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IKQ120N60TXKSA1
IGBT, 160 A, 1.5 V, 833 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:833W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP™
- Power Dissipation: 833W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 160A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.95 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IKQ120N60T
## TRENCHSTOP[TM]
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Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology<br>with soft, fast recovery anti-parallel Emitter Controlled diode<br>Features: C<br>* Very low V CE(sat) 1.5V (typ.)<br>* Maximum junction temperature 175°C<br>¢ Short circuit withstand time 5us<br>G<br>* TRENCHSTOP and Fieldstop technology for 600V<br>E<br>applications offers:<br>- very tight parameter distribution<br>- high ruggedness, temperature stable behavior<br>- high switching speed<br>CE(sat)<br>¢ Positive temperature coefficient in V @) lof,<br>** LowLow gateEMI charge Q G 222,Cap<br>* Increased current capability P<br>¢ Green package ni<br>* Very soft, fast recovery anti-parallel Emitter Controlled HE :<br>diode<br>G [.]<br>d<br>C<br>Applications: E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKQ120N60T|600V|120A|1.5V|175°C|K120T60|PG-TO247-3-46|
Datasheet www.infineon.com
2017-11-13
IKQ120N60T
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## TRENCHSTOP[TM] �series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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IKQ120N60T
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## TRENCHSTOP[TM] �series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=135°C|_I_C||160.0<br>120.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||480.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||480.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=124°C|_I_F||160.0<br>120.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||480.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||833.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,1)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.18|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.30|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Package not recommended for surface mount application
2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
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IKQ120N60T
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## TRENCHSTOP[TM] �series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=120.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.90|2.00<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=120.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.60|2.05<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.92mA,_V_CE=_V_GE|4.1|4.9|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>3000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=120.0A|-|75.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|7530|-|pF|
|Output capacitance|_C_oes||-|446|-||
|Reverse transfer capacitance|_C_res||-|206|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=120.0A,<br>_V_GE=15V|-|703.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=175°C|-|846|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=120.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=3.0Ω,_R_G(off)=3.0Ω,<br>_L_σ=63nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns|
|Rise time|_t_r||-|43|-|ns|
|Turn-off delaytime|_t_d(off)||-|310|-|ns|
|Fall time|_t_f||-|33|-|ns|
|Turn-on energy|_E_on||-|4.10|-|mJ|
|Turn-off energy|_E_off||-|2.80|-|mJ|
|Total switchingenergy|_E_ts||-|6.90|-|mJ|
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## TRENCHSTOP[TM] �series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=120.0A,<br>_di_F_/dt_=1100A/µs|-|280|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|3.50|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|25.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-500|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=120.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=3.0Ω,_R_G(off)=3.0Ω,<br>_L_σ=63nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns|
