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IKP40N65H5XKSA1
IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-220, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:255W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 255W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.06 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1 **==> picture [480 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1<br>fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode 2<br>** QualifiedMaximum accordingjunction temperature to JEDEC for175°C target applications &y /<br>¢ Pb-free lead plating; ROHS compliant a ;<br>*« Complete product spectrum and PSpice Models:<br>1<br>http://www.infineon.com/igbt/ 2 3<br>Applications:<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKP40N65H5|650V|40A|1.65V|175°C|K40EH5|PG-TO220-3| |IKW40N65H5|650V|40A|1.65V|175°C|K40EH5|PG-TO247-3| 2 **==> picture [146 x 65] intentionally omitted <==** ## IKP40N65H5,�IKW40N65H5 High�speed�switching�series�fifth�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing PG-TO220-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Package Drawing PG-TO247-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 3 Rev.�2.1,��2015-05-06 IKP40N65H5,�IKW40N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||74.0<br>46.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||120.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||36.0<br>21.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||250.0<br>125.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering 1.6mm (0.063in.) from case for 10s|PG-TO220-3<br>PG-TO247-3||260<br>260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.60|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)|||1.80|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|PG-TO220-3<br>PG-TO247-3||62<br>40|K/W| Rev.�2.1,��2015-05-06 4 IKP40N65H5,�IKW40N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|50.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF| |Output capacitance|_C_oes||-|50|-|| |Reverse transfer capacitance|_C_res||-|9|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|95.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E|PG-TO220-3<br>PG-TO247-3|-|7.0<br>13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns| |Rise time|_t_r||-|12|-|ns| |Turn-off delaytime|_t_d(off)||-|165|-|ns| |Fall time|_t_f||-|13|-|ns| |Turn-on energy|_E_on||-|0.39|-|mJ| |Turn-off energy|_E_off||-|0.12|-|mJ| |Total switchingenergy|_E_ts||-|0.51|-|mJ| Rev.�2.1,��2015-05-06 5 IKP40N65H5,�IKW40N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns| |---|---|---|---|---|---|---| |Rise time|_t_r||-|4|-|ns| |Turn-off delaytime|_t_d(off)||-|190|-|ns| |Fall time|_t_f||-|24|-|ns| |Turn-on energy|_E_on||-|0.09|-|mJ| |Turn-off energy|_E_off||-|0.05|-|mJ| |Total switchingenergy|_E_ts||-|0.14|-|mJ| |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|62|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.45|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|12.5|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-290|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1000A/µs|-|30|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.22|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|10.7|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-700|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns| |Rise