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IKP15N65H5XKSA1
IGBT, 15 A, 1.65 V, 105 W, 650 V, TO-220, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:105W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins;
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 105W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 15A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.705 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT High speed 5 IGBT in TRENCHSTOP _ TM technology copacked with RAPID 1 IKP15N65H5 IKP15N65H5 **==> picture [472 x 291] intentionally omitted <==** **----- Start of picture text -----**<br> High speed 5 IGBT in TRENCHSTOP TM _ technology copacked with RAPID 1<br>fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>«Low Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>C<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications ‘<br>¢ Pb-free lead plating; ROHS compliant<br>« Complete product spectrum and PSpice Models: bof<br>http://www.infineon.com/igbt/<br><<ihp<br>Applications:<br>* Solar converters is £<br>* Uninterruptible power supplies fs ff<br>* Welding converters A ad<br>* Mid to high range switching frequency converters £ 4 yf<br>G<br>C<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKP15N65H5|650V|15A|1.65V|175°C|K15EH5|PG-TO220-3| 2 IKP15N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.�2.1,��2015-05-05 IKP15N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emitter voltage|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||30.0<br>18.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A| |Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||45.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||20.0<br>12.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A| |Gate-emitter voltage|_V_GE||±20|V| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||105.0<br>52.5|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||1.40|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.90|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W| Rev.�2.1,��2015-05-05 4 IKP15N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|22.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|930|-|pF| |Output capacitance|_C_oes||-|24|-|| |Reverse transfer capacitance|_C_res||-|4|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=15.0A,<br>_V_GE=15V|-|38.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns| |Rise time|_t_r||-|7|-|ns| |Turn-off delaytime|_t_d(off)||-|160|-|ns| |Fall time|_t_f||-|10|-|ns| |Turn-on energy|_E_on||-|0.12|-|mJ| |Turn-off energy|_E_off||-|0.05|-|mJ| |Total switchingenergy|_E_ts||-|0.17|-|mJ| Rev.�2.1,��2015-05-05 5 IKP15N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns| |---|---|---|---|---|---|---| |Rise time|_t_r||-|3|-|ns| |Turn-off delaytime|_t_d(off)||-|138|-|ns| |Fall time|_t_f||-|20|-|ns| |Turn-on energy|_E_on||-|0.04|-|mJ| |Turn-off energy|_E_off||-|0.02|-|mJ| |Total switchingenergy|_E_ts||-|0.06|-|mJ| |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=1000A/µs|-|48|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.20|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|8.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-200|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=1000A/µs|-|25|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.09|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|6.7|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-500|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns| |Rise time|_t_r||-|8|-|ns| |Turn-off delaytime|_t_d(off)||-|180|-|ns| |Fall time|_t_f||-|16|-|ns| |Turn-on energy|_E_on||-|0.18|-|mJ| |Turn-off energy|_E_off||-|0.08|-|mJ| |Total switchingenergy|_E_ts||-|0.26|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|14|-|ns| |Rise time|_t_r||-|4|-|ns| |Turn-off delaytime|_t_d(off)||-|220|-|ns| |Fall time|_t_f||-|30|-|ns| |Turn-on energy|_E_on||-|0.06|-|mJ| |Turn-off energy|_E_off||-|0.03|-|mJ| |Total switchingenergy|_E_ts||-|0.09|-|mJ| 6 Rev.�2.1,��2015-05-05 IKP15N65H5 **==> picture [146 x 65] intentionally omitted <==** ## High�speed�switching�series�fifth�generation **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=1000A/µs|-|74|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|0.42|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|11.