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IKFW75N65EH5XKSA1
IGBT, 650 V, 80 A, 148W, HSIP247, 1.65 Vsat
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 148W
- Transistor Mounting: Through Hole
- Transistor Case Style: HSIP247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.63 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKFW75N65EH5
## TRENCHSTOP[TM]
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High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1<br>fast and soft antiparallel diode<br>Features and Benefits: C<br>TRENCHSTOP [TM] 5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>* 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>* Very soft, fast recovery antiparallel diode<br>¢ Maximum junction temperature 175°C<br>*2500V RMS electrical isolation, 50/60Hz, t=1min<br>* 100% tested isolated mounting surface<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models: Sf<br>http://www.infineon.com/igbt/<br>Potential Applications: =F 2<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKFW75N65EH5|650V|60A|1.65V|175°C|K75EEH5|PG-HSIP247-3-2|
Datasheet www.infineon.com
2020-07-24
IKFW75N65EH5
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Datasheet
IKFW75N65EH5
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°Cvaluelimitedbybondwire<br>_T_h=65°C<br>_T_h=65°C|_I_C||80.0<br>66.0<br>104.01)|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||240.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||240.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°Cvaluelimitedbybondwire<br>_T_h=65°C|_I_F||80.0<br>74.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||240.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||148.0<br>109.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|0.86|1.01|K/W|
|Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|0.97|1.14|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
> 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier insulator
> 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
> 3) At force on body F = 500N, Ta = 25ºC
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IKFW75N65EH5
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=60.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.95|2.10<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=60.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.60mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>2000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=60.0A|-|72.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|3600|-|pF|
|Output capacitance|_C_oes||-|105|-||
|Reverse transfer capacitance|_C_res||-|13|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=60.0A,<br>_V_GE=15V|-|144.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=60.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|35|-|ns|
|Turn-off delaytime|_t_d(off)||-|206|-|ns|
|Fall time|_t_f||-|42|-|ns|
|Turn-on energy|_E_on||-|1.80|-|mJ|
|Turn-off energy|_E_off||-|0.60|-|mJ|
|Total switchingenergy|_E_ts||-|2.40|-|mJ|
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## TRENCHSTOP[TM] �5�Advanced�Isolation
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=60.0A,<br>_di_F_/dt_=1000A/µs|-|75|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.40|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|23.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1150|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=60.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|29|-|ns|
|Rise time|_t_r||-|36|-|ns|
|Turn-off delaytime|_t_d(off)||-|228|-|ns|
|Fall time|_t_f||-|36|-|ns|
|Turn-on energy|_E_on||-|2.40|-|mJ|
|Turn-off energy|_E_off||-|0.72|-|mJ|
|Total switchingenergy|_E_ts||-|3.12|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=60.0A,<br>_di_F_/dt_=1000A/µs|-|118|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|3.40|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|36.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1700|-|A/µs|
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IKFW75N65EH5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
150 80<br>70<br>125<br>60<br>~tLiXN |<br>100<br>50<br>: et [IN]<br>=)<br>a<br>75 40<br>;Q efO [UN]<br>oN<br>30<br>ef<br>50<br>PN<br>20<br>25<br>PT<br>10<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T h , HEATSINK TEMPERATURE [°C] T h , HEATSINK TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of heatsink Figure 2. Collector current as a function of heatsink<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ 15V, T j ≤ 175°C)<br>180 180<br>160 VGE = 20V 160 VGE = 20V<br>18V 18V<br>a fAeeZO f —ff/f//<br>140 140<br>15V | 15V /<br>: 120 12V Wf 120 12V<br>a= 10V | 2 10V f/f<br>100 100<br>8V 8V<br>ee oe) 7a<br>7V 7V<br>80 80<br>6V 6V<br>60 5V 60 5V<br>40 40<br>20 20<br>PK]eee| |feeee<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ j=25°C)
Figure 4. Typical ( _T_ j=175°C)
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IKFW75N65EH5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
180 3.5<br>Tvj = 25°C IC = 30A<br>Tvj = 175°C IC = 60A<br>160 IC = 120A<br>Ee) ff = |<br>3.0<br>140 / / Zzje) a<br>= a<br>Z 120 =) 2.5<br>uw F<br>a a a u--<br>a) 100 Wi<br>wv E 2.0<br>80<br>fg a _--77<br>o ac<br>60 1.5<br>je O<br>uw ee ee ee<br>oO<br>40<br>1.0<br>20<br>0 0.5<br>3 4 5 6 7 8 9 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
Figure 6.
( _V_ GE=15V)
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**----- Start of picture text -----**<br>
1000 ttd(off)f ttd(off)f a<br>| td(on) a es es es td(on)<br>_ tr ————— 1000 tr<br>1 en — ———— |r a | a<br>a e s<br>e e eeee<br>z a a — > a eeee<br>Py cal ee<br>uw 100 ee ee eee ee Lu — _—<br>100<br>Zz ¥ Zz eee<br>=8 eea ee ee el<br>fee 8 pe<br>10<br>ee 10 ee<br>a a [_|]<br>a ee ee ee a a a<br>a oo<br>ee ee ee eee ee<br>1 1<br>0 30 60 90 120 150 180 10 20 30 40 50 60 70 80 90<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=12 , test circuit in Fig. E) I C =60A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
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IKFW75N65EH5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1000 6.0<br>EsRs 4<br>| td(off) ee ee ee typ.<br>I tf a ee ee ee _ 5.5 min.<br>I td(on) a ee max.<br>tr<br>| ee<br>po 5.0 Td<br>a Oo<br>2 ——————— EEE eee =<br>1<br>4.5<br>100<br>ip) a i ~<br>im po (e) 4.0 ~ ~<br>= a —_ SL<br>- pt Ww SAL<br>3.5<br>OQ<= bow [nerbrenene] bese peena ae errr) Oe — _<br>eee - ee ee<br>3.0<br>| | é — “=~ > ~<br>10<br>7 aa es Ww 2.5 =~ ~ NX<br>a a ~<br>aeeee eo) 2.0 eeee<<br>1.5<br>1 1.0<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
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**----- Start of picture text -----**<br>
(ind. load, V CE =400V, V GE =0/15V, I C=60A,<br>r G=12 , test circuit in Fig. E)<br>**----- End of picture text -----**<br>
Figure 10.
( _I_ C=0.6mA)
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**----- Start of picture text -----**<br>
14 9<br>Eoff /4 Eoff<br>Eon Eon<br>Ets 4 8 Ets<br>12 / “<br>s& / / Jz= 7 7 “<br>Ww 10 / wi v<br>ep)op) /cA (dp)op) 6 Fa ?<br>9/<br>8<br>5“| 3 5 :<br>4 / 4 “ -<br>ra / 7 ra “ -<br>uw / 7 uw 4 ¢ a7<br>Z 6 ‘ oO<br>3 7 Zz 3 4° oo<br>FE 4 “7 5 fe S<br>= f 7 J | E 77 SS<br>A 7 no 2 _—!<br>n y 7 WA = 7 —<br>“7 a<br>2<br>Ja a 1 peer<br>—<br>2 lL L rama<br>0 0<br>0 30 60 90 120 150 180 10 20 30 40 50 60 70 80 90<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=12 , test circuit in Fig. E) I C =60A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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IKFW75N65EH5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
4.0 4.0<br>Eoff Eoff<br>Eon Eon ov<br>3.5 | Ets 3.5 Ets a“<br>_ “<br>> -"" > a 7<br>E<br>3.0 3.0<br>D<br>fo)_I 2.5 cae fo)2 2.5 c “ 77<br>> _- _— —!> 7” 7 a<br>na na 7<br>Ww 2.0 —_ Ww 2.0 <<br>Z 1.5 zZ 1.5 r |““ L-a<br>L L<br>E Ee 7<br>1.0 1.0<br>rn ff<br>0.5 0.5<br>0.0 0.0<br>Pity ey Eee<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(indload, V CE =400V, V GE =0/15V, I C=60A, (ind. load, T j =150°C, V GE =0/15V, I C=60A,<br>R G=12 , test circuit in Fig. E) R G=12 , test circuit in Fig. E)<br>16 Lt<br>V CC Cies<br>_—— V CC = 520V / 1E+4 H Coes ———<br>14 { ff / aALKJ C . res aa ee | | | | |<br>a<br>12<br>a) / / _ 1000 hey———| |<br>fe— 10 _— aa a<br>a / |<br>Z ho |<br>8<br>100<br>= ox aaee<br>Ww 6 ee ee<br>E {| oO~ Nea a<br>° ee ee<br>4<br>10 ee i eee<br>a ss<br>aa<br>2 aee ee ee<br>0 1<br>0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=60A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>
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## IKFW75N65EH5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1 | YT Tri Tt Ti Tri | Ti Tr-.<br>A Seeiilieseti ceed|ceed aatineee- aan| TTT 1 ee EMT IERAM TL ATE<br>ee HoseEEE KEE eee<br>=S i eree ar<br>x a a aa ee A Il = i sc<br>lly juni D = 0.5 <x a D = 0.5<br>0.2 0.2<br>BA lly 0.1 ti ea cee” VA<br>4 (Matin 0.1 2 Ua 0.1<br>a 0.1 er 7tt Aa Altt a aPei!) Aae.Cro CCH<br>0.05 0.05<br>0.02 0.02<br>7< ccm 0.01 STII/ ee 0.01<br>Seat Ae Seu < i aem<br>uwee| ee single pulse I eeuw 0.01 =e ee eee single pulse LL<br>= = eT TT Tt<br>F5 V VU be5 a|<br>Gi 0.01 Leal /| Gi CCT POA CEM eT CCTCCT<br>D CATE AeCFT<br>ZzSISTTTTT A Ty CCER A CHITuy aZZ TTTLULCANELr rTTTI A TTR ETN TTT R‘||CT<br>0.001<br>or YA ~~ Hilly oe en ee mel ~~ Il<br>| f a f! |<br>UVAMI |<br>i: 1 2 YIN 3 UU 4 CITA 5 EAT 6 EIT 7 VU Pods i: 1 Cnc 2 3 Te 4 5 6 7<br>ri[K/W]: 3.4E-3 0.110355 0.131565 0.188265 0.321405 0.19467 0.016485 ri[K/W]: 5.3E-3 0.134715 0.16149 0.20202 0.32256 0.194565 0.01649<br>τ i[s]: 2.0E-5 2.9E-4 2.8E-3 0.023721 0.289111 1.294166 18.68143 τ i[s]: 2.5E-5 2.9E-4 2.8E-3 0.0233 0.28843 1.29282 18.68457<br>0.001 1E-4<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>h)th(j- h)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 17.
( _D_ = _t_ p/T)
Figure 18.
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**----- Start of picture text -----**<br>
160 4.0<br>Tvj = 25°C, IF = 60A Tvj = 25°C, IF = 60A<br>Tvj = 175°C, IF = 60A Tvj = 175°C, IF = 60A<br>140 Sa 3.5 Sa<br>7\=<br>& 120 Ww 3.0<br>Lu XN 0)w<br>be> 100 x S =Oo 2.5<br>r><br>o<br>Q 80 | > 2.0<br>: iin<br>ag 60 —~ (a) 1.5 a<br>z ff<br>40 1.0<br>| 20 Lt PEL Ld ; 0.5 Lt tL LL dd.<br>0 0.0<br>800 900 1000 1100 1200 1300 1400 1500 1600 1700 800 900 1000 1100 1200 1300 1400 1500 1600 1700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19. Typical of diode ( _V_ R=400V)
## Figure 20.
( _V_ R=400V)
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## TRENCHSTOP[TM]
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60 0<br>Tvj = 25°C, IF = 60A Tvj = 25°C, IF = 60A<br>Tvj = 175°C, IF = 60A Tvj = 175°C, IF = 60A<br>= -500 EJ] iil<br>50 a<br>=< <,<br>= ys -1000<br>Zz 7 7<br>= 40 |<br>D 7 z N<br>O 7 uw<x -1500 N<br>in -<br>30 -2000<br>:: a xé SN<br>wi -2500<br>Ww an : an<br>20<br>D | oO ‘ \<br>if eo) -3000 N<br>: 10 LTTE LED<br>-3500<br>0 -4000<br>800 900 1000 1100 1200 1300 1400 1500 1600 1700 800 900 1000 1100 1200 1300 1400 1500 1600 1700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
180 Lt 2.50<br>Tvj = 25°C IF = 30A<br>Tvj = 175°C IF = 60A<br>160 2.25 IF = 120A<br>El fe) EB<br>140<br>2.00<br>= 120 Ww<br>= Sei "| 1.75 e e<br>si g<br>5 100 oO<br>s) ><br>eat 80 | | ytj ft Q<xra 1.50<br>1.25<br>60<br>1.00<br>40<br>0.75<br>20<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **PG-HSIP247-3-2**
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MILLIMETERS MILLIMETERS<br>DIMENSIONS DIMENSIONS<br>MIN. MAX. MIN. MAX.<br>A - 5.18 e 5.44<br>A1 4.70 4.90 E 15.70 15.90<br>A2 2.16 2.66 E1 13.68 13.88<br>DOCUMENT NO.<br>A3 0.20 0.28 E2 (6.00)<br>Z8B00195711<br>A4 1.30 1.50 E3 3.24 3.44<br>A5 0.31 0.51 E4 4.39 4.59 REVISION<br>A6 1.70 1.90 E5 (1.45) 01<br>A7 (0.25) E6 0.76 0.96<br>b 1.10 1.30 L 18.01 18.21 SCALE 3:1<br>b1 (2.88) L1 2.26 2.46 0 1 2 3 4 5 6 7 8mm<br>b2 (1.60) L2 1.50 1.70<br>b3 - 0.15 P 3.50 3.70<br>c 0.50 0.70 P1 5.70 5.90 EUROPEAN PROJECTION<br>D 22.70 22.90 Q 6.06 6.26<br>D1 16.96 17.16<br>D2 2.34 2.54<br>D3 - 0.30<br>ISSUE DATE<br>D4 4.35 4.55<br>28.06.2019<br>D5 19 70 19 90<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Revision�History**
IKFW75N65EH5
## **Revision:�2020-07-24,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2020-07-24|Final Data Sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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