time|_t_r||-|12|-|ns| |Turn-off delaytime|_t_d(off)||-|195|-|ns| |Fall time|_t_f||-|22|-|ns| |Turn-on energy|_E_on||-|0.54|-|mJ| |Turn-off energy|_E_off||-|0.22|-|mJ| |Total switchingenergy|_E_ts||-|0.76|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns| |Rise time|_t_r||-|5|-|ns| |Turn-off delaytime|_t_d(off)||-|240|-|ns| |Fall time|_t_f||-|33|-|ns| |Turn-on energy|_E_on||-|0.15|-|mJ| |Turn-off energy|_E_off||-|0.07|-|mJ| |Total switchingenergy|_E_ts||-|0.22|-|mJ| 6 Rev.�2.1,��2015-05-06 **==> picture [146 x 65] intentionally omitted <==** ## IKP40N65H5,�IKW40N65H5 ## High�speed�switching�series�fifth�generation **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|90|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|1.00|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|17.5|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-220|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1000A/µs|-|52|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.49|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|15.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-430|-|A/µs| Rev.�2.1,��2015-05-06 7 **==> picture [474 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 275<br>100 A 250<br>225<br>PENI SESCNALeSCIT X<br>_ PF TNE ON TN NIT 200 PN FFF]<br>< EHTS 2 175 ee ee<br>10<br>tp=1µs<br>150<br>a — 10µs er<br>O NE NSN = @ 125<br>50µs<br>eae EN Qo<br>pete 100µs § 100 [TK<br>SL 1 eS 200µs 8 NN<br>75<br>500µs<br>50<br>Peo DC .<br>25<br>FH EEE<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 Ss 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>80 120<br>70 TLL] AOA<br>100<br>VGE=20V<br>P|. eA<br>60<br>~tX -en//)|a7eann 18V<br>80<br>LONE AYA 15V<br>50<br>: < BL AT<br>12V<br>et 40 TNL ds 60 10V eg<br>8V<br>BNE pee<br>30<br>7V<br>40<br>° 6V<br>BNC 8 egies<br>20<br>ff SL AW<br>5V<br>20<br>10 PAY ER<br>PP ePLsATse<br>0 0 KET<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br> 8 **==> picture [472 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> 120 120<br>Tj=25°C<br>Tj=150°C<br>Ty eae<br>100 100<br>SRA) ae ee e ee<br>VGE=20V<br>2 eee. 18V<br>eee) 80 ee ee 80 ee<br>15V<br>12V<br>PC tee bE<br>eed) 60 10V SAREE 60 eee<br>Ss 8V ee<br>7V<br>4 40 | L ipsetey yges 40 | te|<br>6V<br>e/a ee ee<br>5V<br>20 20<br>PRC,<br>ie)eeeeeee<br>EVANS eee<br>0 0<br>0 1 2 3 4 5 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 2.50 1000<br>IC=10A I td(off) ——— E<br>IC=20A tf<br>2.25 IC=40A td(on)<br>tr<br>-= E] | ER =<br>2 2.00 I ns<br>P L 100 e ee<br>1.75<br>a a aan Ceer |,= Looea ee ea ee ee<br>Bey yg ee<br>1.50<br>E —r= 2 a ee<br>SP EEEFETT]E ASS<br>1.25<br>es f++++++§ 10 | | | |<br>ee<br>8 1.00 a ee ee<br>ooo ——————<br>0.75<br>PPP) eee<br>0.50 1<br>0 25 50 75 100 125 150 175 0 20 40 60 80 100 120<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V) Figure 8. (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=15 Ω , Dynamic test Figure E) 9 **==> picture [230 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a SS ES ES eS<br>t td(off) ee ee ee es ee<br>tf<br>td(on)<br>I pp ee<br>tr<br>| pes<br>100<br>:= a | te | tt<br>uw= poaeeSS eneee eee<br>F re ee ee ee ee ee eee<br>O eeeee<br>a ca rc<br>Bee<br>=s 10 aapf _}es __} __}-__}__}_}__|<br>a<br>po<br>a es ee<br>Pot | | | hE TT<br>1<br>5 15 25 35 45 55 65 75 85<br>r