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IKQ75N120CS6XKSA1
IGBT, 150 A, 1.85 V, 880 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:880W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pi
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT6
- Power Dissipation: 880W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.45 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IKQ75N120CS6 **==> picture [474 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> High speed soft switching TRENCHSTOP TM _ IGBT 6 in Trench and Fieldstop<br>technology copacked with soft and fast recovery anti-parallel diode<br>Features: C<br>1200V TRENCHSTOP TM _ IGBT6 technology offering:<br>* High efficiency in hard switching and resonant topologies<br>¢ Easy paralleling capability due to positive temperature<br>coefficient in V CEsat G<br>« Low EMI<br>E<br>* Low Gate Charge Q g<br>¢ Very soft, fast recovery full current anti-parallel diode<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models: @,,<br>http://www.infineon.com/igbt/ zap<br>Applications:<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKQ75N120CS6|1200V|75A|1.85V|175°C|K75MCS6|PG-TO247-3-46| Datasheet www.infineon.com 2018-08-07 IKQ75N120CS6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.2 2018-08-07 Datasheet IKQ75N120CS6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||150.0<br>75.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||300.0|A| |Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||300.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||150.0<br>75.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||300.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤0.5µs,_D_<0.001)|_V_GE||±20<br>25|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤500V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||880.0<br>440.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.17|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.41|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 3 V�2.2 2018-08-07 Datasheet IKQ75N120CS6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.85<br>2.15<br>2.25|2.15<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.10<br>2.15|2.20<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=3.50mA,_V_CE=_V_GE|5.1|5.7|6.3|V| |Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>3500|1600<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|600|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|60.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4900|-|pF| |Output capacitance|_C_oes||-|360|-|| |Reverse transfer capacitance|_C_res||-|225|-|| |Gate charge|_Q_G|_V_CC=960V,_I_C=75.0A,<br>_V_GE=15V|-|530.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=4.0Ω,_R_G(off)=4.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|34|-|ns| |Rise time|_t_r||-|44|-|ns| |Turn-off delaytime|_t_d(off)||-|300|-|ns| |Fall time|_t_f||-|31|-|ns| |Turn-on energy|_E_on||-|5.15|-|mJ| |Turn-off energy|_E_off||-|2.95|-|mJ| |Total switchingenergy|_E_ts||-|8.10|-|mJ| V�2.2 2018-08-07 Datasheet 4 IKQ75N120CS6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=75.0A,<br>_di_F_/dt_=820A/µs,<br>_L_σ=70nH,<br>_C_σ=67pF|-|440|-|ns| |Diode reverse recoverycharge|_Q_rr||-|4.70|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|27.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-95|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=4.0Ω,_R_G(off)=4.