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IKQ75N120CH3XKSA1
IGBT, 150 A, 2 V, 938 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:938W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 938W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.55 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IKQ75N120CH3 **==> picture [469 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> Features: C<br>High speed H3 technology offers:<br>* High efficiency in hard switching and resonant topologies<br>¢ 10usec short circuit withstand time at T vj=175°C<br>¢ Easy paralleling capability due to positive temperature<br>G<br>coefficient in V CEsat E<br>« Low EMI<br>* Low Gate Charge Q G<br>¢ Very soft, fast recovery full current anti-parallel diode<br>¢ Maximum junction temperature T vjmax=175°C<br>¢ Pb-free lead plating; ROHS compliant @,,<br>*« Complete product spectrum and PSpice Models: 222, Cap<br>http://www.infineon.com/igbt/<br>**----- End of picture text -----**<br> ## **Applications:** |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKQ75N120CH3|1200V|75A|2V|175°C|K75MCH3|PG-TO247-3-46| Datasheet www.infineon.com 2017-06-09 IKQ75N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.2 2017-06-09 Datasheet IKQ75N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=134°C|_I_C||150.0<br>75.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||300.0|A| |Turn off safe operating area<br>_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||300.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||150.0<br>75.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||300.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=134°C|_P_tot||938.0<br>256.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,1)<br>junction - case|_R_th(j-C)||-|-|0.16|K/W| |Diode thermal resistance,1)<br>junction - case|_R_th(j-C)||-|-|0.28|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. 3 V�2.2 2017-06-09 Datasheet IKQ75N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.50|2.35<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.85|2.30<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.88mA,_V_CE=_V_GE|5.1|5.8|6.5|V| |Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>5000|450<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|26.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4856|-|pF| |Output capacitance|_C_oes||-|505|-|| |Reverse transfer capacitance|_C_res||-|290|-|| |Gate charge|_Q_G|_V_CC=960V,_I_C=75.0A,<br>_V_GE=15V|-|370.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=6.0Ω,_R_G(off)=6.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|34|-|ns| |Rise time|_t_r||-|47|-|ns| |Turn-off delaytime|_t_d(off)||-|282|-|ns| |Fall time|_t_f||-|29|-|ns| |Turn-on energy|_E_on||-|6.40|-|mJ| |Turn-off energy|_E_off||-|2.80|-|mJ| |Total switchingenergy|_E_ts||-|9.20|-|mJ| V�2.2 2017-06-09 Datasheet 4 IKQ75N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=75.0A,<br>_di_F_/dt_=600A/µs|-|370|-|ns| |Diode reverse recoverycharge|_Q_rr||-|5.10|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|25.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-170|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=6.0Ω,_R_G(off)=6.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns| |Rise time|_t_r||-|48|-|ns| |Turn-off delaytime|_t_d(off)||-|388|-|ns| |Fall time|_t_f||-|66|-|ns| |Turn-on energy|_E_on||-|10.20|-|mJ| |Turn-off energy|_E_off||-|6.00|-|mJ| |Total switchingenergy|_E_ts||-|16.20|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=75.0A,<br>_di_F_/dt_=600A/µs|-|640|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|12.30|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|34.