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IKQ75N120CT2XKSA1
IGBT, 150 A, 1.75 V, 938 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:938W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 938W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 6.92 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IKQ75N120CT2 ## TRENCHSTOP[TM] ce(sat) ce(sat) ## **Features:** **==> picture [415 x 83] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>2 technology offers:<br>CE(sat) , 1.75V at nominal current<br>circuit withstand time at T vj=175°C<br>capability due to positive temperature<br>G<br>V CE(sat) E<br>**----- End of picture text -----**<br> **==> picture [221 x 55] intentionally omitted <==** **----- Start of picture text -----**<br> *« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt<br>Applications:<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKQ75N120CT2|1200V|75A|1.75V|175°C|K75MCT2|PG-TO247-3-46| Datasheet www.infineon.com 2017-05-02 IKQ75N120CT2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.2 2017-05-02 Datasheet IKQ75N120CT2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=137°C|_I_C||150.0<br>75.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||300.0|A| |Turn off safe operating area<br>_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||300.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||150.0<br>75.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||300.0|A| |Gate-emitter voltage|_V_GE||±20|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=137°C|_P_tot||938.0<br>237.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,1)<br>junction - case|_R_th(j-C)||-|-|0.16|K/W| |Diode thermal resistance,1)<br>junction - case|_R_th(j-C)||-|-|0.28|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. 3 V�2.2 2017-05-02 Datasheet IKQ75N120CT2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.75<br>2.30|2.15<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.85|2.30<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.88mA,_V_CE=_V_GE|5.1|5.8|6.5|V| |Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C<br>_T_vj=175°C|-<br>-|-<br>-<br>5000|450<br>-<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|27.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4856|-|pF| |Output capacitance|_C_oes||-|505|-|| |Reverse transfer capacitance|_C_res||-|290|-|| |Gate charge|_Q_G|_V_CC=960V,_I_C=75.0A,<br>_V_GE=15V|-|370.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=6.0Ω,_R_G(off)=6.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|37|-|ns| |Rise time|_t_r||-|49|-|ns| |Turn-off delaytime|_t_d(off)||-|326|-|ns| |Fall time|_t_f||-|46|-|ns| |Turn-on energy|_E_on||-|6.70|-|mJ| |Turn-off energy|_E_off||-|4.10|-|mJ| |Total switchingenergy|_E_ts||-|10.80|-|mJ| V�2.2 2017-05-02 Datasheet 4 IKQ75N120CT2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=75.0A,<br>_di_F_/dt_=800A/µs|-|320|-|ns| |Diode reverse recoverycharge|_Q_rr||-|5.10|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|29.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-300|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=6.0Ω,_R_G(off)=6.