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|31|-|ns| |Rise time|_t_r||-|45|-|ns| |Turn-off delaytime|_t_d(off)||-|370|-|ns| |Fall time|_t_f||-|58|-|ns| |Turn-on energy|_E_on||-|7.35|-|mJ| |Turn-off energy|_E_off||-|5.30|-|mJ| |Total switchingenergy|_E_ts||-|12.65|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=75.0A,<br>_di_F_/dt_=1020A/µs,<br>_L_σ=70nH,<br>_C_σ=67pF|-|765|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|12.50|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|45.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-115|-|A/µs| V�2.2 2018-08-07 Datasheet 5 IKQ75N120CS6 **==> picture [471 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>a a ee VGE = 20V /<br>17V<br>100 ee ( 250 15V ae<br>not for linear use<br>13V<br>= P AT Pe | 200 11V \ / /<br>9V<br>2 LAL Fn TTT | 2 SY<br>10 7V<br>150<br>Pi 5 |ANZ<br>Pt [PP]<br>O et i] § \W/<br>| [EOI] Tn | 9|g 100 KY)<br>SU 1 UT | 8 VX<br>50<br>a a Ne PAVY \<br>0.1 0<br>1 10 100 1000 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area Figure 2. Typical output characteristic<br>( D =0, T vj 175°C; V GE =15V, pulse width ( T vj=25°C)<br>limited by T vjmax)<br>300 300<br>VGE = 20V Tvj = 25°C<br>Tvj = 175°C<br>17V<br>Jf Pee<br>250 15V 250<br>13V<br>11V<br>200 200<br>9V<br>7V<br>PE ANE<br>150 150<br>8 BNW 7Z| 8 Hi<br>nue Zee eeeeeien<br>100 100<br>| f pp<br>50 50<br>i” ean |<br>F—— |<br>0 A7 | | 0<br>0 1 2 3 4 5 6 0 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Typical ( _T_ vj=175°C) Figure 4. Typical ( _V_ CE=20V) 6 Datasheet 2018-08-07 ## IKQ75N120CS6 **==> picture [474 x 699] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5 jt 1000 aa ase<br>IICC = 37.5A = 75A pei7“7 aaPONaes ee<br>IC = 150A<br>S ae a a e ee ee ee ee<br>S 3.0 Ti ue i pers ttd(off)f Oe<br>td(on)<br>oe wea _ tr<br>i2 o ae TT £ 100 ee a F sef ft<br>< ae n es ee ee orc<br>(¢p) 2.5 a im SS ee<br>[a = a ee es ee<br>bu F se<br>= _ --7 g a ee ee eee<br>a 2.0 — -_ e-bo =se jot? et tT | |<br>FE _- = :<br>10<br>|5 7 a a es<br>5<br>Oa 1.5 _ errs a ee<br>1.0 1<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 5. Typical collector-emitter saturation voltage as Figure 6. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,<br>V GE =15/0V, R G=4 Ω , Dynamic test circuit in<br>Figure E)<br>1000 aa 1000<br>I td(off) td(off)<br>| a ee ee ee ee eee I po<br>tf tf<br>1 a ee ee ee | a ee ee ee<br>td(on) td(on)<br>| tr iieeeee eee || tr aeeeeee ee ee<br>Pa et E ——_| |ee<br>iS iS<br>ee ee e e<br>==<br>--<br>g 100 a 100<br>=po = a ee<br>EeO a ee ee ee ee ee ee eese<br>= eea a aeeee eee = a eeeees et<br>es i es cae nce Dc coctcceees cece nO eee cence ee<br>10 10<br>0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical switching times as a function of gate Figure 8. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=15/0V,<br>V GE =15/0V, I C =75A, Dynamic test circuit in I C =75A, R G=4 , Dynamic test circuit in Figure<br>Figure E) E)<br>t<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 7 2018-08-07 IKQ75N120CS6 **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 6.5 35<br>oc Ss.SA<br>6.0 30<br>Lu SS v<br>Eoff<br>F ~‘s £ /<br>Eon<br>> 5.5 SS uu 25 Ets /<br>Q a 7) 1<br>oO < 3<br>PLO5 5.0 ™ | ‘s > 20 /<br>Ww N SS (o) , 7<br>ck sXN xa it a 7<br>w ~ on Zz ; 7<br>4.5 15<br>uw N N Ww ¢<br>E ~ \ ZoO “oy<br>S NX\x / 7<br>i<br>, 4.0 10<br>5 typ. »~ E ¢ 7 4<br>min.<br>- E E max. SY?