Image not available
Illustrative purposes only
IKQ40N120CH3XKSA1
IGBT, 80 A, 2 V, 500 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3P
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 500W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2V
| Delivery and price | |
|---|---|
| Units per pack | 240 |
| Price | 3.08 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IKQ40N120CH3
**==> picture [469 x 153] intentionally omitted <==**
**----- Start of picture text -----**<br>
Features: C<br>High speed H3 technology offers:<br>* High efficiency in hard switching and resonant topologies<br>¢ 10usec short circuit withstand time at T vj=175°C<br>¢ Easy paralleling capability due to positive temperature<br>G<br>coefficient in V CEsat E<br>« Low EMI<br>* Low Gate Charge Q G<br>¢ Very soft, fast recovery full current anti-parallel diode<br>¢ Maximum junction temperature T vjmax=175°C<br>¢ Pb-free lead plating; ROHS compliant @,,<br>*« Complete product spectrum and PSpice Models: 222, Cap<br>http://www.infineon.com/igbt/<br>**----- End of picture text -----**<br>
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKQ40N120CH3|1200V|40A|2V|175°C|K40MCH3|PG-TO247-3-46|
Datasheet www.infineon.com
2017-06-09
IKQ40N120CH3
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�third�generation�IGBT
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
2
V�2.2 2017-06-09
Datasheet
IKQ40N120CH3
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�third�generation�IGBT
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=134°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turn off safe operating area<br>_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=134°C|_P_tot||500.0<br>136.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.30|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.50|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
3
V�2.2 2017-06-09
Datasheet
IKQ40N120CH3
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�third�generation�IGBT
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.50|2.35<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.85|2.30<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.00mA,_V_CE=_V_GE|5.1|5.8|6.5|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>3000|250<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|14.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2385|-|pF|
|Output capacitance|_C_oes||-|235|-||
|Reverse transfer capacitance|_C_res||-|132|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=40.0A,<br>_V_GE=15V|-|190.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|46|-|ns|
|Turn-off delaytime|_t_d(off)||-|300|-|ns|
|Fall time|_t_f||-|31|-|ns|
|Turn-on energy|_E_on||-|3.30|-|mJ|
|Turn-off energy|_E_off||-|1.30|-|mJ|
|Total switchingenergy|_E_ts||-|4.60|-|mJ|
V�2.2 2017-06-09
Datasheet
4
IKQ40N120CH3
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�third�generation�IGBT
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=600A/µs|-|340|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|3.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|19.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-134|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|46|-|ns|
|Turn-off delaytime|_t_d(off)||-|375|-|ns|
|Fall time|_t_f||-|69|-|ns|
|Turn-on energy|_E_on||-|4.50|-|mJ|
|Turn-off energy|_E_off||-|2.50|-|mJ|
