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IKW15N120BH6XKSA1
IGBT, 30 A, 1.9 V, 200 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 6
- Power Dissipation: 200W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.9V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.05 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## IKW15N120BH6 **==> picture [474 x 187] intentionally omitted <==** **----- Start of picture text -----**<br> High speed soft switching TRENCHSTOP TM _ IGBT 6 in Trench and Fieldstop<br>technology copacked with soft and fast recovery anti-parallel diode<br>Features: C<br>1200V TRENCHSTOP TM _ IGBT6 technology offering:<br>* High efficiency in hard switching and resonant topologies<br>¢ Easy paralleling capability due to positive temperature<br>coefficient in V CEsat G<br>« Low EMI<br>E<br>* Low Gate Charge Q g<br>* Very soft, fast recovery anti-parallel diode<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models: =<br>http://www.infineon.com/igbt/<br>**----- End of picture text -----**<br> **==> picture [103 x 254] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>=<br>ys<br>G<br>C<br>E<br>**----- End of picture text -----**<br> ## **Applications:** |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKW15N120BH6|1200V|15A|1.9V|175°C|K15MBH6|PG-TO247-3| Datasheet www.infineon.com 2018-05-07 IKW15N120BH6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.1 2018-05-07 Datasheet IKW15N120BH6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||30.0<br>15.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A| |Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||60.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||15.0<br>7.5|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤0.5µs,_D_<0.001)|_V_GE||±20<br>25|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤500V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||200.0<br>100.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.74|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|2.40|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 3 V�2.1 2018-05-07 Datasheet IKW15N120BH6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.90<br>2.20<br>2.35|2.30<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=7.5A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.00|2.40<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.65<br>2.75|3.20<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|5.1|5.7|6.3|V| |Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>450|250<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|600|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|10.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|860|-|pF| |Output capacitance|_C_oes||-|60|-|| |Reverse transfer capacitance|_C_res||-|40|-|| |Gate charge|_Q_G|_V_CC=960V,_I_C=15.0A,<br>_V_GE=15V|-|92.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=22.0Ω,_R_G(off)=22.0Ω,<br>_L_σ=95nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns| |Rise time|_t_r||-|29|-|ns| |Turn-off delaytime|_t_d(off)||-|240|-|ns| |Fall time|_t_f||-|25|-|ns| |Turn-on energy|_E_on||-|0.70|-|mJ| |Turn-off energy|_E_off||-|0.55|-|mJ| |Total switchingenergy|_E_ts||-|1.25|-|mJ| V�2.1 2018-05-07 Datasheet 4 IKW15N120BH6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=15.0A,<br>_di_F_/dt_=500A/µs,<br>_L_σ=95nH,<br>_C_σ=67pF|-|340|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.83|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|8.3|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-55|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=22.0Ω,_R_G(off)=22.0Ω,<br>_L_σ=95nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns| |Rise time|_t_r||-|29|-|ns| |Turn-off delaytime|_t_d(off)||-|310|-|ns| |Fall time|_t_f||-|63|-|ns| |Turn-on energy|_E_on||-|0.95|-|mJ| |Turn-off energy|_E_off||-|1.10|-|mJ| |Total switchingenergy|_E_ts||-|2.05|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=15.0A,<br>_di_F_/dt_=500A/µs,<br>_L_σ=95nH,<br>_C_σ=67pF|-|540|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|1.75|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|11.3|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-42|-|A/µs| V�2.1 2018-05-07 Datasheet 5 IKW15N120BH6 **==> picture [471 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 100 60<br>not for linear use VGE=20V<br>17V<br>Perce 50 15V e/a<br>A 13V Sy<br>. EI on) 11V SA<br>40<br>ee 9V Sh ||<br>7V<br>NY Zee<br>© 10 rN © 30 ai<br>re a rt<br>5 Sth & AW<br>20<br>rs)|— FREECocco O* a) INKae<br>10<br>1 0<br>1 10 100 1000 0 1 2 3 4 5 6<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE souiecrom ewirren VOLTAGE [V]<br>Figure 1. Forward bias safe operating area Figure 2. Typical output characteristic<br>( D =0, T vj 175°C; V GE =15V, pulse width ( T vj=25°C)<br>limited by T vjmax)<br>60 60<br>VGE=20V Tvj=25°C<br>Tvj=175°C<br>17V<br>iW ee Y<br>50 15V 50<br>13V<br>e| 11V \W4e\| f f<br>40 40<br>9V<br>7V<br>PLWH 30 30<br>LA LF<br>20 20<br>| i) Ae<br>10 10<br>Fo Ly<br>| FO ave<br>0 A 0 YA<br>0 1 2 3 4 5 6 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Typical ( _T_ vj=175°C) Figure 4. Typical ( _V_ CE=20V) 6 Datasheet 2018-05-07 IKW15N120BH6 **==> picture [471 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0 1000 aa<br>a<br>IC=7.5A<br>IC=15A<br>3.5 | IC=30A } p a a aT<br>S a ee eee eee<br>S py td(off) ee<br>tf<br>3.0 td(on)<br>tr<br>:ag on — E<br>i 7 er<br>100<br>7A)< 2.5 n ae d<br>[a -— S p o<br>bu F a ee es ee ed<br>2.0<br>E OQ ee er ee<br>:ppee<br>1.5<br>Bp ee<br>10<br>|5 7 ERa<br>Pf5 1.0 a a<br>Oa pT<br>0.5<br>a a<br>0.0 1<br>25 50 75 100 125 150 175 0 5 10 15 20 25 30<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 5. ( _V_ GE=15V) Figure 6. (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =15/0V, _R_ G=22 Ω , Dynamic test Figure E) **==> picture [474 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aa<br>td(off) I td(off) po<br>tf tf<br>1000 H ttd(on)r a —<— | ttd(on)r eeeeee<br>ee ee ce E— —<br>ee ee ee Po; [T] [E]<br>a ee<br>==<br>--<br>g 100<br>=<br>ee 100 eeee<br>= ees OS — a<br>2) es p) _<br>2 ENeee 2 te<br>ee ee ee<br>ep fp<br>L<br>10 10<br>0 20 40 60 80 100 120 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical switching times as a function of gate Figure 8. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=15/0V,<br>V GE =15/0V, I C =15A, Dynamic test circuit in I C =15A, R G=22 ,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 7 2018-05-07 IKW15N120BH6 **==> picture [492 x 699] intentionally omitted <==** **----- Start of picture text -----**<br> 7.0 5.0<br>typ.<br>min.<br>4.5<br>6.5 max.<br>Ww ,<br>2 = 4.0 f<br>EeaO 6.0 ~ =SAL (op)=E 3.5 EEEoffonts i//<br>> SK ~ HM v7<br>5.5<br>pL x —! 3.0 /<br>ocLu ONOs. 48 F E4<br>5.0 2.5<br>= = m™ _ %. Wi ; /<br>ke s Zz ce<br>= - NJ ON | 8 y ;<br>WW ~ oN U) 2.0 7<br>4.5<br>E ~ ~ 4 2 Y Sa<br>uw \ i= 1.5 4 Zo<br>i= 4.0 ~ ‘ ps | | UY) Le<br>5<br>O ‘ “XN ) %. 1.0 7é =a<br>¢<br>3.5<br>fp\ 0.5 ean“ Za<br>“ a<br>3.0 0.0<br>25 50 75 100 125 150 175 0 5 10 15 20 25 30<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 9. Gate-emitter threshold voltage as a function Figure 10. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.5mA) (inductive load, T vj =175°C, V CE=600V,<br>V GE =15/0V, R G=22 Ω , Dynamic test circuit in<br>Figure E)<br>4.5 2.5<br>4.0<br>p> [ttt] eo Ee<br>a 3.5 Eoff a ae 2.0 Eoff o<br>Eon Eon<br>Ets Ets<br>Ww Y Ww<br>o ) 3.0 ea i o ) -<br>?<br>g<br>aa aa ne 1.5 = ae<br>2.5<br>a a a7 o or<br>2.0<br>i)Zz: 7“ : a “Jei)Zz 1.0 | |teLS —|<br>1.5<br>e_<br>1.0<br>0.5<br>0.5<br>0.0 0.0<br>0 20 40 60 80 100 120 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=15/0V,<br>V GE =15/0V, I C =15A, Dynamic test circuit in I C =15A, R G=22 , Dynamic test circuit in<br>Figure E) Figure E)<br>E<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 8 2018-05-07 IKW15N120BH6 **==> picture [471 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 800<br>Tvj=25°Cvj=25°C=25°C<br>Tvj=175°Cvj=175°C=175°C<br>o 7? 700 \ ee||<br>2.5<br>Eoff<br>Eon 600<br>Lu Ets “* Ww<br>2.0<br>D ma a. \<br>fo) wa o 500 \<br>—! 2 (a)<br>a<br>1.5 400<br>ffZzgbo < weeszag YS<br>300<br>1.0<br>© |pa : 200 SIDS<br>0.5<br>100<br>0.0 0<br>400 450 500 550 600 650 700 750 800 0 20 40 60 80 100 120<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] R G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical diode current slope as a function<br>function of collector emitter voltage gate resistor<br>(inductive load, T vj =175°C, V GE=15/0V, (inductive load, V CE =600V, V GE=0/15V,=0/15V,<br>I C =15A, R G=22 , Dynamic test circuit in I C =40A, Dynamic test circuit in Figure E)<br>Figure E)<br>16 y, 7 1E+4 a a<br>V CC Cies<br>— = 240V 7 H a ee ee ee<br>V CC Coes<br>14 —- =960V y, II Cres p -—}o<br>Ss 12<br>Q / — 1000 N<br>E LL Se<br>I 10 7 [o" ———————————<br>fo)> | US / =Ww aeS ee es<br>Pp (S) a ee ee ee<br>ul 8 =2 ia<br>i O<br>WW = a<br>6<br>bu < VN<br><x oO 100 aON<br>. 4 SSPoea SS |<br>ee ee ee ee ee<br>2<br>a<br>0 10<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=15A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>/dt<br>F<br>E di<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> **==> picture [233 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br>Tvj=25°Cvj=25°C=25°C<br>Tvj=175°Cvj=175°C=175°C<br>700 \ ee||<br>600<br>Ww<br>a. \<br>o 500 \<br>(a)<br>400<br>zagag YS<br>300<br>: SIDS<br>200<br>100<br>0<br>0 20 40 60 80 100 120<br>R G , GATE RESISTOR [ Ω ]<br>Figure 14. Typical diode current slope as a function<br>gate resistor<br>(inductive load, V CE =600V, V GE=0/15V,=0/15V,<br>I C<br>/dt<br>F<br>di<br>**----- End of picture text -----**<br> 9 Datasheet 2018-05-07 IKW15N120BH6 **==> picture [489 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> < 90 6.05.5 P| | ft<br>Lu 80 et<br>a Ww<br>a= 5.0<br>:<br>ae <gpZ 4.5 IN .<br>70<br>4.0<br>E5<br>3 60 2 3.5 ~<br>O [4]<br>:<br>beO fe):= 3.0 a><br>= op)<br>50<br>2.5<br>40 2.0<br>12.0 12.5 13.0 13.5 14.0 14.5 15.0 12.0 12.5 13.0 13.5 14.0 14.5 15.0<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current as a Figure 18. Short circuit withstand time as a function of<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 500V, T vj 150°C) ( V CE 500V, start at T vj ≤ 150°C)<br>I C(SC) t SC<br>**----- End of picture text -----**<br> **==> picture [472 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>_ | YT TN TM CHI Le<br>= |E e MS 1 SSC Alyy “il<br>><br>A<br>0.1<br>D=0.5 D=0.5<br>2<br>0.2 0.2<br><A SSestiomes;ETtussertii ashy ett em oe 2 Se cei” Aa ST ai<br>6 0.1 t @ O 0.1<br>” CONT== amrTM 0.05 wn SE a 0.05 LA<br>0.01<br>m= et<br>4 SSS 0.02 4 0.1 SS fA: 0.02<br>xt= CERCAFCHMECCe 0.01 xt WwW / en > H 0.01<br>ii Tenet tT, single pulse PEO = See ieeae ge Rn single pulse<br>me TTIA 00TTT0TANT TTT TTT 1 | a Tf rm<br>0.001<br>b SS aeere | ee a Ze<br>= TT a A =<br>a)eCero e CC ATE E CC iadeT| 0.01 sts cece/ Walle a *E<br>eT 1E-4 ATLITE | © PARSE :<br>Seat i: set 1 aie 2 eee 3 et Sew 4 RL 5 En con i: 1 2 3 4 EH 5<br>ri[K/W]: 0.1688123 0.2736341 0.2844153 0.01358942 2.1E-3 ri[K/W]: 0.01879075 1.08659 0.9288417 0.3514893 0.02098241<br>τ i[s]: 3.1E-4 2.9E-3 0.01523587 0.2101353 2.475492 τ i[s]: 4.2E-5 3.9E-4 2.7E-3 0.01706908 0.1950848<br>LY a | / Wy TTT TT TT TT TTT TTT<br>1E-5 0.001<br>1E-8 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br> > Figure 19. IGBT ( _D_ = _t_ p/T) Figure 20. ( _D_ = _t_ p/T) 10 Datasheet 2018-05-07 IKW15N120BH6 **==> picture [475 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 900 \ es 2.0 es<br>Tvj=25°C, IF = 15A Tvj=25°C, IF = 15A<br>\ T a vj=175°C, IF = 15A T a vj=175°C, IF = 15A<br>800 1.8<br>- \ 2<br>2 \ Ww<br>= 700 \ O< 1.6<br>-7<br>><br>in 600 N Oo 1.4<br>: » ><br>N<br>Oo &<br>o<br>500 1.2<br>Ww < “AN ~ ~ i<br>ow 400 NN 1.0<br>| 300 anaaa 0.8 | Sepf de<br>200 0.6<br>100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> Figure 21. ( _V_ R=600V) Figure 22. ( _V_ R=600V) **==> picture [474 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 14 es - 0 es<br>Tvj=25°C, IF = 15A Tvj=25°C, IF = 15A<br>a Tvj=175°C, IF = 15A Tvj=175°C, IF = 15A<br>| Z N R<br>12 | -20<br><= 7 > NX<br>5 / z<br>Ww 7 — aN<br>10 -40<br>e z _ \<br>Oo2 // i S= \ XN<br>a fe)<br>: ‘ a E<br>8 -60<br>3<br>gfo ‘ \ Ss<br>WwW ®<br>7p)ow‘ 6 ’ :fo ao]2; -80 \ \ ><br>> .<br>mf<br>Ww WA a)<br>4 -100<br>2 -120<br>100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br> Figure 23. Typical function ( _V_ R=600V) Figure 24. ( _V_ R=600V) 11 Datasheet 2018-05-07 IKW15N120BH6 **==> picture [469 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0 60<br>Tj=25°C, IF = 15A Tvj=25°C<br>0.9 Tj=175°C, IF = 15A Tvj=175°C<br>EO | = /<br>50<br>0.8<br>Sy & PT TT} | ——<br>g<br>0.7<br>a fo en jtaeT <<br>40<br>ef dg f,<br>> 0.6 WW<br>oruwpfZz 0.5 | a=)ro) 30 /<br>Ww Q“<br>0.4<br>I ee ee<br>20<br>pe 0.3 |<br>Et LTT<br>0.2<br>oO T |<br>10<br>0.1<br>2 0.0 aaa 0 T TA TTT<br>100 200 300 400 500 600 700 800 0 1 2 3 4 5 6<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Figure 25. Typical reverse energy losses as a function Figure 26. Typical diode forward current as a<br>of diode current slope of forward voltage<br>( V R=600V)<br>I F<br>E<br>**----- End of picture text -----**<br> **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 4.5<br>IF=7.5A<br>IF=15A<br>IF=30A<br>4.0<br>3.5<br>Ww<br>ke<br>3.0<br>><br>Q<br>aa<br><x<br>I 2.5 [napa<br>x<br>(e)<br>LL<br>2.0<br>1.5<br>1.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 27. 12 Datasheet 2018-05-07 IKW15N120BH6 **==> picture [86 x 38] intentionally omitted <==** Sixth�generation,�high�speed�soft�switching�series ## **Package Drawing PG-TO247-3** 13 V�2.1 2018-05-07 Datasheet IKW15N120BH6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.1 2018-05-07 Datasheet IKW15N120BH6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Revision�History** IKW15N120BH6 ## **Revision:�2018-05-07,�Rev.�2.1** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2018-05-07|Final data sheet| 15 V�2.1 2018-05-07 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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