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IKQ100N60TXKSA1
IGBT, 160 A, 1.5 V, 714 W, 600 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:714W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pin
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOPT
- Power Dissipation: 714W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 160A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.17 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
## IKQ100N60T ## TRENCHSTOP[TM] **==> picture [469 x 272] intentionally omitted <==** **----- Start of picture text -----**<br> Low Loss DuoPack : IGBT in TRENCHSTOP TM and Fieldstop technology<br>with soft, fast recovery anti-parallel Emitter Controlled diode<br>Features: C<br>* Very low V CE(sat) 1.5V (typ.)<br>* Maximum junction temperature 175°C<br>¢ Short circuit withstand time 5us<br>G<br>* TRENCHSTOP and Fieldstop technology for 600V<br>E<br>applications offers:<br>- very tight parameter distribution<br>- high ruggedness, temperature stable behavior<br>- high switching speed<br>CE(sat)<br>¢ Positive temperature coefficient in V @) lof,<br>** LowLow gateEMI charge Q G 222,Cap<br>* Increased current capability P<br>¢ Green package ni<br>* Very soft, fast recovery anti-parallel Emitter Controlled HE :<br>diode<br>G [.]<br>d<br>C<br>Applications: E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKQ100N60T|600V|100A|1.5V|175°C|K100T60|PG-TO247-3-46| Datasheet www.infineon.com 2017-11-15 IKQ100N60T **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.3 2017-11-15 Datasheet IKQ100N60T **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �series ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=130°C|_I_C||160.0<br>100.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||400.0|A| |Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||400.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=117°C|_I_F||160.0<br>100.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||400.0|A| |Gate-emitter voltage|_V_GE||±20|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs| |Powerdissipation_T_c=25°C|_P_tot||714.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,1)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.21|K/W| |Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.35|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Package not recommended for surface mount application 2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. 3 V�2.3 2017-11-15 Datasheet IKQ100N60T **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=100.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.90|2.00<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=100.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.60|2.05<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.20mA,_V_CE=_V_GE|4.1|4.9|5.7|V| |Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2500|40<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=100.0A|-|63.0|-|S| |Integratedgate resistor|_r_G|||none||Ω| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|6230|-|pF| |Output capacitance|_C_oes||-|360|-|| |Reverse transfer capacitance|_C_res||-|175|-|| |Gate charge|_Q_G|_V_CC=480V,_I_C=100.0A,<br>_V_GE=15V|-|610.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|802|-|A| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=100.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=3.6Ω,_R_G(off)=3.6Ω,<br>_L_σ=63nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns| |Rise time|_t_r||-|38|-|ns| |Turn-off delaytime|_t_d(off)||-|290|-|ns| |Fall time|_t_f||-|31|-|ns| |Turn-on energy|_E_on||-|3.10|-|mJ| |Turn-off energy|_E_off||-|2.50|-|mJ| |Total switchingenergy|_E_ts||-|5.60|-|mJ| V�2.3 2017-11-15 Datasheet 4 IKQ100N60T **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �series **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=100.0A,<br>_di_F_/dt_=1000A/µs|-|230|-|ns| |Diode reverse recoverycharge|_Q_rr||-|2.80|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|23.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-450|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=100.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=3.6Ω,_R_G(off)=3.6Ω,<br>_L_σ=63nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|31|-|ns| |Rise time|_t_r||-|52|-|ns| |Turn-off delaytime|_t_d(off)||-|351|-|ns| |Fall time|_t_f||-|42|-|ns| |Turn-on energy|_E_on||-|6.00|-|mJ| |Turn-off energy|_E_off||-|3.70|-|mJ| |Total switchingenergy|_E_ts||-|9.70|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=100.0A,<br>_di_F_/dt_=1000A/µs|-|328|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|8.70|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|48.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-847|-|A/µs| V�2.3 2017-11-15 Datasheet 5 IKQ100N60T ## TRENCHSTOP[TM] **==> picture [233 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br>CU 700 dECd]CPt tf]<br>600 SJ<br>EN<br>500<br>3 J<br># TK<br>400<br>aaa<br>300<br>S \<br>200<br>fT NT<br>\<br>10000 P| ff fi<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br> **==> picture [472 x 630] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>600<br>b 7 | TeTP EN<br>500<br>G PLTTi 3 J<br>10<br>COE # TK<br>400<br>not for linear use<br>Se a aaa<br>300<br>eg ee | S \<br>1<br>= TMM 200<br>TM fT NT<br>Ll \<br>0.1 PELEen ell 10000 P| ff fi<br>EEE EE<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T j 175°C, V GE=0/15V, temperature<br>t p=1µs) ( T j ≤ 175°C)<br>180 300<br>VGE=20V<br>160 270 15V<br>pee TT SEP<br>13V<br>PPS 240 e/a<br>140<br>11V<br>210<br>ef OX 9V<br>120<br>Pp de 180 8V EW<br>x NEE AWA<br>100 7V<br>150<br>6V<br>PN ow NY/<br>80<br>120<br>Ae PAAR<br>60<br>90<br>EEE<br>POE PAIS<br>40<br>60<br>ee CRS<br>20 30<br>pop eCARe E )EE<br>0 0 ATT N T<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T j=25°C)<br>( V GE ≥ 15V, T j ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br> 6 Datasheet 2017-11-15 IKQ100N60T ## TRENCHSTOP[TM] **==> picture [471 x 313] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>VGE=20V Tj=25°C<br>270 15V Se 270 e Tj=175°C ee<br>13V<br>240 PQ, 240 PT| Tt |<br>NOS [AZ] | ye<br>11V<br>~~ / |<br>210 210<br>9V<br>Zz Zz |<br>5 8V NOY Je | |ye<br>180 180<br>a)PER 7V a) )<br>150 150<br>8 TINA] 6V se tL<br>F<br>F PRR ef LT<br>120 120<br>eNO ee<br>90 90<br>60 60<br>lL RM\ |<br>ea)ANNE eee eee<br>30 30<br>0 cea 0 a<br>PAR NE |<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T j=175°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 CJ 1000 a<br>IC=38A pe td(off)<br>2.7 E IC=75A L} po tf hz<br>_ IC=100A re ee ee ee ee td(on) ||<br>IC=150A tr<br>PJ } pe e<br>Z 2.4 — ee ee... 2<br>2.1<br>|: C O C ee)i ef},A S<br>Bf7) 1.8 eed_ ” =<br>Ww _- = ,<br>= --—T _— ke a<br>1.5 100<br>= — _|—— 7<br>uw ~ = gr= a eeeer<br>ee ee ee<br>1.2<br>fe) —————_— ee a eeee<br>E POO’ ASS<br>0.9 S fof epaesarot<br>z =<br>0.6<br>Ce<br>0.3<br>0.0 10<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V) Figure 8. (inductive load, _T_ j =175°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=3,6 Ω ,Dynamic test Figure E) Datasheet 7 2017-11-15 IKQ100N60T ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1E+4 SS 1000 a a a<br>1I1 ttd(off)f (aa SC || ttd(off)f aa eeee ee ee<br>} td(on) a a I td(on) a<br>tr } I tr a<br>o t S s<br>e e<br>a a eeee<br>= 1000 aaa=<br>z aan ee e e<br>ie) A es<br>im ayA aa a a (|ie)<br>= poof fo | =<br>F2) A>f/f | | >| >| |>| EJt-y7 -© 100 a<br>5 sr =_ 5 a ee ee ee<br>E 2 ; E a<br>ae 100 Leet<br>a<br>a<br>ee<br>22 [a] a = --4-----4-=---<br>a<br>10 10<br>0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br> ## Figure 9. Typical **resistor** **==> picture [149 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, I C =100A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> Figure 