Image not available
Illustrative purposes only
IKP20N65F5XKSA1
IGBT, 42 A, 1.6 V, 125 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5 Series
- Power Dissipation: 125W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 42A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.829 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
High speed 5 FAST IGBT in TRENCHSTOP _ TM 5 technology copacked with RAPID 1
## IKP20N65F5
IKP20N65F5
**==> picture [469 x 257] intentionally omitted <==**
**----- Start of picture text -----**<br>
High speed 5 FAST IGBT in TRENCHSTOP_ TM 5 technology copacked with<br>RAPID 1 fast and soft anti parallel diode<br>Features and Benefits: C<br>High speed F5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>«Low Q g E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C C<br>* Qualified according to JEDEC for target applications :<br>¢ Pb-free lead plating; ROHS compliant 4<br>*« Complete product spectrum and PSpice Models: © Safi, 7<br>http://www.infineon.com/igbt/ G. 7Oza_.%<br>Applications:<br>¢ Solar converters A A fr<br>¢ Uninterruptible power supplies Ls<br>* Welding converters G C “a<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKP20N65F5|650V|20A|1.6V|175°C|K20EF5|PG-TO220-3|
2
IKP20N65F5
**==> picture [146 x 65] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
Rev.�2.1,��2014-06-11
IKP20N65F5
High�speed�switching�series�fifth�generation
**==> picture [146 x 65] intentionally omitted <==**
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||42.0<br>21.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||60.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||20.0<br>10.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||125.0<br>63.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||1.20|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.20|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|
Rev.�2.1,��2014-06-11
4
IKP20N65F5
**==> picture [146 x 65] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=10.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.20mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|24.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1200|-|pF|
|Output capacitance|_C_oes||-|30|-||
|Reverse transfer capacitance|_C_res||-|5|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=20.0A,<br>_V_GE=15V|-|48.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=32.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|165|-|ns|
|Fall time|_t_f||-|17|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.22|-|mJ|
Rev.�2.1,��2014-06-11
5
IKP20N65F5
**==> picture [146 x 65] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=32.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|170|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.04|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1300A/µs|-|53|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.28|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-235|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=1000A/µs|-|25|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.12|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|8.1|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-630|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=32.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|200|-|ns|
|Fall time|_t_f||-|11|-|ns|
|Turn-on energy|_E_on||-|0.26|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.37|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=32.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|230|-|ns|
|Fall time|_t_f||-|43|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|
6
Rev.�2.1,��2014-06-11
IKP20N65F5
**==> picture [146 x 65] intentionally omitted <==**
High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1000A/µs|-|87|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.63|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.1|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-186|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|45|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.29|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-440|-|A/µs|
Rev.�2.1,��2014-06-11
7
IKP20N65F5
