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IKP08N65H5XKSA1
IGBT, 8 A, 1.65 V, 70 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:650V; Transistor Ca; Available until stocks are exhausted
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 70W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 8A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.756 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## IGBT
High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1
## IKP08N65H5
IKP08N65H5
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High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1<br>fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>«Low Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>C<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications ‘<br>¢ Pb-free lead plating; ROHS compliant<br>« Complete product spectrum and PSpice Models: ‘of y<br>http://www.infineon.com/igbt/ C7,ay [Cap]<br>22293<br>Applications:<br>* Solar converters is £<br>* Uninterruptible power supplies fs ff<br>* Welding converters A ad<br>* Mid to high range switching frequency converters £ 4 yf<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKP08N65H5|650V|8A|1.65V|175°C|K08EEH5|PG-TO220-3|
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||18.0<br>11.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||24.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||24.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||20.0<br>12.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||24.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||70.0<br>35.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||2.20|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.90|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=8.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.08mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=8.0A|-|17.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|500|-|pF|
|Output capacitance|_C_oes||-|16|-||
|Reverse transfer capacitance|_C_res||-|3|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=8.0A,<br>_V_GE=15V|-|22.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|11|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|115|-|ns|
|Fall time|_t_f||-|15|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.10|-|mJ|
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|10|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|125|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.04|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|40|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.13|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-220|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|24|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.09|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-380|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|10|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|16|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.16|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|10|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|164|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.06|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|
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## High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|55|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.28|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-145|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|42|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.20|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|8.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-220|-|A/µs|
Rev.�2.1,��2015-05-05
7
IKP08N65H5 High speed switching series fifth generation
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80<br>a ee ||<br>Att KA OH<br>70<br>10 UNIS<br>= Seeee amee as ean oatCN ieee IITatl 60<br>x a eee eee| = N<br>E pf NAA et NT =<br>ra ee Ae lll 5 50<br>2 || tp=1µs ea E XI<br>aS MeN 10µs IMT § 40 TT KLEE<br>50µs<br>BATSs 1 eeTH LMUASAIN' NI)II xow \\<br>30<br>3 RR 100µs ee<br>OQ Se<br>oO TOEPTT 200µs TT eoSSSNT NTTTTT o- 20 Pt | JN\ |<br>PTS \<br>500µs<br>a DC ac | \<br>PTI PETIA PN 10<br>0.1 0<br>1 TTT 10 100 1000 = 25 LN 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
