IKN04N60RC2ATMA1

IGBT, 7.5 A, 2 V, 6.8 W, 600 V, SOT-223, 3 Pins

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: Single IGBTs
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Power Dissipation: 6.8W
Transistor Mounting: Surface Mount
DC Collector Current: 7.5A
Power Dissipation Pd: 6.8W
Transistor Case Style: SOT-223
Operating Temperature Max: 150°C
Continuous Collector Current: 7.5A
Collector Emitter Voltage Max: 600V
Automotive Qualification Standard: -
Collector Emitter Voltage V(br)ceo: 600V
Collector Emitter Saturation Voltage: 2V
Collector Emitter Saturation Voltage Vce(on): 2V

Delivery and price
Units per pack	5000
Price	0.216 €
Current stock	10+
Lead time	30 days

Datasheet

**IKN04N60RC2 600 V Reverse Conducting Drive 2** 

## **600 V Reverse Conducting Drive 2 offering cost effective IGBT with monolithically integrated diode** 

## **Features** 

- VCE = 600 V 

- IC = 4 A 

- Very tight parameter distribution 

- Operating range of 1 to 20 kHz 

- Maximum junction temperature 150°C 

- Short circuit capability of 3 µs 

- Humidity robust design 

- Pb-free lead plating; RoHS compliant 

- Complete product spectrum and PSpice Models: http://www.infineon.com/rc-d2 

## **Potential applications** 

- Ceiling fan 

- Countertop appliances - mixing 

- Kitchen hood 

- Refrigerators 

- Residential aircon indoor unit 

- Washing machines 

- General purpose drives (GPD) 

## **Product validation** 

- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 

## **Description** 

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**----- Start of picture text -----**<br>
C<br>G<br>E<br>**----- End of picture text -----**<br>


**Type Package Marking** IKN04N60RC2 PG-SOT223-3 K4DRC2 ~~ee~~ 

Please read the Important Notice and Warnings at the end of this document 

Datasheet www.infineon.com 

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**Table of contents** 

## **Table of contents** 

||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3|
|**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5|
|**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14|
|**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17|



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## **1 Package** 

## **1 Package** 

|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|||||
|---|---|---|---|---|---|---|
|**Table 1**<br>**Characteristic values**|||||||
|**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**|
||||**Min.**|**Typ.**|**Max.**||
|Storage temperature|_T_stg||-55||150|°C|
|Soldering temperature||reflow soldering (MSL1 according to JEDEC<br>J-STA-020)|||260|°C|
|Thermal resistance,<br>min.footprint junction-<br>ambient|_R_th(j-a)||||160|K/W|
|Thermal resistance, 6 cm2Cu<br>on PCB junction to ambient|_R_th(j-a)||||75|K/W|



## **2 IGBT** 

|**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**||||
|---|---|---|---|---|---|
|**Table 2**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||600|V|
|DC collector current, limited<br>by Tvjmax _1)_|_I_C||_T_c= 25 °C|7.5|A|
||||_T_c= 100 °C|4.1||
|Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpuls|||12|A|
|Turn-of safe operating area||_V_CE≤ 600 V,_t_p= 1 µs,_T_vj≤ 150 °C||12|A|
|Gate-emitter voltage|_V_GE|||±20|V|
|Transient gate-emitter<br>voltage|_V_GE|_t_p≤ 10 µs,_D_<0.01||±30|V|
|Short-circuit withstand time|_t_SC|_V_CC≤ 400 V,_V_GE= 15 V, Allowed number of<br>short circuits < 1000, Time between short<br>circuits ≥ 1.0 s,_T_vj= 150 °C||3|µs|
|Power dissipation|_P_tot||_T_c= 25 °C|6.8|W|
||||_T_c= 100 °C|2.7||
|_1)_<br>DPAK equivalent||||||
|**Table 3**<br>**Characteristic values**||||||



|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Collector-emitter saturation<br>voltage|_V_CEsat|_I_C= 4.0 A,_V_GE= 15 V|_T_vj= 25 °C||2|2.3|V|
||||_T_vj= 150 °C||2.3|||
|**(table continues...)**||||||||



