW<br>WW 400 ef ped ;<br>> im<br>.a<br>. 0.5<br>~<br>300<br>200 0.0<br>100 300 500 700 900 1100 100 300 500 700 900 1100<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>thJC thJC<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> Figure 23. ( _V_ R=600V) Figure 24. ( _V_ R=600V) 12 IKW15N120H3 **==> picture [476 x 623] intentionally omitted <==** **----- Start of picture text -----**<br> 15 0<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>Tj=175°C, IF = 15A Tj=175°C, IF = 15A<br>SO sO<br>12<br>= Pan g<br>-50<br>5 ae ~ : |<br>9 LL —_| x _—<br>S we ‘6 _<br>(e)2i A ooO— -100 NO ar<br>6 ot, 8 oS<br>aw é a 3 .<br>uw / o ~:<br>uw ! se]<br>= . ™<br>-150<br>3<br>i. PTT iNS<br>0 -200<br>100 300 500 700 900 1100 100 300 500 700 900 1100<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 25. Typical reverse recovery current as a Figure 26. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=600V) current slope<br>( V R=600V)<br>50 4.0<br>Tj=25°C IF=3.75A<br>Tj=175°C IF=7.5A<br>IF=15A<br>ae<br>3.5<br>40<br>= uw 3.0<br>Zz Oo<br>im <x<br>30<br>D> / oO<br>re) J ><br>, Q 2.5 =<br>xt / xt iPad<br>= 20 =<br>&<br>2.0<br>e) /. ©<br>10<br>| an + PTT<br>1.5<br>| |<br>0 1.0<br>0 1 2 3 4 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br> Figure 27. Figure 28. 13 IKW15N120H3 **==> picture [146 x 65] intentionally omitted <==** High�speed�switching�series�third�generation ## PG-TO247-3 14 Rev.�2.1,��2014-12-01 IKW15N120H3 **==> picture [146 x 65] intentionally omitted <==** High�speed�switching�series�third�generation **==> picture [249 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> v GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>**----- End of picture text -----**<br> **==> picture [253 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> v GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>v CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt a b<br>a b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>t<br>**----- End of picture text -----**<br> Figure D. **==> picture [122 x 111] intentionally omitted <==** **==> picture [10 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Ls, relief capacitor C ,r (only for ZVT switching) 15 Rev.�2.1,��2014-12-01 IKW15N120H3 **==> picture [146 x 65] intentionally omitted <==** ## High speed switching series third generation ## Revision History ## IKW15N120H3 Revision: 2014-12-01, Rev. 2.1 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |1.1|2009-11-27|-| |1.2|2010-02-10|-| |2.1|2014-12-01|Final data sheet| ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1, 2014-12-01 16
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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