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IKP20N65H5XKSA1
IGBT, 42 A, 1.65 V, 125 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:42A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:650V; Tra; Available until stocks are exhausted
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 125W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 42A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.15 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IGBT
High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1
## IKP20N65H5
IKP20N65H5
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**----- Start of picture text -----**<br>
High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1<br>fast and soft anti parallel diode<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>«Low Q g<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode C<br>* Maximum junction temperature 175°C :<br>* Qualified according to JEDEC for target applications “4<br>¢ Pb-free lead plating; ROHS compliant © app y<br>* Complete product spectrum and PSpice Models: “Toca<br>http://www.infineon.com/igbt/<br>Applications:<br>* Solar converters Ls<br>¢ Uninterruptible power supplies G C al<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKP20N65H5|650V|20A|1.65V|175°C|K20EH5|PG-TO220-3|
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IKP20N65H5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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High�speed�switching�series�fifth�generation
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## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||42.0<br>21.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||60.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||20.0<br>10.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||125.0<br>63.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||1.20|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.20|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|
Rev.�2.1,��2014-06-11
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=10.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.20mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|24.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1200|-|pF|
|Output capacitance|_C_oes||-|30|-||
|Reverse transfer capacitance|_C_res||-|5|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=20.0A,<br>_V_GE=15V|-|48.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=32.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|156|-|ns|
|Fall time|_t_f||-|13|-|ns|
|Turn-on energy|_E_on||-|0.17|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.23|-|mJ|
Rev.�2.1,��2014-06-11
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IKP20N65H5
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=32.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|168|-|ns|
|Fall time|_t_f||-|36|-|ns|
|Turn-on energy|_E_on||-|0.04|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1200A/µs|-|52|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.27|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-254|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=900A/µs|-|24|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.11|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-660|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=32.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|190|-|ns|
|Fall time|_t_f||-|28|-|ns|
|Turn-on energy|_E_on||-|0.27|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.38|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=32.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|15|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|224|-|ns|
|Fall time|_t_f||-|55|-|ns|
|Turn-on energy|_E_on||-|0.08|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.12|-|mJ|
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IKP20N65H5
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## High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1000A/µs|-|89|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.63|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-191|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|47|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.29|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-402|-|A/µs|
Rev.�2.1,��2014-06-11
7
IKP20N65H5 High speed switching series fifth generation