**==> picture [474 x 659] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 130<br>Se 120 CT<br>110<br>AHH) = GAP<br>CCIE 100 EE<br>< CTL PK Pp<br>90<br>10<br>e =<br>UT LUM 80 }—A}——<br>DC<br>70<br>60<br>5 c et ef TNT<br>50<br>| 1 TAMIA) & };- ¢ 44+] [AIH]<br>40<br>9 SSS Sey oe Po} | EN<br>30<br>FE 20 Ff [| | [TN 4<br>0 10 ee ee<br>0.1 LAIN ELEN LHP = TEN 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>45 60<br>55<br>40<br>NOT ELL) Fee<br>50<br>35 PNET): FARR VGE=18V A<br>: 45<br>15V<br>EP 30 . 40 | tA AC<br> KE ea 12V<br>35<br>ae 25 ee 10V Pee<br>30 8V<br>pT NC §s eip<br>20<br>25 7V<br>; : | 2 Aes<br>6V<br>15 20<br>ef 8 pee<br>5V<br>15<br>BNC 10 Ee<br>10<br>PAY EEJReEE EEE<br>5<br>5<br>PN SEESNeSS<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
8
~~High speed switching series fifth generation~~ IKP20N65F5
**==> picture [472 x 302] intentionally omitted <==**
**----- Start of picture text -----**<br>
60 60<br>Tj=25°C<br>55 PL EL LAL | 55 Fe Tj=150°C<br>50 50<br>ite VGE=18V taeAT, Ty fea a<br>45 45<br>: ea 15V ~~ EEE ta<br>40 40<br>WWEe |eH 12V UT | tit ttt tA<br>Pe 35 | WW 35<br>10V<br>S |Ta Le LP<br>or 30 tip 8V Wy—ws f ti orys 30 fg<br>ee© 25 ee 7 7V —| 6 25 eee<br>: 6V WAT Ly) 2 te<br>20 20<br>5V<br>St O<br>15 15<br>4V Ye ~ {Et}<br>10 10<br>PAN | FATT<br>5 5<br>PRT a<br>0 0<br>| AR E REZAaREEEE<br>0 1 2 3 4 5 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br>
**==> picture [471 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.00<br>IC=5A<br>IC=10A<br>IC=20A<br>1.75<br>zae e e 100 A =n LE _<br>td(off)<br>2 f ee0 JE 1 tf S SSSs<br>td(on)<br>ples,E 1.50 a | E tr aekAi<br>a Pe c d<br>Boles) —€ e ee<br>re 1.25 ese cae<br>O a a i 10 a<br>1.00<br>a —————————<br>CT]? ESSE<br>5 Pp ty} | ft ft ft tT ft ft fT<br>2<br>0.75<br>FERRER) PCT<br>0.50 1<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45 50 55 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=32 Ω , Dynamic test Figure E)
9
~~High speed switching series fifth generation~~ IKP20N65F5
**==> picture [474 x 331] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>td(off)<br>——| tf SS ee ee ee ee ee ee P| Ee| ET<br>td(on)<br>I tr pj | | |<br>| P| | ce TT 100 td(off)<br>tf<br>PTL T+T t} | | | |ft | td(on) J}<br>I tr a ee ee ee eee<br>100<br>no a no<br>i ee<br>= a ee ee ee eeeeee ee O = O<br>F a ee ee ee ee<br>a eeee —<br>i cet — Ae? i 10 a a a<br>= - _— o — a ss<br>10<br>ce A ee ee ee ee<br>a<br>1 1<br>10 20 30 40 50 60 70 80 90 100 110 120 25 50 75 100 125 150 175<br>r G ,GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =10A,Dynamic test circuit in I C =10A, r G=32 ,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
**==> picture [471 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
6 3.0<br>typ. Eoff<br>min. Eon<br>max. Ets<br>Ww a a<br>5 2.5<br>S Ww<br>aa 4 |_-——~-eeea 2.0<br>1 e)<br>uw ye O oO<br>xee 3 eeaeeoS = x 1.5 . 7<br>- ~e Z “ ’<br>-E _—— . = a a “<br>= 2 ar O 1.0 7 7<br>uw “ a<br>1 0.5<br>0 Pp of | ct | | 0.0 éAT<br>0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50 55 60<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.2mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=32 Ω ,Dynamic test Figure E)
10
IKP20N65F5
**==> picture [474 x 622] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.8 0.40<br>Eoff Eoff<br>Eon Eon<br>0.7 i Ets f 0.35 a Ets e<br>e it de E e<br>0.6 0.30<br>Ww Ww ae<br>o o -<br>e) 0.5 e) 0.25<br>pa] pa] 7<br>j) G) vet cer<br>ow Le wv 7<br>WW 0.4 = = Ww 0.20 =<br>Z ' oc Z oc<br>Ww ue - Ww where<br>Zz 0.3 4c Zz 0.15<br>O a O<br>EaE<br>= 0.2 a = 0.10 _—-<br>eee ee<br>0.1 0.05<br>0.0 0.00<br>10 20 30 40 50 60 70 80 90 100 110 120 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =10A, Dynamic test circuit in I C =10A, r G=32 ,Dynamic test circuit in<br>Figure E) Figure E)<br>0.50 16<br>Eoff 130V<br>0.45 Eon 520V<br>E Ets EE) 14<br>0.40<br>mr | Boy<br>oy | | ft to V4<br>12<br>p o ets ,’<br>0.35<br>op) P e<br>2OaPoop7 JogWuae_I 10 LaLZ. /<br>Bex 0.300.25 a a > < nmOoae 8 LeVA ’<br>0.20<br>6<br>O 27 <x<br>E 0.15 a = oO<br>4<br>(ep) -<br>abe Fa<br>0.10<br>2<br>0.05 ee ee<br>0.00 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40 45 50<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=20A)
_T_ vj =150°C, _V_ GE=15/0V,
_I_ C =10A, _r_ G=32 Figure E)
11
~~High speed switching series fifth generation~~ IKP20N65F5