10. (inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =100A, _r_ G=3,6 Ω ,Dynamic test circuit Figure E) **==> picture [519 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 7 30<br>typ. Eoff<br>min. Eon<br>max. Ets<br>6<br>Ww Tse 25<br>F@a ~ oe & /<br>5<br>Q —— ~~ a /<br>20<br>4<br>15<br>or ~~. — o / WA<br>a<br>Wu 3 7<br>= ~ g / 7<br>bE= ~ ==r //<br>= ) 10 Z<br>ulb 2 FE= oa7Y a 7<br>- 5 L [“] Z = [Pm]<br>1 aJee<br>a<br>0 0<br>0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 200<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Gate-emitter of junction ( _I_ C=1.2mA) Figure 12. (inductive load, _T_ j =175°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=3,6 Ω ,Dynamic test Figure E) 8 Datasheet 2017-11-15 IKQ100N60T ## TRENCHSTOP[TM] **==> picture [230 x 341] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>Eoff<br>Eon<br>Ets<br>60<br>5 /<br>7p) 50 /<br>LU 7<br>(ep) Yo<br>> 40<br>i /<br>30<br><= 4<br>2 7 <j<br>20<br>~ y<br>® “O < a =a<<br>10<br>0<br>TO<br>0 10 20 30 40 50 60 70 80<br>r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses asa<br>function of gate resistor<br>(inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, I C =100A,Dynamic test circuit in<br>Figure E)<br>E<br>**----- End of picture text -----**<br> **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Eoff<br>9 Eon<br>Ets<br>ys 8 Z<br>7p) eae<br>Lu 7 FO<br>(op) “7<br>6<br>> a _ —_——<br>a 5 An<br><= 4 a=<br>2 = ——<br>3<br>~<br>2<br>eT<br>1<br>0<br>sp | tT tt<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>E<br>**----- End of picture text -----**<br> Figure 14. **==> picture [154 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, V CE =400V, V GE=15/0V,<br>I C =100A, r G=3,6 Ω ,Dynamic test circuit<br>Figure E)<br>**----- End of picture text -----**<br> **==> picture [474 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 16.0 16<br>Eoff 120V<br>Eon 480V<br>14.0 = E | ts 14 ‘ /<br>ec /<br>12.0 12<br>& jy = D<br>(0 “ W /<br>icp)“ a“ 4EE / /<br>e)a2 10.0 7 FZ oOa 10 /<br>“eoaaa ><br>o 8.0 7 iv uwor 8 a a<br>2 k<br>Lu “ a =<br>“ 7 Za =~ ==<br>6.0 6<br>= “ - EK<br>=aZ~<br>4.0 4<br>2.0 2<br>0.0 0<br>200 300 400 500 0 100 200 300 400 500 600 700<br>V CE COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> Figure 15. Figure 16. Typical ( _I_ C=100A) **==> picture [151 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T j =175°C, V GE=15/0V,<br>I C =100A, R G=3,6 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> 9 Datasheet 2017-11-15 IKQ100N60T ## TRENCHSTOP[TM] **==> picture [230 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 1600<br>x 1400<br>1200<br>4<br>Wa<br>(oe)7 1000800 eaeua Va<br>A<br>4<br>600<br> O 400<br>.<br>200<br>0<br>12 13 14 15 16 17 18 19 20<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC)<br>**----- End of picture text -----**<br> **==> picture [250 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> [—_ || dd<br>Cies<br>Coes<br>Cres<br>== --—+—_+} +— x<br>1E+4<br>HJ | | |<br>a e seee eee ees<br>a<br>a ec<br>_<br>oa a<br>1000<br>7xt SSeSa a 7<br>i a ss (oe)7<br>5)x poaena<br>a. eeeee eee eee<br>100<br>(_—— —————] O<br>a .<br>aeees<br>10<br>0 5 10 15 20 25 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>I C(SC)<br>**----- End of picture text -----**<br> Figure 17. Figure 18. ( _V_ GE =0V, f=1MHz) ( _V_ CE 400V, _T_ j 150°C) **==> picture [469 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>Ie TTT © TT<br>0.1<br>Ww Ww |<br>S > O Pn<br>= 10 aN | Zz PIETPZSee A<br>O NI a PAT TINE tS TIE TT<br>D=0.5<br>2 BER IE<br>0.2<br>8 aN eee aio 0.1<br>0.05<br>E NX =z Ee<br>0.02<br>0.01<br>5 6 ON~ uwT Iea)"] sill LLCTgill single pulse<br>0.01<br>a 5 a<br>) A<br>= Yt A Aet<br>bE ‘ 4 2<br>4<br>eS) < en Ae | -- |||<br>a 2 fe an att KET |<br>i: 1 2 3 4<br>ri[K/W]: 0.03045787 0.04949446 0.1280814 3.4E-3<br>τ i[s]: 2.0E-4 2.1E-3 0.01548802 0.2130233<br>| aH oe [PANUPT AMEN<br>0 