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IKFW50N65ES5XKSA1
IGBT, 650 V, 74 A, 127W, HSIP247, 1.35 Vsat
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 127W
- Transistor Mounting: Through Hole
- Transistor Case Style: HSIP247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 74A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.33 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKFW50N65ES5
## TRENCHSTOP[TM]
## TRENCHSTOP[TM]
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Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>« Very Low V CEsat , 1.35V at nominal current<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>* 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with full rated RAPID 1 fast antiparallel diode<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>« Resonant converters = Cc «<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKFW50N65ES5|650V|40A|1.35V|175°C|K50EES5|PG-HSIP247-3-2|
Datasheet www.infineon.com
2020-07-09
IKFW50N65ES5
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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IKFW50N65ES5
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C<br>_T_h=65°C|_I_C||74.0<br>59.0<br>69.01)|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C|_I_F||74.0<br>59.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||127.0<br>93.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.01|1.19|K/W|
|Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.14|1.34|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
> 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier insulator
> 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
> 3) At force on body F = 500N, Ta = 25ºC
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.35<br>1.60|1.70<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1700|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|44.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|2510|-|pF|
|Output capacitance|_C_oes||-|70|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|95.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|130|-|ns|
|Fall time|_t_f||-|23|-|ns|
|Turn-on energy|_E_on||-|0.86|-|mJ|
|Turn-off energy|_E_off||-|0.40|-|mJ|
|Total switchingenergy|_E_ts||-|1.26|-|mJ|
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## TRENCHSTOP[TM] �5�Advanced�Isolation
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=980A/µs|-|69|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.11|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|23.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-2000|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|156|-|ns|
|Fall time|_t_f||-|48|-|ns|
|Turn-on energy|_E_on||-|1.20|-|mJ|
|Turn-off energy|_E_off||-|0.69|-|mJ|
|Total switchingenergy|_E_ts||-|1.89|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=980A/µs|-|115|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.62|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|38.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1350|-|A/µs|
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## TRENCHSTOP[TM] ~~BB~~ Advancedisolation
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140 90<br>80<br>120 Pi tt ft PE<br>70<br>100 NOT KE<br>60<br>PENCE 80 PNcee<br>50<br>40<br>60<br>SEE KGRE seen<br>30<br>PL 40 UTNC P| |TN<br>20<br>20 PTT TON fF TN<br>10<br>PEN P|ON| |peN<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T h , HEATSINK TEMPERATURE [°C] T h , HEATSINK TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of heatsink Figure 2. Collector current as a function of heatsink<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ 15V, T j ≤ 175°C)<br>160 160<br>140 VGE = 20V Hh 140 VGE = 20V WLS<br>18V 18V<br>120 15V 120 15V<br>BEE |p-anee=="//ie<br>12V 12V<br>100 100<br>| 10V ow 10V<br>8V 8V<br>S0ee! 80 le 80 | Se<br>O 7V (enn ete 7V 7a<br>6V 6V<br>BRS 60 O 60 |<br>5V 5V<br>: 6222) canes Ae"<br>40 40<br>EIN Anant ci /Z4a8<br>20 20<br>| |ye<br>AK) COLLAB<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