> . o7 a<br>“|e e<br>3.5 5<br>a7<br>3.0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 9. Gate-emitter of junction ( _I_ C=3.5mA) Figure 10. (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =15/0V, _R_ G=4 Ω ,Dynamic test Figure E) **==> picture [474 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 20 14<br>18<br>a “a — 12 ? <<br>€ 16 EEoffon a“ € EEoffon a<br>Lu Ets ae Lu Ets oc<br>cp)7) of ie cp)7) 10 7? 4°<br>e) 14 ¢ oe) “7<br>- y —! Prom<br>> Pat > 7<br>O 7 O -*<br>a at a “7<br>Wi 12 Wi 8<br>ii ” ii<br>Zz 10 Jo Zz -—<br>I -~ 5 6 _ =_—<br>E “7 E al<br>= - = -—<br>8<br>° | * 4 a<br>6<br>Bae<br>4 2<br>0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=15/0V,<br>V GE =15/0V, I C =75A, Dynamic test circuit in I C =75A, R G=4 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> 8 Datasheet 2018-08-07 IKQ75N120CS6 **==> picture [489 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> 18 1600 LY<br>¢of Tvj = 25°C<br>Tvj = 175°C<br>16<br>1400<br>wo; |<br>Eoff<br>(op) ; 14 EEonts “ra <: 1200<br>O 12<br>aa) ¢ c n.<br>a 1000<br>ow , 7 nm<br>Z 10 “ a na >NX<br>S 8 ° oa 800 NY<br>E= |. - y Ca 600 ~ ™~_<br>= 6 7 — | ° ~<br>pe TT 400<br>4<br>2 200<br>400 450 500 550 600 650 700 750 800 0 2 4 6 8 10 12 14 16<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] R G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical diode current slope as a function of<br>function of collector emitter voltage gate resistor<br>(inductive load, T vj =175°C, V GE=15/0V, (inductive load, V CE =600V, V GE=0/15V,<br>I C R G=4=4 I C<br>/dt<br>F<br>E di<br>**----- End of picture text -----**<br> _I_ C =75A, _R_ G=4=4 Figure E) **==> picture [471 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 16 Lt<br>V CC Cies<br>V CC =960V / 1E+4 Coes<br>14 =—- a1a FE H [L] Cres [_—— [t] |<br>/ 7 es<br>/ a<br>im> 12 / ) / Aeea|TT<br>< ra \<br>10<br>5 S, 1000 \<br>a<br>w J Zz EN Dn Ss se<br>iE 8 PF | <E eea Oea ia ee ee<br>= o a a ee ee<br>ai 6 Sf<br>a) 100<br>5~ ~ fee| | ft |<br>4 a ss<br>aa<br>aeeee ee<br>2 a a ee ee<br>0 10<br>0 100 200 300 400 500 600 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=75A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> 9 Datasheet 2018-08-07 IKQ75N120CS6 **==> picture [495 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 600 6.0<br>5.5<br>550<br>LuarwaS 500 —Ww=O 5.0<br>a Zz<br>8z 4.5<br>450<br>=<br>ro} =E 4.0 IN<br>E 400 5<br>32 3.5 ~<br>°a [a] Ss)<br>350<br>:% :5 a™<br>fe) = 3.0<br>= op)<br>300<br>2.5<br>250 2.0<br>12 13 14 15 12.0 12.5 13.0 13.5 14.0 14.5 15.0<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current as a Figure 18. Short circuit withstand time as a function of<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 500V, T vj 175°C) ( V CE 500V, start at T vj ≤ 175°C)<br>1<br>MoT |i ee TT<br>0.1<br>5= ETAseett | er|<br>5 Se aed D = 0.5 S| COM D = 0.5 ome CT<br>0.1<br>Eee 0.2 ls § Pelee 0.2<br>< eo Il<br>ap) 0.1 IE 2 ES 0.1 ae<br>2) -——— = 1A J ap) CEE a<br>a py Y qT 0.05 2 0.05 ergCT CTC<br>4 0.01 5!ABO a 1 7 A<br>0.02 0.02<br>_I SaRo ay<br>x Pr en I Wh<br>RS& 700227 =| 0.01 ott0 aAll asxa 0.01 aig 0.01 XI Hieyy ATE ST TT<br>single pulse single pulse<br>Wi MAA rm ‘l) wi Fe HE SHSEES EES ESE<br>© CATIA = =ES<br>E aati / L-ATT E LNT<br>a | all ae 0 A A<br>0.001<br>z | Pa Ro iy z Ry Ro<br>ATIC —-H & 0.001 SEH ~~ i<br>ReE. BEaVNACCTli G Vie, HG cottee I]WltI! E AI/| G odie HG contains in|<br>A