|Total switchingenergy|_E_ts||-|7.00|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=600A/µs|-|500|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|7.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|27.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-97|-|A/µs|
V�2.2 2017-06-09
Datasheet
5
IKQ40N120CH3
**==> picture [474 x 313] intentionally omitted <==**
**----- Start of picture text -----**<br>
550<br>100 emit 500<br>en)<br>450<br>a P|ee AYP not for linear use 400 PN\ | fo of |<br>£ {VU Tm Ei tt)<br>350<br>im OQ XI<br>10<br>5 ALIMENT} @ TA; | ft<br>a3 AEa Ee] 300 Poof KF\ ft]<br>or =)<br>O ee 250 Nee<br>BF PT TTT TET EET o<br>200<br>2 EE 1 yg Pf} | (KE<br>150<br>ee<br>PT TTT TET PE 10050 rf | foof K |<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>I C P tot<br>**----- End of picture text -----**<br>
> Figure 2. Power **temperature** ( _T_ vj ≤ 175°C)
**==> picture [469 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
80 160<br>VGE=20V<br>17V<br>70 Se 140 eee<br>15V<br>_ 60 PEN\ |Le 120 13V NN<br><x _ A WA<br>11V<br>ee NN<x<br>50 100 9V<br>7V<br>ee eeee<br>40 80<br>Yeee Y NY, 5V \ We ee<br>i 30 60 Ga<br>PPE LN<br>20 40<br>pA AR<br>10 20<br>0 \ 0 Jo \<br>25 50 75 100 125 150 175 0 1 2 3 4 5 6<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>
6
Datasheet
2017-06-09
IKQ40N120CH3
**==> picture [228 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
160<br>VGE=20V<br>17V<br>140<br>15V<br>120 13V<br>< SKULL<br>11V<br>: QWswy,<br>100 9V<br>7V<br>O 80 OeNAN XK<br>5V N\ A“, |<br>60<br>Ef ONKM<br>40<br>20<br>Z N<br>0<br>0 1 2 3 4 5 6<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=175°C)
**==> picture [230 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
160 LY<br>Tvj = 25°C<br>Tvj = 175°C<br>140<br>120<br>LEE V/A<br>< Ee/<br>100<br>|O 80<br>/<br>60<br>SE pF<br>40<br>20<br>TA<br>0<br>2 4 6 8 10 12 14 16 18<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>
Figure 6. Typical ( _V_ CE=20V)
**==> picture [471 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
5.0 1000<br>IC = 20A ss<br>4.5 IC = 40A poeSPTa es<br>IC = 80A<br>_ = a a a i ee ee ee<br>= a [7 td(off) |<br>4.0 tf<br>< 3.5 _-T” ttd(on)r<br>PCO: feeT).a EY IAn<br>100<br>= Loo — a ers<br>s ve ip) po ee<br>3.0<br>o uw a a ee Da a<br>= a ee ee ee ee<br>2.5<br>E —=-—-=| 9g a eee<br>2.0<br>pf oleeepey s fee<br>wWSn 1.5 |—— eeeree E- 10 EOee<br>= a a<br>eB SS=====<br>. 1.0 a Deee<br>0.5<br>ee ee<br>0.0 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
_V_ GE =0/15V, _R_ G=12 Ω Figure E)
Datasheet
7
2017-06-09
IKQ40N120CH3
**==> picture [474 x 333] intentionally omitted <==**
**----- Start of picture text -----**<br>
td(off) td(off)<br>1000 tf 1000 tf<br>1 a— || ttd(on)r eeee————=ee ee eee eee t| —— ttd(on)r aa ee—_—eeee<br>SS ee<br>a SS ae a<br>a ee ee ee ee a ee ee<br>a ee eee a e ee<br>my my<br>5 5<br>Wwre 100 aeeSS eeuw 100 eeea es<br>== eeel er i ee ee eeen e v e r csee A= [_—a esee<br>5 a a a Pe ian ee a a ee<br>> a a Se ee a RE ee<br>= a<br>[abet<br>GO a el ee<br>2 | | | | | &@ ~E | fT ft ff |<br>nn<br>10 10<br>aaaa<br>po poa a<br>a a ee ee ee eese<br>a a a ee ee<br>1 1<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, R G=12 , Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