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IKFW50N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
160 3.0<br>Tvj = 25°C / IC = 20A<br>Tvj = 150°C / IC = 40A<br>140 i = IC = 80A<br>i] z 2.5<br>120<br>z Pa<br>Z > 2.0<br>100<br>Wwia F7)<br>a om<br>a) Ww<br>vw 80 E 1.5<br>9<br>: a<br>45 60 5FE 1.0<br>° p a:<br>(e)<br>40<br>0.5<br>20<br>0 0.0<br>0 2 4 6 8 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
Figure 6. Typical a function ( _V_ GE=15V)
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1000 aa 1000<br>1 td(off) a a i td(off) a a<br>I tf p o | tf a ee ee eee<br>td(on) td(on)<br>I a ee ee I ee<br>tr tr<br>| ee ee eee<br>p o | SE ——SEEEEs<br>oe e e e e<br>100 100<br>ip) a Ns a a es<br>uw ER Ne ee ee ee ee ip) po<br>= a e SSa eeaet eeene = a aee ee ee ee eee<br>- a eeee cn il led eee te<br>Q a ee P| |eelernmepee<br>=o ca ee<br>=Sle = o<br>2)- 10 aa aae 2)- 10 aa ss<br>a es a eeee<br>a ee es a ee ee<br>a ee ee ee ee ee ee ee ee<br>1 1<br>Pt; [tty] tt} y o EET]Ey<br>0 20 40 60 80 100 120 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=10 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
Datasheet
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IKFW50N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1000 LS 6 4<br>| 1 td(off) a a ee a ee ee typ.<br>I tf min.<br>td(on) max.<br>I a eee e eeeee eee _ = |<br>tr 5<br><x<br>p> ys Sl<br>Kk<br>100 4<br>ip) po (e) se<br>im— a a a ee sS,<br>= a ee oO ars<br>- a es el ee Wy —<br>3<br>OQ a ee ee ee <— =<br><=se bo-_— - ~~ Ne<br>O Ww ~~<br>E fF ~<br>2)7 10 po a eS WwWw 2 =~ ~ ~<br>ee<br>a ee se x<br>a eseo)<br>1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(ind. load, V CE =400V, V GE =0/15V, I C=40A, ( I C=0.40mA)<br>r G=10 , test circuit in Fig. E)<br>8 4.0<br>Eoff Eoff<br>Eon Eon<br>7 | Ets 7 3.5 | Ets<br>f<br>oo / oo<br>6 3.0<br>op) / io) o*<br>(op) / icp) oe<br>e) 5 e) 2.5<br>pa v2 _I o”<br>> / > oT<br>) , ) Daa<br>4 2.0<br>a fo¢ 7 iT at 7 a-7— - -<br>3 1.5<br>I ¢ 4 L -”<br>e ¢<br>= ra 7 LY e “7<br>n: 21 Y ra-ee7Se47 a7 7 ae7 =n e 1.00.5 7 T ed ——<br>gc<br>0 0.0<br>0 20 40 60 80 100 120 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=10 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>
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## IKFW50N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
3.0 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>2.5 2.5<br>a) a) wn<br>Lu Lu a<br>(op)7) 2.0 4 io) 2.0 o<br>oO _ oO ><br>a] "7 a] a<br>> oes > ag<br>O -" (Y) y Pa<br>i 1.5 - 4 1.5 : 2<br>oC) So) oa a7<br>Zz ~— Zz “7 so<br>= -— = o a”<br>OE: 1.0 -— smn st IEOE 1.0 , x - a =_<br>°<br>0.5 0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(indload, V CE =400V, V GE =0/15V, I C=40A, (ind. load, T j =150°C, V GE =0/15V, I C=40A,<br>R G=10 , test circuit in Fig. E) R G=10 , test circuit in Fig. E)<br>16<br>V CC Cies<br>_—— V CC = 520V V4 1E+4 H Coes ——————————<br>14 tt Cres aa eeee<br>/ ee<br>_<br>m 12<br>) 1000 ee<br>~ / _ {_—— ee<br>i Le<br>so) 10 / ATTQa a a<br>o Zz SSN<br>: 8 x<br>O 100 py<br>La Se (ee<br>uw= ey eees<br>uw= 6 pi xOo eea<br>ep ~ ee<br>4<br>10<br>a<br>2 a<br>0 1<br>0 20 40 60 80 100 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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1 1<br>—= CetTT TT eaePt rmTT i | = SOCreeeetTT eeeeC CCT<br>NaWw TTeerTreee cr mmaomTT aeea ee | ca| D = 0.5<br>2 TTIHECTPIS. ee TI TE eT SeHTT Te e ... 