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IKP08N65F5XKSA1
IGBT, 8 A, 1.6 V, 70 W, 650 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins; Ope
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 70W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 8A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.646 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
High speed 5 FAST IGBT in TRENCHSTOP _ TM 5 technology copacked with RAPID 1
## IKP08N65F5
IKP08N65F5
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**----- Start of picture text -----**<br>
High speed 5 FAST IGBT in TRENCHSTOP_ TM 5 technology copacked with<br>RAPID 1 fast and soft anti parallel diode<br>Features and Benefits: C<br>High speed F5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>«Low Q g E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C C<br>* Qualified according to JEDEC for target applications :<br>¢ Pb-free lead plating; ROHS compliant 4<br>*« Complete product spectrum and PSpice Models: © Safi, 7<br>http://www.infineon.com/igbt/ iG. 7Oza_.%<br>Applications:<br>¢ Solar converters A A fr<br>* Uninterruptible power supplies Ls<br>* Welding converters G C “#<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKP08N65F5|650V|8A|1.6V|175°C|K08F655|PG-TO220-3|
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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## High�speed�switching�series�fifth�generation
## **Maximum�ratings**
|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||18.0<br>11.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||24.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||24.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||20.0<br>12.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||24.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||70.0<br>31.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||2.20|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.90|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|
Rev.�1.1,��2012-11-09
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=8.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.08mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=8.0A|-|17.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|500|-|pF|
|Output capacitance|_C_oes||-|16|-||
|Reverse transfer capacitance|_C_res||-|3|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=8.0A,<br>_V_GE=15V|-|22.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|10|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|116|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|
Rev.�1.1,��2012-11-09
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IKP08N65F5
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|129|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.04|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|41|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.14|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-160|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|27|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-300|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.10|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.13|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|165|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.06|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.08|-|mJ|
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## High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|56|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.27|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-134|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|42|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.19|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-240|-|A/µs|
