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IKFW60N65ES5XKSA1
IGBT, 650 V, 77 A, 138W, HSIP247, 1.35 Vsat
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 138W
- Transistor Mounting: Through Hole
- Transistor Case Style: HSIP247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 77A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 3.27 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IKFW60N65ES5 ## TRENCHSTOP[TM] ## TRENCHSTOP[TM] **==> picture [480 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>« Very Low V CEsat , 1.35V at nominal current<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>* 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with full rated RAPID 1 fast antiparallel diode<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>« Resonant converters = Cc «<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKFW60N65ES5|650V|50A|1.35V|175°C|K60EES5|PG-HSIP247-3-2| Datasheet www.infineon.com 2020-07-09 IKFW60N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 2 V�2.1 2020-07-09 Datasheet IKFW60N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C<br>_T_h=65°C|_I_C||77.0<br>60.0<br>85.01)|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||200.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||200.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C|_I_F||77.0<br>60.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||200.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||138.0<br>101.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| |IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|0.92|1.09|K/W| |Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.11|1.31|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W| > 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier insulator > 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing. > 3) At force on body F = 500N, Ta = 25ºC 3 V�2.1 2020-07-09 Datasheet IKFW60N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.35<br>1.60|1.70<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2000|50<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|63.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|3108|-|pF| |Output capacitance|_C_oes||-|90|-|| |Reverse transfer capacitance|_C_res||-|12|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|120.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.2Ω,_R_G(off)=8.2Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns| |Rise time|_t_r||-|27|-|ns| |Turn-off delaytime|_t_d(off)||-|127|-|ns| |Fall time|_t_f||-|34|-|ns| |Turn-on energy|_E_on||-|1.23|-|mJ| |Turn-off energy|_E_off||-|0.55|-|mJ| |Total switchingenergy|_E_ts||-|1.78|-|mJ| V�2.1 2020-07-09 Datasheet 4 IKFW60N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=50.0A,<br>_di_F_/dt_=1000A/µs|-|77|-|ns| |Diode reverse recoverycharge|_Q_rr||-|1.21|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|23.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1500|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.2Ω,_R_G(off)=8.2Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns| |Rise time|_t_r||-|26|-|ns| |Turn-off delaytime|_t_d(off)||-|151|-|ns| |Fall time|_t_f||-|47|-|ns| |Turn-on energy|_E_on||-|1.63|-|mJ| |Turn-off energy|_E_off||-|0.85|-|mJ| |Total switchingenergy|_E_ts||-|2.48|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=50.0A,<br>_di_F_/dt_=1000A/µs|-|130|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|2.85|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|35.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1250|-|A/µs| V�2.1 2020-07-09 Datasheet 5 IKFW60N65ES5 ## ~~-BAdvancedisolaion~~ TRENCHSTOP[TM] ~~|~~ **==> picture [474 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 140 90<br>80<br>Nae eee<br>120<br>70<br>100<br>60<br>PE PX, hee<br> NE 80 ENG<br>50<br>40<br>PUNE 60 PEN<br>30<br>PL Ns 40 PN<br>20<br>PCCP Geer RS<br>20<br>10<br>. p| i} }eX<br>PEN EE<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 *N 175<br>T h , HEATSINK TEMPERATURE [°C] T h , HEATSINK TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of heatsink Figure 2. Collector current as a function of heatsink<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ 15V, T j ≤ 175°C)<br>200 200<br>180 180<br>ae) VGE = 20V /s eee VGE = 20V<br>| 18V 18V ee<br>160 160<br>15V 15V<br>140 140<br>2) 12V h- | 12V Sy<br>120 10V 120 10V<br>é WO). SE<br>8V 8V<br>om ann é |<br>100 100<br>SE ee<br>7V 7V<br>80 6V 80 6V<br>5V 5V<br>DL 60 ae~ /eeeee Sy 60<br>AIA LON<br>40 40<br>NK LNG<br>20 20<br>nn) ANG) ee<br>AN<br>0 | }h l 0 ULLA ENN<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Typical ( _T_ j=25°C) Figure 4. Typical ( _T_ j=175°C) 6 Datasheet 2020-07-09 IKFW60N65ES5 ## TRENCHSTOP[TM] **==> picture [474 x 688] intentionally omitted <==** **----- Start of picture text -----**<br> 200 3.0<br>Tvj = 25°C / IC = 25A<br>180 Tvj = 150°C / IC = 50A<br>IC = 100A<br>2.5<br>160 i ©z<br>xo<br>ee 140 eeeee><br>2.0<br>Wwetoia 120 7)ff<br>S =<br>oe 100 = 1.5<br>Oowe WWJ<br>oe 80 ee<br>4 f] ee E ee<br>1.0<br>° 60 :<br>re)<br>ee eee:<br>40<br>0.5<br>20 a ae<br>0 0.0<br>0 2 4 6 8 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 aa 1000<br>| 1 td(off) eea aee ee |i td(off) eea aee ee ee<br>I tf ee ee ee | tf a ee<br>td(on) td(on)<br>tr tr<br>Ff} E | }<br>| p o | pee<br>2 | “— ee ras<br>100 100<br>=D —_——— cn es =se a l O<br>ip) Ee er ee ee ip) a es<br>uw= Seeree eo a<br>- aa iee eeee eeee eeeee = Peed eee ee eeer<br>Q a ce ee Peete ||<br>Sf ef Ff eT<br>E E<br>2)=e- 10 aaee 2)- 10 aa<br>po a es<br>a a a<br>a ee a eeee<br>a ee ee a ee<br>a re a ee ee ee<br>1 1<br>0 30 60 90 120 150 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=8.2 , test circuit in Fig. E) I C =50A, test circuit in Fig. E)<br>I C<br>CE(sat)<br>V<br>t t<br>**----- End of picture text -----**<br> Datasheet 7 2020-07-09 IKFW60N65ES5 ## TRENCHSTOP[TM] **==> picture [522 x 688] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a a 6 | [Ctizr]<br>| 1 td(off) a a ee a ee ee typ.<br>I tf min.<br>I td(on) a ee ee ee eee _ max.<br>a eeee<br>tr 5<br><x<br>a :<br>Kk<br>2 100 ee a 4 ><br>ip) po (e) se<br>im— a a ee sS,<br>= a ee ee ee ee oO ars<br>- a ee ee ee Wy —<br>3<br>OQ ee — ——<br><=== iee e - ~~ Ne<br>O Ww ~~<br>E fF ~<br>2)7 10 po a eS WwWw 2 =~ ~ ~<br>ee<br>a ee se x<br>a eseo)<br>1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(ind. load, V CE =400V, V GE =0/15V, I C=50A, ( I C=0.5mA)<br>r G=8.2 , test circuit in Fig. E)<br>12 5.0<br>Eoff Eoff<br>Eon 4.5 Eon<br>Ets Ets<br>10 El ) |) 4 Ef}<br>— 4 UA — | | |<br>ap) cA4 ap)— 4.0 o<br>/<br>3.5<br>2 8<br>itA 3.0 2<br>> / 7 > - -<br>O / O 7<br>ow / 7 ow oo _o<br>3 6 4 7 5 2.5 -<br>oOZ/7 77 oO 2.0 -<br>=<br>Oo 4 / 7 Y\ = -—<br>= 7 O 1.5 Pia<br>y WA =<br>(op).er¢ 7 1.0<br>2 a<br>0.5<br>0 0.0<br>0 30 60 90 120 150 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=8.2 , test circuit in Fig. E) I C =50A, test circuit in Fig. E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br> 8 Datasheet 2020-07-09 IKFW60N65ES5 ## TRENCHSTOP[TM] **==> picture [474 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 4.0<br>Eoff Eoff<br>Eon Eon<br>Ets 3.5 Ets<br>2.5<br>3.0<br>Ww -- Ww ”<br>io)ip) 2.0 7 a" ep)op) ava<br>je) ac O 2.5 7<br>aa) - a) a<br>> -| > rd<br>© —-T o “7 7<br>m7 1.5 -_— Wi 2.0 > 7 oa<br>Zz a_i Zz<br>Ww eo Ww ma a<br>oO - oO of<br>Zz Zz 1.5 val a“<br>oo 1.0<br>°<br>1.0<br>2 7 —<br>2 T °<br>0.5<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(indload, V CE =400V, V GE =0/15V, I C=50A, (ind. load, T j =150°C, V GE =0/15V, I C=50A,<br>R G=8.2 , test circuit in Fig. E) R G=8.2 , test circuit in Fig. E)<br>16 Lt<br>V CC Cies<br>_—— V CC = 520V 1E+4 H Coes ——————————<br>14 Cres<br>IJ 7 / H ee<br>/ a | a<br>_<br>> 12 A / e e ee<br>a7<br>) 1000<br>< / / _ e e<br>— 10 /\/ ‘5 s<br>ATT aa<br>oc <xz A1 ~~<br>8<br>100<br>E / S) ll ————————<br>S / x gy<br>uw x Ee<br>Ww 6 fo O a ee ee<br>= ~ Ne<br>5 poee<br>4<br>10<br>a<br>2 a<br>0 1<br>0 20 40 60 80 100 120 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=50A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> 9 Datasheet 2020-07-09 IKFW60N65ES5 ## TRENCHSTOP[TM] **==> picture [477 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> 1 |<br>1<br>= eee §©Ll Moe<br>AINE | Ee<br>m NN ¢ TG | <x TT Torr err TTT Th<br>O PTT LUE ain LTT ETA FAWN CCTM TTI TTT ed D = 0.5 TT<br>S nie Ag O 0<br>0.2<br>ling Mh | S asagiite 7 attilinamat<br>D = 0.5 0.1<br>ey 0.1 en a aii ee<br>a ||| AZ| Ts f<br>0.2 0.05<br>2 =CCT HaeanSSOsce eS 0.1 nae| Wg q |_|rime anle |<br>D/A | See a<br>a Ea),aa 0.1 | SE eee ci” 2a nah 0.02 A<br>< a TT 0.05 | =e 7/2 0.01<br>Fd mi ZH —i = | A) | CO TTT<br>HL Ae, 0.02 I) LU SC gEff oT] ec single pulse TT<br>0.01<br>EIST INC] © Eater el<br>single pulse<br>BUZeee Ball Z2 CUPMLWaarAr Mille Peal<br>0.01<br>Q AN a 0.01 a ee a<br>EPH HEH EEE HEHE Q ssw A) zc<br>FE RIT iil) FE FA ii<br>ICT ts see EE RE<br>LAN A VY TTaPTTa PP A CO CPA CT SlCE<br>i: 1 2 3 4 5 6 7 i: 1 2 3 4 5 6<br>ri[K/W]: 5.1E-3 0.1241 0.1557 0.1932 0.3077 0.1853 0.01569 ri[K/W]: 0.09216 0.2457 0.171 0.3483 0.3079 0.02216<br>τ i[s]: 1.9E-5 2.9E-4 2.8E-3 0.023339 0.28853 1.295006 18.70876 τ i[s]: 2.9E-4 1.9E-3 0.016279 0.176588 0.851775 15.9566<br>0.001 |Ce 0.001 /jj aisd<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>h)th(j- h)th(j-<br>Z Z<br>**----- End of picture text -----**<br> Figure 17. **==> picture [32 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( D = t p/T)<br>**----- End of picture text -----**<br> Figure 18. ( _D_ = _t_ p/T) **==> picture [249 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>Tvj = 25°C, IF = 50A<br>Tvj = 150°C, IF = 50A<br>160 =<br>~<br>140<br>[TT ye<br>2 _ m7<br>: 120 _~ t<br>- ~~ I<br>> — ee oO<br>>ee 100 Ww<br>80<br>Bo Ld<br>60<br>z e<br>40<br>20<br>0<br>700 800 900 1000 1100 1200 1300 1400<br>di F /dt , DIODE CURRENT SLOPE [A/s]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> **==> picture [235 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>Tvj = 25°C, IF = 50A<br>Tvj = 150°C, IF = 50A<br>EO<br>ye 3.5 | o P<br>m7 3.0<br>t<br>I<br>oO 2.5<br>Ww<br>2.0<br>e 1.5 fp<br>1.0<br>0.5 Pit tt dd<br>0.0<br>700 800 900 1000 1100 1200 1300 1400<br>di F /dt , DIODE CURRENT SLOPE [A/s]<br>rr<br>Q<br>**----- End of picture text -----**<br> Figure 19. Typical of diode ( _V_ R=400V) Figure 20. ( _V_ R=400V) 10 Datasheet 2020-07-09 IKFW60N65ES5 ## TRENCHSTOP[TM] **==> picture [489 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 50 0<br>Tvj = 25°C, IF = 50A Tvj = 25°C, IF = 50A<br>45 Tvj = 150°C, IF = 50A Tvj = 150°C, IF = 50A<br>-500<br>< 40 pot = < | |e<br>kK “7<br>35<br>o3“7 -ai -1000 ~<br>foo 30 - Ne<br>> 25 Ww -1500 ~<br>oe) 7]LL<br>ega 20 | de -<br>-2000<br>Ww<br>iS 15 aQ \<br>ff O \<br>10<br>« Pt ft ff} | dy a \<br>-2500<br>5<br>0 -3000<br>700 800 900 1000 1100 1200 1300 1400 700 800 900 1000 1100 1200 1300 1400<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br> Figure 21. Typical function ( _V_ R=400V) Figure 22. ( _V_ R=400V) **==> picture [474 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 150 Lt 2.50<br>135 TTvjvj = 25°C = 150°C // IIFF = 25A = 50A<br>2.25 IF = 100A<br>120<br>2.00<br>105<br>= Ww<br>1.75<br>90<br>D e)<br>s) | ><br>: 75 Pt ft LF :Q 1.50 P| | tt<br>t <x<br>60<br>= (e)z 1.25 ———___]<br>45<br>1.00<br>30<br>0.75<br>15<br>a ee<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 23. Typical diode forward current as a function Figure 24. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br> 11 Datasheet 2020-07-09 IKFW60N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **PG-HSIP247-3-2** **==> picture [431 x 640] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS MILLIMETERS<br>DIMENSIONS DIMENSIONS<br>MIN. MAX. MIN. MAX.<br>A - 5.18 e 5.44<br>A1 4.70 4.90 E 15.70 15.90<br>A2 2.16 2.66 E1 13.68 13.88<br>DOCUMENT NO.<br>A3 0.20 0.28 E2 (6.00)<br>Z8B00195711<br>A4 1.30 1.50 E3 3.24 3.44<br>A5 0.31 0.51 E4 4.39 4.59 REVISION<br>A6 1.70 1.90 E5 (1.45) 01<br>A7 (0.25) E6 0.76 0.96<br>b 1.10 1.30 L 18.01 18.21 SCALE 3:1<br>b1 (2.88) L1 2.26 2.46 0 1 2 3 4 5 6 7 8mm<br>b2 (1.60) L2 1.50 1.70<br>b3 - 0.15 P 3.50 3.70<br>c 0.50 0.70 P1 5.70 5.90 EUROPEAN PROJECTION<br>D 22.70 22.90 Q 6.06 6.26<br>D1 16.96 17.16<br>D2 2.34 2.54<br>D3 - 0.30<br>ISSUE DATE<br>D4 4.35 4.55<br>28.06.2019<br>D5 19 70 19 90<br>**----- End of picture text -----**<br> 12 V�2.1 2020-07-09 Datasheet IKFW60N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 13 V�2.1 2020-07-09 Datasheet IKFW60N65ES5 **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �5�Advanced�Isolation ## **Revision�History** IKFW60N65ES5 ## **Revision:�2020-07-09,�Rev.�2.1** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2020-07-09|Final Data Sheet| 14 V�2.1 2020-07-09 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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