|Rise time|_t_r||-|51|-|ns|
|Turn-off delaytime|_t_d(off)||-|355|-|ns|
|Fall time|_t_f||-|43|-|ns|
|Turn-on energy|_E_on||-|6.70|-|mJ|
|Turn-off energy|_E_off||-|4.10|-|mJ|
|Total switchingenergy|_E_ts||-|10.80|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=120.0A,<br>_di_F_/dt_=1000A/µs|-|410|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|10.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|45.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-520|-|A/µs|
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IKQ120N60T
## TRENCHSTOP[TM]
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poSf EE 900800 Pt fff |<br>2A \<br>100<br>024) 700<br>5 (7/7 | TtETT 600<br>S 7 CA CO Tn) 2 PP ff |<br>500<br>10<br>oc e not for linear use s Se a<br>S LU TIS<br>400<br>uw! en ee ee ee el S<br>ee 300 aN<br>1<br>LUI PIE UME KY<br>ee oi 200<br>SHH<br>100<br>PO ee ee ||| ||<br>iti TNX<br>0.1 oi i m «=k 0 | EE<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Figure 2.<br>( Safe D ae T C T area j oc V GE=0/15V, temperature Power dissipation as a function of case<br>t p=1µs) ( T j ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
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180 360<br>VGE=20V<br>160 320 15V<br>pt; SH<br>13V<br>140 et ttETNfT 280 wwH/oTae<br>11V<br>9V<br>ce 120 240 ={f} A<br>/ | | Al fe ERNS) 8V /2nn<br>100 200 7V<br>6V<br>eee:5 \ ts ENNULi AAMTee<br>80 160<br>eee Seeee<br>60 120<br>ee i OTT |<br>40 80<br>ee ae) (Seen<br>20 40<br>Pi tt tt YY<br>ee e e<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T j=25°C)<br>( V GE ≥ 15V, T j ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>
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IKQ120N60T
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
360 360<br>VGE=20V Tj=25°C<br>Tj=175°C<br>320 15V Sf 320 |<br>ee ee eee<br>13V<br>280 280<br>feSenes 11V pi<br>en re<br>9V<br>b 240 IN STS VA E 240 !<br>8V<br>BERNGLU 22 eee<br>t 200 7V WN ST) Z| & 200<br>6V<br>BP ROW de Ld<br>© 160 INN a 8 160<br>NN Ae ee<br>: 120 WWE] = 120<br>~ TSN Pp<br>80 yan ee ee 80 f<br>(BN<br>40 40<br>Ui“ I Lg<br>A<br>0 0<br>ARIN |<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T j=175°C) ( V CE=20V)<br>3.0 CJ 1000 a<br>IICC=38A=75A po a ee ee es<br>_ IC=120A<br><xZ 2.5 IC=150A Pa p eee e e eeSeeee ee ee ee<br>td(off)<br>: ; n e<br>tf<br>2.0 td(on)<br>tr<br>: “Te |e fo<br>oben os (op)<br>Ww _ =<br>E Lee -7 -<br>(J) 2 :<br>1.5 100<br>= — _ eo — g a a Pa<br>uwow _-— r= a eeee<br>oOpee O Beeaeae<br>z 1.0 ff TT SO= | |eb--aye-]—-P= =+7<br>0.5 oREE dd<br>0.0 10<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>I C I C<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
inductive load, _T_ j =175°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=3 Ω ,Dynamic test circuit Figure E)
Datasheet
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IKQ120N60T
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1E+4 1000<br>11 td(off) aa a I| td(off) aa ee es ee<br>tf tf<br>J td(on) ef td(on) ee ee<br>tr tr<br>ee aee ee ee >}ee<br>z _—. P| || ____—_§—<br>1000 a a cc<br>= aa fz |<br>ip) as ee ee<br>WwW poa a CO ip)|<br>= a a ee ee ee =<br>a<br>O 100<br>5 5 a ee ee ee<br>i i a<br>ee 100 8 Lael [peep]<br>a ee ee ee ee SSeE po coe Taos<br>a ee ee ee<br>es<br>10 10<br>0 5 10 15 20 25 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 9. Typical switching times as a<br>resistor<br>(inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, I C =120A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 10.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =120A, _r_ G=3 ,Dynamic test circuit in Figure E)
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**----- Start of picture text -----**<br>
8 30<br>typ. Eoff<br>min. Eon<br>7 max. Ets<br>lu 25 /<br>EFaO 6 — -_aE ‘//<br>> ee ww<br>{a} TPs io) 20 7<br>o 5 Ppt & /<br>yf ~~ 7<br>><br>we 4 ~ — “sl 2 15 ‘|Z<br>Ee — ~~ _———~ | + Zz& 7 Z<br>E 3 Zz Va Yo<br>e ~~ ~ x= : Va<br>10<br>HWWi 2 =E ““ y,7 4<br>Ee o Land<br>“- 5 7ana —||<br>1<br>0 0<br>0 25 50 75 100 125 150 0 40 80 120 160 200 240<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=1,92mA)
Figure 12.