Rev.�1.1,��2012-11-09
7
## IKP08N65F5 High speed switching series fifth generation
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**----- Start of picture text -----**<br>
a ee || 80<br>70<br>ANS RAAT HT<br>10<br>PFE ae<br>= YS se 60<br>x a eee eee = N<br>E eeee<br>ra ee ee | 5 50<br>2 || tp=1µs a E XI<br>10µs 40<br>S eT MM § 7] KL<br>50µs<br>BTS 1 TTA :<br>: NI g 30 X<br>OQ3 aRSS 100µs 0 ee ee<br>oO PTTHOTT 200µs eS TT o- 20 Pt | JN\ |<br>fo || \<br>500µs<br>a DC ance || \<br>PTI ISP 10<br>0.1 0<br>1 TTI 10 100 TEM 1000 = 25 PN 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>18 24<br>16 21 VGE=20V<br>18V<br>14 .<br>_ 18<br>12V<br>ae 12 eeNe_ 10V = /<br>iad w 15 7<br>8V<br>10<br>PL NUE PS 7V<br>12<br>8 6V<br>O<br>pf NOs Pa ee<br>O1 b1 9 LNW 5V Gan aoa<br>6<br>:: Ke: LAW\\ UY<br>6<br>4 \ ie<br>)<br>KN<br>2 3 Win \<br>0 0<br>P| it | tt ) D FIXAS<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
8
High speed switching series fifth generation IKP08N65F5
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**----- Start of picture text -----**<br>
24 24<br>Tj=25°C<br>Tj=150°C<br>21 VGE=20V 21<br>18V<br>18 18<br>zx 12V 7Ty IY).4: x L g<br>: 10V<br>in 15 ——sff / Z| it 15 s|<br>8V<br>8© 12 7V —| AYJ y / 8© 12 ‘|<br>6V<br>nyi 9 5V STKeeei 9 ee<br>3 NOW 3<br>© NX ©<br>6 6<br>fog] Liye<br>3 3<br>LeeeAN |<br>0 ee ee e e 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=150°C)
Figure 6. Typical ( _V_ CE=20V)
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**----- Start of picture text -----**<br>
2.00<br>IC=2A<br>IC=4A<br>IC=8A<br>:Q 1.75 Eee 100 Poe |<br>td(off)<br>E e H tf —<br>e e 1 td(on) a<br>5 | | Ee FSS<br>tr RA<br>pe OD I a ee ee ee<br>1.50<br>a i Da eeee<br>BP ey P S<br>aOp 1.25 fete Oi 10 |a es eke Danksbetee het<br>in 2) a a ee ee ee eee<br>4 ——— — - a a eeee ee<br>1.00<br>0.75 1<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=48 Ω , Dynamic test Figure E)
9
~~High speed switching series fifth generation~~ IKP08N65F5
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**----- Start of picture text -----**<br>
td(off)<br>tf<br>td(on)<br>tr<br>100 E| J Te} 100 LE—r<br>r ar H td(off) 2<br>a tf<br>oy ee ee eee | td(on) a ee ee ee eee<br>tr<br>= e a eeyee = I aee ee ee ee<br>i | of | UT i Da ee ee<br>oOes {|p|| | ye Le<br>Zz ZzoO<br>i 10 a es ee i 10 a s s<br>>= poacleee > a s s ee<br>2) pee ee —Ree 2) a a ars mies ee eee<br>- a ee ee ee ee ee - a<br>a ae a ee ee<br>Pot ee ee ee ee ee ee<br>Poe} | tT Tt a<br>7<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =4A,Dynamic test circuit in I C =4A, r G=48 ,Dynamic test circuit in Figure<br>Figure E) E)<br>5.5 0.8<br>typ. Eoff<br>min. Eon<br>>| 5.0 F max. L | 0.7 (Fe Ets<br>A 4.5 = af<br>0.6<br>e e °<br>4.0<br>0.5<br>3.5<br>0.4<br>3.0<br>BE PLT PAT OS 8 op<br>i ~ . > 0.3 a , 7<br>2.5<br>ui i |= 0.2 “ “ —<br>2.0 .<br>Bf SLUNG to =<br>0.1<br>1.5 ee<br>1.0 0.0<br>PT [ey)] : | Le . | | |<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction ( _I_ C=0.08mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=48 Ω ,Dynamic test Figure E)
10
IKP08N65F5
**==> picture [476 x 622] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.200 0.200<br>Eoff Eoff<br>Eon Eon<br>0.175 Ets 0.175 Ets<br>oy oy<br>0.150 0.150<br>Ww Ww<br>7) 7)<br>o o<br>e) 0.125 e) 0.125<br>—! —!<br>O ad eect O - eo<br>or or wen cede<br>Ww 0.100 = Ww 0.100 ape =<br>Z La Z wee ere<br>Ww ueT Ww -" cee yy<br>Z 0.075 < 0.075<br>OO<br>EE<br>= 0.050 = 0.050<br>n n<br>0.025 et Tt tt 0.025 a<br>0.000 0.000<br>elit ity } Ee]<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =4A, Dynamic test circuit in I C =4A, r G=48 ,Dynamic test circuit in Figure<br>Figure E) E)<br>0.200 16<br>130V<br>520V<br>0.175 14<br>See ee ee<br>a xan /<br>g Eoff S Li<br>0.150 12<br>Eon<br>Ets<br>ep)n <° / J /<br>e) 0.125 a 10<br>aa ue fe) a<br>><br>r<br>o Ww 0.100 > - imi 8 /<br>uwoO aeoo - : == ay ‘ ,<br>Zz 0.075 -ae - aa Wwuy 6 on ma<br>O aa <x<br>E= 0.050 we - nas )- 4 |<br>0.025 2<br>0.000 0<br>200 250 300 350 400 450 500 0.0 5.0 10.0 15.0 20.0 25.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=8A)
_T_ vj =150°C, _V_ GE=15/0V,
_I_ C =4A, _r_ G=48 E)
11
~~High speed switching series fifth generation~~ IKP08N65F5
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1000<br>Ciss<br>———=—————— TYE ATT TT TTI<br>C os s<br>Be N Crss a a co 1 aT |<br>Zz i i D=0.5 |<br><x 7, 0.2 a<br>eit) 100 = PTT 7 TTT 0.1 A||<br>LL | |) eee 0.05<br>Lu a tfpo Mt La<br>0.02<br>So RRSese ee i<br>0.01<br>e fom Wwél UeLf single pulse<br>a 0.1 ee ill<br>O = YA | | |<br>a 10 ro]——_——Pes >=2 SeLETT TT<br>———ee ee [en2) CI TT ee dl<br>ee ee 77 al<br>pSeee TIETT TIL) SHE HE<br>a ee eee I| IITA ital<br>i: 1 2 3 4<br>ri[K/W]: 0.3389743 0.8017237 0.7055106 0.3537915<br>τ i[s]: 2.2E-5 3.2E-4 3.0E-3 0.02235159<br>SO || |<br>1 0.01<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
( _V_ GE
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ues” 1 00<br>> TE a 27 4 D=0.5 1<br>0.2<br>x PTT TC 7A CUM TT<br>re ate 2 a 0.1<br>| IA a 0.05<br>: 0.1 Wi 0.02 UHI<br>Se 0.01<br>wu= |miee A | single pulse ntCT111<br>b SO Eee eT!<br>SACI I N| Ta)<br>2 0.01 a | Ry Ro cn)<br>BL et tt --f}<br>fl}<br>a PZT— +} eti/Rs Co=to/Re iIll<br>ua a A<br>i: 1 2 3 4<br>ri[K/W]: 0.4457406 0.911159 0.9864113 0.5566891<br>| τ i[s]: 1.9E-5 2.4E-4 2.3E-3 0.02112308<br>0.001 ll<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19. Diode function ( _D_ = _t_ p/T)
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70 -—___—_+ 1<br>Tj=25°C, IF = 4A<br>65 Tj=150°C, IF = 4A<br>60<br>5,<br>Ww 55 PPL) fp yy fd<br>3 =<br>Co<br>50<br>8 Se“To<br>45<br>reweeeD 4035 aePTTwa|TP TNRT<br>WW Pr]<br>30<br>2520 Py LE ELE<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 20. Typical of diode ( _V_ R=400V)
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IKP08N65F5
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0.35 14<br>Tj=25°C, IF = 4A Tj=25°C, IF = 4A<br>( Tj=150°C, I e F = 4A e 13 Tj=150°C, IF = 4A<br>| ee<br>e 0.30 LI T T TTT Tt}. 12 LE TT<br>,<br>Ww Kk /<br>inap {ii lele-Pry iage 11 EL]Te<br><x Ye y<br>x= 5 ,<br>s PTT<br>0.25 10<br>tt te Ps EL<br>>BtWi Wi Ee‘ e n<br>O > 9 -<br>orBf 0.20 5 8 Le7<br>WwW Y - L |<br>imBB 7 eeP<br>2 i aaa ji<br>ot 0.15 i 6<br>uw titi ttt itty fprty ttt<br>5<br>rrr rriT yy)x o-reTT<br>0.10 4<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22. Typical function ( _V_ R=400V)
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0 27<br>Tj=25°C, IF = 4A Tj=25°C<br>Tj=150°C, IF = 4A Tj=150°C<br>24<br>-50 es | ee ee ee<br>a 21<br>-100<br>6 18<br>-150<br>3 Stl | fp pd Pa<br>SOS a 15<br>— -200 SN<br>12<br>$ <<<br>E SO :<br>® -250<br>9<br>-300<br>6<br>-350<br>3<br>-400 0<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=400V)
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2.0<br>IF=4,5A<br>IF=9A<br>IF=18A<br>pe<br>1.8<br>po E T<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>Qie 1.4 ee eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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High�speed�switching�series�fifth�generation
## PG-TO220-3
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Rev.�1.1,��2012-11-09
IKP08N65F5
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High�speed�switching�series�fifth�generation
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Rev.�1.1,��2012-11-09
IKP08N65F5
## IKP08N65F5
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-11-09|Preliminarydata sheet|
## **Information**
## **Warnings**
endangered.
17
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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