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-100|-|A/µs| V�2.2 2017-06-09 Datasheet 5 IKQ75N120CH3 **==> picture [474 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> PtCCLTETT 1000900 Pf of<br>100<br>L ETTE) 800 IN ff]<br>not for linear use<br>£ Foi e 700<br>6 eo iE \<br>eB PN<br>600<br>10<br>B T § IN<br>500<br>G: |PL TUTTI TTTTTT |g 400300 awPty TN<br>SE 1 I IIE * .<br>200<br>a 100<br>a<br>0.1 a 0 P| | |tN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>( T vj ≤ 175°C)<br>160 300<br>VGE=20V<br>17V<br>140<br>TTT] 250 P&S 15V Gee<br>120 K EE 13V an<br>_ \ ; y/o<br>11V<br>200<br>Pt UATE ERR<br>100 9V<br>7V<br>80 150<br>Ne NG 5V<br>PLC EE PAYA<br>60<br>100<br>: ra | INK AT<br>ee<br>40<br>50<br>Po} ASE<br>20<br>1. -AX<br>0 ee e 0 eAe<br>25 50 75 100 125 150 175 0 1 2 3 4 5 6<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br> 6 Datasheet 2017-06-09 IKQ75N120CH3 **==> picture [474 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>VGE=20V Tvj = 25°C<br>Ae LY Tvj = 175°C<br>17V<br>250 15V NN 250 e | |e |__!<br>_— ee e<br>13V<br>_ KNW ZA F e<br>11V<br>200 200<br>WW: 9V ROLL eeWW<br>a)NN 7V ae a) ee ee<br>150 150<br>e) 5V 4 e)<br>: ENN 2a Sf<br>: ENG CAs SE tt ep<br>100 100<br>: ) NWa ff ttat<br>| Am<br>50 50<br>ae Pt | |<br>a Zc OG ee ee eee<br> ZN Ge ee ee<br>[S] [s]<br>0 | A [As] g | | OK 0 , eee<br>0 1 2 3 4 5 6 2 4 6 8 10 12 14 16 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>4.0 1000<br>IC = 38A<br>IC = 75A a . poeag ee<br>_ ee IC = 150A ae p ———— e<br>3.5<br>& je pee td(off) s RO<br>tf<br>td(on)<br>3.0 tr<br>P, “7 o 100 E e<br>Ooo 2.5 Ww r reeee<br>tut = a ee ee ee<br>E 7. a Sea -] QoF poeeS ce eemnee<br>2.0<br>i en = ee<br>10<br>ee eee<br>= 1.5 rr<br>Q a eeee<br>° a ee<br>1.0 re a ee ee ee<br>0.5 1<br>25 50 75 100 125 150 175 0 30 60 90 120 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V) Figure 8. _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G=6 Ω Figure E) Datasheet 7 2017-06-09 IKQ75N120CH3 **==> picture [230 x 329] intentionally omitted <==** **----- Start of picture text -----**<br> td(off)<br>tf<br>1000 td(on)<br>| tr ee es ee ee ee<br>1 a ee<br>po eree<br>aa a a ee ee ee<br>a ee<br>ow ~~ leas | | | |<br>Boe |7 [||)] | |<br>= ee<br>oO<br>Zz<br>100<br>5 ee ed eee ese ae<br>E a a a ha<br>= a ee eae ae<br>a a ee ee ed<br>~ a ee ee ee ee<br>a a eee<br>10<br>0 5 10 15 20 25 30 35 40<br>R G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of<br>resistor<br>(inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, I C =75A, Dynamic test circuit in<br>Figure E)<br>t<br>**----- End of picture text -----**<br> **==> picture [233 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> td(off)<br>tf<br>1000 td(on)<br>| tr a ee ee ee<br>1 a a a<br>a<br>e eee ee<br>e e<br>2. - [|=]]<br>& pepo} |<br>=<br>oO<br>Zz<br>100<br>5 a es<br>a<br>= a ee<br>po]Pe<br>- a eee eee i<br>a [pana] [ec]<br>10<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br> Figure 10. **==> picture [154 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, V CE =600V, V GE=0/15V,<br>I C =75A, R G=6 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br> **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 8 60<br>typ. Eoff<br>min. Eon<br>max. Ets<br>7<br>uw 50 /<br>x4 - = /<br>O 6 —<br>q 40<br>ro) ~~ ~ “PS ae e)7) / /<br>=<br>nO 5 ~ a a )/<br>Lu — = = ~ ~~ SA O> // /<br>= ~ . Lu 30<br>i. _|- Nl O&a ‘ Jf \/<br>4<br>=i <P Zzo / //<br>20<br>uw)WI 3 ™ OE “<br>< o= AZY 7<br>- “<br>10 | [a] | —<br>2<br>1 0<br>25 50 75 100 125 150 175 0 30 60 90 120 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Figure 12. **==> picture [10 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( I C<br>**----- End of picture text -----**<br> (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G=6 Ω , Dynamic test Figure E) 8 Datasheet 2017-06-09 IKQ75N120CH3 **==> picture [474 x 341] intentionally omitted <==** **----- Start of picture text -----**<br> 30 18<br>Eoff Eoff<br>Eon “ Eon 2<br>Ets 16 Ets<br>= / Ee . |<br>25 Z pea<br>5 “ z am<br>14<br>Lu :7 Lu Pea<br>2 20 12<br>:<br>a- a“PTs 10 Lor<br>2 |<br>15<br>“ aZz 8<br>Za i; 7 oy =_— 7 =<br>=a<br>=<br>10 4 5 6<br>eee =<br>4<br>5<br>2<br>0 0<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =75A, Dynamic test circuit in I C =75A, R G=6 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [250 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>Eoff<br>Eon<br>Ets<br>25 vy<br>a a<br>D uw<br>20 7 a Q<br>& 7 kK<x<br>—! “oO a 5<br>% - “| 3<br>iad a a o<br>uu 15 > =<br>Zz I“ Z E<br>uw Les =<br>9 oO a im<br>Zz 7 ul<br>10<br>fs) < &<br>E<br>=— -<br>ee ee ee<br>5<br>0<br>400 450 500 550 600 650 700 750 800<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> **==> picture [214 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 16 P|<br>V CC<br>— == 240V / yo<br>14 _-- a V CC = 960V /<br>/ WA<br>12<br>V<br>/<br>10 v4<br>8<br>6<br>°<br>4<br>2<br>0<br>0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC]<br>**----- End of picture text -----**<br> Figure 15. Figure 16. Typical ( _I_ C=75A) _T_ vj =175°C, _V_ GE=0/15V, _I_ C =75A, _R_ G=6 Figure E) 9 Datasheet 2017-06-09 IKQ75N120CH3 **==> picture [471 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>Cies<br>Coes<br>1E+4 Cr Cres<br>E S 500 A<br>aa ee Prwv /<br>Se ee<br>400<br>ro a ee ee J<br>Te ee FE 7<br>Z \\ a<br>EF \ e) 300 4<br>O 1 O<br><x 1000 VON = J<br>oO pA NT =<br>=< a a<br>- a<br>aSeee ee 200 r<br>ee ee ee tz<br>100<br>ee a ee<br>100 0<br>0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>C<br>I C(SC)<br>**----- End of picture text -----**<br> Figure 17. **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V GE<br>**----- End of picture text -----**<br> Figure 18. **==> picture [91 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V CE 600V, T vj 175°C)<br>**----- End of picture text -----**<br> **==> picture [469 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>D = 0.5<br>| 0.1 0.2 Su mitt | bezel<br>40 > SCOTSa<br>0.1<br>_ Ss NSECee<br>= Q 0.05<br>35<br>0.02<br>Ww Ww : NHN Let TP<br>= 9 0.01 ea<br>a < IN HME TNE TTL TT<br>30<br>2 7) single pulse INEST<br>0.01<br>< | | 2 Fw ZUM<br>7p) Lu NIN LL ll y |<br>Ir 25 \ a PA et<br>-= _IxS P TCIN CNTIRNUNN NCATTT2) enTTei|<br>= Y MD 2921<br>E 20 | Wi or AM TAT<br>:S ENGR F ELAMUTE ETA ELM Tl<br>15<br>De | ees 0.001 0 AA<br>S N 7 e e eee |<br>Tr Z a an<br>wn 10 PD, a si YT| TT Ti —— Tilil<br>- | - YN Cah IR, Co=te/Ro _||lI<br>aS PTA TT TT oo<br>5 — Al ec<br>i: 1 2 3 4 5<br>ri[K/W]: 0.02275 0.047736 0.08788 2.0E-3 2.7E-4<br>τ i[s]: 3.8E-4 2.7E-3 0.019881 0.505051 12.95671<br>0 PEEL EEE ET 1E-4 A| |<br>10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>t SC c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 19. Figure 20. IGBT ( _D_ = _t_ p/T) **==> picture [121 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V CE 600V, start at T vj ≤ 175°C)<br>**----- End of picture text -----**<br> 10 Datasheet 2017-06-09 IKQ75N120CH3 **==> picture [233 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 +<br>Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A<br>900<br>800<br>=2<br>W 700 ~<br>=>> N .<br>LuO55O5 600 ~“ ~<br>— ~ ~<br>aT 500 ™<br>—<br>_<br>a<br>wy 400 oN<br>—<br>™<br>300 =<br>Ol<br>200<br>300 350 400 450 500 550 600 650 700<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br> **==> picture [256 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> D = 0.5<br>0.2<br>0.1<br>z i: OUI<br>0.1<br>0.05<br>2 0.02 ah 2<br>0.01<br>tS Fy ists CET Lea =2<br>single pulse<br>Di Lo TTT W<br>WwWa2 0.01 CAARRIUSL OY I =>><br>ES mn 000/70<br>rd Ee)CENT ereeee LuO55O5<br>WwE Dace NA<br>b PTeerSVT aT<br>f TI TIM TT<br>m) A<br>Zz 0.001 / a<br>ee ee Ri Re i wy<br>F | 1 iM<br>- AI TI Seis CoPte/Re ll<br>pA ey IE ET<br>i: 1 2 3 4 5<br>ri[K/W]: 0.01104 0.10889 0.1573 2.8E-3 3.0E-4<br>τ i[s]: 3.6E-4 2.7E-3 0.01681 0.44863 12.11241<br>riA |ee |<br>1E-4<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>Figure 21. Diode transient thermal impedance as a<br>function of pulse width<br>( D = t p/T)<br>16<br>Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A<br>14 rf<br>2 <x<br>12<br>< ia<br>10<br>Oo =)OoOo<br>Ww<br>> WW<br>8<br>e)O 35<br>ia¥<br>! 6<br>=] ¥<br>4<br>a re<br>2 Bae<br>0<br>300 350 400 450 500 550 600 650 700<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>c)th(j-<br>Z<br>Q rr I rr<br>**----- End of picture text -----**<br> Figure 22. Typical of diode ( _V_ R=600V) **==> picture [233 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A<br>50 | [ff]<br><x<br>40<br>ia<br>=)OoOo = a<br>—_<br>WW =<br>30<br>35 = |<br>ia¥ 20 ce TT<br>10<br>0<br>300 350 400 450 500 550 600 650 700<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>**----- End of picture text -----**<br> Figure 23. Figure 24. ( _V_ R=600V) ( _V_ R=600V) 11 Datasheet 2017-06-09 IKQ75N120CH3 **==> picture [473 x 290] intentionally omitted <==** **----- Start of picture text -----**<br> 0 300<br>Tvj = 25°C, IF = 75A Tvj = 25°C<br>Tvj = 175°C, IF = 75A Tvj = 175°C<br>-50 Tle —_ SS Se 7] BLO<br>EO) 250 ES if<br>— ~N it ty<br>S n P T TT<br>-100<br>SPPg | DWN . P pAy<br>6 kK 200<br>oa PN\ TNsZ EEE/<br>-150<br>: fp<br>£ oO<br>-200 150<br>3:2 \ 3Qaee| | | | | A |<br>38 -250 \ SO<br>: \P > 100 EE A<br>-300<br>50<br>-350<br>Pig)| | |<br>EPA<br>-400 0<br>300 350 400 450 500 550 600 650 700 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 25. Figure 26. ( _V_ R=600V) **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>IF = 38A<br>IF = 75A<br>IF = 150A<br>3.0<br>S Ww 2.5 f<br>ef<br>ke<br>I<br>><br>Sf<br>Q 2.0<br>aa<br>J<br>Ss<br>x<br>BS 1.5 fp<br>a<br>1.0<br>0.5<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 27. 12 Datasheet 2017-06-09 IKQ75N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Package Drawing PG-TO247-3-46** **==> picture [174 x 343] intentionally omitted <==** **==> picture [52 x 258] intentionally omitted <==** **==> picture [357 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663<br>EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br> 13 V�2.2 2017-06-09 Datasheet IKQ75N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.2 2017-06-09 Datasheet IKQ75N120CH3 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�third�generation�IGBT ## **Revision�History** IKQ75N120CH3 ## **Revision:�2017-06-09,�Rev.�2.2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2017-04-26|Final data sheet| |2.2|2017-06-09|Update Figure 6| 15 V�2.2 2017-06-09 Datasheet ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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