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-160|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=1000A/µs|-|42|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.21|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|10.5|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-310|-|A/µs| Rev.�2.1,��2015-05-05 7 IKP15N65H5 High speed switching series fifth generation **==> picture [474 x 659] intentionally omitted <==** **----- Start of picture text -----**<br> 110<br>} ee || ee etteeett II 100 RK fff<br>Pt PALIN NT tT \<br>90<br>- PNR Nee<br>10 L/INT). 80 EAE TT<br>awd TeER ieNOAASee eel O= 70<br>tp=1µs<br>or | | CU INT AN SNS < 60 Nee eee<br>o PP 10µs re NSCS 77<br>50<br>50µs<br>sf TRAN 8 P| PN |<br>pL 1 DTN 100µs ee& 40<br>200µs<br>30<br>500µs<br>20<br>Se DC iLTIN<br>10<br>CoAT EEE<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>30.0 45<br>27.5<br>40<br>NY ve<br>25.0<br>SS) 35 ae VGE=20V<br>22.5<br>18V<br>ef 20.0 TNT 30 SY<br>12V<br>im UNE pte<br>17.5<br>ef ooNgim 25 10V Ssal/ |<br>15.0 8V<br>20<br>12.5 7V<br>2 ee: ly<br>6V<br>10.0 15<br>O O<br>5V<br>7.5<br>P NN SRWNInnn<br>10<br>4V<br>5.0<br>5<br>2.5<br>Try :Se<br>py) LK OO<br>0.0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br> 8 IKP15N65H5 High speed switching series fifth generation **==> picture [472 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 45 45<br>Tj=25°C<br>40 / 40 | Tj=150°C<br>PP; yA) EE<br>35 VGE=20V = ee 35 e<br>z 18V — Yi\ =<br>: 30 on aa 30<br>12V<br>a Se ae q<br>em 25 10V fyLY em 25<br>oO oO<br>8V<br>fe) 20 HY as 20 |<br>7V<br>2 ee ey, «a fe)<br>6V<br>: 15 MW 2 15<br>SE 5V Mivi/zaa : /<br>10 NOK— TK 10 /<br>4V<br>y,<br>5 5<br>PSK TT OL<br>PFSa Le——|__—<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br> Figure 5. Typical ( _T_ vj=150°C) Figure 6. Typical ( _V_ CE=20V) **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 2.25 1000<br>IICC=3,8A=7,5A i1| ttd(off)f eeeSa eeee<br>2) IC=15A td(on) es ee<br>2.00 tr<br>Ss e l ee eS<br>Pe ——— — | a eeeee<br>po |te E E<br>sere LL<br>1.75 100<br>phe<br>[a = ao |) uw=se aa = eea a<br>Re<br>ET ee ee eee<br>1.50<br>E ss] PNET<br>ee eee<br>S as) 1.25 es ep)pee 10 ee eee eee<br>aa5 >; [| [| J; Jf apeee<br>i<br>i<br>1.00<br>aOe<br>0.75 1<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical a function ( _V_ GE=15V) Figure 8. (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=39 Ω , Dynamic test Figure E) 9 IKP15N65H5 **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a SS ES ES eS 1000 a a<br>1 t td(off) a he t td(off) a<br>| tf tf<br>td(on) td(on)<br>tr tr<br>| =ee a ee[a aeeeee ee eeee | = |ee eeaee A eeee ee ee e eeeeee<br>aw e e<br>— 100 a a a es se — 100 a ss<br>no a re ee es ee no a es<br>uw= poee ee eee Ge)= esa e e e eeee ee<br>F a ee ee a eeee<br>O a a ee a ee<br>a<br>= aan _ =<br>ep) B s 10 aa eppecc sePe | ep)§- 10 aa(oreeees steocees re Serre=se=ee<br>e a eee Pwa =~ weeea<br>p o a ee<br>a ee ee ee a ee<br>a a<br>ed ee<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br> ## Figure 9. Typical **resistor** _V_ GE =15/0V, Figure E) **==> picture [103 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> T vj =150°C, V CE=400V,<br>I C<br>**----- End of picture text -----**<br> Figure 10. (inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =7,5A, _r_ G=39 ,Dynamic test circuit in Figure E) **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 5.5 1.6<br>typ. Eoff<br>min. Eon<br>5.0 max. 1.4 Ets<br>4.5<br>F 7<br>1.2<br>ee yA &<br>a 4.0 e e /<br>i h~ | oNS aN a /<br>1.0<br>3.5 .<br>uwSP KLRd anne<br>x ~N q T \ Ox 0.8 f<br>a 3.0 SN > ~~ Zz /<br>ke ™~ z 0.6 WA<br>iad NN uw 7 7<br>= N r 7<br>= 2.5 = S 5 “oly<br>wi q ~ \I Oo= 0.4 ZZ/ A<br>2.0<br>q ie) / 7 ea<br>\ 0.2 zZ“ee |—<br>1.5 EA<br>1.0 0.0<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Figure 12. ( _I_ C=0.15mA) (inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=39 Ω ,Dynamic test Figure E) 10 IKP15N65H5 **==> picture [480 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 0.35 0.300<br>Eoff Eoff<br>Eon 0.275 Eon<br>Ets Ets<br>0.30<br>| 0.250<br>> eT<br>a 0.225 Pf ff “7<br>Lu 0.25 oa Lu “7<br>7p)o -ca 9)o 0.200 => ao<br>pan a - pan 7<br>> 0.20 a =< > 0.175 = =<br>WwZa -— Ww 0.150 — _<br>0.15 0.125<br>L<br>S) 7 S)L 0.100<br>0.10<br>= 0.075<br>°<br>ja] 0.050 |<br>0.05<br>0.025<br>0.00 0.000<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =7,5A, Dynamic test circuit in I C =7,5A, r G=39 ,Dynamic test circuit in<br>Figure E) Figure E)<br>0.300 16<br>Eoff 130V<br>0.275 Eon 520V<br>Ets 14<br>0.250<br>Z ee ee ee 7<br>= | J /<br>0.225 12<br>(0n “ - imS / /<br>0.200<br>Gof “ Q 10 /<br>ee<br>>= 0.175 7 “ a | 5> /As<br>x 0.150 “oO L=- <a Ww 8 Z<br>lu oe Za =<br>0.125<br>6<br>0.100<br>= AO E /<br>0.075 4<br>3 ee<br>ee<br>0.050<br>2<br>0.025<br>aT tT | |<br>0.000 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br> Figure 15. Figure 16. Typical ( _I_ C=15A) **==> picture [91 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br> _I_ C =7,5A, _r_ G=39 Figure E) 11 IKP15N65H5 High speed switching series fifth generation **==> picture [482 x 620] intentionally omitted <==** **----- Start of picture text -----**<br> o Ciss o BNA<br>Coss — HW<br>Crss a ea Tl<br>Sa (Te<br>1000<br>1 ty SN eT A<br>ee== [T] =alll D=0.5 Mil<br>po 8 Ss 0.2 ae<br>0.1<br>ee a co Al Haat<br>rotee |enAaie 0.05 ia<br>a 2 100 \aees a | 0.02<br>E oS WE wig pp 0.01<br>single pulse<br>gz fs a Pewieani Baynea! gi!<br>a. ee ee ee ee 0.1 rr LA Lert Lee Li<br>6 foo | |pas] § eee<br>~ 10 Ww‘ Zzuw YTAAAVA tt eT ATT TT<br>2 O r<br>————————— TT A i<br>aesJ __—____________es esenees fOS Bill040TM U 11001 a0 T LMM 0LINE010ge TTT<br>i: 1 2 3 4<br>ri[K/W]: 0.3389743 0.8017237 0.7055106 0.3537915<br>τ i[s]: 2.2E-5 3.2E-4 3.0E-3 0.02235159<br>1 e eeeee 0.01 | I mM TT TT TT T<br>0 5 10 15 20 25 30 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>90<br>Tj=25°C, IF = 7.5A<br>0 [= Tj=150°C, IF = 7.5A 7]<br>. feed =f<br>SCs 1 UU UI 80 [Sr] |<br>9 Hit D=0.5<br>x tt. 0.2 | 2 ~<br>£ PT TeAAT 0.1 Ww 70 ~N<br>TCAs<br>2 Ec 0.05 TC ey [OP<br>: ETM |} et<br>0.1 0.02<br>a9ft 0 0.01 MMI i 60 rT=<br>uwz= |eemi A | single pulse ntTT111 re7deee PNN Tf ft<br>b SO Eee eT! Y 50 PF TN] ff<br>a 0.01 0 A | So<br>2 a | Ry Ro cn) WW ——™~<br>< erent emt eat eee! -- = ae<br>FAH7HHH i eee eee<br>40<br>2 IL, vers Co=te/Re Ill |<br>i: 1 2 3 4 ry]<br>ri[K/W]: 0.4457406 0.911159 0.9864113 0.5566891<br>| τ i[s]: 1.9E-5 2.4E-4 2.3E-3 0.02112308 Pf do<br>0.001 le | 30 Pot | | tt<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 600 800 1000 1200 1400 1600 1800 2000<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br> Figure 19. Diode function ( _D_ = _t_ p/T) Figure 20. ( _V_ R=400V) 12 IKP15N65H5 **==> picture [476 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 0.50 17.5<br>Tj=25°C, IF = 7.5A Tj=25°C, IF = 7.5A<br>0.45 a Tj=150°C, IF = 7.5A e Tj=150°C, IF = 7.5A e<br>e e |<br>ee 0.40 ee a 15.0<br>Ww Kk<br>BP e e<br>& 0.35 & 7<br>eeO>ee> 0.300.25 oO>> 12.5 eeeeea Z |<br>WwW<br>aef 0.20 |Td| SE——— Ww 10.0 Zz oa<br>eee eee<br>0.15<br>itiy or7p) LO a<br>a ffa Zo4<br>0.10 7.5<br>ERR Cees<br>0.05<br>0.00 5.0<br>600 800 1000 1200 1400 1600 1800 2000 600 800 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 27<br>Tj=25°C, IF = 7.5A Tj=25°C<br>Tj=150°C, IF = 7.5A Tj=150°C<br>24<br>-50 a ee ee ee ee<br>a<br>21<br>-100<br>~=<<br>18<br>= -150 WW<br>e£ a ~ ow<br>15<br>ef oN |S |<br>© -200 ™~N<br>12<br>™~<br>(0) -250<br>9<br>ne} .<br>-300<br>Bf LNB pa<br>6<br>-350<br>ee 3<br>-400 0<br>600 800 1000 1200 1400 1600 1800 2000 0.0 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 23. Figure 24. ( _V_ R=400V) 13 IKP15N65H5 **==> picture [233 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>IF=4,5A<br>IF=9A<br>IF=18A<br>p e<br>1.8 e<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>aeQ 1.4 eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br> Figure 25. 14 IKP15N65H5 High�speed�switching�series�fifth�generation **==> picture [146 x 65] intentionally omitted <==** ## **Package Drawing PG-TO220-3** 15 Rev.�2.1,��2015-05-05 IKP15N65H5 High�speed�switching�series�fifth�generation **==> picture [146 x 65] intentionally omitted <==** ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 16 Rev.�2.1,��2015-05-05 IKP15N65H5 ## IKP15N65H5 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |1.1|2012-11-09|Preliminarydata sheet| |1.2|2013-12-18|New MarkingPattern| |2.1|2015-05-05|Final data sheet| ## **Information** ## **Warnings** endangered. 17
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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