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IKW15N120CS7XKSA1
IGBT, 36 A, 1.65 V, 176 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT 7
- Power Dissipation: 176W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 36A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.64 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** ## **Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology copacked with soft and fast recovery Emitter Controlled 7 diode** ## **Features** - VCE=1200 V - IC=15 A - IGBT co-packed with full current, soft and low Qrr diode - Low saturation voltage VCE(sat) = 2.0 V at Tvj=175 °C - Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...) - Short circuit ruggedness 8 µsec - Wide range of dv/dt controllability - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ ## **Potential applications** **==> picture [41 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>C<br>E<br>**----- End of picture text -----**<br> - Industrial Drives - Industrial Power Supplies - Solar Inverters ## **Product validation** - Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 ## **Description** **==> picture [135 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> |**Type**|**Package**|**Marking**| |---|---|---| |IKW15N120CS7|PG-TO247-3|K15MCS7| Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** 1.00 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16| Datasheet 2 1.00 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**Table 1**<br>**Characteristic values**|**Table 1**<br>**Characteristic values**|**Table 1**<br>**Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Internal emitter inductance<br>measured 5mm. (0.197in)<br>from case|_L_E|||13.0||nH| |Storage temperature|_T_stg||-55||150|°C| |Soldering temperature||wave soldering 1.6mm (0.063in.) from case<br>for 10s|||260|°C| |Mounting torque , M3 screw<br>Maximum of mounting<br>process: 3|_M_||||0.6|Nm| |Thermal resistance,<br>junction-ambient|_R_th(j-a)||||40|K/W| ## **2 IGBT** **Table 2 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||1200|V| |DC collector current, limited<br>by Tvjmax|_I_C||_T_C= 25 °C|36|A| ||||_T_C= 100 °C|25|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpuls|||45|A| |Turn-of safe operating area||_V_CE≤ 1200 V,_T_vj≤ 175 °C||45|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p≤ 0.5 µs,_D_< 0.001||±25|V| |Short circuit withstand time|_t_SC|_V_CC≤ 600 V,_V_GE= 15 V, Allowed number of<br>short circuits < 1000, Time between short<br>circuits ≥ 1.0 s,_T_vj= 150 °C||8|µs| |Power dissipation|_P_tot||_T_C= 25 °C|176|W| ||||_T_C= 100 °C|88|| ## **Table 3 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 15.0 A,_V_GE= 15 V|_T_vj= 25 °C||1.65|2.00|V| ||||_T_vj= 175 °C||2.00||| Datasheet 3 1.00 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**Characteristic values (continued)**|**Table 3**<br>**Characteristic values (continued)**|**Table 3**<br>**Characteristic values (continued)**|**Table 3**<br>**Characteristic values (continued)**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 0.30 mA, VCE= VGE,_T_vj= 25 °C||5.15|5.70|6.45|V| |Zero gate voltage collector<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||40|µA| ||||_T_vj= 175 °C||1000||| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 15.0 A,_V_CE= 20 V,_T_vj=|175 °C||6.5||S| |Short circuit collector<br>current|_I_SC|_V_CC≤ 600 V,_V_GE= 15 V,_t_SC≤ 8 µs, Allowed<br>number of short circuits < 1000 , Time<br>between short circuits ≥ 1.0 s,_T_vj= 25 °C|||95||A| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||2.2||nF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||55||pF| |Reverse transfer capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||10||pF| |Gate charge|_Q_G|_I_C= 15.0 A,_V_GE= 15 V,_V_CE|= 960 V||95||nC| |Turn-on delay time|_t_don|_V_CE= 600 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω|_T_vj= 25 °C,<br>_I_C= 15.0 A||23||ns| ||||_T_vj= 175 °C,<br>_I_C= 15.0 A||20||| |Rise time (inductive load)|_t_r|_V_CE= 600 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω|_T_vj= 25 °C,<br>_I_C= 15.0 A||11||ns| ||||_T_vj= 175 °C,<br>_I_C= 15.0 A||14||| |Turn-of delay time|_t_dof|_V_CE= 600 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω|_T_vj= 25 °C,<br>_I_C= 15.0 A||170||ns| ||||_T_vj= 175 °C,<br>_I_C= 15.0 A||250||| |Fall time (inductive load)|_t_f|_V_CE= 600 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω|_T_vj= 25 °C,<br>_I_C= 15.0 A||100||ns| ||||_T_vj= 175 °C,<br>_I_C= 15.0 A||270||| |Turn-on energy|_E_on|_V_CE= 600 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω|_T_vj= 25 °C,<br>_I_C= 15.0 A||0.75||mJ| ||||_T_vj= 175 °C,<br>_I_C= 15.0 A||1.15||| |Turn-of energy|_E_of|_V_CE= 600 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω|_T_vj= 25 °C,<br>_I_C= 15.0 A||0.70||mJ| ||||_T_vj= 175 °C,<br>_I_C= 15.0 A||1.60||| Datasheet 1.00 4 