Image not available
Illustrative purposes only
IKP04N60TXKSA1
IGBT, 9.5 A, 1.5 V, 42 W, 600 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- Available until stocks are exhausted
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP Series
- Power Dissipation: 42W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 9.5A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.544 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
IKP04N60T TRENCHSTOP[TM] Series ## Low Loss DuoPack : IGBT in TRENCHSTOP[TM] and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode - Very low VCE(sat) 1.5V (typ.) - Maximum Junction Temperature 175°C - Short circuit withstand time 5µs - Designed for: **==> picture [39 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> - Frequency Converters - Drives - TRENCHSTOP[TM] and Fieldstop technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) - Positive temperature coefficient in VCE(sat) - Low EMI - Low Gate Charge - Very soft, fast recovery anti-parallel Emitter Controlled HE diode - Qualified according to JEDEC[1)] for target applications - Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ |**Maximum Ratings**<br>|||| |---|---|---|---| |**Parameter**<br>|**Symbol**<br>~~a~~|**Value**<br>~~a~~|**Unit**| |Collector-emitter voltage,_T_j ≥25°C|_V_C E<br>~~sy~~|600<br>~~sy~~|V| |DC collector current, limited by_T_jmax<br>_T_C= 25°C<br>_T_C= 100°C|_I_C<br>~~sy~~|9.5<br>6.5<br>~~sy~~|A| |Pulsed collector current,_t_plimited by_T_jmax|_I_C p u l s<br>~~|~~|12|| |Turn off safe operating area,_V_CE= 600V,_T_j= 175°C,_t_p= 1µs|_-_<br>~~es~~|12<br>~~es~~|| |Diode forward current, limited by Tjmax<br>_T_C= 25°C<br>_T_C= 100°C|_I_F<br>~~|~~|9.5<br>6.5<br>~~|~~|| |Diode pulsed current,_t_plimited by_T_jmax|_I_F p u l s<br>~~a~~|12<br>~~a~~|| |Gate-emitter voltage|_V_G E<br>~~ee~~|±20<br>~~ee~~|V| |Short circuit withstand time2)<br>_V_GE= 15V,_V_CC≤400V,_T_j≤150°C|_t_S C<br>~~|~~|5<br>~~|~~|µs| |Power dissipation_T_C= 25°C|_P_t o t<br>~~|~~|42<br>~~|~~|W| |Operating junction temperature|_T_j<br>~~|~~|-40...+175<br>~~|~~|°C| |Storage temperature|_T_s t g<br>~~ee~~|-55...+150<br>~~ee~~|| |Soldering temperature, 1.6mm (0.063 in.) from case for 10s|-<br>~~a~~|260|| - 1) J-STD-020 and JESD-022 - 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev. 2.8 17.02.2016 1 IFAG IPC TD VLS IKP04N60T TRENCHSTOP[TM] Series **==> picture [137 x 61] intentionally omitted <==** ## **Thermal Resistance** |**Thermal Resistance**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**| |**Characteristic**||||| |IGBT thermal resistance,<br>junction – case|_R_t h J C||3.5|K/W| |Diode thermal resistance,<br>junction – case|_R_t h J C D||5|| |Thermal resistance,<br>junction – ambient|_R_t h J A||62|| ## **Electrical Characteristic,** at _T_ j = 25°C, unless otherwise specified |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**Typ.**|**max.**|| |**Static Characteristic**||||||| |Collector-emitter breakdown voltage|_V_( B R ) C E S|_V_G E=0V, _I_C=0.2mA|600|-|-|V| |Collector-emitter saturation voltage|_V_C E ( s a t )|_V_G E = 15V, _I_C=4A<br>_T_j=25°C<br>_T_j=175°C|-<br>-|1.5<br>1.9|2.05<br>-|| |Diode forward voltage|_V_F|_V_G E=0V, _I_F=4A<br>_T_j=25°C<br>_T_j=175°C|-<br>-|1.65<br>1.6|2.05<br>-|| |Gate-emitter threshold voltage|_V_G E ( t h )|_I_C= 60µA,_V_C E=_V_G E|4.1|4.9|5.7|| |Zero gate voltage collector current|_I_C E S|_V_C E=600V, _V_G E=0V<br>_T_j=25°C<br>_T_j=175°C|-<br>-|-<br>-|40<br>1000|µA| |Gate-emitter leakage current|_I_G E S|_V_C E=0V,_V_G E=20V|-|-|100|nA| |Transconductance|_g_f s|_V_C E=20V, _I_C=4A|-|2.2|-|S| |Integrated gate resistor|_R G in t_|||-||Ω| |**Dynamic Characteristic**||||||| |Input capacitance|_C_i e s|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|252|-|pF| |Output