18 24<br>16 21 VGE=20V<br>18V<br>14<br>18<br>12V<br>x Y [ /<br>ei 12 < 10V —<br>ii oN\ dEa 15 ——yy[] |<br>8V<br>10<br>=) ‘ BL IN 7V<br>12<br>8 6V<br>O<br>BNC =) PRE<br>Ofo NSYo 9 LN 5V SI<br>6<br>: : \\ UY<br>© \ © \<br>6<br>4 \ ie<br>)<br>OK<br>2 3 Win \<br>PPT<br>0 0<br>25 50 75 100 ET 125 150 Y 175 Y 0.0 L 0.5 L ARNT 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
8
High speed switching series fifth generation IKP08N65H5
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**----- Start of picture text -----**<br>
24 24<br>Tj=25°C<br>Tj=150°C<br>21 VGE=20V 21<br>18V<br>18 18<br>z 12V 7TY).: x L g<br>x 4 x<br>10V<br>in 15 ——Sff / Z| it 15 o|<br>8V<br>8 Ct | 7 | & i<br>12 7V TL | 8 12<br>6V<br>nyi 9 5V STKeeei 9<br>© NX ©<br>6 6<br>/<br>foot Liev<br>3 3<br>; |<br>0 eee ee ee ee 0 _-<br>| AN |<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=150°C)
Figure 6. Typical ( _V_ CE=20V)
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**----- Start of picture text -----**<br>
2.25<br>IC=2A<br>IC=4A<br>IC=8A<br>e l& Ioppe<br>2.00<br>Zz Leo) 100 P a ee ee ee<br>S e IR td(off) SSS SSS<br>Ee as 1 tf a<br>5 Le D I td(on) a ee ee ee<br>1.75 tr<br>ee ee = =<br>E — = ee ee ee ee ee ee<br>SB foe |<br>Br F E<br>1.50<br>uWnea aa ee a eeTete 7 ee<br>10<br>ra nd re a ee<br>FE 1.25 = a<br>Wy - po<br>A a ae ee ee ee ee<br>1.00<br>ee a Ft | | | tt<br>0.75 1<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
_T_ vj =150°C, _V_ CE=400V,
_V_ GE =15/0V, _r_ G=48 Ω Figure E)
9
## ~~High speed switching series fifth generation~~ IKP08N65H5
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**----- Start of picture text -----**<br>
td(off)<br>tf<br>td(on)<br>tr<br>100 pEL aeoe 100 |_Io| }_O<br>aes aee ee ee ee ee ee ee |1 ttd(off)f aa aee ee ee<br>oy a ee ee eee | td(on) a ee ee ee eee<br>tr<br>= e a eeyee = I aee ee ee ee<br>i | of | UT i Da ee ee<br>es9 ||]| | Py 2 Ef<br>Zz —t—4——|--_- ZzOo<br>i 10 er i 10 a es<br>>= a ee se ee ee ee eee > a s s ee<br>2) p eoeoe OS2) a eeea a Serer cee<br>- e a e cae ee ee - eeea<br>a ee ee a eeee<br>ee ee ee ee ee ee ee ee<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>
## Figure 9. Typical **resistor**
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _I_ C =4A,Dynamic test circuit Figure E)
Figure 10.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =4A, _r_ G=48 ,Dynamic test circuit in E)
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**----- Start of picture text -----**<br>
5.5 0.8<br>typ. Eoff<br>min. Eon<br>Lu 5.0 yA max. 0.7 Ets /1\<br>g Sy J<br>F 4.5 SA & “<br>0.6<br>Qa 4.0 ~~ J ~sA 2 / L<br>i SA,<br>0.5<br>ae<br>3.5<br>SP KL [Rd]<br>~ q aN x 0.4 / Z<br>ke ~ N > \ z /<br>ag 3.0 NX N Ww Y4 7<br>E “~N Zz 0.3 7<br>= 2.5 ~~ N = 7 7<br>0.2<br>2.0<br>x: SOa LLLoY ss<br>0.1<br>1.5 \ eT |<br>Lr<br>1.0 PPP [EE] 0.0 / LE 7 LLaa<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12.
( _I_ C=0.08mA)
_T_ vj =150°C, _V_ CE=400V,
_V_ GE =15/0V, _r_ G=48 Ω Figure E)
10
IKP08N65H5
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**----- Start of picture text -----**<br>
0.200 0.200<br>Eoff Eoff<br>Eon Eon<br>0.175 Ets 0.175 Ets<br>= ete = a<br>0.150 0.150<br>Lu ao Lu wea<br>7) - 7) oe<br>o a o -<br>e) 0.125 < e) 0.125 <<br>| _ | Uo<br>or - or ev -<br>Ww 0.100 Ww 0.100 = =<br>a — — Ww - _ —_—<br>Oo oo Oo = a<br>Zz 0.075 Zz 0.075 =<br>OO<br>EE<br>0.050 0.050<br>0.025 0.025<br>0.000 0.000<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses asa Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =4A, Dynamic test circuit in I C =4A, r G=48 ,Dynamic test circuit in Figure<br>Figure E) E)<br>0.200 16<br>“<br>130V<br>7 520V<br>0.175 F 14 a |<br>ws 4v7 J<br>0.150 Eoff 12<br>Eon<br>Yn a“ Wu /<br>Ets<br>n “ a ke /<br>O 0.125 Zz 0 10 L<br>> “ 4 S /<br>ow: “- a “ im: Lf<br>Ww 0.100 i 8<br>2 “ 2 =<br>Ww 7 - ge<br>Zz=x 0.075 _ uyE 6 / a<br>= 0.050 L ————s* . 4 |<br>ne 0.025 2 ee<br>0.000 0<br>200 250 300 350 400 450 500 0.0 5.0 10.0 15.0 20.0 25.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=8A)