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100 130<br>Sa 120 Ce<br>a Pith ee ell 110 PN Pf XI<br>2 100<br>eg<br>90<br>SPAM 10 UU) FGA+ + +<br>80<br>DC<br>5 F e F ea €F 70 E oT A<br>60<br>ee 1 P E a Poy of Nf]<br>| I = 50<br>C OTTE<br>1<br>40<br>TM =A =<br>SS Ff Lt | UN I<br>30<br>— eelESSSf tLA<br>20<br>TI PF | | | ut<br>10<br>PAI CTTE, EM eeEEN ee<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>45 60<br>55<br>TT) ee<br>40<br>50<br>35 NOE) eis VGE=18V<br>45<br>- - a 15V AC<br>30 40<br>Ee] NU |LE ee 12V<br>35<br>eee 25 eee 10V eee<br>30 8V<br>pf UNC Ss A eae<br>20<br>25 7V<br>: . 5 fy — |<br>6V<br>15 20<br>By) UN pe<br>5V<br>15<br>PK 10 8 Ee<br>10<br>5<br>5<br>PE TNO) E eK-E E EE E<br>| RYNG EE<br>PN ESF<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
8
High speed switching series fifth generation IKP20N65H5
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**----- Start of picture text -----**<br>
60 60<br>Tj=25°C<br>55 PL EEAlt,AAL ET 55 (= Tj=150°C ee<br>50 50<br>Pty {| | tt<br>et |<br>VGE=18V<br>45 45<br>: ea 15V ~~ LEE tty<br>40 40<br>WWef Cr 12V | TyeWW fi<br>35 35<br>=)e | | 10V Ce/ Oe/ =) LaJ<br>ocS 30 fi 8V PpWyti ys 30 fe<br>P ——— oc<br>25 lili 7V py tte 25 Lite<br>6V<br>20 20<br>O O<br>4 | Brae = os<br>5V<br>15 15<br>| 4V Ye ~ LEE}<br>10 10 er<br>TWN) | | e/7L tt<br>5 5<br>2)eee eeee<br>0 | LA NA 0 E RPS Zee<br>0 1 2 3 4 5 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical output characteristic Figure 6. Typical ( _T_ vj=150°C) ( _V_ CE=20V)
**==> picture [471 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.00<br>IC=5A td(off)<br>IC=10A tf<br>IC=20A td(on)<br>tr<br>5 1.75 eS PRET<br>z A e<br>100<br>os ee ee =a<br>BESS<br>Bem 1.50 a ——<br>FE SSE SESe<br>6x fo | ft leg>= [tJPRES| | | | ft ee[ery<br>Poker 1.25<br>yt | | COP EERE eer<br><= oO<br>pe ts Ll<br>10<br>~ e ee peer<br>eT) § B e<br>1.00<br>im = a<br>2 Qo epee<br>e) | | | | | |) |”) 6S<br>a Pp {[/t {| | | | [| [| | fT ff<br>OQ ee<br>0.75<br>0.50 1<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45 50 55 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=32 Ω , Dynamic test Figure E)
9
~~High speed switching series fifth generation~~ IKP20N65H5
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**----- Start of picture text -----**<br>
1000<br>td(off)<br>—— tf Se | | | UT |<br>| a ee ee ee ee ee re ee ee<br>td(on)<br>I tr pop | |<br>| | } {| | tev 7] | | tf 100 td(off)<br>tf<br>PT t ee] | tt tt I td(on) J}<br>ea 1 a a<br>tr<br>e — 100 a cee ee ye— | a ee ee ee eee<br>no a no<br>i ee<br>= Es ee ee e e ee O = O<br>F aeeee ee ee<br>O pot | ee yg<br>cf |bere.<br>i> - —_ — i> 10 aa ss<br>10<br>A ee ee ee ee<br>SQ<br>1 1<br>10 20 30 40 50 60 70 80 90 100 110 120 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =10A,Dynamic test circuit in I C =10A, r G=32 ,Dynamic test circuit in<br>Figure E) Figure E)<br>6.0 3.0<br>typ. Eoff<br>5.5 min. Eon<br>max. Ets<br>Ww a<br>2.5<br>go 5.0 es |<br>e) (?p) ‘<br>a 4.5 oD<br>ee 2.0<br>4.0<br>2 ee<br>x 3.5 oo — a x 1.5 are<br>Lubk 3.0 ~~. = [NW a OoZ “’ , o<br>i: — roe =2 LLL’ a<br>1.0<br>ee eb<br>2.5<br>Lu _ = “ oe<br>2.0<br>0.5<br>1.5<br>ee eee<br>1.0 0.0<br>0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50 55 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.2mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=32 Ω ,Dynamic test Figure E)
10
IKP20N65H5
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**----- Start of picture text -----**<br>
0.8 0.50<br>Eoff Eoff<br>Eon 0.45 Eon<br>0.7 E Ets li} f Ets yi} }<br>. |, 0.40 C e.<br>a D een:<br>0.6<br>Ww Ww 0.35 -<br>7) - 7)<br>o le o<br>0.5<br>—! —! 0.30<br>é : gf ee<br>O = O ecooe<br>orBfLey oryb Leeet<br>nm 0.4 = Ww 0.25 ><br>Z uec Z —_<br>: |<br>0.20<br>0.3 pt ke PU |<br>= ac = aa<br>0.15<br>0.2<br>0.10<br>0.1<br>aan pL<br>0.05<br>0.0 0.00<br>10 20 30 40 50 60 70 80 90 100 110 120 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =10A, Dynamic test circuit in I C =10A, r G=32 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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0.50 16<br>Eoff 130V<br>0.45 Eon 520V<br>Ele Ets EE) eaJ 14 Eo yea<br>0.40<br>12<br>ipe 0.35 | e oah nT} (Z<br>ep)PoppeO aa prs?aa 7 <a 10 La)<br>0.30<br>a < 2c fe) /<br>G) aw - is<br>ee Ue<br>0.25 8<br>0.20<br>6<br>am an E<br>0.15<br>4<br>ae ee<br>0.10<br>2<br>0.05<br>oT ff |<br>0.00 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40 45 50<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=20A)
_T_ vj =150°C, _V_ GE=15/0V,