(inductive load, _T_ j =175°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=3 Ω ,Dynamic test Figure E)
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Datasheet
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IKQ120N60T
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
40 16<br>Eoff Eoff<br>Eon Eon<br>35 Ets 14 Ets<br>£& 30 £& 12<br>Lu a Lu<br>n Ye Y -<br>ie) “ 2) veo<br>e)a 25 L > e)a 10 Ue-oe<br>na a na ae<br>WwW 20 WwW 8 cert<br>Zz oe Zz -q7<br>15 6<br>5 a _ — 5 _— ~<br>Ee “7 “ —_ ~ E a“<br>10 4<br>= ae — | = a ————_ —<br>5 2<br>i ee [er]<br>0 0<br>0 5 10 15 20 25 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T j =175°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =120A,Dynamic test circuit in I C =120A, r G=3 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
16 16<br>Eoff 120V /<br>Eon 480V /<br>14 Ets 14 / /|<br>a /<br>> “a /<br>£ 12 Z > 12<br>(op) “ aT /<br>ip) Yo Ee<br>O 10 a 10 7<br>a “ fe) /<br>>O YYy 7 Za aw> [ — J<br>Z 8 a 4 = 8<br>Lu Y Z S<br>oO vo uw<br>ZzI 6 “ 7 Za bur 6<br>-Skee== 42 “ 7“ 4 4 _||p 5° 42<br>0 0<br>200 300 400 500 0 100 200 300 400 500 600 700 800<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=120A)
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**----- Start of picture text -----**<br>
T j =175°C, V GE=15/0V,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I C =120A, R G=3<br>Figure E)<br>**----- End of picture text -----**<br>
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IKQ120N60T
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
Cies<br>Coes<br>Cres<br>== --—+—_+} +—<br>1E+4 a Is<br>(aa<br>a a ee<br>ss<br>a ee<br>1000<br>9 ee<br>< a es<br>i rs ee<br>5) a PS<br>x aS ea ee<br>a. iOe<br>a eeee<br>eee:<br>100<br>a LS ES<br>(_—— —————]<br>a a<br>a<br>ee ee ee ee ee ee<br>10<br>0 5 10 15 20 25 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>**----- End of picture text -----**<br>
Figure 17.
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1600<br>1400<br>EE<br>5<br>wv<br>1200<br>1000<br>WW<br>[|<br>(oe) 800<br>re<br>600<br>©<br>bY<br> O 400<br>5<br>_<br>200<br>0<br>12 14 16 18 20<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC)<br>**----- End of picture text -----**<br>
Figure 18.
( _V_ CE 400V, _T_ j 150°C)
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12 SSSEREEEEENO. SMe 7 aod<br>0.1<br>_O 10 POETNN : ls= Aee<o9ev||<br>Ww= NwNN Wwx API||TINeA<br>= NSX O EZ<br>Fey 8 dd) dT KL LL 2 Ee NT<br>D=0.5<br>25 ||]oT) N~ UT] aSEAMCOIa eT 0.2<br>0.1<br>e Ti ull<br>0.05<br>: 6 TTT TTP PIN: PRI 0.02<br>Nae ya 0.01<br>OaONE:=) 4 Ft ff ff fd} yy | Frfi5x= 0.01 A2eter Jaeeere single pulse |LTTCon<br>K |<br>. BD PMA Ader | er TUITE ETE TT<br>Bf Z ae cath) Fe |||<br>- Cy=h,/R1 Co=fe/Ro<br>. 2 fpf | CT] |<br>L AL<br>i: 1 2 3 4<br>ri[K/W]: 0.02686799 0.0369369 0.1151423 3.0E-3<br>τ i[s]: 2.1E-4 1.6E-3 0.01573455 0.2126417<br>0 FP} tt tT | ety 0.001 t)I LT TrAI | i |ti TTT<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal impedance as a<br>gate-emitter voltage function of pulse width for different duty<br>( V CE =400V, startat T j =25°C, T jmax ≤ 150°C) cycles D<br>t SC thJC<br>Z<br>**----- End of picture text -----**<br>
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( D = t p/T)<br>**----- End of picture text -----**<br>
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IKQ120N60T