G , GATE RESISTOR [ Ω ]<br>t<br>**----- End of picture text -----**<br> Figure 9. Typical switching times as a **resistor** (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _I_ C =20A,Dynamic test Figure E) **==> picture [233 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a a<br>t td(off) a<br>tf<br>td(on)<br>I a ee ee ee<br>tr<br>| eeee ee<br>100<br>e ETfi, | |[|<br>=Oe)= aesa ess e e eeee ee<br>a eeee<br>eee a ee<br>EE Le<br>=- 10 pooperaa esssee e sy<br>a a a<br>a ee<br>a eeee<br>a a<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br> Figure 10. (inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =20A, _r_ G=15 ,Dynamic test circuit in Figure E) **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 5.5 8<br>typ. Eoff<br>min. Eon<br>| | /<br>5.0 max. 7 Ets<br>Ww ~sA /<br>F 4.5 ~~ £& 6 /<br>4.0<br>2 ' ~s S g 5 / 7 |<br>3.5 /<br>4<br>Ww 3.0 ~ ~S oO 77 /<br>= 2.5 ™~ = 3 / WA<br>Lu ~ = 2 7 1<br>2.0<br>(ep) 7 ZA<br>-<br>1<br>1.5<br>1.0 0<br>0 25 50 75 100 125 150 0 20 40 60 80 100 120<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Gate-emitter threshold ( of _I_ C=0.4mA) junction temperature Figure 12. (inductinductive “load, collector _T_ vj = Sanrent, _V_ CE=400V, _V_ GE =15/0V, _r_ G=15 Ω ,Dynamic test Figure E) 10 **==> picture [474 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 0.8<br><<br>Eoff a Eoff oa<br>Eon 7 Eon a<br>1.4 Ets 0.7 Ets<br>x a<br>J “ ws peas<br>£& 1.2 “4 £ 0.6 u-<br>uw “ uw 7<br>on 7 on Dee _——<br>op) 7 ¢p) Pian a<br>e) 1.0 “Ze ro) 0.5<br>a) a - pan —<br>> “ oT > “7<br>O “7 O a<br>x 0.8 ra _ — x 0.4 _—<br>uw LZ a Ww<br>Z 0.6 “ < — Z 0.3<br>=2=<br>Raa7 Ra<br>0.4 0.2<br>0.2 0.1<br>0.0 0.0<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =20A, Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [474 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0 16<br>Eoff 130V<br>EV Eon | |e 520V |<br>0.9<br>Ets 14<br>Ss 0.8<br>oe ee ee /<br>icp) ae Ww 12<br>0.7<br>obe | |ed7 71 Q 7<br>8 “oO a F 10 /<br>aa) 0.6 < x o}<br>O “ ow<br>pff 0.5 oe “ < fFaa 8 |e<br>0.4<br>eee e e<br>6<br>x= =a _<br>Z pe < a fi<br>0.3<br>4<br>af<br>- | eT<br>0.2<br>2<br>0.1<br>oT of | |<br>0.0 0<br>200 250 300 350 400 450 500 0 20 40 60 80 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> Figure 15. Figure 16. Typical ( _I_ C=40A) **==> picture [91 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br> _I_ C =20A, _r_ G=15 Figure E) 11 **==> picture [469 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> 1E+4 1<br>Cies<br>I Coes a See ie fo fee eee<br>| Cres a ce<br>\ |J _________| __ __ __| 3 ce<br>p o p alll CE ee<br>D=0.5<br>1000 te| 8 eel<br>0.2<br>S SS 2 0.1 Ue Ate 0.1 lllil<br>— Ww ee 0.05 Ch<br>So fii | | | | mt i8Ae 0.02<br>Z 100 H NP z n/a 0.01<br>O es MT<br>2.t a——————— ———— liWi enwgnc reel ui single pulse<br>SRS eeiH IL<br>0.01<br>10 po—~__| n eeLT TA TT aoeie R gil!<br>SSS— S35Zz CTFnn PA" GH | cael!<br>a a iar AME TUTTI TIME | cere: corral. Il<br>a HHI TULUM ELI UIT UT<br>ee [ i: 1 2 3 4<br>ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708<br>τ i[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881<br>1 PF | | | eeffee| 0.001 | | | TT<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> ( _V_ GE **==> picture [483 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 130<br>Tj=25°C, IF = 20A<br>L ULU 1 acl = Tj=150°C, IF = 20A<br>= Se ee eS 120<br>2 EHS HaHa .<br>D=0.5 110<br>WWS tp6H og<br>0.2<br>e cectaos7/0 HO & ‘<br>7) 0.1 cM ef 100 PSK)dd<br>i Ti a TT 0.05 2 XN<br>0.1<br>cralx SerenSS||a 2A a 0.02 || Lu7Oe> 90 S ~ ™ =<br>0.01<br>S ZA aa — _<br>Y er | single pulse UM TC = 80 PPP | |) py<br>Wd FHA Cae A 00 MY<br>= Coe mT Le og INO<br>70<br>TMA) & +S<br>0.01<br>Zz eo Oe Ri Ro nit} Ww<br>o UN LIAN AE a ETUC S NN<br>Fea° eeeFCMPLMi echUMCa GHG coe, ostloe, |I 60 a Se<br>I ALT? TTT coo ooo Tp<br>TTT Laan |] ] ]f i: SP 1 2 3 50<br>ri[K/W]: 0.6701584 0.775759 0.3540826<br>τ i[s]: 3.4E-4 4.7E-3 0.04680901<br>iil a A _ i<br>0.001 40<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 500 700 900 1100 1300 1500<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 19. Diode function ( _D_ = _t_ p/T) Figure 20. ( _V_ R=400V) 12 **==> picture [476 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2 20<br>Tj=25°C, IF = 20A 19 Tj=25°C, IF = 20A<br>E Tj=150°C, IF = 20A T e Tj=150°C, I e F = 20A s<br>18<br>1.0 17<br>ge Li | pt ey 2 Pe r<br>16<br>pe CERT] Fobee<br>15<br>0.8 14<br>: 8 PPE TTT ery<br>13<br>e CCC § eeeer<br>12<br>B 0.6 COCCCCAC) § 11 Sees<br>rf a<br>10<br>pCO) Eee<br>@ 0.4 jose 98<br>7<br>Py |) tty yd fy P| tt | | tT<br>6<br>TTT rT P| tt | | tT<br>0.2 5 Pt PE TT [tT]<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br> Figure 21. ( _V_ R=400V) Figure 22. ( _V_ R=400V) **==> picture [472 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> 0 Se| 60<br>Tj=25°C, IF = 20A Tj=25°C<br>Tj=150°C, IF = 20A Tj=150°C<br>-50 esee e e ee /<br>50<br>Z PL E TE :<br>-100<br>: e e<br>ee ee<br>40<br>-150<br>3 fe e | | | jf) |<br>efPN<br>-200 30<br>A© AORELO| LyQTe eyEe<br>-250<br>ne)popes eoO 20 Lg<br>eee><br>-300<br>10<br>-350<br>LPL ETT yA<br>PLETE ELL f<br>-400 0 | ley |||<br>500 700 900 1100 1300 1500 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 23. Figure 24. ( _V_ R=400V) 13 **==> picture [233 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>IF=10A<br>pt IF=20A<br>IF=40A<br>1.8<br>po |<br>ee [s] [ee]<br>ee 1.6 eee e<br>e 1.4 fo | |<br>1.2<br>2.oe<br>es eeee<br>1.0<br>pot ft |<br>ee ee<br>0.8<br>P|<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 25. 14 IKP40N65H5,�IKW40N65H5 High�speed�switching�series�fifth�generation **==> picture [146 x 65] intentionally omitted <==** ## **Package Drawing PG-TO220-3** 15 Rev.�2.1,��2015-05-06 IKP40N65H5,�IKW40N65H5 **==> picture [146 x 65] intentionally omitted <==** High�speed�switching�series�fifth�generation ## **Package Drawing PG-TO247-3** 16 Rev.�2.1,��2015-05-06 IKP40N65H5,�IKW40N65H5 **==> picture [146 x 65] intentionally omitted <==** High�speed�switching�series�fifth�generation ## **Testing Conditions** **==> picture [248 x 291] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>**----- End of picture text -----**<br> **==> picture [252 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 17 Rev.�2.1,��2015-05-06 ## IKP40N65H5, IKW40N65H5 ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |1.1|2012-11-09|Preliminarydata sheet| |1.2|2013-12-18|New MarkingPattern| |1.3|2014-12-04|Minor changes Fig.1, Fig.14 and typ. Eoff at 150°C = 0.22mJ| |2.1|2015-05-06|Final data sheet| ## **Information** ## **Warnings** endangered. 18
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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