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** ## **Characteristic values (continued)** ||||||||| |---|---|---|---|---|---|---|---| |**Table 3**<br>**Characteristic values (continued)**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Total switching energy|_E_ts|_V_CE= 600 V,_V_GE= 15 V,<br>_R_Gon= 10.0 Ω,<br>_R_Gof= 10.0 Ω|_T_vj= 25 °C,<br>_I_C= 15.0 A||1.45||mJ| ||||_T_vj= 175 °C,<br>_I_C= 15.0 A||2.75||| |IGBT thermal resistance,<br>junction-case|_R_thjc||||0.65|0.85|K/W| |Operating junction<br>temperature|_T_vj|||-40||175|°C| ## **3 Diode** |**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**|||| |---|---|---|---|---|---| |**Table 4**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj≥ 25 °C||1200|V| |Diode forward current,<br>limited by Tvjmax|_I_F||_T_C= 25 °C|30|A| ||||_T_C= 100 °C|20|| |Diode pulsed current,<br>limited by Tvjmax|_I_Fpuls|||45|A| |Power dissipation|_P_tot||_T_C= 25 °C|100|W| ||||_T_C= 100 °C|50|| **Table 5 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 15.0 A|_T_vj= 25 °C||1.65|2.15|V| ||||_T_vj= 175 °C||1.60||| |Reverse leakage current|_I_R|_V_R= 1200 V|_T_vj= 25 °C|||40|µA| ||||_T_vj= 175 °C||1000||| |Diode reverse recovery time|_t_rr|_V_R= 600 V,_R_Gon= 10.0 Ω|_T_vj= 25 °C,<br>_I_F= 15.0 A||135||ns| ||||_T_vj= 175 °C,<br>_I_F= 15.0 A||265||| |Diode reverse recovery<br>charge|_Q_rr|_V_R= 600 V,_R_Gon= 10.0 Ω|_T_vj= 25 °C,<br>_I_F= 15.0 A||0.87||µC| ||||_T_vj= 175 °C,<br>_I_F= 15.0 A||2.15||| Datasheet 1.00 5 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 5**<br>**Characteristic values (continued)**|**Table 5**<br>**Characteristic values (continued)**|**Table 5**<br>**Characteristic values (continued)**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode peak reverse recovery<br>current|_I_rrm|_V_R= 600 V,_R_Gon= 10.0 Ω|_T_vj= 25 °C,<br>_I_F= 15.0 A||15.4||A| ||||_T_vj= 175 °C,<br>_I_F= 15.0 A||19.7||| |Diode peak rate of fall of<br>reverse recovery current|_dI_rr_/dt_|_V_R= 600 V,_R_Gon= 10.0 Ω|_T_vj= 25 °C,<br>_I_F= 15.0 A||-140||A/µs| ||||_T_vj= 175 °C,<br>_I_F= 15.0 A||-85||| |Reverse recovery energy|_E_rec|_V_R= 600 V,_R_Gon= 10.0 Ω|_T_vj= 25 °C,<br>_I_F= 15.0 A||0.25||mJ| ||||_T_vj= 175 °C,<br>_I_F= 15.0 A||0.75||| |Diode thermal resistance,<br>junction-case|_R_thjc||||1.10|1.50|K/W| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ _Dynamic test circuit, parasitic inductance L_ σ _= 30 nH, C_ σ _= 8 pF_ Datasheet 6 1.00 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **4 Characteristics diagrams** **Reverse bias safe operating area, IGBT** IC = f(VCE) Tvj≤175 °C, VGE = 15 V **Typical output characteristic, IGBT** IC = f(VCE) T = 25 °C vj **==> picture [539 x 311] intentionally omitted <==** **----- Start of picture text -----**<br> 100 45<br>40<br>35<br>10 30<br>25<br>20<br>1 15<br>10<br>5<br>0.1 0<br>1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Typical output characteristic, IGBT Typical transfer characteristic, IGBT<br>IC = f(VCE) IC = f(VGE)<br>Tvj = 150 °C VCE = 20 V<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 45 45<br>40 40<br>35 35<br>30 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4 5 6 7 8 9 10 11 12<br>**----- End of picture text -----**<br> Datasheet 1.00 2021-03-17 7 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical collector-emitter saturation voltage as a function of junction temperature, IGBT** ## **Gate-emitter threshold voltage as a function of junction temperature, IGBT** VCEsat = f(Tvj) VGEth = f(Tvj) IC = 0.85 mA VGE = 15 V **==> picture [539 x 323] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0 8<br>3.5<br>7<br>3.0<br>2.5<br>6<br>2.0<br>5<br>1.5<br>1.0<br>4<br>0.5<br>0.0 3<br>-50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150<br>Typical switching times as a function of collector Typical switching times as a function of gate resistor,<br>current, IGBT IGBT<br>t = f(IC) t = f(RG)<br>VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10.0 Ω IC = 15.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>100 100<br>10 10<br>1 1<br>0 5 10 15 20 25 30 0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> Datasheet 8 1.00 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching times as a function of junction Typical switching energy losses as a function of temperature, IGBT collector current, IGBT** t = f(Tvj) IC = 15.0 A, VCE = 600 V, VGE = 0/15 V, RG = 10.0 Ω **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of gate resistor, IGBT** E = f(RG) IC = 15.0 A, VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>3<br>2<br>1<br>0<br>10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> E = f(IC) VCE = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10.0 Ω **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of junction temperature, IGBT** E = f(Tvj) IC = 15.0 A, VCE = 600 V, VGE = 0/15 V, RG = 10.0 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet 9 1.00 