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IKFW60N60DH3EXKSA1
IGBT, 53 A, 2.2 V, 141 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 3
- Power Dissipation: 141W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 53A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 240 |
| Price | 2.35 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKFW60N60DH3E
## TRENCHSTOP[TM]
## **Features:**
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vj<br>* Positive temperature coefficient in V CE(sat)<br>« Low EMI<br>* Very soft, fast recovery anti-parallel diode<br>* Maximum junction temperature 175°C<br>*2500V RMS — electrical isolation, 50/60 Hz, t<br>**----- End of picture text -----**<br>
http://www.infineon.com/igbt
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C<br>G<br>E<br>ces<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKFW60N60DH3E|600V|50A|2.2V|175°C|K60DDH3E|PG-TO247-3-AI|
Datasheet www.infineon.com
2017-09-21
IKFW60N60DH3E
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKFW60N60DH3E
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C<br>_T_h=65°C|_I_C||53.0<br>44.0<br>74.01)|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||150.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||150.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°Cvaluelimitedbybondwire<br>_T_h=65°C|_I_F||40.0<br>32.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||150.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||141.0<br>104.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|0.90|1.06|K/W|
|Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.75|1.96|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
> 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier insulator
> 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
> 3) At force on body F = 500N, Ta = 25ºC
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IKFW60N60DH3E
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.80|2.70<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=25.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.45|1.90<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.58mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>600|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|19.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2301|-|pF|
|Output capacitance|_C_oes||-|98|-||
|Reverse transfer capacitance|_C_res||-|67|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=50.0A,<br>_V_GE=15V|-|210.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|245|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=7.0Ω,_R_G(off)=7.0Ω,<br>_L_σ=75nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|39|-|ns|
|Turn-off delaytime|_t_d(off)||-|170|-|ns|
|Fall time|_t_f||-|19|-|ns|
|Turn-on energy|_E_on||-|1.57|-|mJ|
|Turn-off energy|_E_off||-|0.72|-|mJ|
|Total switchingenergy|_E_ts||-|2.29|-|mJ|
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## TRENCHSTOP[TM] �Advanced�Isolation
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1000A/µs|-|68|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.55|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-834|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=7.0Ω,_R_G(off)=7.0Ω,<br>_L_σ=75nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|37|-|ns|
|Turn-off delaytime|_t_d(off)||-|198|-|ns|
|Fall time|_t_f||-|21|-|ns|
|Turn-on energy|_E_on||-|2.18|-|mJ|
|Turn-off energy|_E_off||-|0.95|-|mJ|
|Total switchingenergy|_E_ts||-|3.13|-|mJ|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1000A/µs|-|104|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.43|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|19.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-637|-|A/µs|
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IKFW60N60DH3E
## TRENCHSTOP[TM]
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100<br>140<br>a<br>PT ATTTT<br>ey 120 Naa<br>_ Y A | _ |<br>not for linear use<br>€ | [f] [il][e] [)]<br>nanre 10 aAU L U ieS 100 \<br>5 ea Ee \<br>ad aee 80<br>O eee ll o \<br>i a 60<br>LUVINBBE 1 IM TM e)2 40 PN<br>EE \<br>a ee<br>|ee ee 20 Pf) ft IN\<br>0.1 0<br>1 comm 10 100 1000 = IN 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T h , HEATSINK TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of heatsink<br>( D =0, T h =25°C, T j 175°C, V GE =15V, t p ≤ 1µs) temperature<br>( T j ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
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60<br>TO247 Advanced Isolation<br>TO247 with insulator film (using same chip)<br>140 VGE=20V<br>50<br>17V<br>120 15V<br>E 40 NE 13V<br>:ZEL 100 Sy<br>11V<br>X Z SOSA) ——<br>9V<br>OPN 30 w/e 80<br>7V<br>pL \ © . SH[<br>5V<br>4 ON EL 60 AA<br>20<br>8 _ \ 4 \ N ff?<br>oY 8 \ fA —_—<br>40<br>‘ /<br>10 NN {<br>‘A Ko<br>20<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T h , HEATSINK TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of heatsink Figure 4. Typical output characteristic<br>temperature ( T j=25°C)<br>( V GE ≥ 15V, T j ≤ 175°C, insulator film: 152yum,<br>0.9W/mK)<br>I C I C<br>**----- End of picture text -----**<br>
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IKFW60N60DH3E
## TRENCHSTOP[TM]
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Tvj = 25°C<br>/ Tvj = 175°C /<br>140 VGE=20V 140<br>YA IE fs<br>17V<br>120 15V 120<br>x N\ J<br>13V<br>f N\ / va x /<br>100 100<br>wye 11V =SY,NOY~~ [| L nyfe<br>9V<br>8 NW, 8<br>80 80<br>7V<br>9 NOG S /<br>5V<br>60 60<br>e) Q e)<br>S|; 40 NGNY,ye °: 40<br>fFyy /<br>20 [\\] 20 /<br>Yi [\] | Lf<br>0 A T iN 0 _<br>0 1 2 3 4 5 6 4 6 8 10 12 14 16<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T j=175°C) ( V CE=20V)<br>5.0 a ee<br>iaa<br>IC = 25A I td(off) a<br>IC = 50A tf<br>4.5 IC = 100A td(on)<br>S | tr eeeeee<br>5 be — a<br>E --" a,<br>4.0<br>: - |<br>100<br>| | ct<br>xt “7 — pe<br>7A) 3.5 s a) aOPPT<br>v 7 ~ a Pn<br>W wee = eae<br>= 3.0 - O Ne ec ee<br>we 2.5 == =<br>10<br>°o4-_ =_—e eo (op)JE Leaa asO<br>5<br>2.0<br>1.5 ——— ><br>1.0 1<br>Piety yy } EE<br>25 50 75 100 125 150 175 0 20 40 60 80 100<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (ind. load, T j =175°C, V CE =400V, V GE=0/15V,<br>R G=7 , test circuit in Fig. E)<br>I C I C<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Datasheet
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IKFW60N60DH3E
## TRENCHSTOP[TM]
1000
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td(off) 1 td(off)<br>1000 tf tf<br>a td(on) td(on)<br>tr tr<br>: oe I a<br>SS a es ee<br>a —————————————<br>i ye<br>100<br>YnSane 100 ===Yn a eseeee<br>s rs s a ee es ee<br>- —— elacco a a<br>) |} a er? ee a ee eeee<br>> a ee es ee ee ee ><br>ee<br>S [| ee | | | |<br>= =<br>10<br>”. 10 a ee<br>ee ES<br>a a a eeee<br>a ee ee ee ee ss ss<br>[4] a ee ee<br>ee re<br>1 1<br>0 10 20 30 40 50 60 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=0/15V,=0/15V, (ind. load, V CE =400V, V GE =0/15V, I C=50A,=50A,<br>I C =50A, test circuit in Fig. E) r G=7=7 , test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
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Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=0/15V,=0/15V, (ind. load, V CE =400V, V GE =0/15V, I C=50A,=50A,<br>I C =50A, test circuit in Fig. E) r G=7=7 , test circuit in Fig. E)<br>6 10<br>typ. Eoff<br>~e. min. 9 Eon f<br>max. Ets<br>wi ~ f<br>O SARSs _ 8 /Ui<br>5<br>> SAL HM 7 /<br>5 ™. oe rr 6 rd<br>nt oO / 7<br>: 4 5<br>-sN<br>ti ~ Iw a 4 /<br>EF ~~ ~ Zzre 7 fos7<br>— I ¢<br>ul “A E 3 5 A ¢<br>3<br>2<br>¢<br>oY<br>| 1 aT77 Pa<br>> i<br>2 0<br>25 50 75 100 125 150 0 20 40 60 80 100<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.58mA) (ind. load, T j =175°C, V CE =400V, V GE=0/15V,<br>R G=7 , test circuit in Fig. E)<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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Datasheet
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IKFW60N60DH3E
## TRENCHSTOP[TM]
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10 4.0<br>a<br>Eoff r Eoff<br>9 Eon Y Eon<br>Ets ¢ 3.5 Ets<br>¢<br>ys 8 7 ys<br>3.0<br>7<br>2.5<br>7 6 4 7 aa<br>>¢y><br>5 2.0<br>5“ ‘ 5 -_— =<br>E 4 Qo bro<br>1.5<br>3<br>= “77 7 &<br>1.0<br>2<br>0.5<br>1<br>0 0.0<br>0 10 20 30 40 50 60 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=0/15V, (indload, V CE =400V, V GE =0/15V, I C=50A,<br>I C =50A, test circuit in Fig. E) R G=7 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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4.0 16<br>Eoff iY — V CC Ld =120V /<br>Eon “ _—— V CC = 480V<br>3.5 Ets 14 ae<br>a ?<br>E 3.0 y “ S 12 KA<br>ty7) “ ra ra7 3)<x2 // //<br>2.5 10<br>te 2.0 4 Z i 8 P|<br>a77<br>o<br>Z 1.5 ” a = 6<br>= “ ul<br>7 <x<br>O 7 _ E<br>= 1.0 sd ° 4<br>0.5 2<br>“ees ]| fl<br>0.0 0<br>200 250 300 350 400 450 500 0 40 80 120 160 200 240<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=50A)<br>(ind. load, T j =175°C, V GE =0/15V, I C=50A,<br>R G=7 , test circuit in Fig. E)<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
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IKFW60N60DH3E
## TRENCHSTOP[TM]
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500<br>Cies<br>1E+4 Coes<br>Cres 450<br>a a TT<br>400<br>ee ee = 2 4<br>{OO— SS>Oo<br>L ag 350 Wi<br>Lu 1000 a<br>O ——————— rT 300 /<br>E a Pe) y<br>°a EeNo ff 250 /<br>S O<br>Oo 200<br>100<br>PE<br>EE ee | (e)<br>a ee I 150<br>a |<br>ee<br>100<br>10 50<br>0 10 20 30 10 12 14 16 18 20<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 400V, start at T j=25°C)<br>14<br>1<br>_g 12 Z aTT eet| ee|<br>D = 0.5<br>2 INF ff ff} dy i UR mS el<br>WwETIN]\ Te)O MEHeer TT | Ue ea TTT 0.2 |<br>0.1<br>10<br>Z2a |) aNNO) fA8) 0.1 Lee 0.05 I Il<br>0.02<br>Ir \ = SS 2 A a<br>- NX <xa PTE/Na 2211 CO<br>0.01<br>= 8 Pt ff |X] Ly | S es ree) // CT Th<br>= S Y PTT ae ren Ter mil<br>single pulse<br>: Pt f | | | RO ul Ee aE nll<br>= Zz<br>S 6 rT PP eS |NO IE A<br>©= Siteep) 0.01 TP—am f AC<br>Tr s |) | —— Th<br>nO = BL BAMHI}<br>- 4 PTPT ty)tyyyyy)ddddddd : i: PLAC CAT AME 1 CM 2 TAIT 3 FTAt 4 CCC 5 cthies_ca=taine oon 6 ot 7 oll Ill<br>ri[K/W]: 3.0E-3 0.104852 0.13662 0.1914 0.26906 0.3091 0.022616<br>τ i[s]: 1.6E-5 2.6E-4 2.2E-3 0.018514 0.201746 0.902516 15.90837<br>2 0.001<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal impedance as a<br>gate-emitter voltage function of pulse width<br>( V CE 400V, start at T j 150°C) ( D = t p/T)<br>C<br>I C(SC)<br>t SC h)th(j-<br>Z<br>**----- End of picture text -----**<br>
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TRENCHSTOP[TM]
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250<br>Tvj = 25°C, IF = 25A<br>Tvj = 175°C, IF = 25A<br>ee fF | . |<br>1<br>— PT Tn TT Arr 11 ||| 200<br>D = 0.5<br>WwW EC eee =<br>Ss)z EEST ATTT TT7” 0.2 He TD=<br>0.1<br>oO f 0.05<br>150<br>0.1 | 0.02 MM)<br>ES Feet 0.01 Cet) ee ee<br>wa CC ne ee (oe)<br>WwWx ETaEaALN iGAaTUl CaP single pulse 0TT | WwWay sy<br>Se 100<br>: mmm aeLN een UT ET Hil aEIT PXN S|<br>2$ 0.01 CLLC)UI a Ro ii ff& |-——__<br><i. AOCFapeeueIAIeee Co Cn + tH 1}imnm t-- ‘—|| . 50 PtP<br>UTI ITI Cer: Co=te/Re ||<br>pf [{A] [PLAL] i: TTICU 1 TIE 2 IMT 3 TT 4 TTT 5 TT 6 T Pt<br>ri[K/W]: 0.341 0.56903 0.28633 0.34265 0.36597 0.023397<br>τ i[s]: 2.5E-4 1.6E-3 0.013093 0.158585 0.778817 15.94388<br>0.001 | 0 Pf} |<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 200 400 600 800 1000 1200<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>h)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 21. Diode function ( _D_ = _t_ p/T)
Figure 22. Typical of diode ( _V_ R=400V)
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1.6 LE 24 LE<br>Tvj = 25°C, IF = 25A Tvj = 25°C, IF = 25A<br>Tvj = 175°C, IF = 25A Tvj = 175°C, IF = 25A<br>1.4 21<br>EO) EB<br>— _— -—T7 - o<br>1.2 18<br>mw oc 7<br>< cc 7<br>1.0 15<br>rs) a) 7<br>> > 7<br>fe) 0.8 12 —<br>wa<br>eee eae<br>0.6 | | 7p) 9<br>a; 0.40.2 Ptrf| ff 3° 63 HtZ | | fl<br>0.0 0<br>200 400 600 800 1000 1200 200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 23.
( _V_ R=400V)
Figure 24.
( _V_ R=400V)
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## TRENCHSTOP[TM]
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0 LE LY /<br>Tvj = 25°C, IF = 25A Tvj = 25°C<br>Tvj = 175°C, IF = 25A Tvj = 175°C<br>= -100 EO| 140 EL a fs /<br>=<br>-200 \ /<br>120<br>|2m -300 WwW2 100 | /<br>LL -400 na /<br>Kk Q 80<br>, -500 S<br>m 60<br>:<br>-600<br>ra ~ _<br>Ww : : PLLA | |<br>ra) -700 . 40<br>5 Pf | NS y,<br>20<br>-800<br>\ aa<br>-900 0<br>200 400 600 800 1000 1200 0 1 2 3 4<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
( _V_ R=400V)
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2.25<br>IF = 12.5A<br>IF = 25A<br>IF = 50A<br>Ee|) |<br>2.00<br>e e<br>Ww<br>SP<br>ke 1.75<br>I<br>><br>Sp<br>Q<br>aa<br>EpSs 1.50<br>x<br>LL<br>se<br>1.25 eee<br>PT<br>1.00<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
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## TRENCHSTOP[TM] �Advanced�Isolation
## **PG-TO247-3-AI (PGHSIP2473)**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A - 5.18 DOCUMENT NO.<br>A1 4.70 4.90 Z8B00186434<br>A2 2.23 2.59 REVISION<br>A3 0.20 0.28 02<br>b 1.10 1.30<br>c 0.50 0.70 SCALE 3:1<br>D 22.20 22.40 0 1 2 3 4 5 6 7 8mm<br>D1 16.96 17.16<br>E 15.70 15.90<br>E1 13.68 13.88 EUROPEAN PROJECTION<br>e 5.44<br>L 18.31 18.91<br>L1 2.76 2.96<br>øP 3.50 3.70<br>øP1 5.70 5.90 ISSUE DATE<br>Q 5.96 6.36 05.06.2018<br>**----- End of picture text -----**<br>
Note: For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC6006826 and IEC60068227). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of <20µm per 100mm and roughness of <10µm.
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Revision�History**
IKFW60N60DH3E
## **Revision:�2017-09-21,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-09-21|Final data sheet|
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Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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