0.2 HCTT<br>Z cr eTY D = 0.5 TILI Sci eeet meni?no | cata AL 0.1<br>0.2 0.05<br>0.1 0.1<br><xfAa_ SSS ii a a0 ae 0.1 LOOTulUMToran a_ | PTAeIEEEA oer25 ae A 0.02 |Il|<br>owS EeermeS 0.05 Con << eePero rr 0.01 CnCOM<br>0.02 single pulse<br>WW Poa eee» HH oe Siem a/c oe<br>0.01<br>F e ee7ZeTriA 1 SO eT Hh<br>ZzSUAn 0.01 |||Wit// TI TTITTSa1 single pulse LIslTTIl)zn 0.01 entLEI)pwn eMFowiAT<br>2 oo rR. [il & ee R. {fl<br>ow |PTT TT i | -- filii) a<< POTa A|CO -- fllIl<br>=- ANIBP I TTT TT G cave, HG co=teiee HU{lll - APII TA AC2 PT| TT G care, HG Co=te/Re _ Ill|<br>} LAUT i: 1 TTT 2 PT 3 4 ET 5 TV 6 PET 7 ET LLUPMT i: 1 FATADT 2 UELT 3 C T 4 C 5 mTCU 6 roo 7<br>ri[K/W]: 5.1E-3 0.1557 0.199 0.2083 0.3082 0.1853 0.01572 ri[K/W]: 0.01282 0.1855 0.2348 0.215 0.3072 0.1842 0.01563<br>τ i[s]: 2.0E-5 2.9E-4 2.8E-3 0.023225 0.288506 1.294172 18.69894 τ i[s]: 2.6E-5 3.0E-4 2.7E-3 0.022941 0.288184 1.292329 18.70911<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal impedance as a Figure 18. Diode transient thermal impedance as a<br>function of pulse width function of pulse width<br>( D = t p/T) ( D = t p/T)<br>180 3.5<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 150°C, IF = 40A Tvj = 150°C, IF = 40A<br>160<br>3.0<br>\ O<br>140<br>ry ~ N =<br>Ww ~ 2.5 =<br>= 120 >~ Ee<br>>O<br>2.0<br>100<br>i [z]<br>80<br>1.5<br>9) Lu<br>4 9)<br>WW 60 om<br>Rene eee<br>1.0<br>ci Wwif __—<br>40<br>| ; 0.5 | tf] td<br>20<br>0 0.0<br>400 500 600 700 800 900 1000 400 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>h)th(j- h)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=400V)
Figure 20.
( _V_ R=400V)
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Datasheet
2020-07-09
IKFW50N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
40 ee | 0 |<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 150°C, IF = 40A -250 Tvj = 150°C, IF = 40A<br>35 EJ es a | | cE 7 )<br>“ _<br>< oo <x,: -500 |<br>30<br>7 -750 IN<br>25<br>ow 7 a aN \<br>-1000<br>3 a ix awSf |<br>= LL N<br>20 -1250<br>8: = ef | | |Mor><br>or x -1500 \<br>Ww& 15 wiBK<br>-1750<br>ff 10 O<br>-2000<br>° 5 Pi] tt ;<br>-2250<br>0 -2500<br>400 500 600 700 800 900 1000 400 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>120 Lt 2.50<br>TTvjvj = 25°C = 150°C // IIFF = 20A = 40A<br>| 2.25 IF = 80A<br>100<br>2.00<br>80<br>a Ww 1.75<br>“ EFg<br>a fe)<br>3. ><br>Q 60 Q 1.50<br>a<br>$ =g<br>a | o 1.25<br>40<br>1.00<br>20<br>0.75<br>LY<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 23. Typical diode forward current as a function Figure 24. Typical diode forward voltage as a function<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **PG-HSIP247-3-2**
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MILLIMETERS MILLIMETERS<br>DIMENSIONS DIMENSIONS<br>MIN. MAX. MIN. MAX.<br>A - 5.18 e 5.44<br>A1 4.70 4.90 E 15.70 15.90<br>A2 2.16 2.66 E1 13.68 13.88<br>DOCUMENT NO.<br>A3 0.20 0.28 E2 (6.00)<br>Z8B00195711<br>A4 1.30 1.50 E3 3.24 3.44<br>A5 0.31 0.51 E4 4.39 4.59 REVISION<br>A6 1.70 1.90 E5 (1.45) 01<br>A7 (0.25) E6 0.76 0.96<br>b 1.10 1.30 L 18.01 18.21 SCALE 3:1<br>b1 (2.88) L1 2.26 2.46 0 1 2 3 4 5 6 7 8mm<br>b2 (1.60) L2 1.50 1.70<br>b3 - 0.15 P 3.50 3.70<br>c 0.50 0.70 P1 5.70 5.90 EUROPEAN PROJECTION<br>D 22.70 22.90 Q 6.06 6.26<br>D1 16.96 17.16<br>D2 2.34 2.54<br>D3 - 0.30<br>ISSUE DATE<br>D4 4.35 4.55<br>28.06.2019<br>D5 19 70 19 90<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Revision�History**
IKFW50N65ES5
## **Revision:�2020-07-09,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2020-07-09|Final Data Sheet|
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V�2.1 2020-07-09
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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