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching energy losses as a function of collector emitter voltage, IGBT** ## E = f(VCE) ## **Typical gate charge, IGBT** VGE = f(QGE) IC = 15.0 A **==> picture [213 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> IC = 15.0 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10.0 Ω<br>**----- End of picture text -----**<br> **==> picture [539 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0 16<br>3.5 14<br>3.0 12<br>2.5 10<br>2.0 8<br>1.5 6<br>1.0 4<br>0.5 2<br>0.0 0<br>400 450 500 550 600 650 700 750 800 0 10 20 30 40 50 60 70 80 90 100<br>Typical capacitance as a function of collector-emitter Typical short circuit collector current as a function of<br>voltage, IGBT gate-emitter voltage, IGBT<br>C = f(VCE) IC(SC) = f(VGE)<br>f = 100 kHz, VGE = 0 V Tvj = 150 °C, VCC = 600 V<br>10000 80<br>70<br>1000 60<br>50<br>100 40<br>30<br>10 20<br>10<br>1 0<br>0 5 10 15 20 25 30 12.0 12.5 13.0 13.5 14.0 14.5 15.0<br>**----- End of picture text -----**<br> Datasheet 10 1.00 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Short circuit withstand time as a function of gateemitter voltage, IGBT** tSC = f(VGE) ## **IGBT transient thermal impedance, IGBT** Zth = f(tp) D = tp/T ## Tvj≤150 °C, VCC = 600 V **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>12.0 12.5 13.0 13.5 14.0 14.5 15.0<br>**----- End of picture text -----**<br> ## **Diode transient thermal impedance as a function of pulse width, Diode** Zth = f(tp) **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.0001<br>1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br> ## **Typical diode forward current as a function of forward voltage, Diode** IF = f(VF) D = tp/T **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001<br>0.0001<br>1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br> Datasheet 1.00 2021-03-17 11 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical diode forward voltage as a function of junction temperature, Diode** VF = f(Tvj) ## **Typical diode current slope as a function of gate resistor, Diode** diF/dt = f(RG) IC = 15.0 A, VCE = 600 V, VGE = 0/15 V **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 3.00<br>2.75<br>2.50<br>2.25<br>2.00<br>1.75<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>-50 -25 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical reverse recovery time as a function of diode current slope, Diode** trr = f(diF/dt) VR = 600 V, IF = 15.0 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>200 300 400 500 600 700 800 900 1000 1100<br>**----- End of picture text -----**<br> **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1200<br>1000<br>800<br>600<br>400<br>200<br>10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> **Typical reverse recovery charge as a function of diode current slope, Diode** Qrr = f(diF/dt) VR = 600 V, IF = 15.0 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>200 300 400 500 600 700 800 900 1000 1100<br>**----- End of picture text -----**<br> Datasheet 12 1.00 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical reverse recovery current as a function of diode current slope, Diode** Irr = f(diF/dt) ## VR = 600 V, IF = 15.0 A ## **Typical diode peak rate of fall of reverse recovery current as a function of diode current slope, Diode** dIrr/dt = f(diF/dt) VR = 600 V, IF = 15.0 A **==> picture [539 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 20.0 0<br>-20<br>17.5<br>-40<br>15.0<br>-60<br>12.5 -80<br>-100<br>10.0<br>-120<br>7.5<br>-140<br>5.0 -160<br>200 300 400 500 600 700 800 900 1000 1100 200 300 400 500 600 700 800 900 1000 1100<br>Typical reverse energy losses as a function of diode<br>current slope, Diode<br>Erec = f(diF/dt)<br>VR = 600 V, IF = 15.0 A<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>200 300 400 500 600 700 800 900 1000 1100<br>**----- End of picture text -----**<br> Datasheet 13 1.00 2021-03-17 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **5 Package outlines** **5 Package outlines** **==> picture [105 x 47] intentionally omitted <==** **==> picture [190 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> Package Drawing PG-TO247-3<br>**----- End of picture text -----**<br> **==> picture [397 x 364] intentionally omitted <==** **==> picture [262 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br> **Figure 6** Datasheet 1.00 2021-03-17 14 **IKW15N120CS7 Short circuit rugged 1200 V TRENCHSTOP[™] IGBT 7 technology** **6 Testing conditions** **6 Testing conditions** **==> picture [105 x 47] intentionally omitted <==** **==> picture [463 x 565] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> ## **Figure 7** Datasheet 1.00 2021-03-17 15 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2021-03-17 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2021 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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