0.001<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal impedance as a<br>gate-emitter voltage function of pulse width for different duty<br>( V CE =400V, startat T j =25°C, T jmax ≤ 150°C) cycles D<br>t SC thJC<br>Z<br>**----- End of picture text -----**<br> **==> picture [32 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> ( D = t p/T)<br>**----- End of picture text -----**<br> 10 Datasheet 2017-11-15 IKQ100N60T ## TRENCHSTOP[TM] **==> picture [477 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br>a em T ——— j=25°C, IF = 100A<br>Tj=175°C, IF = 100A<br>a= 0.1 aTSTMZaTTT L ealeselV UT 700 — ee<br>S ECHHIEHTHESTREET 2 600<br>Zz Sern<br>4S TM TTT PSS ZINEA CTTTTT = ~“ ‘“<br>7 PEI PT TT ANT TET = \<br>D=0.5 500<br>tag A7A 0.2<br>0.1<br>0.05<br>= a a 0.02 AVI & 400 OPN<br>$e 0.01 ><br>: I Tg PLN.<br>: A od single pulse i SOS<br>ge i ~<br>WwZoO 0.01 e eeTrree | | 300 SN<br>Zz TM TI TTT > |<br>200<br>© i24 Fe Re-- [Po|| wy Pe) | fp PR<br>FEST? TTA mn Ut | 100 P) ff py de<br>i: 1 2 3 4<br>Hn ri[K/W]: 0.05376081 0.11574 0.1831625 4.6E-3<br>τ i[s]: 2.0E-4 2.2E-3 0.01444578 0.2132621<br>bl<br>0.001 0<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 500 600 700 800 900 1000 1100 1200<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>thJC<br>Z<br>**----- End of picture text -----**<br> Figure 21. _**D**_ Figure 22. ( _V_ R ( _D_ = _t_ p/T) **==> picture [476 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 10 60<br>Tj=25°C, IF = 100A Tj=25°C, IF = 100A<br>9 Tj=175°C, IF = 100A Tj=175°C, IF = 100A<br>50<br>es L i d er | —<br>8<br>2 z /<br>rn ke<br>cc 7 e eoc 40 J<br>pt |ts 7<br>6<br>: © y<br>(aaee te Zz<br>5 30<br>Ww Oo i<br>ee<br>ngWwW 4 vd<br>20<br>pilot e at<br>3<br>eei 2 2<br>10<br>1<br>0 0<br>500 600 700 800 900 1000 1100 1200 500 600 700 800 900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br> Figure 23. **==> picture [14 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V R<br>**----- End of picture text -----**<br> Figure 24. ( _V_ R 11 Datasheet 2017-11-15 IKQ100N60T ## TRENCHSTOP[TM] **==> picture [472 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 0 T es j=25°C, IF = 100A 300 Tj=25°C / /<br>-200 < Tj=175°C, I = F = 100A 250 Tj=175°C [,/<br>a “XN<br>iS) -400 \ ——~ Zz 200 j!<br>iGE(o} \ \ te3 I /<br>2 -600 \ Qa 150 /<br>% \ &<br>8 5<br>3 \ e)<br>2; -800 re: 100 /<br>. \ ]<br>\<br>\/<br>-1000 50<br>\<br>7<br>mA<br>-1200 0<br>500 600 700 800 900 1000 1100 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 25. Figure 26. **==> picture [14 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> ( V R<br>**----- End of picture text -----**<br> **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 2.50<br>IF=38A<br>IF=75A<br>2.25 IF=100A<br>IF=150A<br>2.00<br>Ww<br>4 1.75<br>ke<br>I<br>><br>Q 1.50<br>ow i<br><x<br>oo 1.25 -————_|ee<br>1.00<br>0.75<br>0.50<br>0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 27. 12 Datasheet 2017-11-15 IKQ100N60T **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �series ## **Package Drawing PG-TO247-3-46** **==> picture [174 x 343] intentionally omitted <==** **==> picture [52 x 258] intentionally omitted <==** **==> picture [357 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663<br>EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br> 13 V�2.3 2017-11-15 Datasheet IKQ100N60T **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �series ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.3 2017-11-15 Datasheet IKQ100N60T **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �series ## **Revision�History** IKQ100N60T ## **Revision:�2017-11-15,�Rev.�2.3** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2014-11-03|Final data sheet| |2.2|2014-11-18|Update of Transconductancegfs| |2.3|2017-11-15|Minor change Fig. 20 and Fig. 21| 15 V�2.3 2017-11-15 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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