**==> picture [482 x 623] intentionally omitted <==**
**----- Start of picture text -----**<br>
1E+4<br>Cies<br>t Coes ——— — 1<br>i Cres a ee es ee L<br>( t—§ _S ee S EEEPIE PEEHeSEeer<br>(es es e e es = aee| ee | | D=0.5 ||<br>1000<br>— Se—— a eeericomma 0.20.1 IlA |<br>e e 0.05<br>0.1<br>0.02<br>QOz ee aA See Seeeeer cri eaeet RM eet<br><x 100 (ee ee ~¢= eerICY eRA ee 0.01 |<br>etya single pulse<br>A a ial<br>a a ori aril | Lan<br>S Le ee FT aa Was<br>a op)ee 0.01 CCMTULA | el | LL<br>10<br>a PTT TAA ll<br>eea ees ae ee a [elt STTT cahim: Co=tiRe _ ll<br>aan a e<br>J TE Z L i: 1 IE 2 ooo 3 4<br>ri[K/W]: 0.2392053 0.410959 0.4430167 0.1066175<br>τ i[s]: 1.4E-4 1.2E-3 0.01493292 0.1213884<br>1 PF | | | ff | 0.001 0I| |TT<br>0 5 10 15 20 25 30 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>130<br>Tj=25°C, IF = 10A<br>Z “Tne 120 oe Tj=150°C, IF = 10A<br>=2 1 p= = eeHl SefATailHEH 1 ,<br>oP HHS eerAHH 110<br>Wu A D=0.5 iT TT nD \<br>2 Yl ook \<br>0.2<br>& PT PA ee 1 100 \<br>0.1<br>0.05<br>90<br>== 0.1 SLl N A 0.02 WIM a : .<br>=w PeeYT TT eer TT aiTn 0.01 0 | OoO 80 _— =<br>iE= reeDeeeceaeer a Ea single pulse | tuee7 70 N ~4<br>SCA) & 60 | NOE<br>2 0.01 A Ri Ro ae rf - a =<br>= PTee TTT TTel ITFMt oy 50 ><br><. CCSer eg a PLY TPN EE EL |<br>oC I] sAre, cate Il a<br>Sl i: 1 a 2 3 4 | 40 _<br>Ot ri[K/W]: 0.2955981 on 0.7867872 o 0.7353328 0.3659654 PTY yt ty |PN<br>τ i[s]: 8.9E-5 6.5E-4 5.5E-3 0.05080561<br>0.001 es | 30 PETE EEL LL LLL<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 300 700 1100 1500 1900 2300 2700<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/s]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20. Typical of diode ( _V_ R=400V)
12
IKP20N65F5
**==> picture [476 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.8 18<br>Tj=25°C, IF = 10A Tj=25°C, IF = 10A<br>Tj=150°C, IF = 10A Tj=150°C, IF = 10A<br>16<br>0.7<br>— 14 - ZA)<br>2s 0.6 [ L LL| TP) 2 ELLE Lert Ee<br>12<br>es c an<br>0.5<br>10<br>: e irl ee<br>pti>8 0.4 ty &§>8 , eee|<br>8<br>WwW 0.3 Ww<br>—EE EE —<br>6<br>efor |s<br>0.2<br>4<br>; 0.1 EERE LEE ; ELLE EEE EEL<br>2<br>0.0 0<br>300 700 1100 1500 1900 2300 2700 300 700 1100 1500 1900 2300 2700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rrm<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22.
( _V_ R=400V)
**==> picture [248 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
0<br>Tj=25°C, IF = 10A<br>-50 Tj=150°C, IF = 10A<br>-100<br>2= -150 f e<br>ELENA ET<br>-200<br>io = a<br>BLE -250 PT NGeAE\ ~ O<br>2 Ly 3<br>2 IN ra<br>N <<br>-300<br>ee -350 RENEE:<br>TTL\<br>-400<br>EE EN<br>BERRREEEEEAN<br>-450<br>Pepe)<br>-500<br>300 700 1100 1500 1900 2300 2700<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
**==> picture [234 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
40<br>Tj=25°C<br>Tj=150°C<br>35<br>30<br><=<br>a 25<br>O 7<br>20<br>3<br>ra<br><<br>15 /<br>10<br>4<br>5<br>:<br>Le<br>0<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00<br>V F , FORWARD VOLTAGE [V]<br>I F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
13
IKP20N65F5
**==> picture [233 x 276] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.00<br>1.75<br>IF=10A<br>IF=20A<br>IF=40A<br>- Fl |<br>xt gf }<br>Kk 1.50<br>OoI | |<br>><br>Qgo pup peep<br>m4<br>ef 1.25<br>1.a ee |<br>1.00<br>0.75<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
14
IKP20N65F5
**==> picture [146 x 65] intentionally omitted <==**
High�speed�switching�series�fifth�generation
## PG-TO220-3
15
Rev.�2.1,��2014-06-11
IKP20N65F5
High�speed�switching�series�fifth�generation
**==> picture [146 x 65] intentionally omitted <==**
**==> picture [214 x 477] intentionally omitted <==**
**----- Start of picture text -----**<br>
v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t d(off) t f t d(on) t r t<br>v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>2% I C t<br>v CE (t)<br>t 2 t 4<br>E off [=] t 1∫ V CE x I C x d t E on [=] t 3∫ V CE x I C x d t 2% V CE t<br>t 1 t 2 t 3 t 4<br>**----- End of picture text -----**<br>
**==> picture [145 x 173] intentionally omitted <==**
**----- Start of picture text -----**<br>
a b<br>a b<br>t<br>**----- End of picture text -----**<br>
**==> picture [142 x 89] intentionally omitted <==**
**==> picture [118 x 150] intentionally omitted <==**
**==> picture [9 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
16
Rev.�2.1,��2014-06-11
IKP20N65F5
**==> picture [146 x 65] intentionally omitted <==**
## High speed switching series fifth generation
## Revision History
IKP20N65F5
Revision: 2014-06-11, Rev. 2.1
Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-06-11 Final data sheet
## We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
## Published by
Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved.
## Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.1, 2014-06-11
17
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →