Image not available
Illustrative purposes only
IKFW50N65EH5XKSA1
IGBT, 650 V, 59 A, 124W, HSIP247, 1.65 Vsat
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 124W
- Transistor Mounting: Through Hole
- Transistor Case Style: HSIP247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 59A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.38 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKFW50N65EH5
## TRENCHSTOP[TM]
**==> picture [14 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
TM<br>**----- End of picture text -----**<br>
**==> picture [444 x 16] intentionally omitted <==**
**----- Start of picture text -----**<br>
High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with full<br>**----- End of picture text -----**<br>
**==> picture [480 x 203] intentionally omitted <==**
**----- Start of picture text -----**<br>
Features and Benefits: C<br>TRENCHSTOP [TM] 5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>* 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>* Very soft, fast recovery antiparallel diode<br>¢ Maximum junction temperature 175°C<br>*2500V RMS electrical isolation, 50/60Hz, t=1min<br>* 100% tested isolated mounting surface<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models: Sf<br>http://www.infineon.com/igbt/<br>Potential Applications: =F 2<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKFW50N65EH5|650V|40A|1.65V|175°C|K50EEH5|PG-HSIP247-3-2|
Datasheet www.infineon.com
2020-09-17
IKFW50N65EH5
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
2
V�2.1 2020-09-17
Datasheet
IKFW50N65EH5
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C<br>_T_h=65°C|_I_C||59.0<br>49.0<br>69.01)|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C|_I_F||74.0<br>59.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||124.0<br>91.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.03|1.21|K/W|
|Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.14|1.34|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
> 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier insulator
> 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
> 3) At force on body F = 500N, Ta = 25ºC
3
V�2.1 2020-09-17
Datasheet
IKFW50N65EH5
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.95|2.10<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>4000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|50.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|2347|-|pF|
|Output capacitance|_C_oes||-|57|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|95.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.1Ω,_R_G(off)=15.1Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|23|-|ns|
|Turn-off delaytime|_t_d(off)||-|138|-|ns|
|Fall time|_t_f||-|28|-|ns|
|Turn-on energy|_E_on||-|1.20|-|mJ|
|Turn-off energy|_E_off||-|0.40|-|mJ|
|Total switchingenergy|_E_ts||-|1.60|-|mJ|
V�2.1 2020-09-17
Datasheet
4
IKFW50N65EH5
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �5�Advanced�Isolation
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|52|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.95|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1081|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.1Ω,_R_G(off)=15.1Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|24|-|ns|
|Turn-off delaytime|_t_d(off)||-|152|-|ns|
|Fall time|_t_f||-|24|-|ns|
|Turn-on energy|_E_on||-|1.60|-|mJ|
|Turn-off energy|_E_off||-|0.48|-|mJ|
|Total switchingenergy|_E_ts||-|2.08|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|78|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.28|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|24.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1294|-|A/µs|
V�2.1 2020-09-17
Datasheet
5
IKFW50N65EH5
## TRENCHSTOP[TM]
**==> picture [474 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
125 60<br>50 NE<br>100<br>\ |<br>6 i 40 \<br>75<br>O<br>7) PEN<br>B fo) 30 \<br>e5<br>: 50<br>20<br>. SERENE<br>25<br>Sannnew<br>10<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T h , HEATSINK TEMPERATURE [°C] T h , HEATSINK TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of heatsink Figure 2. Collector current as a function of heatsink<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ 15V, T j ≤ 175°C)<br>P tot I C<br>**----- End of picture text -----**<br>
**==> picture [469 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
120 120<br>VGE = 20V VGE = 20V<br>eee<br>100 100<br>18V 18V<br>Eat | x f<br>15V 15V<br>| 80 12V op 80 12V<br>10V 10V<br>eee |e | SS<br>8V 8V<br>y 60 (A 60<br>7V 7V<br>e) tt y Sf} /<br>20 6V | fe) 6V<br>40 5V 40 5V<br>3 622 =<br>i) .>a 3 .i(|<br>Gana an<br>20 20<br>W\ we<br>PRs LAN<br>0 AT \ | 0 Fi<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ j=25°C)
Figure 4. Typical ( _T_ j=175°C)
6
Datasheet
2020-09-17
IKFW50N65EH5
## TRENCHSTOP[TM]
**==> picture [490 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
120 !, 3.00<br>Tvj = 25°C IC = 20A<br>Tvj = 150°C IC = 40A<br>IC = 60A<br>= > = rot o<br>100 Zz2 o-<br>fe oa<br>x | llra 2.50 oe a<br>B 80 > --<br>WWw Ea -7chest<br>cc iw<br>a) Ww<br>ad 60 = 2.00 —<br>eS / in -"<br>oO / or -—<br>4 / O _-<br>FE -_-—<br>40<br>°=<br>Q<br>1.50 ——<br>20<br>/<br>7<br>a<br>ad<br>0 1.00<br>3.0 4.0 5.0 6.0 7.0 8.0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
Figure 6. Typical a function ( _V_ GE=15V)
**==> picture [471 x 331] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>td(off) td(off)<br>| tf a } tf ———<br>I td(on) es ee ee eee | td(on) a ee<br>tr | | | 1 tr =e<br>l e f ee<br>7wo 100 /a es ee) ” | a [ey | | | | lf<br>100<br>He [e] [s,]<br>Wwn aa a eee ee) eea<br>= po Pe a a<br>a a se a a ee re<br>a cae<br>ee ee<br>So - en aeee<br>et=. 10 rearr| | | lye=. 10 Pyea———————<br>a |}a — J<br>a Deee<br>es ee ee ee ee (es<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=15 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
Datasheet
7
2020-09-17
IKFW50N65EH5
## TRENCHSTOP[TM]
**==> picture [474 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 6.0<br>|1 td(off) aa ee a a ee ee typ.<br>I tf a ee ee ee eee _ 5.5 min.<br>I td(on) a ee max.<br>tr<br>| p o W<br>5.0<br>e eee<br>e e<br>ee ee 4.5 so<br>= 100 a es a roe<br>ip) po (e) ~ ~<br>im a a a 4.0<br>= CC® Pee ~sa<br>- es ee Wy SA<br>3.5<br>OQ a ee —™. ~<br><={ Fane -gL ‘<br>Ee E 3.0 =~ ISN<br>10<br>7 poa Ww 2.5 NX<br>ee ~L<br>a ee se x<br>a eseo) 2.0 ><br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
**==> picture [36 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 9.<br>**----- End of picture text -----**<br>
**==> picture [166 x 18] intentionally omitted <==**
**----- Start of picture text -----**<br>
(ind. load, V CE =400V, V GE =0/15V, I C=40A,<br>r G=15 , test circuit in Fig. E)<br>**----- End of picture text -----**<br>
Figure 10.
( _I_ C=0.4mA)
**==> picture [471 x 331] intentionally omitted <==**
**----- Start of picture text -----**<br>
8 6.0<br>Eoff / Eoff<br>Eon / Eon<br>7 = Ets / = Ets<br>/<br>/ 5.0 7<br>6 / ?<br>7) / 7) 4.0<br>5<br>—! 7 —! , 7<br>© / | 4 > ae _<br>i 4 ; i 3.0 A =<<br>Zz 7 Zz 2 i -”<br>WW J / uu 7 “7<br>g 3 / 7 y, g “ - -<br>2.0<br>5 iy /\ 3b ox =<br>e= fy J = 7 2 SS<br>° 2 L7ot 4 ° 1.0 rm|<br>1<br>¢ Se<br>7<br>Ss [=]<br>0 0.0<br>0 20 40 60 80 100 120 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=15 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
8
Datasheet
2020-09-17
IKFW50N65EH5
## TRENCHSTOP[TM]
**==> picture [474 x 679] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.5 2.5<br>¢<br>Eoff Eoff oo<br>Eon Eon ¢<br>Ets Ets<br>“= a yr<br>= = y 7<br>~~ 2.0 -* ~~ 2.0<br>£& on = x<br>n oer n “ Yo<br>Lu -- Lu ?<br>D -— Bo a“ 7<br>9 1.5 L_—_-— -— — o 1.5 ae 7<br>>-<br>O<br>ow _o- -_ O “ 7<br>im ow Y 7<br>ii -— uw 7<br>oO 1.0 ii 1.0 “| 7<br>Zz oO 4 7<br>L Zz= r 7<br>OO<br>EE<br>nn<br>0.5 0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(indload, V CE =400V, V GE =0/15V, I C=40A, (ind. load, T j =150°C, V GE =0/15V, I C=40A,<br>R G=15 , test circuit in Fig. E) R G=15 , test circuit in Fig. E)<br>16<br>V CC Cies<br>_—— V CC = 520V / 1E+4 H Coes [_—<br>14 / tt Cres aa eeee<br>_ L I S<br>m 12<br>) ~ _ 1000 EEE<br>i Le ee<br>— 10 / Qa a<br>ATT aEe<br>oc z A<br>E=: 8 / _S| 100 os1 ee“se ee<br>6<br>ul [ S A<br>ep 4 ee<br>10<br>a<br>2 a<br>0 1<br>0 20 40 60 80 100 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
9
Datasheet
2020-09-17
## IKFW50N65EH5
## TRENCHSTOP[TM]
**==> picture [483 x 626] intentionally omitted <==**
**----- Start of picture text -----**<br>
Ne 1 1 ee<br>Z eg TTT TT meet | ear |<br>Ww na ee RET cai el D = 0.5 Z ee eT te D = 0.5<br>O SS Sei RRR ee Ww Se CT<br>0.2 0.2<br>gO | | a) ll 1|<br>NTET eT TNAttn<br>0.1 0.1<br>0.05 0.05<br>eT Ae I CRC<br>= i<br>0.1 0.02 0.1 0.02<br>< 7 = m7 0am<br>= Ege 0.01 EC ee eee acy, ee ee ae 0.01 Eee<br>ow Poe ee = Se er oe<br>Lu CT ern eT single pulse CI I oe a single pulse CO CT<br>HAIL crim 1 THT Lu HATHA LeUR tv tani HI<br>AE: tH 1 = Ml<br>: ai CMH MURTAGH : tte AU OAIaQvO AA A<br>0.01 A 0.01 Ch<br>~¢ YT ii an ' 2 Pa ~¢ | ' 2 il<br>eT | | 1 A | Il<br>oc° EEEPIL Hali l oc avec ty Hy<br>ATE ETI TTI TT] cist Co=reiRe {II} PTI TAA TT TTT TE cree Co=telRe Il<br>PLAT i: 1 COTUTE 2 TCT 3 4 TM 5 TTT 6 TTT 7 TTT i: PTTSe 1 Wi0 2 TTT 3 TTT 4 TE 5 TTT 6 TTT 7 TTT<br>ri[K/W]: 5.6E-3 0.17127 0.2189 0.22913 0.33902 0.20383 0.017292 ri[K/W]: 0.014102 0.20405 0.25828 0.2365 0.33792 0.20262 0.01719<br>τ i[s]: 2.0E-5 2.9E-4 2.8E-3 0.023225 0.288506 1.294172 18.69894 τ i[s]: 2.6E-5 3.0E-4 2.7E-3 0.022941 0.288184 1.292329 18.70911<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal impedance as a Figure 18. Diode transient thermal impedance as a<br>function of pulse width function of pulse width<br>( D = t p/T) ( D = t p/T)<br>100 3.0<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 150°C, IF = 40A Tvj = 150°C, IF = 40A<br>80 \ Oo 2.5<br>T TT ET ey<br>Ww= S ce<br>2.0<br>2:<br>> 60 Oo<br>9 — 5 1.5<br>WwPlo9) 40 aeeR=> oLu<br>1.0 oo<br>oe: —<br>a<br>20<br>; TEL ELEL<br>0.5<br>0 0.0<br>800 900 1000 1100 1200 1300 1400 1500 1600 1700 800 900 1000 1100 1200 1300 1400 1500 1600 1700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>h)th(j- h)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19. Typical of diode ( _V_ R=400V)
Figure 20.
( _V_ R=400V)
10
Datasheet
2020-09-17
IKFW50N65EH5
## TRENCHSTOP[TM]
**==> picture [489 x 643] intentionally omitted <==**
**----- Start of picture text -----**<br>
40 0<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 150°C, IF = 40A Tvj = 150°C, IF = 40A<br>-500<br><,<br><x Zz ||<br>ke 30 \<br>i / 's} \<br>& : -1000 .<br>2 “7 z—! \<br>o-<br>20 -1500<br>Ww:p= : .\<br>: x N.<br>wi<br>Ww - \<br>D oO -2000<br>ff 10 O<br>-2500<br>| LAL ED |<br>0 -3000<br>800 900 1000 1100 1200 1300 1400 1500 1600 1700 800 980 1160 1340 1520 1700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>120 2.50<br>Tvj = 25°C IF = 20A<br>110 f=U Tvj = 150°C e IF = 40A<br>2.25 IF = 60A<br>100<br>90 2.00<br>80 Ww<br>= "| 1.75 ee<br>“ 70 EF<br>.><br>s3 60 | [Pf] | QSS 1.50<br>Q 50 Pf P| |<br>$ =<br>1.25<br>er (e)<br>40<br>e/a fo<br>30 1.00<br>/ = | [[7]<br>20<br>0.75<br>10<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
11
Datasheet
2020-09-17
IKFW50N65EH5
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �5�Advanced�Isolation
## **PG-HSIP247-3-2**
**==> picture [431 x 640] intentionally omitted <==**
**----- Start of picture text -----**<br>
MILLIMETERS MILLIMETERS<br>DIMENSIONS DIMENSIONS<br>MIN. MAX. MIN. MAX.<br>A - 5.18 e 5.44<br>A1 4.70 4.90 E 15.70 15.90<br>A2 2.16 2.66 E1 13.68 13.88<br>DOCUMENT NO.<br>A3 0.20 0.28 E2 (6.00)<br>Z8B00195711<br>A4 1.30 1.50 E3 3.24 3.44<br>A5 0.31 0.51 E4 4.39 4.59 REVISION<br>A6 1.70 1.90 E5 (1.45) 01<br>A7 (0.25) E6 0.76 0.96<br>b 1.10 1.30 L 18.01 18.21 SCALE 3:1<br>b1 (2.88) L1 2.26 2.46 0 1 2 3 4 5 6 7 8mm<br>b2 (1.60) L2 1.50 1.70<br>b3 - 0.15 P 3.50 3.70<br>c 0.50 0.70 P1 5.70 5.90 EUROPEAN PROJECTION<br>D 22.70 22.90 Q 6.06 6.26<br>D1 16.96 17.16<br>D2 2.34 2.54<br>D3 - 0.30<br>ISSUE DATE<br>D4 4.35 4.55<br>28.06.2019<br>D5 19 70 19 90<br>**----- End of picture text -----**<br>
12
V�2.1 2020-09-17
Datasheet
IKFW50N65EH5
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
13
V�2.1 2020-09-17
Datasheet
IKFW50N65EH5
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Revision�History**
IKFW50N65EH5
## **Revision:�2020-09-17,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2020-09-17|Final Data Sheet|
14
V�2.1 2020-09-17
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →