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IKFW90N60EH3XKSA1
IGBT, 77 A, 1.85 V, 178 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 178W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 77A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.25 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
IKFW90N60EH3
## TRENCHSTOP[TM]
## **Features:**
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CE(sat)<br>¢ Short circuit withstand time 5us at T vj =<br>¢ Positive temperature coefficient in V CE(sat)<br>« Low EMI<br>* Very soft, fast recovery anti-parallel diode<br>* Maximum junction temperature 175°C<br>*2500V RMS — electrical isolation, 50/60 Hz, t<br>**----- End of picture text -----**<br>
http://www.infineon.com/igbt
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C<br>G<br>E<br>of 7<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKFW90N60EH3|600V|75A|1.85V|175°C|K90DEH3|PG-TO247-3-AI|
Datasheet www.infineon.com
2017-09-21
IKFW90N60EH3
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKFW90N60EH3
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C<br>_T_h=65°C|_I_C||77.0<br>62.0<br>95.01)|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||300.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||300.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°Cvaluelimitedbybondwire<br>_T_h=65°C|_I_F||80.0<br>69.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||300.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||178.0<br>130.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|0.71|0.84|K/W|
|Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.00|1.10|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
> 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier insulator
> 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
> 3) At force on body F = 500N, Ta = 25ºC
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.85<br>2.25|2.30<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.40|1.75<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.20mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1200|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|34.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4726|-|pF|
|Output capacitance|_C_oes||-|215|-||
|Reverse transfer capacitance|_C_res||-|127|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=75.0A,<br>_V_GE=15V|-|440.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|685|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.0Ω,_R_G(off)=5.0Ω,<br>_L_σ=75nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|32|-|ns|
|Rise time|_t_r||-|45|-|ns|
|Turn-off delaytime|_t_d(off)||-|210|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|2.65|-|mJ|
|Turn-off energy|_E_off||-|1.30|-|mJ|
|Total switchingenergy|_E_ts||-|3.95|-|mJ|
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## TRENCHSTOP[TM] �Advanced�Isolation
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1000A/µs|-|107|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.94|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|23.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1687|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.0Ω,_R_G(off)=5.0Ω,<br>_L_σ=75nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns|
|Rise time|_t_r||-|43|-|ns|
|Turn-off delaytime|_t_d(off)||-|290|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|4.20|-|mJ|
|Turn-off energy|_E_off||-|1.90|-|mJ|
|Total switchingenergy|_E_ts||-|6.10|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1000A/µs|-|170|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|4.93|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|39.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1704|-|A/µs|
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IKFW90N60EH3
## TRENCHSTOP[TM]
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100<br>not for linear use<br>2— FA [(f] [C]<br>2 10 A F Tomcil<br>5 ECHR ETI PAHT<br>fg<br>1<br>Be<br>a ee<br>Fon<br>ri<br>0.1 i i m<br>1 10 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area<br>( D =0, T h =25°C, T j 175°C, V GE =15V, t p ≤ 1µs)<br>I C<br>**----- End of picture text -----**<br>
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180<br>160<br>NLL LL<br>140 PNY<br>ee 120 |oA)<br>| of<br>2& 100 |AE|<br>80<br>\<br>60<br>TR<br>4020 Po) ff tL YY<br>= 0 LEE EN<br>25 50 75 100 125 150 175<br>T h , HEATSINK TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br>
> Figure 2. Power **temperature** ( _T_ j ≤ 175°C)
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90 TO247 Advanced Isolation TO 300 /<br>TO247 with insulator film (using same chip)<br>80 270 VGE=20V<br>Ed e/a<br>17V<br>240<br>70 |<br>15V<br>z NE z oee/a<br>210<br>ePXOo 60 13V<br>de PSN<br>180 11V<br>PON<br>50<br>9V<br>150<br>7V<br>sp 40 EP Sy<br>fo KX 8 OV<br>120 5V<br>N<br>30<br>DONATE POR<br>90<br>STEEN<br>20<br>60<br>Vf SI<br>10 30<br>po a a<br>0 N Y 0 LE A k<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T h , HEATSINK TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of heatsink Figure 4. Typical output characteristic<br>temperature ( T j=25°C)<br>( V GE ≥ 15V, T j ≤ 175°C, insulator film: 152yum,<br>1.3W/mK)<br>I C I C<br>**----- End of picture text -----**<br>
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IKFW90N60EH3
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
300 300<br>Tvj = 25°C<br>270 Ae 270 Tvj = 175°C eee<br>VGE=20V / == f ;<br>240 17V | A 240 /<br>e/a eee e e ee<br>15V<br>210 SNL 210<br>z 13V Z| 2 | p<br>d SOX YL z<br>a 180 11V SQW}— NS// a6 180 fT<br>. 9V SY [i<br>150 150<br>fs(e) 7V \ WYMN VA7Z| .3 [| /<br>:.: 120 5V STR\\ IKEZ 18.: 120<br>Fe} 90 Wy Fe} 90<br>Se) M4 {NO<br>OK ff<br>60 60<br>a YX<br>30 30<br>ANNE ee [eee]<br>(AT<br>0 0<br>N I OL<br>0 1 2 3 4 5 6 4 6 8 10 12 14 16<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ j=175°C)
Figure 6. Typical ( _V_ CE=20V)
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4.0 — 1000 [[_<br>IC = 37.5A<br>IC = 75A a<br>IC = 150A<br>= | a<br>= 3.5 — eeeee<br>td(off)<br>tf<br>td(on)<br>3.0 100 tr<br>q - =< £ E e<br>(op) oor ip) a<br>wv 7 uw a a<br>7 Pood = a e c<br>- wet - po eee<br>2.5<br>E o Q eS rcaceen eee es<br>u ee ee eeee<br>a 2.0 _— 10 7<br>ra 2) a a "SO<br>3 ° a 6 ee<br>A<br>re) a ee eeee<br>1.5 pf ae<br>1.0 1<br>25 50 75 100 125 150 175 0 30 60 90 120 150<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
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**----- Start of picture text -----**<br>
T j =175°C, V CE =400V, V GE=0/15V,<br>**----- End of picture text -----**<br>
_R_ G=5
Datasheet
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2017-09-21
## IKFW90N60EH3
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
td(off)<br>tf is<br>td(on) a<br>1000 | tr a ae<br>a ea a ee ee ee<br>Yn onus<br>= 100 a ae |<br>Qeae Fasaeeeheaes<br>5 a a ee ee ee<br>gfe<br>10 =SSSd Pir —_—_—§_ ]<br>a<br>> J<br>1<br>0 5 10 15 20 25 30 35 40<br>R G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of<br>resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=0/15V,<br>I C =75A, test circuit in Fig. E)<br>t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1000<br>i td(off) a a a<br>| tf a ee ee<br>I td(on) a ee e e<br>I tr a e<br>aT<br>o s<br>100<br>ip) a eeeees ee<br>Prssseenasspessssesssedescsoserensbessssonsnsposesanesedecseneens<br>og L t<br>10<br>apoee es<br>a es<br>ee ee ee ee ee<br>1<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>Figure 10. Typical switching times as a function of<br>junction temperature<br>(ind. load, V CE =400V, V GE =0/15V, I C=75A,<br>r G=5 , test circuit in Fig. E)<br>t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
6 | 14<br>typ. Eoff<br>min. Eon<br>= ~~ max. Ets oa<br>wi hoe 12 /<br>~¢ SA 2 /<br>F 5 /™ *s = /<br>10<br>| >_< SSN 8 /<br>2 ~_| SS, aa) / Y/Y<br>8<br>EoeWi 4 sw rw ~ Iw Wwa) 6 7 /4 Wz7<br>EF ~ Zz a 7<br>in= ~ ~ LO / 7<br>4<br>3<br>FO ~ b. ,/4 —<br>2 Z aA —|— |<br>a<br>2 0<br>et | te aanv es<br>25 50 75 100 125 150 0 30 60 90 120 150<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction junction temperature function of collector current<br>( I C=1.2mA)=1.2mA) (ind. load, T j =175°C, V CE =400V, V GE=0/15V,<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction junction ( _I_ C=1.2mA)=1.2mA)
_R_ G=5
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Datasheet
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## IKFW90N60EH3
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
21 7<br>Eoff 7 Eoff<br>EEonts ¢7/ EEonts<br>18 6<br>_ f _ a<br>mp) 4 mp) -?<br>& / & rae<br>(op)Ww 15 7 / ”Ww 5 - id<br>7) / 7)<br>io) 7 io)<br>fe) y fe)<br>v4—!> 12 ’ a 7 | >9 4 L. _ -<br>Ww “ , a Ww _-<br>a va a --<br>9 3<br>: 6 oa¢ “| 8 2<br>: oar ppp<br>3 am 1 oe a<br>0 0<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=0/15V, (indload, V CE =400V, V GE =0/15V, I C=75A,<br>I C =75A, test circuit in Fig. E) R G=5 , test circuit in Fig. E)<br>9 16<br>Eoff V CC<br>Eon Yx — V CC = =120V /<br>8 Ets 14 —- =480V /<br>ry 7 “<br>£& Y S 12 /<br>2a<br>a 6 “ Z| Q /<br>10<br>g “ eos /<br>5<br>Wi a y E 8<br>z lo? Pa ke<br>4<br>LU y, Ss<br>zZ “ 7 uw 6<br>5 3 Ot 2 Fe<br>4<br>B®“ 2 7 _ sd<br>2<br>1<br>eel ee<br>0 0<br>200 250 300 350 400 450 500 0 100 200 300 400 500<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=75A)<br>(ind. load, T j =175°C, V GE =0/15V, I C=75A,<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
R G=5<br>**----- End of picture text -----**<br>
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IKFW90N60EH3
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
Cies<br>1E+4 Coes<br>Cres<br>e s e<br>a<br>eeee<br>gg<br>1000<br>a es ee<br>3 ET<br><xE aNe ee<br>Na<br>o p\ Ne<br>ee eadee ee<br>100 a<br>a<br>a ee<br>a es<br>ee<br>10<br>0 10 20 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of<br>C<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1400<br>1200<br>2<br>a<br>1000<br>| [O]<br>Oo<br>800<br>G<br>xo<br>600<br>Kk|<br>G<br>ke 400<br>rs<br>I<br> )<br>200<br>0<br>10 12 14 16 18 20<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC)<br>**----- End of picture text -----**<br>
Figure 18.
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( V GE =0V, f=1MHz) ( V CE 400V, start at T j=25°C)<br>14 1 a YT a Tri | Tt Ti Ti TTT eet<br>HHHCeCeat CT<br>12 Ff |<br>Tv ff ff fl} yy | s eer ze<br>D = 0.5<br>ENCCOCCLO S EE a coAM<br>0.2<br>F «Ie<br>O PPXETEE III 0.1<br>Zz 10 N Lufa 0.1 || eeMattaoy tT Tt TTT<br>0.05<br><D N\ jalS seemi Ee 28AeA|<br>; 7 ee 0.02<br>E em 0.01<br>= 8 Pt ff |X] Ly | z TIA emer TT<br>single pulse<br>eto NN a Hh} A Ha<br>Lip<br>rs) dL NN ee<br>e TTT OT<br>6 0.01<br>° » NX 7 Bn 240 0<br>e | | | | | | | | | \) 2 RHI RVRR ESSE Seno<br>oO= a PTTIM ATT TTT TT TT —- til){Hill<br>4 PT ty yy) ddd F Siti ral ar aii pag ep<br>|<br>Se) i: ERE 1 2 nny 3 4 5 6 7<br>ri[K/W]: 1.5E-3 0.051315 0.060335 0.091839 0.31119 0.30371 0.02354<br>τ i[s]: 1.9E-5 2.5E-4 2.1E-3 0.019729 0.207847 0.931092 15.99232<br>2 0.001<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal impedance as a<br>gate-emitter voltage function of pulse width<br>( V CE 400V, start at T j 150°C) ( D = t p/T)<br>t SC h)th(j-<br>Z<br>**----- End of picture text -----**<br>
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IKFW90N60EH3
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
400<br>Tvj = 25°C, IF = 75A<br>1 Titi 3 360 ~l eEo Tvj = 175°C, IF = 75A aT<br>_ Sees > =<br>= EH Se<br>Z Smee ewe ee<br>320<br>D = 0.5<br>Ww egy _ X<br>A 0.2 =<br>280<br>Z2 EMMeeecera’eetal 0.1 ZT NT | | |<br>eR— 0.1 |A gl i me 0.05 | 0|| aag 240 .<br><xa mae aliSite Ae 0.02 Pi LU ~N<br>S ee | 0.01 CT ><br>200<br>ow erm rt AU eeFree CM Tn = G Nee<br>single pulse<br>ui PUTT TTT TTI eet TUT Ht ne) .<br>F SY ti 160 aN<br>Ne ceae)/ec) NN >=<br>7)MT 0.01 CL [T)t ACU LL LLL &> 120 EKm™<br>zZ Fret rat HR Re Ty el<br>< PT TO Te ati UTI) ia<br>iw OFA -- fi] ~<br>F- APAI TCI AT TTI TT) GH cA G ComtelRe + I_|ll 80 a<br>CULT ATM TV TT Tm To<br>| WTA i: 1 2 CTC 3 4 CU 5 6 40<br>ri[K/W]: 0.023958 0.20273 0.18183 0.35024 0.31834 0.023474<br>τ i[s]: 3.2E-4 2.2E-3 0.016794 0.189957 0.886519 15.81528<br>0.001 0<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 400 500 600 700 800 900 1000 1100 1200<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>h)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 21.
( _D_ = _t_ p/T)
Figure 22.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
6 45<br>Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A Tvj = 175°C, IF = 75A<br>EO<br>Sa 40 se<br>5<br>gaz 35<br>ae 5 4<br>q<br>a4 Ww 7<br>< 4 or 30<br>)<br>uwzxin 25 c ea<br>3<br>2 S y 4<br>20<br>e) S = an<br>or ow<br>ey 2 : 15 ae<br>' D a<br>10<br>uw 1 TTT pitttT<br>; mf Rae<br>5<br>0 0<br>400 500 600 700 800 900 1000 1100 1200 400 500 600 700 800 900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 23.
( _V_ R=400V)
Figure 24.
( _V_ R=400V)
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Datasheet
2017-09-21
IKFW90N60EH3
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
0 ss 300 Le ! /<br>Tvj = 25°C, IF = 75A Tvj = 25°C<br>Tvj = 175°C, IF = 75A Tvj = 175°C /<br>-300 SE 270<br>Te J | UE<br>7) SY /<br>240<br>z -600 “NS<br>e) <x 210<br>e (PEN EEE s E E<br>—! -900<br>LL:z °\ etoWWZ 180 Of<br>5Oo -1200 PPT LIN ‘ EL te5 //<br>Kk 150<br><x Q<br>a -1500 om<br>pi UNS 120 a ae<br>\ oO<br>oOw -1800 LLa) ae<br>Qa . 90 J<br>Pfa -2100 NY:<br>° -2400 PoP NS\ Mh 6030 OFa<br>-2700 0<br>400 500 600 700 800 900 1000 1100 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
( _V_ R=400V)
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2.50<br>IF = 37.5A<br>IF = 75A<br>2.25 IF = 150A<br>2.00<br>Ww<br>4 1.75<br>ke<br>I<br>><br>Q 1.50<br>aa<br><x<br>1.25<br>1.00<br>ce<br>0.75<br>0.50<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
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Datasheet
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**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Advanced�Isolation
## **PG-TO247-3-AI (PGHSIP2473)**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A - 5.18 DOCUMENT NO.<br>A1 4.70 4.90 Z8B00186434<br>A2 2.23 2.59 REVISION<br>A3 0.20 0.28 02<br>b 1.10 1.30<br>c 0.50 0.70 SCALE 3:1<br>D 22.20 22.40 0 1 2 3 4 5 6 7 8mm<br>D1 16.96 17.16<br>E 15.70 15.90<br>E1 13.68 13.88 EUROPEAN PROJECTION<br>e 5.44<br>L 18.31 18.91<br>L1 2.76 2.96<br>øP 3.50 3.70<br>øP1 5.70 5.90 ISSUE DATE<br>Q 5.96 6.36 05.06.2018<br>**----- End of picture text -----**<br>
Note: For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC6006826 and IEC60068227). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of <20µm per 100mm and roughness of <10µm.
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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IKFW90N60EH3
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Revision�History**
IKFW90N60EH3
## **Revision:�2017-09-21,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-09-21|Final data sheet|
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V�2.1 2017-09-21
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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