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IKP28N65ES5XKSA1
IGBT, 38 A, 1.5 V, 130 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:38A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:650V; Tran; Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5 S5
- Power Dissipation: 130W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 38A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 1.58 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
IKP28N65ES5
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TRENCHSTOP [TM] 5 high speed soft switching IGBT copacked with full rated<br>current RAPID 1 fast and soft anti parallel diode<br>Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>« Very Low V CEsat<br>* 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with full rated current RAPID 1 fast antiparallel<br>diode<br>C<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant \<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>3.“zag!<br>Potential Applications: a m. [/]<br>* Drives y A yr<br>+ Industrial Power Supplies , sf S<br>- Industrial SMPS fw of<br>- Industrial UPS es ff ff<br>¢ Metal Treatment G ~<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKP28N65ES5|650V|28A|1.5V|175°C|K28EES5|PG-TO220-3|
Datasheet www.infineon.com
2019-01-25
IKP28N65ES5
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## High�speed�switching�series�5�[th] �generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKP28N65ES5
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## High�speed�switching�series�5�[th] �generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||38.0<br>28.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||40.0<br>27.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||130.0<br>65.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.20|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.50|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|62|K/W|
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## High�speed�switching�series�5�[th] �generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=28.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.50<br>1.72<br>1.85|1.90<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=28.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.59<br>1.60<br>1.56|1.95<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.28mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1400|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=28.0A|-|29.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1200|-|pF|
|Output capacitance|_C_oes||-|38|-||
|Reverse transfer capacitance|_C_res||-|5|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=28.0A,<br>_V_GE=15V|-|50.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=28.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=34.0Ω,_R_G(off)=34.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|28|-|ns|
|Turn-off delaytime|_t_d(off)||-|184|-|ns|
|Fall time|_t_f||-|34|-|ns|
|Turn-on energy|_E_on||-|0.53|-|mJ|
|Turn-off energy|_E_off||-|0.40|-|mJ|
|Total switchingenergy|_E_ts||-|0.93|-|mJ|
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## High�speed�switching�series�5�[th] �generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=14.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=34.0Ω,_R_G(off)=34.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|25|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|193|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|0.25|-|mJ|
|Turn-off energy|_E_off||-|0.15|-|mJ|
|Total switchingenergy|_E_ts||-|0.40|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=28.0A,<br>_di_F_/dt_=1020A/µs|-|73|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|15.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-324|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=14.0A,<br>_di_F_/dt_=1180A/µs|-|61|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.40|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-387|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=28.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=34.0Ω,_R_G(off)=34.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|26|-|ns|
|Rise time|_t_r||-|28|-|ns|
|Turn-off delaytime|_t_d(off)||-|200|-|ns|
|Fall time|_t_f||-|36|-|ns|
|Turn-on energy|_E_on||-|0.65|-|mJ|
|Turn-off energy|_E_off||-|0.50|-|mJ|