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## **2 IGBT** 

|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 45.00 µA, VCE= VGE||4.3|5|5.7|V|
|Zero gate-voltage collector<br>current|_I_CES|_V_CE= 600 V,_V_GE=0 V|_T_vj= 25 °C|||25|µA|
||||_T_vj= 150 °C|||2500||
|Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA|
|Transconductance|_g_fs|_I_C= 4.0 A,_V_CE= 20 V|||2||S|
|Input capacitance|_C_ies|_V_CE= 25 V,_V_GE=0 V,_f_= 1000 kHz|||180||pF|
|Output capacitance|_C_oes|_V_CE= 25 V,_V_GE=0 V,_f_= 1000 kHz|||10||pF|
|Reverse transfer capacitance|_C_res|_V_CE= 25 V,_V_GE=0 V,_f_= 1000 kHz|||7||pF|
|Gate charge|_Q_G|_I_C= 4.0 A,_V_CE= 480 V,_V_GE|= 15 V||24||nC|
|Turn-on delay time|_t_don|_V_CE= 400 V,_V_GE= 0/15 V,<br>_R_Gon= 49.0 Ω,<br>_R_Gof= 49.0 Ω,<br>_L_σ= 30 nH,_C_σ= 32 pF|_T_vj= 25 °C,<br>_I_C= 4.0 A||8||ns|
||||_T_vj= 150 °C,<br>_I_C= 4.0 A||8|||
|Rise time (inductive load)|_t_r|_V_CE= 400 V,_V_GE= 0/15 V,<br>_R_Gon= 49.0 Ω,<br>_R_Gof= 49.0 Ω,<br>_L_σ= 30 nH,_C_σ= 32 pF|_T_vj= 25 °C,<br>_I_C= 4.0 A||10||ns|
||||_T_vj= 150 °C,<br>_I_C= 4.0 A||10|||
|Turn-of delay time|_t_dof|_V_CE= 400 V,_V_GE= 0/15 V,<br>_R_Gon= 49.0 Ω,<br>_R_Gof= 49.0 Ω,<br>_L_σ= 30 nH,_C_σ= 32 pF|_T_vj= 25 °C,<br>_I_C= 4.0 A||126||ns|
||||_T_vj= 150 °C,<br>_I_C= 4.0 A||137|||
|Fall time (inductive load)|_t_f|_V_CE= 400 V,_V_GE= 0/15 V,<br>_R_Gon= 49.0 Ω,<br>_R_Gof= 49.0 Ω,<br>_L_σ= 30 nH,_C_σ= 32 pF|_T_vj= 25 °C,<br>_I_C= 4.0 A||24||ns|
||||_T_vj= 150 °C,<br>_I_C= 4.0 A||26|||
|Turn-on energy|_E_on|_V_CE= 400 V,_V_GE= 0/15 V,<br>_R_Gon= 49.0 Ω,<br>_R_Gof= 49.0 Ω,<br>_L_σ= 30 nH,_C_σ= 32 pF|_T_vj= 25 °C,<br>_I_C= 4.0 A||95||µJ|
||||_T_vj= 150 °C,<br>_I_C= 4.0 A||127|||
|Turn-of energy|_E_of|_V_CE= 400 V,_V_GE= 0/15 V,<br>_R_Gon= 49.0 Ω,<br>_R_Gof= 49.0 Ω,<br>_L_σ= 30 nH,_C_σ= 32 pF|_T_vj= 25 °C,<br>_I_C= 4.0 A||62||µJ|
||||_T_vj= 150 °C,<br>_I_C= 4.0 A||82|||



**(table continues...)** 

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## **3 Diode** 

## **(continued) Characteristic values** 

|||||||||
|---|---|---|---|---|---|---|---|
|**Table 3**<br>**(continued) Characteristic values**||||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Total switching energy|_E_ts|_V_CE= 400 V,_V_GE= 0/15 V,<br>_R_Gon= 49.0 Ω,<br>_R_Gof= 49.0 Ω,<br>_L_σ= 30 nH,_C_σ= 32 pF|_T_vj= 25 °C,<br>_I_C= 4.0 A||157||µJ|
||||_T_vj= 150 °C,<br>_I_C= 4.0 A||209|||
|IGBT thermal resistance,<br>junction to case_1)_|_R_thjc|||||18.4|K/W|
|Operating junction<br>temperature|_T_vj|||-40||150|°C|



_1)_ Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 

_Note: Electrical Characteristic, at T_ vj _=25°C, unless otherwise specified_ 

## **3 Diode** 

|**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**||||
|---|---|---|---|---|---|
|**Table 4**<br>**Maximum rated values**||||||
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**|
|Repetitive peak reverse<br>voltage|_V_RRM|_T_vj≥ 25 °C||600|V|
|Diode forward current,<br>limited by Tvjmax _1)_|_I_F||_T_c= 25 °C|4.9|A|
||||_T_c= 100 °C|2.3||
|Diode pulsed current,<br>limited by Tvjmax|_I_Fpuls|||12|A|



_1)_ DPAK equivalent 

**Table 5** 

## **Characteristic values** 

|**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**|
|---|---|---|---|---|---|---|---|
|||||**Min.**|**Typ.**|**Max.**||
|Diode forward voltage|_V_F|_I_F= 4.0 A|_T_vj= 25 °C||1.85|2.2|V|
||||_T_vj= 150 °C||1.9|||
|Diode reverse recovery time|_t_rr|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 4.0 A,<br>_-di_F_/dt_= 483 A/µs||39||ns|
||||_T_vj= 150 °C,<br>_I_F= 4.0 A,<br>_-di_F_/dt_= 500 A/µs||100|||



## **(table continues...)** 

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**3 Diode** 

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|**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Diode reverse recovery<br>charge|_Q_rr|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 4.0 A,<br>_-di_F_/dt_= 483 A/µs||0.097||µC|
||||_T_vj= 150 °C,<br>_I_F= 4.0 A,<br>_-di_F_/dt_= 500 A/µs||0.259|||
|Diode peak reverse recovery<br>current|_I_rrm|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 4.0 A,<br>_-di_F_/dt_= 483 A/µs||4.7||A|
||||_T_vj= 150 °C,<br>_I_F= 4.0 A,<br>_-di_F_/dt_= 500 A/µs||5.8|||
|Diode peak rate of fall of<br>reverse recovery current|_dI_rr_/dt_|_V_R= 400 V|_T_vj= 25 °C,<br>_I_F= 4.0 A,<br>_-di_F_/dt_= 483 A/µs||-174||A/µs|
||||_T_vj= 150 °C,<br>_I_F= 4.0 A,<br>_-di_F_/dt_= 500 A/µs||-67.4|||
|Diode thermal resistance,<br>junction to case_1)_|_R_thjc|||||26.3|K/W|
|Operating junction<br>temperature|_T_vj|||-40||150|°C|



_1)_ Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the diode, is not possible using a thermocouple. 

_Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ 

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## **4 Characteristics diagrams** 

## **4 Characteristics diagrams** 

**Power dissipation as a function of case temperature, IGBT** Ptot = f(Tc) T ≤ 150 °C vj 

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7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Typical output characteristic, IGBT** IC = f(VCE) T = 25 °C vj 

**Collector current, DPAK equivalent, as a function of case temperature, IGBT** IC = f(Tc) Tvj ≤ 150 °C, VGE ≥ 15 V 

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7.5<br>6.0<br>4.5<br>3.0<br>1.5<br>0.0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Typical output characteristic, IGBT** IC = f(VCE) T = 150 °C vj 

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12 12<br>10 10<br>8 8<br>6 6<br>4 4<br>2 2<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>**----- End of picture text -----**<br>


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## **4 Characteristics diagrams** 

## **Typical transfer characteristic, IGBT** 

IC = f(VGE) 

## VCE = 20 V 

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16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>3.0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0<br>**----- End of picture text -----**<br>


## **Gate-emitter threshold voltage as a function of junction temperature, IGBT** 

VGEth = f(Tvj) IC = 45 µA 

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7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


## **Typical collector-emitter saturation voltage as a function of junction temperature, IGBT** 

VCEsat = f(Tvj) VGE = 15 V 

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4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


## **Typical switching times as a function of collector current, IGBT** 

t = f(IC) 

VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 49 Ω 

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1000<br>100<br>10<br>1<br>2 3 4 5 6 7 8<br>**----- End of picture text -----**<br>


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## **4 Characteristics diagrams** 

## **Typical switching times as a function of gate resistor, IGBT** 

## **Typical switching times as a function of junction temperature, IGBT** 

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**----- Start of picture text -----**<br>
t = f(RG) t = f(Tvj)<br>IC = 4 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V IC = 4 A, VCE = 400 V, VGE = 0/15 V, RG = 49 Ω<br>1000<br>1000<br>100<br>100<br>10<br>10<br>1 1<br>0 200 400 600 800 1000 25 50 75 100 125 150<br>Typical switching energy losses as a function of Typical switching energy losses as a function of gate<br>collector current, IGBT resistor, IGBT<br>E = f(IC) E = f(RG)<br>VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 49 Ω IC = 4 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V<br>500 1600<br>1400<br>400<br>1200<br>1000<br>300<br>800<br>200<br>600<br>400<br>100<br>200<br>0 0<br>1 2 3 4 5 6 7 8 0 200 400 600 800 1000<br>**----- End of picture text -----**<br>


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## **4 Characteristics diagrams** 

## **Typical switching energy losses as a function of junction temperature, IGBT** 

E = f(Tvj) 

## **Typical switching energy losses as a function of collector emitter voltage, IGBT** 

E = f(VCE) 

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**----- Start of picture text -----**<br>
IC = 4 A, VCE = 400 V, VGE = 0/15 V, RG = 49 Ω IC = 4 A, Tvj = 150 °C, VGE = 0/15 V, RG = 49 Ω<br>300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>25 50 75 100 125 150 200 250 300 350 400 450 500<br>Typical gate charge, IGBT Typical capacitance as a function of collector-emitter<br>VGE = f(QGE) voltage, IGBT<br>IC = 4 A C = f(VCE)<br>f = 1000 kHz, VGE = 0 V<br>15 1000<br>12<br>100<br>9<br>6<br>10<br>3<br>0 1<br>0 4 8 12 16 20 24 0 5 10 15 20 25 30<br>**----- End of picture text -----**<br>


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## **4 Characteristics diagrams** 

## **Typical short circuit collector current as a function of gate-emitter voltage, IGBT** 

IC(SC) = f(VGE) 

## **IGBT transient thermal resistance, IGBT** 

Zth = f(tp) D = tp/T 

## VCE ≤ 400 V, Tvj ≤ 150 °C 

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40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>12 13 14 15 16 17 18<br>**----- End of picture text -----**<br>


## **Diode transient thermal impedance as a function of pulse width, Diode** 

Zth = f(tp) 

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100<br>10<br>1<br>0.1<br>0.01<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br>


## **Typical diode forward current as a function of forward voltage, Diode** 

IF = f(VF) 

D = tp/T 

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100<br>10<br>1<br>0.1<br>0.01<br>0.001<br>1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br>


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12<br>10<br>8<br>6<br>4<br>2<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>**----- End of picture text -----**<br>


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**4 Characteristics diagrams** 

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## **Typical diode forward voltage as a function of junction temperature, Diode** 

VF = f(Tvj) 

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3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br>


**Typical reverse recovery charge as a function of diode current slope, Diode** 

Qrr = f(diF/dt) VR = 400 V, IF = 4 A 

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0.35<br>0.30<br>0.25<br>0.20<br>0.15<br>0.10<br>0.05<br>0.00<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br>


## **Typical reverse recovery time as a function of diode current slope, Diode** 

trr = f(diF/dt) VR = 400 V, IF = 4 A 

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320<br>280<br>240<br>200<br>160<br>120<br>80<br>40<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br>


**Typical reverse recovery current as a function of diode current slope, Diode** Irr = f(diF/dt) VR = 400 V, IF = 4 A 

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10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br>


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**IKN04N60RC2 600 V Reverse Conducting Drive 2** 

**4 Characteristics diagrams** 

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## **Typical diode peak rate of fall of reverse recovery current as a function of diode current slope, Diode** 

dIrr/dt = f(diF/dt) 

## VR = 400 V, IF = 4 A 

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0<br>-50<br>-100<br>-150<br>-200<br>-250<br>-300<br>-350<br>-400<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br>


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**IKN04N60RC2 600 V Reverse Conducting Drive 2** 

**5** 

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## **5 Package outlines** 

## **Package outlines** 

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PG-SOT223-3<br>**----- End of picture text -----**<br>


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DOCUMENT NO.<br>Z8B00180553<br>SCALE 0<br>MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX 2.5<br>A 1.52 1.80 0.060 0.071<br>A1 - 0.10 - 0.004 0 2.5<br>A2 1,50 1.70 0.059 0.067 5mm<br>b 0.60 0.80 0.024 0.031<br>b2 2.95 3.10 0.116 0.122 EUROPEAN PROJECTION<br>c 0.24 0.32 0.009 0.013<br>D 6.30 6.70 0.248 0.264<br>E 6.70 7.30 0.264 0.287<br>E1 3.30 3.70 0.130 0.146<br>e 2.3 BASIC 0.091 BASIC<br>e1 4.6 BASIC 0.181 BASIC ISSUE DATE<br>L 0.75 1.10 0.030 0.043 24-02-2016<br>N 3 3<br>O �� ��� �� ��� REVISION<br>01<br>**----- End of picture text -----**<br>


**Figure 1** 

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**IKN04N60RC2 600 V Reverse Conducting Drive 2** 

**6 Testing conditions** 

**6** 

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## **Testing conditions** 

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**----- Start of picture text -----**<br>
V GE (t) I,V<br>90%  V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10%  V GE t a b<br>I C (t) Q a Q b<br>dI<br>90%  I C 90%  I C<br>10%  I C 10%  I C t Figure C.  Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>Figure D.<br>10%  V GE<br>t<br>I C (t)<br>CC<br>2%  I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**Figure 2** 

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**Revision history** 

## **Revision history** 

|**Revision history**|||
|---|---|---|
|**Document revision**|**Date of release**|**Description of changes**|
|1.00|2021-09-28|Final datasheet|
|1.01|2021-10-14|Change of Potential Applications|



Datasheet 

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## **Trademarks** 

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**Edition 2021-10-14 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** 

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Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.

Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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