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|35|-|ns| |Rise time|_t_r||-|50|-|ns| |Turn-off delaytime|_t_d(off)||-|460|-|ns| |Fall time|_t_f||-|103|-|ns| |Turn-on energy|_E_on||-|10.30|-|mJ| |Turn-off energy|_E_off||-|9.10|-|mJ| |Total switchingenergy|_E_ts||-|19.40|-|mJ| |**DiodeCharacteristic,at****_T_vj=175°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=75.0A,<br>_di_F_/dt_=800A/µs|-|600|-|ns| |Diode reverse recoverycharge|_Q_rr||-|13.30|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|42.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-125|-|A/µs| V�2.2 2017-05-02 Datasheet 5 IKQ75N120CT2 TRENCHSTOP[TM] ce(sat) **==> picture [474 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> PtCCLTETT 1000900 Pf of<br>100<br>ee ff]<br>Se 800 Ne<br>not for linear use<br>£ Pe e 700<br>6 Co oie = \<br>eB PN<br>600<br>10<br>B T § IN<br>500<br>G: |PL TUTTI TTTTTT |g 400300 awPty TN<br>SU 1 I EF * :<br>PeCTI CIEI CEI 200100 Pf ff | \<br>0.1 a a 0 P| | |tN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br> **==> picture [469 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 160 300<br>VGE=20V<br>m e 270 17V Ne<br>140<br>15V<br>240<br>120 PON. BRSSN44-> 13V<br>210<br>11V<br>ONT ESS<br>100 9V<br>180<br>f - et] XN<br>7V<br>80 150<br>et oF | 8 PAN<br>5 S \\ W/<br>120<br>60<br>ee ee Ganee<br>90<br>Pf payee<br>40<br>60<br>POC<br>20<br>30<br>N) FeppASeeeb<br>ee S S S<br>0 e 0 n A nn ee<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br> 6 Datasheet 2017-05-02 IKQ75N120CT2 ce(sat) ## TRENCHSTOP[TM] **==> picture [474 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>VGE=20V Tvj = 25°C<br>270 17V 270 Tvj = 175°C<br>15V<br>240 NEY. a 240 | = | i | ///<br>/<br>13V<br>NNEEEEP? e e<br>210 210<br>11V<br>Zzz | \\NEEE 2 Zzce | | |) [sy]<br>9V<br>180 180<br>=)ae 7V QQ 44 BPD /<br>150 150<br>(e)3 | WOp ee(e)<br>B 120 LENO] eg 120 Le<br>: Vw |<br>90 90<br>. . /<br>: ABSlL} 3 |<br>60 60<br>Pee P| |x | |<br>30 30<br>fee || Yt ft<br>a Vann<br>0 0<br>0 1 2 3 4 5 4 6 8 10 12 14 16<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>4.5 1000<br>IC = 38A a<br>IC = 75A re a eeeee<br>4.0 IC = 150A<br>_ = | a ee<br>td(off)<br>ee 3.5 e e tf<br>td(on)<br>tr<br>3.0 100<br>=poe= = Te£ | EE rt<br>o - uw a a<br>2.5<br>tut “7 = a ce es<br>| - a es ee ee ee<br>2.0<br>i [|| far = esee<br>peop 1.5 TT ye 10 [et<br>o ee — ee — ” a<br>Ss}ee. 1.0 aa eeee ee<br>0.5<br>ee ee eee<br>ee<br>0.0 1<br>25 50 75 100 125 150 175 0 30 60 90 120 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> _V_ GE =0/15V, _r_ G=6 Ω Figure E) Datasheet 7 2017-05-02 IKQ75N120CT2 ## TRENCHSTOP[TM] ce(sat) **==> picture [230 x 299] intentionally omitted <==** **----- Start of picture text -----**<br> td(off)<br>tf<br>1000 td(on) + |<br>tr<br>' se<br>epee<br>re ee<br>gL}F| |} | |<br>g<br>ee 100<br>e ee a ec eee eee<br>=a peea a aeSEIeeimme<br>a a a<br>HE<br>a<br>10<br>0 5 10 15 20 25 30 35 40<br>r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of<br>resistor<br>t<br>**----- End of picture text -----**<br> **==> picture [151 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, I C =75A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>td(off)<br>a | t a f poa<br>I| td(on) are eeeeee eee e e<br>tr<br>| ee ee<br>P r<br>ee<br>F<br>S 100 a a a<br>el<br>a ee ee ee<br>S eee= ee<br>(OO WN NNN OOOO OOOO EI<br>ES<br>10<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br> Figure 10. **==> picture [154 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, V CE =600V, V GE=0/15V,<br>I C =75A, r G=6 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br> **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 8 60<br>typ. Eoff<br>min. Eon<br>max. Ets<br>7<br>50<br>~ Pree ‘=<br>O 6 > ~ — /<br>> ~~ i) /<br>= : LLL .