CE I om oooh 7c o_o Poy<br>va A<br>i: 1 2 3 4 5 6 i: 1 2 3 4 5<br>id ri[K/W]: 7.4E-4 0.031224 0.033227 0.108076 5.3E-3 1.3E-3 a a es ri[K/W]: 0.08116 0.11422 0.20483 9.7E-3 1.8E-3 ||<br>τ i[s]: 3.4E-5 3.4E-4 2.9E-3 0.01786 0.227615 3.143017 τ i[s]: 3.2E-4 3.1E-3 0.0161 0.22001 2.7875<br>| | a | ee |<br>1E-4 1E-4<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>I C(SC) t SC<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br> > Figure 19. IGBT ( _D_ = _t_ p/T) Figure 20. ( _D_ = _t_ p/T) 10 Datasheet 2018-08-07 IKQ75N120CS6 **==> picture [476 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 900 14<br>Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A Tvj = 175°C, IF = 75A<br>800<br>- ~Q O 12 _---<br>_ ~ f=]<br>£2 ~~ UL<br>Lu ~ 0<br>= 700 —~~| <<br>> oO<br>10<br>><br>O 600 Oo<br>id im<br>fe)wi ia 8 Pt] tf<br>500<br>.<br>6<br>400 —™ “<br>300 4<br>400 600 800 1000 1200 1400 400 600 800 1000 1200 1400<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery time as a function Figure 22. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R=600V) ( V R=600V)<br>50 LE 0 LE<br>Tvj = 25°C, IF = 75A ——_ Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A Tvj = 175°C, IF = 75A<br>7Yc -20 7<br><x =<br>raE x3 -40 \ \<br>ocs 40 6 -60 \_\\<br>or Ke)<br>mm /<br>-80<br>2 / 8<br>uyiaO // x53 \\\<br>WwW ®Q -100 \ \<br>2 30 3<br>a| <<br>rt; . -120-140 eee<br>~<br>20 -160<br>400 600 800 1000 1200 1400 400 600 800 1000 1200 1400<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery current as a Figure 24. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=600V) current slope<br>t rr<br>rr<br>Q<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br> ( _V_ R=600V) 11 Datasheet 2018-08-07 IKQ75N120CS6 **==> picture [489 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 7 150<br>Tj=25°C, IF = 75A Tvj = 25°C<br>Tj=175°C, IF = 75A Tvj = 175°C<br>6 a ee ee<br>z= Tt eet = 120 /<br>3 5 — = /<br>ke<br>> ow 90<br>4<br>na =)<br>uwZz oO<br>19) ow }<br>3<br>Ozx= 60 }<br>5 [o]<br>2<br>= ee .<br>2 30<br>1<br>0 0<br>400 600 800 1000 1200 1400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I F<br>E<br>**----- End of picture text -----**<br> Figure 25. Typical of diode ( _V_ R=600V) Figure 26. **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>IF = 37.5A<br>IF = 75A<br>IF = 150A<br>3.0<br>=.<br>Lu<br><<br>ke 2.5<br>I<br>><br>Q<br>aa<br><x<br>Ss 2.0<br>rn<br>LL<br>1.5 ee ee<br>1.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 27. 12 Datasheet 2018-08-07 IKQ75N120CS6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Package Drawing PG-TO247-3-46** **==> picture [174 x 343] intentionally omitted <==** **==> picture [52 x 258] intentionally omitted <==** **==> picture [357 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663<br>EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br> 13 V�2.2 2018-08-07 Datasheet IKQ75N120CS6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.2 2018-08-07 Datasheet IKQ75N120CS6 **==> picture [86 x 38] intentionally omitted <==** ## Sixth�generation,�high�speed�soft�switching�series ## **Revision�History** IKQ75N120CS6 ## **Revision:�2018-08-07,�Rev.�2.2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2018-05-07|Final data sheet| |2.2|2018-08-07|Fig.5 and Fig.27 legend correction| 15 V�2.2 2018-08-07 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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