_I_ C =10A, _r_ G=32 Figure E)
11
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1E+4<br>Cies<br>t Coes ——— — 1<br>i Cres a ee es ee L<br>( t—§ _S ee S EEEPIE PEEHeSEeer<br>( eeee es =er aee| ee | | D=0.5 ||<br>1000 eeee ericomma 0.2<br>0.1<br>rs [ee] Il |<br>ee en "7 YTV TI era 0.05 iil<br>0.1<br>0.02<br>oOz a~¢ AeereeA ee |<br><x 100 Se ee ee ee = ICY eR 0.01<br>2 aSSS ==) HAya single pulse<br>Era a NTToom ASSCImDan| a Tan<br>aae6 Gn ce emer i MNTL aa<br>0.01<br>10 PNFpsf ag eTEeeLA Verttt,ELE ELI LDRm Ti<br>PTT TAA ll<br>pta | | || TO ei0 Aeo GHG i<br>a eel TE ZL IE ooo<br>> Cn | on i: 1 2 3 4<br>ri[K/W]: 0.2392053 0.410959 0.4430167 0.1066175<br>τ i[s]: 1.4E-4 1.2E-3 0.01493292 0.1213884<br>1 PF | | | ff | 0.001 0I| |TT<br>0 5 10 15 20 25 30 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>130<br>Tj=25°C, IF = 10A<br>Z “Tne 120 oe Tj=150°C, IF = 10A<br>=$ 1 Ee OcHl ATail ;<br>= EA 110<br>Wu Ae saert D=0.5 tt<br>9 A iT TT nD \<br>i? TNYZaa oeiil 0.2 TN)Ico 86. \\<br>w/, 100<br>0.1<br>0.05<br>90<br><== 0.1 EELlSANA 0.02 oSWIM a : : -<br>=w PeeYT TT eer TT aiTn 0.01 0 | e)O 80 ‘YO<br>ix aiSTeet eeTN eet single pulse Mill tHee 70<br>Lu<br>E De eer Ea 7 PREP TTT<br>60<br>VIM 0.01 AI MEE Ny & LING<br>= eePT TTT TTel ITFMt oy 50 i~~. d |<br>g. StetCI Hat YT ALLEL]<br>CN CTI cies comteiee fl SE<br>ACEay geI i: 1 CCU 2 corn 3 crc 4 l 40 Py] yt | EARLoN<br>ri[K/W]: 0.2955981 0.7867872 0.7353328 0.3659654<br>τ i[s]: 8.9E-5 6.5E-4 5.5E-3 0.05080561<br>esee | e<br>0.001 30<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 300 700 1100 1500 1900 2300 2700<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Diode transient thermal impedance as a Figure 20. Typical reverse recovery time as a function<br>function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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0.8 18<br>Tj=25°C, IF = 10A Tj=25°C, IF = 10A<br>Tj=150°C, IF = 10A Tj=150°C, IF = 10A<br>16<br>0.7<br>_ 14 = Z|<br>ef7 0.6 L E E)Ty) 2 ELLE er] EP<br>12<br>0.5<br>: s 10 Liat ber<br>pL eA<br>rs) 0.4 8 8 An<br>WwW 0.3 Ww<br>6<br>eforreils<br>0.2<br>4<br>; 0.1 EERE LEE ; ELLE EEE EEL<br>2<br>0.0 0<br>300 700 1100 1500 1900 2300 2700 300 700 1100 1500 1900 2300 2700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rrm<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22. Typical function ( _V_ R=400V)
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0<br>Tj=25°C, IF = 10A<br>-50 Tj=150°C, IF = 10A<br>-100<br>2= -150 f e<br>ELENA<br>-200<br>-250<br>x<br>£ \<br>®a -300 aN<br>PLN -350<br>LTT\<br>-400<br>EE EIN<br>BERRREEEEEAN<br>-450<br>-500<br>Pepper}<br>300 700 1100 1500 1900 2300 2700<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
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40<br>Tj=25°C<br>Tj=150°C<br>35<br>30<br>25<br>20<br>15 /<br>10<br>4<br>5<br>:<br>0<br>| Eee<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00<br>V F , FORWARD VOLTAGE [V]<br>**----- End of picture text -----**<br>
Figure 24.
( _V_ R=400V)
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2.00<br>1.75<br>IF=10A<br>IF=20A<br>IF=40A<br>- Fl |<br>xt gf }<br>Kk 1.50<br>OoI | |<br>><br>Qgo pup peep<br>m4<br>ef 1.25<br>1.a ee |<br>1.00<br>0.75<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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High�speed�switching�series�fifth�generation
## PG-TO220-3
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High�speed�switching�series�fifth�generation
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v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t d(off) t f t d(on) t r t<br>v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>2% I C t<br>v CE (t)<br>t 2 t 4<br>E off [=] t 1∫ V CE x I C x d t E on [=] t 3∫ V CE x I C x d t 2% V CE t<br>t 1 t 2 t 3 t 4<br>**----- End of picture text -----**<br>
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## High speed switching series fifth generation
## Revision History
## IKP20N65H5
Revision: 2014-06-11, Rev. 2.1
Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-06-11 Final data sheet
## We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
## Published by
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## Legal Disclaimer
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## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1, 2014-06-11
17
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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