|Total switchingenergy|_E_ts||-|1.15|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=14.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=34.0Ω,_R_G(off)=34.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|25|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|220|-|ns|
|Fall time|_t_f||-|48|-|ns|
|Turn-on energy|_E_on||-|0.35|-|mJ|
|Turn-off energy|_E_off||-|0.25|-|mJ|
|Total switchingenergy|_E_ts||-|0.60|-|mJ|
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## High�speed�switching�series�5�[th] �generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=28.0A,<br>_di_F_/dt_=830A/µs|-|95|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.25|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-395|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=14.0A,<br>_di_F_/dt_=1020A/µs|-|78|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.88|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-443|-|A/µs|
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140 40<br>35<br>120<br>TOO Se<br>30<br>No. 100 eN<br>25<br>PEN 80<br>EpA<br>20<br>EOINCETTE FRA<br>60<br>15<br>PLUNGE 40 AG<br>KS Ye fp<br>10<br>20 PON FR<br>5<br>PEN) Eeey<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C T C<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>80 80<br>VGE = 20V VGE = 20V<br>18V 18V<br>70 70<br>Sr, 15V (XO 15V<br>60 14V 60 14V<br>12V 12V<br>50 10V 50 10V<br>8V 8V<br>40 40<br>6V 6V<br>4V 4V<br>30 30<br>20 20<br>10 10<br>KS Of<br>FN<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 | 3.0 0.0 L 0.5 1.0 AN 1.5 2.0 2.5 3.0<br>V CE V CE<br>Figure 3. Figure 4.<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Datasheet
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80<br>70 TTvjvj | = 25°C = 175°C ///<br>_< 60<br>Pa<br>50<br>/<br>ov<br>Oo /<br>w 40 |<br>Ww<br>30<br>20<br>///<br>10<br>0<br>3 4 5 6 7 8 9<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
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2.50<br>IC = 7.5A<br>IC = 14A<br>— 2.25 IC = 28A<br>z<br>Oo<br>Ee 2.00<br>ra<br>rE<br>: 1.75<br>E<br>E 1.50<br>ad<br>1.25<br>5 1.00 po<br>0.75<br>0.50<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 6. Typical a function ( _V_ GE=15V)
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1000 a SS SS SS 1000 a SS SS ES ES<br>|1I ttd(off)f aeSa ee ee ee ee |i| ttd(off)f Eeaee ee a<br>td(on) td(on)<br>tr tr<br>| FE fs F b ee ee ee<br>f p | | CT | PPP<br>poet tT | tt | e e ee<br>— es ea<br>— 100 a SS SS cs 100 a a ee<br>ip) poea es eTee ip) WaaSssea re eeeee<br>uw a a La fT a a ee ee eee<br>= P T ee TT = Ee ee se ee eee eee<br>- a s a ee el ee ee i re eeeeeee<br>Q a ee eeeeee<br>=o ese<br>E “ E weaen Peal<br>= “ = a<br>2)- 10 aa SS 2)- 10 aa ee<br>a<br>a SC a a<br>aa a ee ee ee ee aeeee ee<br>ee ee a Deee<br>PF | | | | rt dT | Pf ft | hc] |<br>1 1<br>0 10 20 30 40 50 60 70 80 90 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
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**----- Start of picture text -----**<br>
T vj =150°C, V CE=400V,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V GE =15/0V, r G=34 Ω<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =28A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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1000<br>oe<br>|1 td(off) se a ee ee<br>I tf Ee ee ee eee _<br>I td(on) a ee<br>tr<br>| eee<br>P|— | {|tT OE|tT ft| ttTE EEft tT| TT} keWgg1<br>e)<br>=ef 100 _ iiteeeitty §a<br>ip) a se ee es es ee _<br>im aa a a ee ee (e)<br>= ee oO<br>- ee eee Wy<br>OQ a la a el ed ed<br><=a ae a -<br>= La<br>eee :<br>2)7 10 aaa ssSSes ee Ww=<br>eg<br>a ee ee ee ee ee ee ee x<br>a a ee ee er)<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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6<br>typ.<br>5<br>4<br>3<br>2<br>1<br>0<br>25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C]<br>**----- End of picture text -----**<br>
Figure 9.
Figure 10.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =28A, _r_ G=34 , Dynamic test circuit in Figure E)
( _I_ C=0.28mA)
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7 2.00<br>Eoff Eoff<br>Eon Eon<br>Ets 1.75 | Ets &?<br>6 a“<br>2 / 2 1.50 a<br>op)Ww 5 7 / ie)Ww aao<br>ep) v2 ep) a<br>aa 4 aa 1.25 7<br>> 4 > roe<br>Lu 72 uu 1.00 4 =<br>Zz Zz ae -<br>Lu 3 2 Ww L -<br>0.75<br>g 71 8 cL peg<br>L L a<br>2<br>: ;Za: aeae<br>= 7 0.50 -<br>¢ .<br>. ¥, ya S| ao<br>1<br>0.25<br>PT tty<br>2 [A]<br>0 0.00<br>0 10 20 30 40 50 60 70 80 90 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=34 Ω , Dynamic test circuit in V GE =15/0V, I C =28A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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1.6 2.00<br>Eoff Eoff<br>Eon Eon<br>1.4 Ets 1.75 Ets<br>oy oy<br>1.2 1.50<br>Ww Ww<br>7) 7) 27<br>o o Pa<br>e) 1.0 e) 1.25 2<br>- a] a<br>O O) Pa<br>na na 7<br>Ww 0.8 Ww 1.00<br>Zz Zz o*<br>Lu Ww Poe<br>0.6 0.75<br>E E oe a<br>= 0.4 jf = 0.50 7 __<br>-_<br>i e e<br>0.2 0.25<br>0.0 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =28A, r G=34 , Dynamic test circuit in I C =28A, r G=34 , Dynamic test circuit in<br>Figure E) Figure E)<br>18 LC 1E+4 oe<br>—_ V CC = 130V H Cies a a<br>—7 V CC = 520V |1 Coes aa aee ee ee ee<br>16 y I Cres eeee ee<br>14<br>1000<br>uw [_<br><xoO 12 J) LL— apoee es<br>FE 2 a eeee<br>e 10 W ee<br>& ee ee<br>100<br>= G ai ee<br>= 8 S)<t py8fe<br>Ww o<br>LI OY, cS)a 2aeee eee, e e eee eee<br>Ee 6 i es ek ee eet<br>10<br>4 a<br>aee<br>po<br>2<br>0 1<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=28A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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1 ee 1 ee<br>> EH er | a<br>= YT a eer ae = |<br>re PT TTT TT eae |<br>WwW a eeent D = 0.5 a D = 0.5<br>S FTE CHM aeCLEANA sy CHIT WwWSe FTN CIE ELAWay, A osu HITE<br>0.2 0.2<br>iii ee 0.1 Ee a 0.1<br>Bull ra "/, n vf’<br>ee)_gong 0.1 SeeieeFEE HEeetay il ai 0.050.02 6OC_ 0.1 ComoneSee eeeAAU A t NI 0.050.02<br>x ee | eal! 1a eg on / AB all ia<br>S or Pee 0.01 1 7, ce 0.01 tC<br>Y SE eA a Y SR Lat 11<br>single pulse single pulse<br>ul a AM i Ba uA a IT<br>F eee— Ayen eA An CTT ZAcc Te AT<br>GMELIN em<br>0.01 ma Mal a 0.01<br>7) TN<br>Zz Fett Rs eenR. ti! ZRe) FerreH Val PLL<br>s Te -- ti] gs eT ew amPA eT RII-- fil<br>i A A i A A i]<br>- Y r | I<br>PNT A EIT ITa TT PIN T cyatir Co=teiRe _|Il<br>} | [UEC i: 1 2 EN 3 ET 4 5 PET 6 } | UT i: 1 2 PT 3 CTPET 4 ot 5 ool 6<br>ri[K/W]: 0.038031 0.347861 0.531161 0.219516 0.014173 2.0E-3 ri[K/W]: 0.049064 0.434767 0.611241 0.230629 0.015435 2.2E-3<br>τ i[s]: 2.9E-5 3.0E-4 2.6E-3 0.012777 0.205304 2.82131 τ i[s]: 3.1E-5 3.1E-4 2.5E-3 0.012964 0.2095 2.750175<br>0.001 fT —dC d 0.001 |<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal resistance Figure 18. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 18. Diode function ( _D_ = _t_ p/T)
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140 1.6<br>Tvj = 25°C, IF = 28A Tvj = 25°C, IF = 28A<br>Tvj = 150°C, IF = 28A Tvj = 150°C, IF = 28A<br>1.4<br>120<br>= of —_<br>£\ 1.2<br>100<br>-=sO _~ <<br>1.0<br>80 NS ag<br>0.8<br>LuWw | | | O PEL EE<br>: an aa :<br>60<br>Pps? PL<br>0.6<br>Ww<br>40<br>0.4<br>20 FEL ELLE<br>0.2<br>0 0.0<br>500 750 1000 1250 1500 1750 2000 2250 2500 500 750 1000 1250 1500 1750 2000 2250 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=400V)
## Figure 20.
( _V_ R=400V)
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35 0<br>Tvj = 25°C, IF = 28A Tvj = 25°C, IF = 28A<br>Tvj = 150°C, IF = 28A Tvj = 150°C, IF = 28A<br>30 -100<br>Fk amet a<br>a 25 7 <, -200<br>a<br>a) / o<br>> 20 /& -300<br>oPi9 15 / ( eoTT re) -400 INN\S|<br>ra LL i aN<br>W 7 g NN<br>uwti 10 52. -500 \ ‘ ~ > —<br>aa x] \ —<br>° 5 Saaeeeee -600 Ot PieK<br>0 -700<br>500 750 1000 1250 1500 1750 2000 2250 2500 500 750 1000 1250 1500 1750 2000 2250 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 21.
Figure 22.
( _V_ R=400V)
( _V_ R=400V)
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80 2.00<br>Tvj = 25°C IF = 7.5A<br>Tvj = 175°C IF = 14A<br>70 1.75 IF = 28A<br>60 1.50<br>x / =.<br>= / Lu<br>50 1.25<br>i £ CT<br>3 40 S 1.00 a —<br>e g<br>S$r= 30 =x 0.75<br>oO<br>20 0.50<br>10 0.25<br>7<br>7<br>0 0.00<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
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## High�speed�switching�series�5�[th] �generation
## **Package Drawing PG-TO220-3**
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## High�speed�switching�series�5�[th] �generation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## High�speed�switching�series�5�[th] �generation
## **Revision�History**
IKP28N65ES5
## **Revision:�2019-01-25,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-01-25|Final data sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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