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IKFW75N65ES5XKSA1
IGBT, 650 V, 80 A, 148W, HSIP247, 1.35 Vsat
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 148W
- Transistor Mounting: Through Hole
- Transistor Case Style: HSIP247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.83 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IKFW75N65ES5 ## TRENCHSTOP[TM] ## TRENCHSTOP[TM] **==> picture [480 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>« Very Low V CEsat , 1.35V at nominal current<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>* 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with full rated RAPID 1 fast antiparallel diode<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>« Resonant converters = Cc «<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKFW75N65ES5|650V|60A|1.35V|175°C|K75EES5|PG-HSIP247-3-2| Datasheet www.infineon.com 2020-07-27 IKFW75N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 2 V�2.1 2020-07-27 Datasheet IKFW75N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°Cvaluelimitedbybondwire<br>_T_h=65°C<br>_T_h=65°C|_I_C||80.0<br>75.0<br>109.01)|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||240.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||240.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°Cvaluelimitedbybondwire<br>_T_h=65°C|_I_F||80.0<br>74.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||240.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||148.0<br>109.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| |IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|0.86|1.01|K/W| |Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|0.97|1.14|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W| > 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier insulator > 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing. > 3) At force on body F = 500N, Ta = 25ºC 3 V�2.1 2020-07-27 Datasheet IKFW75N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=60.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.35<br>1.60|1.70<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=60.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.60mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2400|50<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=60.0A|-|76.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|3600|-|pF| |Output capacitance|_C_oes||-|105|-|| |Reverse transfer capacitance|_C_res||-|13|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=60.0A,<br>_V_GE=15V|-|144.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=60.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns| |Rise time|_t_r||-|32|-|ns| |Turn-off delaytime|_t_d(off)||-|152|-|ns| |Fall time|_t_f||-|41|-|ns| |Turn-on energy|_E_on||-|1.48|-|mJ| |Turn-off energy|_E_off||-|0.66|-|mJ| |Total switchingenergy|_E_ts||-|2.14|-|mJ| V�2.1 2020-07-27 Datasheet 4 IKFW75N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=60.0A,<br>_di_F_/dt_=1000A/µs|-|71|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.36|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|28.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1544|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=60.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns| |Rise time|_t_r||-|31|-|ns| |Turn-off delaytime|_t_d(off)||-|181|-|ns| |Fall time|_t_f||-|56|-|ns| |Turn-on energy|_E_on||-|1.96|-|mJ| |Turn-off energy|_E_off||-|1.02|-|mJ| |Total switchingenergy|_E_ts||-|2.98|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=60.0A,<br>_di_F_/dt_=1000A/µs|-|112|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|3.24|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|41.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1848|-|A/µs| V�2.1 2020-07-27 Datasheet 5 IKFW75N65ES5 ## ~~—~~ TRENCHSTOP[TM] **==> picture [474 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 150 90<br>135 ALLLLLI 80 LLILLI.<br>120 NN 70<br>105<br>se) \ fe 60 P K<br>90<br>gf \ | |G ee<br>50<br>etoooN 75 43 ~<br>40<br>Pp oN EN<br>60<br>30<br>BN 45 ya FA<br>20<br>30<br>Ne<br>15 ee 10 ee eee<br>ee<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T h , HEATSINK TEMPERATURE [°C] T h , HEATSINK TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of heatsink Figure 2. Collector current as a function of heatsink<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ 15V, T j ≤ 175°C)<br>225 225<br>200 VGE = 20V 200 VGE = 20V<br>18V 18V<br>ae Py<br>175 175<br>15V 15V<br>e 150 12V ae aoe 150 12V NLL<br>10V 10V<br>e 125 | Dfa7Ul le 125 LR| //QRZ<br>8V 8V<br>s 100 | oo 7V ts 100 LORY 7V 2<br>6V 6V<br>75 5V 75 5V<br>50 50<br>25 25<br>fn) \Gnneneee) ===<br>aee ANN<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br> 6 Datasheet 2020-07-27 IKFW75N65ES5 ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 225 3.0<br>Tvj = 25°C IC = 30A<br>Tvj = 175°C IC = 60A<br>200 l IC = 120A<br>a =<br>2.5<br>z<br>175 fg Oo<br>Ee<br>z Pa<br>Z 150 > 2.0<br>Wwia F7)<br>Ooa) 125 ! EF<br>ow / S 1.5<br>eS 100 ! in<br>4 FE<br>: 75 | ot TR :5 1.0 fF.fT<br>(e)<br>50<br>0.5<br>25<br>0 0.0<br>0 2 4 6 8 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> Figure 5. Typical ( _V_ CE=20V) Figure 6. Typical a function ( _V_ GE=15V) **==> picture [471 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a SS SS SS 1000 a a<br>|I1 ttd(off)f aaeS ee ee ee ee |i| ttd(off)f aarr eeeeeeeee<br>td(on) td(on)<br>tr tr<br>| FE fs a | = | pee 2<br>ps t | Po<br>100 100<br>| [trees LO<br>ip) Pee ee PT a<br>uw a et ee ee eee ip) a es ee ee<br>=- aa aa Dea cetee Pe Saee eee = eaeal eseeeee<br>Q a eea eeee ee poa a| eee |<br>oaE eace eeE<br>ete | ET<br>2) 10 a Sa 2) 10 a<br>- a, - a<br>a a es<br>ee a<br>a a ee eee a eeee<br>a a ee<br>Po | te tt tt re a ee ee ee<br>1 1<br>0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=8 , test circuit in Fig. E) I C =60A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br> Datasheet 7 2020-07-27 IKFW75N65ES5 ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 LS 6 4<br>Es Rs<br>| 1 td(off) a a ee a ee ee typ.<br>I tf min.<br>td(on) max.<br>I a eee e eeeee eee _ = |<br>tr 5<br><x<br>a :<br>eee Kk<br>iF 100 a es Q 4<br>ip) a i |<br>im a ee ee (e) se<br>-= aa aee aee ee eee oO ——— Aars<br>3<br>OQ kee eee ee ee Wy- —<br><= bessenesseapernertennedunsesttes tfetttesseepessesee enstesmseeee| OE — ——<br>a ee ee ee ee ee ~~ Ne<br>O Ww ~~<br>E fF ~<br>2)7 10 po a eS WwWw 2 =~ ~ ~<br>ee<br>a ee se x<br>a eseo)<br>1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 9. **==> picture [166 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> (ind. load, V CE =400V, V GE =0/15V, I C=60A,<br>R G=8 , test circuit in Fig. E)<br>**----- End of picture text -----**<br> Figure 10. ( _I_ C=0.6mA) **==> picture [471 x 331] intentionally omitted <==** **----- Start of picture text -----**<br> 15 6<br>Eoff Eoff<br>Eon Eon<br>Ets 4 Ets<br>5<br>ay 12 5 a<br>(op) / op) Pra<br>(op)a) // io)a) 4 7 Pa<br>o 9 / o peat<br>> 7 > Pea -<br>2 / 2 a“ -<br>3<br>u / “yw : =<br>Ww f 7 Ww _- -<br>2 6 a 2 --7<br>OI:y;ra Yo Y OIr 2 oT<br>3<br>1<br>7 a a<br>7 sa<br>0 0<br>0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=8 , test circuit in Fig. E) I C =60A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br> 8 Datasheet 2020-07-27 IKFW75N65ES5 ## TRENCHSTOP[TM] **==> picture [524 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0 4.0<br>Eoff Eoff<br>Eon Eon<br>3.5 | Ets 3.5 Ets<br>ow<br>ys . 5 “<br>3.0 3.0<br>Lu -- Lu ¢<br>7p) “7 7p) “<br>ip) o 2.5 =om (dp) 2.5 ? 7<br>>oO -- > “<br>2.0 2.0<br>ff --" ffoO ‘ “ aa<br>oO -- o) - 7<br>Zz 1.5 -- Zz 1.5 a<br>.<br>oo<br>E<br>E “oO<br>i 1.0 eet 1.0 ee<br>0.5 0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(indload, V CE =400V, V GE =0/15V, I C=60A, (ind. load, T j =150°C, V GE =0/15V, I C=60A,<br>R G=8 , test circuit in Fig. E) R G=8 , test circuit in Fig. E)<br>16 P|<br>V CC Cies<br>—- V CC =520V ‘ 1E+4 Coes<br>14 -— " H Cres _<br>Sa ee<br>7 | aa ee<br>= 12 / a<br>1S) —<br>10<br>Lu 1000 a<br>i 8 / / < aes<br>= / eS) [a<br>iiWW 6 -—_—* ne< |}<br>Ke .<br><x<br>100<br>4 ss<br>a<br>a<br>2<br>0 10<br>0 20 40 60 80 100 120 140 160 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=60A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V GE<br>**----- End of picture text -----**<br> 9 Datasheet 2020-07-27 IKFW75N65ES5 ## TRENCHSTOP[TM] **==> picture [477 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>| al<br>a Sti ce eee eee eee cet:| 1 nA<br>= TT INS BAAnTTTT Ty = FETE C PTCLeech<br>= COCA Ce D = 0.5<br>mw Df TIC TCT = IRR SeaaH|<br>0.2<br>g LL it ae 3 A<br>Lua 0.1 Liz:Hf,Aji etll D = 0.5 2a rTUICFmTea| Vi AYA CCI 0.1 Tl<br>as= eeSe= AForresee ea 0.2 eeioe | LLae 0.1 a aa a o/A| 0.05<br>Ceet— 0.1 OO = meinem7 AA a 0.02 tn a<br>z it 0 Vay B at Eo<br>0.05 0.01<br>= aAe Seiiassaaiice i datilissai aaah atatl<br>0.02 single pulse<br>uw= 2FTI aA 0.01 We GmCCAM TTT opermtTn rn il<br>F wieAti il = a, J pe We<br>single pulse<br>wwii ll F SS ET Tet TT<br>0.01<br>get Ac<br>0.01<br>2 A N A a<br>feF EHHor AC CE ECL “Hil & peStet StedAL ee UI fl<br>. 0 A 1) a am a A i<br>} Cy=1,/R, Co=te/Ro . | L 7 | Cy=1,/R, Co=te/Ro Il<br>a eee cer teen||l| OCAAl 1ACITt|<br>UAT TO<br>i: 1 2 I 3 VT) 4 NT 5 PT 6 TT 7 BAA i: 1 2 3 4 5 6 7<br>ri[K/W]: 3.4E-3 0.110355 0.131565 0.188265 0.321405 0.19467 0.016485 ri[K/W]: 5.3E-3 0.134715 0.16149 0.20202 0.32256 0.194565 0.01649<br>τ i[s]: 2.0E-5 2.9E-4 2.8E-3 0.023721 0.289111 1.294166 18.68143 τ i[s]: 2.5E-5 2.9E-4 2.8E-3 0.0233 0.28843 1.29282 18.68457<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>h)th(j- h)th(j-<br>Z Z<br>**----- End of picture text -----**<br> Figure 17. ( _D_ = _t_ p/T) Figure 18. Diode function ( _D_ = _t_ p/T) **==> picture [490 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 160 4.5<br>Tvj = 25°C, IF = 60A Tvj = 25°C, IF = 60A<br>Tvj = 175°C, IF = 60A Tvj = 175°C, IF = 60A<br>jE 4.0<br>140<br>| -<br>3.5<br>120<br>-ef Ne.: 3.0 Leer<br>> 100 O<br>2.5<br>80<br>2.0<br>60<br>f ame Ww 1.5<br>™) 2 |<br>apL >Ww |<br>40<br>uw eee<br>1.0<br>LEE<br>20<br>0.5<br>0 0.0<br>700 900 1100 1300 1500 1700 700 900 1100 1300 1500 1700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/s]<br>Figure 19. Typical reverse recovery time as a function Figure 20. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> 10 Datasheet 2020-07-27 IKFW75N65ES5 ## TRENCHSTOP[TM] **==> picture [476 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 60 0<br>Tvj = 25°C, IF = 60A Tvj = 25°C, IF = 60A<br>Tvj = 150°C, IF = 60A Tvj = 175°C, IF = 60A<br>-500<br>50 a<br><x - =,<br>“ -1000<br>5 -<br>Lu a Le@)<br>wa 40 a ~~<br>=) x -1500 KON<br>S)> - “ ir.Le XX N ><br>30 -2000<br>: a : Ps<br>ef 5 Nae<br>y x<br>Ww wi: -2500 S<br>i 20 Ww<br>fi: O:Q -3000 PT EE INA\<br>10<br>, ; -3500 PEt Et | de<br>0 -4000<br>700 900 1100 1300 1500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 21. Typical function ( _V_ R=400V) Figure 22. ( _V_ R=400V) **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 225 2.25<br>Tvj = 25°C IF = 30A<br>Tvj = 175°C IF = 60A<br>200 = Lt / IF = 120A<br>2.00<br>/<br>175<br>/<br>£ =. 1.75<br>150<br>KE ‘ Wu<br>si g<br>igD 125 ae) 1.50<br>s) ><br>Q<br>100<br><x = 1.25 —__|<br>ae ee<br>oO oO<br>75<br>1.00<br>50<br>0.75<br>25<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br> Figure 23. Figure 24. 11 Datasheet 2020-07-27 IKFW75N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **PG-HSIP247-3-2** **==> picture [431 x 640] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS MILLIMETERS<br>DIMENSIONS DIMENSIONS<br>MIN. MAX. MIN. MAX.<br>A - 5.18 e 5.44<br>A1 4.70 4.90 E 15.70 15.90<br>A2 2.16 2.66 E1 13.68 13.88<br>DOCUMENT NO.<br>A3 0.20 0.28 E2 (6.00)<br>Z8B00195711<br>A4 1.30 1.50 E3 3.24 3.44<br>A5 0.31 0.51 E4 4.39 4.59 REVISION<br>A6 1.70 1.90 E5 (1.45) 01<br>A7 (0.25) E6 0.76 0.96<br>b 1.10 1.30 L 18.01 18.21 SCALE 3:1<br>b1 (2.88) L1 2.26 2.46 0 1 2 3 4 5 6 7 8mm<br>b2 (1.60) L2 1.50 1.70<br>b3 - 0.15 P 3.50 3.70<br>c 0.50 0.70 P1 5.70 5.90 EUROPEAN PROJECTION<br>D 22.70 22.90 Q 6.06 6.26<br>D1 16.96 17.16<br>D2 2.34 2.54<br>D3 - 0.30<br>ISSUE DATE<br>D4 4.35 4.55<br>28.06.2019<br>D5 19 70 19 90<br>**----- End of picture text -----**<br> 12 V�2.1 2020-07-27 Datasheet IKFW75N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 13 V�2.1 2020-07-27 Datasheet IKFW75N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **Revision�History** IKFW75N65ES5 ## **Revision:�2020-07-27,�Rev.�2.1** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2020-07-27|Final Data Sheet| 14 V�2.1 2020-07-27 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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