## TRENCHSTOP[TM]
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800<br>Tj=25°C, IF = 120A<br>Tj=175°C, IF = 120A<br>— ET eee 700 = ft<br>S CAME TINE Iern ds<br>= PETIT TTI LY<br>tu 0.1 CO<br>S TIN LIA, > 600 \<br>Zz< aEHH HHH Ie HEH EH aT2 \<br>a PT er YT SNSTTT TTTTTTTTT = \<br>D=0.5 500<br>a YPPETIT TTIAvi SUTEE 0.2 |TET = ~<br>0.1<br>0.05<br>= ne pl ML UTI & Naw<br>s Ce 0.02 CTT > 400 NS~<br>0.01<br>2 /}) ~<br>single pulse<br>0.01 ee eds 300 oN.|<br>Z Co eee eee en ||| O —<br>WwoO RrenerZe TT TCT TTT > |<br>Zz |) Re ||| wy ><br>s DA on || 200<br>Ee LA TMTIMITTTIM EI im CT Cit CTT 100 P ] fof]<br>i: 1 2 3 4<br>ri[K/W]: 0.05464681 0.08604638 0.1607048 4.1E-3<br>τ i[s]: 2.1E-4 2.6E-3 0.01504089 0.2133931<br>[ a ee a<br>0.001 0<br>eel «OL | |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 500 700 900 1100 1300 1500<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Diode transient thermal impedance as a Figure 22. Typical reverse recovery time as a function<br>function of pulse width for different duty of diode current slope<br>cycles D ( V R =400V,Dynamic test circuit in Figure E)<br>( D = t p/T)<br>12 70 LE<br>Tj=25°C, IF = 120A<br>Tj=175°C, IF = 120A<br>60<br>sy2 10 Tj=25°C, I TT F = 120A < 74 oo<br>Tj=175°C, IF = 120A<br>0) 4 50 Z<br>or<x 8 | | ora 7 7<br>L a) 2<br>40<br>g 6 > 2<br>2 > cana<br>uy 8 30 |<br>“): 4 WwW0)<br>PE im pe<br>ul i 20 —T<br>iw a SSS ee fi a<br>PeT mf lL<br>2<br>[Tye bee<br>10<br>0 0<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery charge as a Figure 24. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R =400V, Dynamic test circuit in Figure E) ( V R =400V, Dynamic test circuit in Figure E)<br>t rr<br>thJC<br>Z<br>Q rr I rr<br>**----- End of picture text -----**<br>
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IKQ120N60T
## TRENCHSTOP[TM]
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0 360<br>Tj=25°C, IF = 120A Tj=25°C<br>a Tj=175°C, IF = 120A Tj=175°C / /<br>/<br>-200 | 300 e e /<br>PX |<br>4 -400 240<br>ee ee Ne <x<br>i 7 kKZ //<br>(o}<br>ef | |NN<br>-600 180<br>© | 8 /<br>a<br>x8—\ N SN]Y2=<br>efo)<br>2 -800 | NT re: 120<br>/<br>-1000 60<br>po\ /<br>\<br>pS C<br>-1200 0<br>500 700 900 1100 1300 1500 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
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( V R<br>**----- End of picture text -----**<br>
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4.0<br>IF=38A<br>IF=75A<br>3.5 IF=120A<br>IF=150A<br>3.0<br>uw<br>4 2.5<br>ke<br>I<br>><br>a 2.0<br>aa<br><x<br>ow 1.5<br>LL<br>i a<br>1.0<br>0.5<br>0.0<br>0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
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## TRENCHSTOP[TM] �series
## **Package Drawing PG-TO247-3-46**
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MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663<br>EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �series
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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IKQ120N60T
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## TRENCHSTOP[TM] �series
## **Revision�History**
IKQ120N60T
## **Revision:�2017-11-13,�Rev.�2.3**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2014-11-18|Final data sheet|
|2.2|2014-11-18|Update of Transconductancegfs|
|2.3|2017-11-13|Minor change Fig. 20 and Fig. 21|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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