**==> picture [471 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
8 20.0<br>typ. Eoff /<br>min. Eon<br>_ max. 17.5 | Ets ) /<br>7<br>Ww<br>2 =) f<br>15.0<br>Sa 6 ~e A ia // /<br>a ~ ~~ a / /<br>O ~~ oo N O 12.5 f 4<br>Lu5 5 — = ~ = ~~ RYys yAL aa>O /// //<br>£ ~ ~ ms i 10.0 : /<br>Luw 4 | “N tiLu /i/<br>fF SY — (o)Zz 7.5 /7<br>My 3 O anv7<br><x: ™ Ee) 5.0 / 4<br>. 7<br>2<br>2.5<br>ea<br>1 0.0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. of ( _I_ C=1mA)
Figure 12.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G=12 Ω , Dynamic test Figure E)
8
Datasheet
2017-06-09
IKQ40N120CH3
**==> picture [474 x 341] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 8<br>Eoff Eoff<br>9 Eon Eon<br>Ets 7 Ets<br>8<br>. e e . 6 Sf |) | Lem<br>7<br>5<br>6<br>>gc | - 2 So> - _<br>ow 2 ow Jeo<br>2 5 2 4 ==<br>oO 4 a oO _<br>Zz Zz 3<br>r “ r<br>3<br>ee: 2 sf | f | ope<br>2<br>1<br>1<br>0 0<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, R G=12 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
**==> picture [474 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 16<br>Eoff V CC<br>E Eon y Wa _- V Lt CC = 960V<br>9<br>Ets 14 ae | J |<br>Z LP) fae yy<br>8 > /<br>a Ee<br>12<br>7<br>op) Y 7 Za ~¢<br>10<br>6 L Z e)<br>) Pa Za iw<br>or2 5 |p imE 8<br>oO 4 uw<br>6<br>pfO irZz - <x<br>3<br>4<br>® _a<br>2<br>a 2 Py PPT Py<br>1<br>0 0<br>400 450 500 550 600 650 700 750 800 0 30 60 90 120 150 180 210<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=40A)
**==> picture [91 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
T vj =175°C, V GE=0/15V,<br>**----- End of picture text -----**<br>
_I_ C =40A, _R_ G=12 Figure E)
9
Datasheet
2017-06-09
IKQ40N120CH3
**==> picture [471 x 679] intentionally omitted <==**
**----- Start of picture text -----**<br>
1E+4 300<br>H Cies e e ee ee<br>I Coes a ee ee ee = 270<br>Cres<br>I aeo /<br>a 240 /<br>t op 210 CE<br>L 1000 eee:a w<br>WwFE SSSSSSsa a 180 i lll Yi4<br>oO7. PRON————— Oo eee<br>150<br>e Ww ee eee 9 J<br>PSS bry<br>120<br>100<br>a ee eee V4<br>po ke 90<br>a ee se O<br>ee eee ee<br>a a 60 L<br>Seee fs 30<br>10 0<br>0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 600V, T vj 175°C)<br>45<br>D = 0.5<br>0.2<br>40 |Py EE. EE LLY ROTC wer a<br>0.1 . A<br>s SSC \ Mera THTI<br>Z = 0.1 LCA 0.05<br>35<br>0.02<br>S= 9 CNNTTer a<br>ke <t 0.01 NUTINI<br>fal 30 CAAT TTT TT<br>single pulse<br>Z o Pa NAT<br>2 25 PRT TTT Ey fy | a PNM HSAT TIT TMT<br>=r | \ aoie 0.01 anVN 0000<br>< CONNIE I A<br>5 20 \ I NFa ||<br>O<: 15 N F22 0.001 PETPETIT WATT TIETTT M LTTETT ETTTETTT<br>(7p) 10 a i a Lt<br>2; NN <- eTSeea G Hat }<br>5 a — PATTIE TICooroTIE ETT TE<br>i: 1 2 3 4 5<br>ri[K/W]: 0.016055 0.117494 0.15756 3.3E-3 3.4E-4<br>τ i[s]: 4.1E-4 2.8E-3 0.018313 0.491884 12.38553<br>OT fd Al |<br>0 1E-4<br>10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal resistance<br>gate-emitter voltage ( D = t p/T)<br>( V CE 600V, start at T vj ≤ 175°C)<br>C<br>I C(SC)<br>t SC c)th(j-<br>Z<br>**----- End of picture text -----**<br>
10
Datasheet
2017-06-09
IKQ40N120CH3
**==> picture [233 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 |<br>Tvj = 25°C, IF = 40Avj = 25°C, IF = 40A = 25°C, IF = 40AF = 40A = 40A<br>Tvj = 175°C, IF = 40Avj = 175°C, IF = 40A = 175°C, IF = 40AF = 40A = 40A<br>900<br>—_——.<br>— 800 \<br>= \<br>700<br>=> \<br>><br>= ‘ \<br>O 600<br>LU=O=O<br>ar \<br>WwW \<br>TTT ~<br>500 NI a<br>e<br>w 400 NN<br>300<br>—<br>200<br>200 300 400 500 600 700 800<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
**==> picture [480 x 640] intentionally omitted <==**
**----- Start of picture text -----**<br>
| D = 0.5 a Tvj = 25°C, IF = 40Avj = 25°C, IF = 40A = 25°C, IF = 40AF = 40A = 40A |<br>Pe CCCEMI CTE ee<br>0.2 Tvj = 175°C, IF = 40Avj = 175°C, IF = 40A = 175°C, IF = 40AF = 40A = 40A<br>aga<br>900<br>= 0.1 eM<br>0.05<br>7 0.1 Bai SiaLALSANT —_——.