_T_ vj =150°C, _V_ GE=15/0V,
_I_ C =4A, _r_ G=48 E)
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**----- Start of picture text -----**<br>
1000 a a a<br>Ciss<br>C os s<br>(— Crss of TTT<br>Le Ee 1 r H<br>a imoO ems|| el D=0.5 tet|Hil<br>Zz YT TTT Teena TTT Lr<br>x I er 0.2 Cn|<br>- 100 (eeee naaeVy 4 enema 0.1<br>So | oe aatiil<br>0.05<br>re N47 20th ci 0.02<br>2 a Dv Bef, pa i<br>Sa Ree ESEll 0.01<br>eS (ns Ya<br>single pulse<br>a [PS &§ 0.1 obeee |<br>O = YA | | |<br>an z=> Se| Re TTol TT<br>10<br>nT ZERATUL CECE LC<br>1 9 a ee ee eel<br>JS Z WAFANA | *_ {ll<br>pS PATIELM TIM Ie Se |<br>a FN Aae<br>i: 1 2 3 4<br>ri[K/W]: 0.3389743 0.8017237 0.7055106 0.3537915<br>τ i[s]: 2.2E-5 3.2E-4 3.0E-3 0.02235159<br>ee l<br>1 0.01<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>70<br>a $$$<br>Tj=25°C, IF = 4Aj=25°C, IF = 4A=25°C, IF = 4AF = 4A = 4A<br>65 Tj=150°C, IF = 4Aj=150°C, IF = 4A=150°C, IF = 4AF = 4A = 4A<br>ue? 1 000<br>60<br>D=0.5<br>zm TT SAT 0 | Cc N<br>0.2<br>= A ee 55 PP [SSP ytd<br>re ate 2 a 0.1 = <<br>¢ Mera 0.05<br>50<br>: 0.1 wi 0.02 tM -<br>Se 0.01 45 ey-<br>Wwbcae= SO|ami Aees0Eee A ii eT! single pulse ntcy111 = %)reeeereeeeeee 4035 PTTae|ae|| PELEii<br>2 0.01 a | Ry Ro cn) WW r—~<br>i ee eo oo eT --f}<br>30<br>CACCSint2 Shi csIL pg esses Co=te/Re Ill PPE Tp re<br>i: 1 2 3 4 2520<br>ri[K/W]: 0.4457406 0.911159 0.9864113 0.5566891<br>| τ i[s]: 1.9E-5 2.4E-4 2.3E-3 0.02112308<br>0.001 ll 20 Py LE ELE<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 600 700 800 900 1000 1100 1200 1300 1400 1500<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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70<br>$$$<br>Tj=25°C, IF = 4Aj=25°C, IF = 4A=25°C, IF = 4AF = 4A = 4A<br>65 Tj=150°C, IF = 4Aj=150°C, IF = 4A=150°C, IF = 4AF = 4A = 4A<br>60<br>Cc N<br>55 PP [SSP ytd<br>= <<br>50<br>ey-<br>45<br>%)reeeereeeeeee 354035 PTTae|ae|| PELEii<br>WW r—~<br>30<br>PPE Tp re<br>2520 Py LE ELE<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20. Typical of diode ( _V_ R=400V)
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0.35 14<br>Tj=25°C, IF = 4A Tj=25°C, IF = 4A<br>e Tj=150°C, IF = 4A e 13 Tj=150°C, IF = 4A<br>e e eee ee<br>e 0.30 [ I T TTTT tty. 12 ET T<br>Ww _ Kk Tt<br>inapy {tiittpetr]= egia 11 Litt<br><x o<br>a =)<br>pe ttt Pe EE<br>> 0.25 10<br>WwSpWi<br>3 3 9 2<br>oeeee 0.20 8 eee—_—<br>Lu Ww | |<br>imBt Be 7 _—<br>> i l= | ji<br>uw > ao<br>a i<br>0.15 6<br>ppt or pea<br>5<br>0.10 4<br>PTET ETT TTT } ETLEE [LTT]<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 21.
Figure 22.
( _V_ R=400V) ( _V_ R=400V)
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**----- Start of picture text -----**<br>
0 27<br>Tj=25°C, IF = 4A Tj=25°C<br>Tj=150°C, IF = 4A Tj=150°C<br>Ey 24<br>-50 | Ee<br>rya 21 i!<br>-100<br>~ =<<br>18<br>= -150 uw<br>©~<br>15<br>s -200 \<br>$ > << 12<br>-250<br>o NY<br>9<br>ne} .<br>PhP E |<br>-300<br>6<br>-350<br>3<br>-400 0<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
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2.0<br>IF=4,5A<br>IF=9A<br>IF=18A<br>p e<br>1.8 e<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>aeQ 1.4 eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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High�speed�switching�series�fifth�generation
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## **Package Drawing PG-TO220-3**
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IKP08N65H5
High�speed�switching�series�fifth�generation
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## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## IKP08N65H5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-11-09|Preliminarydata sheet|
|1.2|2013-12-17|New MarkingPattern|
|2.1|2015-05-05|Final data sheet|
## **Information**
## **Warnings**
endangered.
17
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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