<br>40<br>9 ~e WW /<br>~~ ~L S / /<br>fe) ~~ he 2 ;<br>5 — = = > / J<br>« ~ ~ ~S i 30 / Z<br>o 4 rm ~“ Ww ;<br>20<br>uuLui 3 NN) == //<br>Ee a Pa /<br>é | Oe<br>10<br>2<br>1 0<br>25 50 75 100 125 150 175 0 30 60 90 120 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Gate-emitter of junction ( _I_ C=1,875mA) Figure 12. (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _r_ G=6 Ω , Dynamic test Figure E) 8 Datasheet 2017-05-02 IKQ75N120CT2 ## TRENCHSTOP[TM] ## ce(sat) **==> picture [474 x 341] intentionally omitted <==** **----- Start of picture text -----**<br> 40 20<br>Eoff Eoff<br>Eon 18 Eon<br>35 Ets Ets<br>16<br>& 30 ° & a<br>nm a nm 14<br>7) a“ 7) Ute<br>op) a (dp) “7<br>25<br>- ea 4 12 4<br>2 “ 25 a<br>w Pa a x =<br>Lu 20 a uw 108 = eS<br>15<br>E- 6<br>: 7 oS] 8 bee as<br>10<br>4<br>5<br>2<br>0 0<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =75A, Dynamic test circuit in I C =75A, r G=6 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [474 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 30 16 P|<br>Eoff V CC<br>— = 240V / yo<br>Eon V CC<br>Ets ve 14 _-- a= 960V /<br>25<br>Fz “a YY<br>12<br>(op) a Ww<br>DQ 20 P aa Q< / /<br>e) “ a 10<br>i a fe)<br>ow a o<br>LU 15 ZF - = 8<br>Zz oc a— =<br>Lu ra = — S<br>Zz ao Ww 6<br>10<br>4<br>5<br>2<br>0 0<br>400 500 600 700 800 0 50 100 150 200 250 300 350 400<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> Figure 15. Figure 16. Typical ( _I_ C=75A) **==> picture [154 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =175°C, V GE=0/15V,<br>I C =75A, r G=6 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br> 9 Datasheet 2017-05-02 IKQ75N120CT2 ## TRENCHSTOP[TM] ## ce(sat) **==> picture [471 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>Cies<br>Coes<br>Cres<br>- 500 /<br>1E+4 ely e titty<br>a<br>a a ee eee<br>a aes oe<br>rs a a 400 7<br>re eeSe<br>2 fo) dE PY<br>5 ON 5) 300 ‘<br>2 IA Ae<br>1000<br>Ee ee es<br>ce. PpoONSSSTSS aeg 200 ALI“<br>ae ee os LZ<br>pa aL<br>100<br>~~}} fers Yn Peer<br>100 0<br>0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 600V, T vj 175°C)<br>C<br>I C(SC)<br>**----- End of picture text -----**<br> **==> picture [469 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>man<br>PP 0.1 wezaatl |<br>40 LLL > Sesriem Se ea<br>= AL<br>35 D = 0.5<br>s fe A Ty 0.2 LCT<br>0.1<br>30<br>Z no —T Af<br>: 7A 0.05<br>0.01<br>0.02<br>25<br>= S fe 0.01 |<br>= rd THM eat CM single pulse TT<br>20<br>: | i mAiiee er manliliegd Com<br>©3 15 SENG| F le a<br>0.001<br>bY @ A<br>fe) N 3 ERIN PARA) cA 00 001<br>TrnO 10 Py} NEE]> a Ey 2sE FEoTa A| ani(tiill<br>. SN , AN<br>5 Poa AE FC T FTIE oomchim, oomco=teieeoo_ Ill<br>i: 1 2 3 4 5<br>ri[K/W]: 0.02275 0.047736 0.08788 2.0E-3 2.7E-4<br>τ i[s]: 3.8E-4 2.7E-3 0.019881 0.505051 12.95671<br>ee PA/ || eeaa<br>0 1E-4<br>10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal resistance<br>gate-emitter voltage ( D = t p/T)<br>( V CE 600V, start at T vj ≤ 175°C)<br>t SC c)th(j-<br>Z<br>**----- End of picture text -----**<br> 10 Datasheet 2017-05-02 IKQ75N120CT2 TRENCHSTOP[TM] ce(sat) **==> picture [482 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>EY —_____—__— Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A<br>co aa ac 900<br>= 0.1 Comesll a| y<br>D = 0.5<br>800<br>2 CCICI “Cera 0.2 ny \<br>| 0.1 \<br>LUa eeLo 0.05 eee >es 700 :<br>0.02<br>gee 0.01 eran 70 \<br>0.01<br>ESwd pteeetere | O5 600 \ .<br>Ww aa |,ee single pulse [TT ifoe NY \ \<br>E Se lu 500 w~ \<br>b Ai x .<br>0.001<br>Zz O a -- Z&~ 400 N<br>s Pe Ri Re i wy<br>E (| 1 tTiM<br>eg erA me 300 =C—_<br>i: 1 2 3 4 5<br>ri[K/W]: 0.01104 0.10889 0.1573 2.8E-3 3.0E-4<br>τ i[s]: 3.6E-4 2.7E-3 0.01681 0.44863 12.11241<br>1E-4 APA eeee | 200 Py yf fy<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 400 500 600 700 800 900 1000<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 21. ( _D_ = _t_ p/T) Figure 22. ( _V_ R=600V) **==> picture [476 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 16 50<br>Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A Tvj = 175°C, IF = 75A<br>14<br>7<br>Ed | 40 SE ane<br>12<br>: poe<br>10<br>é eee<br>30<br>SPp oO> 7<br>Q: 8 e)Boea<br>20<br>uw 6 WwW<br>ose 4 =—— eee<br>10<br>2 P| | tt<br>0 0<br>400 500 600 700 800 900 1000 400 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br> Figure 23. Typical function ( _V_ R=600V) Figure 24. ( _V_ R=600V) 11 Datasheet 2017-05-02 IKQ75N120CT2 ce(sat) ## TRENCHSTOP[TM] **==> picture [466 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 0 300<br>Tvj = 25°C, IF = 75A Tvj = 25°C<br>Tvj = 175°C, IF = 75A 270 Tvj = 175°C<br>-50 Ee= Ji] Bouye<br>240 a / ;<br>my<br>ia -100 = ~ eee=< 210<br>-150<br>©o RN \ \ ra 180 / /<br>et2 ooN UN a)| EL<br>-200 150<br>& \ \ O<br>% a / /<br>g < 120 /<br>o -250 \ aS |<br>:: eLTT 90 TL TT AR<br>-300<br>60<br>TTR<br>-350<br>30<br>NN TA<br>pt BaP Aneee<br>-400 0<br>S | E a<br>400 500 600 700 800 900 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Figure 25. Typical diode peak rate of fall of reverse Figure 26. Typical diode forward current as a<br>recovery current as a function of diode of forward voltage<br>current slope<br>( V R=600V)<br>3.5<br>IF = 38A<br>IF = 75A<br>IF = 150A<br>3.0<br>2.5<br>Ww<br>ke<br>I 2.0<br>O<br>><br>Q<br>1.5<br>LL<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt I F<br>rr<br>dI<br>F<br>V<br>**----- End of picture text -----**<br> Figure 27. 12 Datasheet 2017-05-02 IKQ75N120CT2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT ## **Package Drawing PG-TO247-3-46** **==> picture [174 x 343] intentionally omitted <==** **==> picture [52 x 258] intentionally omitted <==** **==> picture [357 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663<br>EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br> 13 V�2.2 2017-05-02 Datasheet IKQ75N120CT2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.2 2017-05-02 Datasheet IKQ75N120CT2 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT ## **Revision�History** IKQ75N120CT2 ## **Revision:�2017-05-02,�Rev.�2.2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2017-04-26|Final data sheet| |2.2|2017-05-02|Update figure 7| 15 V�2.2 2017-05-02 Datasheet ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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