<br>0.02 800<br>S PE 2<br>2 NUTEN TL TAA — \<br>5 Fa 0.01 NIROEASF E M 7ACENCEiCTCL = \<br>single pulse<br>700<br>aW2 eear MMIIi ALMTMT TEEIT TTT => \<br>< 0.01 LINAS)hs NS? WA = ‘ \<br>z NNO oe ee oo O 600<br>Ww |ENS eA Ee| | et th LU=O=O<br>= er NOT I i i ar \<br>- PTT YET TTT WwW \<br>E PT ATT TT TT TT TTT ~<br>2 A 500 NI a<br>2 e ee e<br>Zz 0.001 J Ri Re w 400 NN<br>a AICI} 4ie, contest<br>A<br>300<br>(At i: 1 ks 2 3 ee bt 4 eel 5 —<br>ri[K/W]: 0.02668 0.22581 0.24167 5.3E-3 3.9E-4<br>τ i[s]: 3.3E-4 2.7E-3 0.01549 0.40258 11.77304<br>1E-4 200<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 200 300 400 500 600 700 800<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Diode transient thermal impedance as a Figure 22. Typical reverse recovery time as a function<br>function of pulse width of diode current slope<br>( D = t p/T) ( V R=600V)<br>8 35<br>Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A<br>7<br>30<br>Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A<br>=Ww 6 kK<br>: = 25 || tle<br>aO 5 6)=) 4 7<br>: : 20 || pp ib<br>uw Ww 7<br>Ooa 4 i Zz y wa<br>pf | | - °<br>: Ww 15<br>ff) oe Eaeane<br>3 ee eee wa<br>or or<br>uu nm 10<br>2<br>5<br>1 P| | tt EER<br>0 0<br>200 300 400 500 600 700 800 200 300 400 500 600 700 800<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>c)th(j-<br>Z<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=600V)
( _V_ R=600V)
11
Datasheet
2017-06-09
IKQ40N120CH3
**==> picture [491 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
0 ee | 160 es /<br>Tvj = 25°C, IF = 40A Tvj = 25°C / }<br>Tvj = 175°C, IF = 40A Tvj = 175°C<br>-25 TS | 140 es / /<br>/<br>mya -50 ~ ~~ 120<br>\ <x<br>z ~_ Z l)<br>6 -75 \ - 100 /<br>ic = Z / /<br>(o} NC @<br>><br>23<br>© -100 80<br>4<br>2 \ _~ & /<br>o -125 \ > a= 60<br>ne} .<br>-150 40<br>-175 20<br>-200 0 =_<br>200 300 400 500 600 700 800 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
( _V_ R=600V)
**==> picture [233 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
3.00<br>IF = 20A<br>IF = 40A<br>2.75 IF = 80A<br>2.50<br>Ww 2.25<br>ke<br>I<br>O 2.00<br>><br>aa<br><x 1.75<br>x<br>O<br>Sa 1.50<br>1.25<br>1.00<br>0.75<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
12
Datasheet
2017-06-09
IKQ40N120CH3
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�third�generation�IGBT
## **Package Drawing PG-TO247-3-46**
**==> picture [174 x 343] intentionally omitted <==**
**==> picture [52 x 258] intentionally omitted <==**
**==> picture [357 x 197] intentionally omitted <==**
**----- Start of picture text -----**<br>
MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663<br>EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br>
13
V�2.2 2017-06-09
Datasheet
IKQ40N120CH3
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�third�generation�IGBT
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
V�2.2 2017-06-09
Datasheet
IKQ40N120CH3
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�third�generation�IGBT
## **Revision�History**
IKQ40N120CH3
## **Revision:�2017-06-09,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-04-26|Final data sheet|
|2.2|2017-06-09|Update Figure 26|
15
V�2.2 2017-06-09
Datasheet
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →