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IKQ100N120CH7XKSA1
IGBT, 166 A, 1.7 V, 721 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP IGBT 7 Series
- Power Dissipation: 721W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 166A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.95 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
**IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode** ## **Features** - VCE = 1200 V - IC = 100 A - Maximum junction temperature Tvjmax = 175°C - Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode - Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C - Optimized for high efficiency in high speed hard switching topologies (2-L inverter, 3-L NPC T-type, ...) - Easy paralleling capability due to positive temperature coefficient in VCEsat - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ ## **Potential applications** - Industrial UPS - EV-Charging - String inverter - Welding ## **Product validation** - Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 ## **Description** **==> picture [68 x 84] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> **Type Package Marking** IKQ100N120CH7 PG-TO247-3-PLUS-NN3.7 K100MCH7 ~~ee~~ Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.10 2023-01-20 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| Datasheet Revision 1.10 2023-01-20 2 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Internal emitter<br>inductance measured 5<br>mm (0.197 in.) from case|_L_E|||13||nH| |Storage temperature|_T_stg||-55||150|°C| |Soldering temperature|_T_sold|wave soldering 1.6 mm (0.063 in.) from case<br>for 10 s|||260|°C| |Thermal resistance,<br>junction-ambient|_R_th(j-a)||||40|K/W| |IGBT thermal resistance,<br>junction-case|_R_th(j-c)|||0.16|0.21|K/W| |Diode thermal resistance,<br>junction-case|_R_th(j-c)|||0.3|0.39|K/W| ## **2 IGBT** |**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**|||| |---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||1200|V| |DC collector current,<br>limited by Tvjmax|_I_C|limited by bondwire|_T_c= 25 °C|166|A| ||||_T_c= 100 °C|139|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpulse|||400|A| |Turn-of safe operating<br>area||_V_CC≤ 800 V,_V_CE,peak< 1200 V,_V_GE= 0/15 V,<br>_R_Gof≥ 4 Ω,_T_vj≤ 175 °C||400|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p≤ 0.5 µs,_D_< 0.001||±25|V| |Power dissipation|_P_tot||_T_c= 25 °C|721|W| ||||_T_c= 100 °C|361|| **Table 3 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CEsat|_I_C= 100 A,_V_GE= 15 V|_T_vj= 25 °C||1.7|2.15|V| ||||_T_vj= 175 °C||2||| ## **(table continues...)** Datasheet Revision 1.10 2023-01-20 3 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 1.6 mA, VCE= VGE||4.7|5.5|6.2|V| |Zero gate-voltage collector<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||40|µA| ||||_T_vj= 175 °C||8500||| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 100 A,_V_CE= 20 V|||180||S| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||13||nF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||240||pF| |Reverse transfer<br>capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||72||pF| |Gate charge|_Q_G|_I_C= 100 A,_V_GE= 15 V,_V_CC=|960 V||696||nC| |Turn-on delay time|_t_d(on)|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 7 Ω,_R_G(of)= 7 Ω|_T_vj= 25 °C,<br>_I_C= 100 A||66||ns| ||||_T_vj= 175 °C,<br>_I_C= 100 A||63||| |Rise time (inductive load)|_t_r|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 7 Ω,_R_G(of)= 7 Ω|_T_vj= 25 °C,<br>_I_C= 100 A||59||ns| ||||_T_vj= 175 °C,<br>_I_C= 100 A||70||| |Turn-of delay time|_t_d(of)|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 7 Ω,_R_G(of)= 7 Ω|_T_vj= 25 °C,<br>_I_C= 100 A||547||ns| ||||_T_vj= 175 °C,<br>_I_C= 100 A||607||| |Fall time (inductive load)|_t_f|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 7 Ω,_R_G(of)= 7 Ω|_T_vj= 25 °C,<br>_I_C= 100 A||30||ns| ||||_T_vj= 175 °C,<br>_I_C= 100 A||90||| |Turn-on energy|_E_on|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 7 Ω,_R_G(of)= 7 Ω|_T_vj= 25 °C,<br>_I_C= 100 A||6.7||mJ| ||||_T_vj= 175 °C,<br>_I_C= 100 A||10.6||| |Turn-of energy|_E_of|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 7 Ω,_R_G(of)= 7 Ω|_T_vj= 25 °C,<br>_I_C= 100 A||2.52||mJ| ||||_T_vj= 175 °C,<br>_I_C= 100 A||4.52||| **(table continues...)** Datasheet Revision 1.10 2023-01-20 4 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** **3 Diode** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Total switching energy|_E_ts|_V_CC= 600 V,_V_GE= 0/15 V,<br>_R_G(on)= 7 Ω,_R_G(of)= 7 Ω|_T_vj= 25 °C,<br>_I_C= 100 A||9.22||mJ| ||||_T_vj= 175 °C,<br>_I_C= 100 A||15.1||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _Note: Electrical Characteristic, at T_ vj _= 25°C, unless otherwise specified._ ## **3 Diode** |**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**|||| |---|---|---|---|---|---| |**Table 4**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Diode forward current,<br>limited by Tvjmax|_I_F|limited by bondwire|_T_c= 25 °C|142|A| ||||_T_c= 88 °C|100|| |Diode pulsed current, tp<br>limited by Tvjmax|_I_Fpulse|||400|A| |Power dissipation|_P_tot||_T_c= 25 °C|385|W| ||||_T_c= 100 °C|192|| ## **Table 5 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 100 A|_T_vj= 25 °C||2.5|3|V| ||||_T_vj= 175 °C||2.3||| |Diode reverse recovery<br>time|_t_rr|_V_R= 600 V,_R_G(on)= 7 Ω|_T_vj= 25 °C,<br>_I_F= 100 A||148||ns| ||||_T_vj= 175 °C,<br>_I_F= 100 A||255||| |Diode reverse recovery<br>charge|_Q_rr|_V_R= 600 V,_R_G(on)= 7 Ω|_T_vj= 25 °C,<br>_I_F= 100 A||3.08||µC| ||||_T_vj= 175 °C,<br>_I_F= 100 A||9.1||| |Diode peak reverse<br>recovery current|_I_rrm|_V_R= 600 V,_R_G(on)= 7 Ω|_T_vj= 25 °C,<br>_I_F= 100 A||39||A| ||||_T_vj= 175 °C,<br>_I_F= 100 A||68||| **(table continues...)** Datasheet Revision 1.10 2023-01-20 5 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** **3 Diode** |**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode peak rate of fall of<br>reverse recovery current|_di_rr_/dt_|_V_R= 600 V,_R_G(on)= 7 Ω|_T_vj= 25 °C,<br>_I_F= 100 A||-359||A/µs| ||||_T_vj= 175 °C,<br>_I_F= 100 A||-431||| |Reverse recovery energy|_E_rec|_V_R= 600 V,_R_G(on)= 7 Ω|_T_vj= 25 °C,<br>_I_F= 100 A||0.93||mJ| ||||_T_vj= 175 °C,<br>_I_F= 100 A||3.09||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ _Dynamic test circuit, parasitic inductance L_ σ _= 30 nH, C_ σ _= 18 pF_ Datasheet Revision 1.10 2023-01-20 6 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **Reverse bias safe operating area** IC = f(VCE), IC = f(VCE) Tvj ≤ 175 °C, VGE = 0/15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>1 10 100 1000<br>**----- End of picture text -----**<br> ## **Typical output characteristic** IC = f(VCE) T = 25 °C vj **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 1 2 3 4 5<br>**----- End of picture text -----**<br> **==> picture [141 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> Typical output characteristic<br>IC = f(VCE)<br>T = 25 °C<br>vj<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 1 2 3 4 5<br>**----- End of picture text -----**<br> ## **Typical transfer characteristic** IC = f(VGE) VCE = 20 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>4 5 6 7 8 9 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-20 7 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical collector-emitter saturation voltage as a function of junction temperature** VCEsat = f(Tvj) ## VGE = 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of collector current** t = f(IC) ## **Gate-emitter threshold voltage as a function of junction temperature** VGEth = f(Tvj) IC = 1.6 mA **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> **Typical switching times as a function of gate resistor** t = f(RG) IC = 100 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 7 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>25 50 75 100 125 150 175 200<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>4 8 12 16 20 24<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-20 8 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching times as a function of junction Typical switching energy losses as a function of temperature collector current** t = f(Tvj) IC = 100 A, VCC = 600 V, VGE = 0/15 V, RG = 7 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of gate resistor** E = f(RG) IC = 100 A, VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 24<br>20<br>16<br>12<br>8<br>4<br>0<br>4 8 12 16 20 24<br>**----- End of picture text -----**<br> E = f(IC) **==> picture [204 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> VCC = 600 V, Tvj = 175 °C, VGE = 0/15 V, RG = 7 Ω<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>25 50 75 100 125 150 175 200<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of junction temperature** E = f(Tvj) IC = 100 A, VCC = 600 V, VGE = 0/15 V, RG = 7 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 18<br>15<br>12<br>9<br>6<br>3<br>0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-20 9 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching energy losses as a function of collector emitter voltage** ## E = f(VCE) ## **Typical gate charge** VGE = f(QG) IC = 100 A IC = 100 A, VGE = 0/15 V, Tvj = 175 °C, RG = 7 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 21<br>18<br>15<br>12<br>9<br>6<br>3<br>0<br>400 500 600 700 800<br>**----- End of picture text -----**<br> ## **Typical capacitance as a function of collector-emitter voltage** C = f(VCE) f = 100 kHz, VGE = 0 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 150 300 450 600 750<br>**----- End of picture text -----**<br> ## **IGBT transient thermal impedance as a function of pulse width** Zth(j-c) = f(tp) D = tp/T **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.0001<br>1E-5<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-20 10 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Diode transient thermal impedance as a function of pulse width** **==> picture [56 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> Zth(j-c) = f(tp)<br>**----- End of picture text -----**<br> ## **Typical diode forward current as a function of forward voltage** IF = f(VF) **==> picture [36 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> D = tp/T<br>**----- End of picture text -----**<br> **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.0001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br> ## **Typical diode forward voltage as a function of junction temperature** VF = f(Tvj) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>3<br>2<br>1<br>0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 1 2 3 4 5 6<br>**----- End of picture text -----**<br> ## **Typical diode current slope as a function of gate resistor** diF/dt = f(RG) VR = 600 V, IF = 100 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1500<br>1300<br>1100<br>900<br>700<br>500<br>4 8 12 16 20 24<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-20 11 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical reverse recovery time as a function of diode current slope** trr = f(diF/dt) VR = 600 V, IF = 100 A **Typical reverse recovery charge as a function of diode current slope** Qrr = f(diF/dt) VR = 600 V, IF = 100 A **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 350 15<br>300 12<br>250 9<br>200 6<br>150 3<br>100 0<br>500 800 1100 1400 1700 2000 500 800 1100 1400 1700 2000<br>Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery<br>current slope current as a function of diode current slope<br>Irrm = f(diF/dt) dirr/dt = f(diF/dt)<br>VR = 600 V, IF = 100 A VR = 600 V, IF = 100 A<br>100 -100<br>90<br>80 -200<br>70<br>60 -300<br>50<br>40 -400<br>30<br>20 -500<br>10<br>0 -600<br>500 800 1100 1400 1700 2000 500 800 1100 1400 1700 2000<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-20 12 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **==> picture [540 x 318] intentionally omitted <==** **----- Start of picture text -----**<br> Typical reverse energy losses as a function of diode<br>current slope<br>Erec = f(diF/dt)<br>VR = 600 V, IF = 100 A<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>500 800 1100 1400 1700 2000<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2023-01-20 13 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **5 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **5 Package outlines** ## **PG-TO247-3-PLUS-NN3.7** |-<br>NUMBER:|**PG-TO247-3-U01**<br>|**PG-TO247-3-U01**<br>| |---|---|---| |**DIMENSIONS**|**MILLIMETERS**|| ||MIN.|MAX.| |**A**|4.90|5.10| |**A1**|2.31|2.51| |**A2**|1.90|2.10| |**b**|1.16|1.26| |**b1**|---|2.25| |**b2**|1.96|2.06| |**b3**|---|3.25| |**b4**|2.96|3.06| |**c**|0.59|0.66| |**D**|20.90|21.10| |**D1**|16.25|16.85| |**D2**|1.05|1.35| |**D3**|0.58|0.78| |**E**|15.70|15.90| |**E1**|13.10|13.50| |**E2**|1.35|1.55| |**e**|5.44(BSC)|| |**N**|3|| |**L**|19.80|20.10| |**L1**|3.90|4.30| |**R**|1.90|2.10| ## **Figure 1** Datasheet Revision 1.10 2023-01-20 14 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** ## **6 Testing conditions** **==> picture [185 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Testing conditions<br>**----- End of picture text -----**<br> **==> picture [502 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V C C<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.10 2023-01-20 15 **IKQ100N120CH7 High speed 1200 V TRENCHSTOP[™] IGBT 7 Technology** **==> picture [105 x 47] intentionally omitted <==** **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2022-05-02|Target datasheet| |0.20|2022-06-01|Editorial changes| |1.00|2022-11-23|Final datasheet| |1.10|2023-01-20|Change of product outline drawing on page 14| Datasheet Revision 1.10 2023-01-20 16 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2023-01-20 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2023 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABB403-004** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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