capacitance|_C_o e s||-|20|-|| |Reverse transfer capacitance|_C_r e s||-|7.5|-|| |Gate charge|_Q_G a t e|_V_C C=480V, _I_C=4A<br>_V_G E=15V|-|27|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from case|_L_E||-|7|-|nH| |Short circuit collector current1)|_I_C ( S C )|_V_G E=15V,_t_S C≤5µs<br>_V_C C = 400V,<br>_T_j ≤150°C|-|36|-|A| - 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev. 2.8 17.02.2016 2 IFAG IPC TD VLS IKP04N60T TRENCHSTOP[TM] Series **==> picture [137 x 61] intentionally omitted <==** **Switching Characteristic, Inductive Load,** at _T_ j=25 °C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**Typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=25°C,<br>_V_C C=400V,_I_C=4A,<br>_V_G E=0/15V,<br>_R_G= 47Ω,<br>_L_σ<br>_1 )_=150nH,<br>_C_σ<br>_1)_=47pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|14|-|ns| |Rise time|_t_r||-|7|-|| |Turn-off delaytime|_t_d( of f)||-|164|-|| |Fall time|_t_f||-|43|-|| |Turn-on energy|_E_o n||-|61|-|µJ| |Turn-off energy|_E_o ff||-|84|-|| |Total switchingenergy|_E_t s||-|145|-|| |**Anti-Parallel Diode Characteristic**||||||| |Diode reverse recoverytime|_t_rr|_T_j=25°C,<br>_V_R=400V, _I_F=4A,<br>_di_F_/dt_=610A/µs|-|28|-|ns| |Diode reverse recoverycharge|_Q_rr||-|79|-|nC| |Diodepeak reverse recoverycurrent|_I_rr m||-|5.3|-|A| |Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|346|-|A/µs| **Switching Characteristic, Inductive Load,** at _T_ j=175°C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**Typ.**|**max.**|| |**IGBT Characteristic**||||||| |Turn-on delaytime|_t_d( o n)|_T_j=175°C,<br>_V_C C=400V,_I_C=4A,<br>_V_G E=0/15V,<br>_R_G= 47Ω<br>_L_σ<br>_1 )_=150nH,<br>_C_σ<br>_1)_=47pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|14|-|ns| |Rise time|_t_r||-|10|-|| |Turn-off delaytime|_t_d( of f)||-|185|-|| |Fall time|_t_f||-|83|-|| |Turn-on energy|_E_o n||-|99|-|µJ| |Turn-off energy|_E_o ff||-|97|-|| |Total switchingenergy|_E_t s||-|196|-|| |**Anti-Parallel Diode Characteristic**||||||| |Diode reverse recoverytime|_t_rr|_T_j=175°C<br>_V_R=400V, _I_F=4A,<br>_di_F_/dt_=610A/µs|-|95|-|ns| |Diode reverse recoverycharge|_Q_rr||-|291|-|nC| |Diodepeak reverse recoverycurrent|_I_rr m||-|6.6|-|A| |Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|253|-|A/µs| > 1) Leakage inductance _L_ σ and Stray capacity _C_ σ due to dynamic test circuit in Figure E. Rev. 2.8 17.02.2016 3 IFAG IPC TD VLS TRENCHSTOP[TM] Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [234 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> 12A<br>10A<br>T C=80°C<br>8A<br>T C=110°C<br>6A<br>4A I c<br>2A<br>I c<br>0A<br>10Hz 100Hz 1kHz 10kHz 100kHz<br>COLLECTOR CURRENT<br>I C,<br>**----- End of picture text -----**<br> **==> picture [108 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> f , SWITCHING FREQUENCY<br>**----- End of picture text -----**<br> ## **Figure 1. Collector current as a function of switching frequency** - ( _T_ j ≤ 175°C, _D =_ 0.5, _V_ CE = 400V, _V_ GE = 0/15V, _R_ G = 47Ω) **==> picture [229 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 40W<br>30W<br>20W<br>10W<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br> _T_ C, CASE TEMPERATURE **Figure 3. Power dissipation as a function of case temperature** ( _T_ j ≤ 175°C) ## IKP04N60T **==> picture [221 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> t p=2µs<br>10A<br>10µs<br>1A<br>50µs<br>1ms<br>0.1A<br>DC<br>10ms<br>1V 10V 100V 1000V<br>COLLECTOR CURRENT<br>I C,<br>**----- End of picture text -----**<br> _V_ CE, COLLECTOR-EMITTER VOLTAGE **Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25°C, _T_ j ≤175°C; _V_ GE=0/15V) **==> picture [232 x 271] intentionally omitted <==** **----- Start of picture text -----**<br> 8A<br>6A<br>4A<br>2A<br>0A<br>25°C 75°C 125°C<br>T C, CASE TEMPERATURE<br>Figure 4. Collector current as a function of<br>case temperature<br>( V GE ≥ 15V, T j ≤ 175°C)<br>COLLECTOR CURRENT<br>I C,<br>**----- End of picture text -----**<br> Rev. 2.8 17.02.2016 4 IFAG IPC TD VLS **==> picture [137 x 61] intentionally omitted <==** ## TRENCHSTOP[TM] Series ## IKP04N60T **==> picture [475 x 630] intentionally omitted <==** **----- Start of picture text -----**<br> 10A 10A<br>8A V GE=20V 8A V GE=20V<br>15V 15V<br>13V 13V<br>6A 6A<br>11V 11V<br>9V 9V<br>4A 4A<br>7V 7V<br>2A 2A<br>0A 0A<br>0V 1V 2V 3V 0V 1V 2V 3V<br>V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j = 25°C) ( T j = 175°C)<br>2.5V<br>8A I C =8A<br>2.0V<br>6A<br>1.5V IC =4A<br>4A<br>1.0V I C =2A<br>2A T J =175°C 0.5V<br>25°C<br>0A 0.0V<br>0V 2V 4V 6V 8V 0°C 50°C 100°C 150°C<br>V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter<br>(VCE=20V) saturation voltage as a function of<br>junction temperature<br>( V GE = 15V)<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>I C, I C,<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR CURRENT<br>I C,<br> COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br> Rev. 2.8 17.02.2016 IFAG IPC TD VLS 5 IKP04N60T TRENCHSTOP[TM] Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [229 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>10ns<br>t r<br>1ns<br>0A 2A 4A 6A<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **==> picture [105 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br> **Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE = 400V, VGE = 0/15V, _R_ G = 47Ω, Dynamic test circuit in Figure E) **==> picture [229 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>10ns<br>t r<br>25°C 50°C 75°C 100°C 125°C 150°C<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **==> picture [119 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> **==> picture [205 x 57] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 11. Typical switching times as a<br>function of junction temperature<br>(inductive load, V CE = 400V,<br>VGE = 0/15V, I C = 4A, R G=47Ω,<br>Dynamic test circuit in Figure E)<br>**----- End of picture text -----**<br> **==> picture [233 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>10ns<br>t r<br>50Ω 100Ω 150Ω 200Ω 250Ω<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **==> picture [84 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> R G, GATE RESISTOR<br>**----- End of picture text -----**<br> **Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J = 175°C, _V_ CE= 400V, VGE = 0/15V, _I_ C = 4A, Dynamic test circuit in Figure E) **==> picture [230 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> 7V<br>6V<br>max.<br>typ.<br>5V<br>4V min.<br>3V<br>2V<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>EMITT TRSHOLD VOLTAGE<br>-<br> GATEGE(th ) ,<br>V<br>**----- End of picture text -----**<br> **==> picture [119 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 60µA) Rev. 2.8 17.02.2016 6 IFAG IPC TD VLS IKP04N60T **==> picture [137 x 61] intentionally omitted <==** ## TRENCHSTOP[TM] Series **==> picture [230 x 223] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br>due to diode recovery E *<br>0.4 mJ ts<br>0.3 mJ E off<br>0.2 mJ<br>E on *<br>0.1 mJ<br>0.0 mJ<br>25Ω50Ω 100Ω 150Ω 200Ω 250Ω<br>SWITCHING ENERGY LOSSES<br>E ,<br>**----- End of picture text -----**<br> **==> picture [235 x 232] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E tsinclude losses<br>due to diode recovery<br>E ts*<br>0.3m J<br>E off<br>0.2m J<br>E on*<br>0.1m J<br>0.0m J<br>0A 2A 4A 6A<br>IC , COLLECTOR CURRENT<br>SWITCHING ENERGY LOSSES<br>E ,<br>**----- End of picture text -----**<br> **==> picture [84 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> R G, GATE RESISTOR<br>**----- End of picture text -----**<br> **Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J = 175°C, _V_ CE = 400V, VGE = 0/15V, _R_ G = 47Ω, Dynamic test circuit in Figure E) - **Figure 14. Typical switching energy losses as a function of gate resistor** (inductive load, _T_ J = 175°C, _V_ CE = 400V, VGE = 0/15V, _I_ C = 4A, Dynamic test circuit in Figure E) **==> picture [236 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br>175µ J due to diode recovery<br>150µ J<br>125µ J E ts*<br>100µ J<br>E off<br>75µ J<br>50µ J E on *<br>25µ J<br>0µJ<br>25°C 50°C 75°C 100°C 125°C 150°C<br>T J, JUNCTION TEMPERATURE<br>SWITCHING ENERGY LOSSES<br>E ,<br>**----- End of picture text -----**<br> **Figure 15. Typical switching energy losses as a function of junction temperature** - (inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 4A, _R_ G = 47Ω, Dynamic test circuit in Figure E) **==> picture [227 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> *) E on and E ts include losses<br>due to diode recovery<br>0.25mJ<br>0.20mJ<br>E ts*<br>0.15mJ<br>0.10mJ E off<br>0.05mJ E on*<br>0.00mJ<br>300V 350V 400V 450V<br>SWITCHING ENERGY LOSSES<br>E ,<br>**----- End of picture text -----**<br> **==> picture [150 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> VCE , COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br> **Figure 16. Typical switching energy losses as a function of collector emitter voltage** - (inductive load, _T_ J = 175°C, _V_ GE = 0/15V, _I_ C = 4A, _R_ G = 47Ω, Dynamic test circuit in Figure E) Rev. 2.8 17.02.2016 IFAG IPC TD VLS 7 IKP04N60T TRENCHSTOP[TM] Series **==> picture [137 x 61] intentionally omitted <==** **==> picture [234 x 226] intentionally omitted <==** **----- Start of picture text -----**<br> 15V 120V<br>480V<br>10V<br>5V<br>0V<br>0nC 5nC 10nC 15nC 20nC 25nC 30nC<br>Q GE, GATE CHARGE<br>EMITTER VOLTAGE<br>-<br>GATE<br>GE,<br>V<br>**----- End of picture text -----**<br> **Figure 17. Typical gate charge** ( _I_ C=4A) **==> picture [221 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>ies<br>100pF<br>C<br>oes<br>10pF<br>C<br>res<br>0V 10V 20V 30V 40V 50V 60V 70V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br> **==> picture [150 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br> **Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1MHz) **==> picture [466 x 216] intentionally omitted <==** **----- Start of picture text -----**<br> 12µs<br>60A<br>10µs<br>50A<br>8µs<br>40A<br>6µs<br>30A<br>4µs<br>20A<br>2µs<br>10A<br>0µs<br>0A 10V 11V 12V 13V 14V<br>12V 14V 16V 18V<br>COLLECTOR CURRENT<br>SHORT CIRCUIT WITHSTAND TIME<br>, short circuit ,<br>t SC<br>I C(sc)<br>**----- End of picture text -----**<br> _V_ GE, GATE-EMITTETR VOLTAGE **Figure 19. Typical short circuit collector current as a function of gateemitter voltage** ( _V_ CE ≤ 400V, _T_ j ≤ 150°C) **==> picture [123 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> V GE, GATE-EMITETR VOLTAGE<br>**----- End of picture text -----**<br> **Figure 20. Short circuit withstand time as a function of gate-emitter voltage** ( _V_ CE=400V _,_ start at _T_ J _=_ 25°C, _T_ Jmax<150°C) Rev. 2.8 17.02.2016 8 IFAG IPC TD VLS IKP04N60T **==> picture [137 x 61] intentionally omitted <==** ## TRENCHSTOP[TM] Series **==> picture [480 x 241] intentionally omitted <==** **----- Start of picture text -----**<br> D =0.5 D =0.5<br>10 0K/W<br>0.2 R , ( K / W ) τ , * ( s ) 10 0K/W 0.2 R , ( K / W ) τ , ( s )<br>0.38216 5.16 10 [-2] *<br>0.29183 7.018 10 [-2] 6<br>0.1 0.68326 7.818*10 [-][3] 0.1 0.79081 1.114*10 [-2]<br>1.49884 9*10 [-4] *<br>1.86970 1.236 10 [-3]<br>0.93550 1.134*10 [-4] *<br>2.04756 2.101 10 [-4]<br>0.05 R 1 R 2 0.05 R 1 R 2<br>-1 0.02<br>10 K/W 0.01 C 1 =τ1 / R 1 C 2 =τ2 / R 2 10 -1K/W 0.02 C 1 =τ1 / R 1 C 2 =τ2 / R 2<br>single pulse<br>0.01<br>single pulse<br>1µs 10µs 100µs 1ms 10ms 100ms 1µs 10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH t P, PULSE WIDTH<br>TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE<br>thJC, thJC,<br>Z Z<br>**----- End of picture text -----**<br> **Figure 21. IGBT transient thermal impedance** ( _D = t_ p/ _T_ ) **Figure 22. Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ P/ _T_ ) **==> picture [230 x 239] intentionally omitted <==** **----- Start of picture text -----**<br> 280ns<br>240ns<br>T =175°C<br>200ns J<br>160ns<br>120ns<br>80ns<br>T =25°C<br>J<br>40ns<br>0ns<br>400A/µs 600A/µs<br>di F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY TIME<br>t rr,<br>**----- End of picture text -----**<br> **Figure 23. Typical reverse recovery time as a function of diode current slope** ( _V_ R=400V, _I_ F=4A, Dynamic test circuit in Figure E) **==> picture [232 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> 0.35µC<br>T =175°C<br>J<br>0.30µC<br>0.25µC<br>0.20µC<br>T =25°C<br>0.15µC J<br>0.10µC<br>0.05µC<br>0.00µC<br>400A/µs 600A/µs<br>REVERSE RECOVERY CHARGE<br>rr,<br>Q<br>**----- End of picture text -----**<br> **==> picture [125 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> di F /dt , DIODE CURRENT SLOPE<br>**----- End of picture text -----**<br> ## **Figure 24. Typical reverse recovery charge as a function of diode current slope** ( _V_ R = 400V, _I_ F = 4A, Dynamic test circuit in Figure E) Rev. 2.8 17.02.2016 9 IFAG IPC TD VLS **==> picture [137 x 61] intentionally omitted <==** ## TRENCHSTOP[TM] Series ## IKP04N60T **==> picture [232 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> T =175°C<br>10A J<br>8A<br>6A<br>T =25°C<br>J<br>4A<br>2A<br>0A<br>400A/µs 600A/µs<br>REVERSE RECOVERY CURRENT<br>I rr,<br>**----- End of picture text -----**<br> _di_ F _/dt_ , DIODE CURRENT SLOPE ## **Figure 25. Typical reverse recovery current as a function of diode current slope** ( _V_ R = 400V, _I_ F = 4A, Dynamic test circuit in Figure E) **==> picture [235 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> T =175°C<br>J<br>-300A/µs<br>T =25°C<br>J<br>-200A/µs<br>-100A/µs<br>0A/µs<br>400A/µs 600A/µs<br>DIODE PEAK RATE OF FALL<br>/dt ,<br>rr<br>di OF REVERSE RECOVERY CURRENT<br>**----- End of picture text -----**<br> _di_ F _/dt_ , DIODE CURRENT SLOPE **Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** ( _V_ R=400V, _I_ F=4A, Dynamic test circuit in Figure E) **==> picture [475 x 240] intentionally omitted <==** **----- Start of picture text -----**<br> 10A IF =8A<br>2.0V<br>8A<br>1.5V 4A<br>6A<br>2A<br>1.0V<br>T J =25°C<br>4A<br>175°C<br>0.5V<br>2A<br>0A 0.0V<br>0°C 50°C 100°C 150°C<br>0V 1V 2V<br>V F, FORWARD VOLTAGE T J,, JUNCTION TEMPERATURE<br>I FORWARD CURRENTF, V FORWARD VOLTAGEF,<br>**----- End of picture text -----**<br> **==> picture [119 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> T J,, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 27. Typical diode forward current as a function of forward voltage** **Figure 28. Typical diode forward voltage as a function of junction temperature** Rev. 2.8 17.02.2016 10 IFAG IPC TD VLS IKP04N60T TRENCHSTOP[TM] Series Rev. 2.8 17.02.2016 11 IFAG IPC TD VLS TRENCHSTOP[TM] Series ## IKP04N60T Rev. 2.8 17.02.2016 12 IFAG IPC TD VLS IKP04N60T TRENCHSTOP[TM] Series **==> picture [137 x 61] intentionally omitted <==** **Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2016. All Rights Reserved.** ## **IMPORTANT NOTICE** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Rev. 2.8 17.02.2016 13 IFAG IPC TD VLS
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →