Image not available
Illustrative purposes only
IKFW50N60DH3XKSA1
IGBT, 53 A, 1.85 V, 145 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 145W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 53A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.42 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKFW50N60DH3
## TRENCHSTOP[TM]
## **Features:**
**==> picture [187 x 61] intentionally omitted <==**
**----- Start of picture text -----**<br>
vj<br>* Positive temperature coefficient in V CE(sat)<br>« Low EMI<br>* Very soft, fast recovery anti-parallel diode<br>* Maximum junction temperature 175°C<br>*2500V RMS — electrical isolation, 50/60 Hz, t<br>**----- End of picture text -----**<br>
http://www.infineon.com/igbt
**==> picture [95 x 203] intentionally omitted <==**
**----- Start of picture text -----**<br>
C<br>G<br>E<br>ces<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKFW50N60DH3|600V|40A|1.85V|175°C|K50DDH3|PG-TO247-3-AI|
Datasheet www.infineon.com
2017-09-21
IKFW50N60DH3
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Advanced�Isolation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
2
V�2.1 2017-09-21
Datasheet
IKFW50N60DH3
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Advanced�Isolation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C<br>_T_h=65°C|_I_C||53.0<br>44.0<br>60.01)|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°Cvaluelimitedbybondwire<br>_T_h=65°C|_I_F||40.0<br>32.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||145.0<br>106.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|0.88|1.03|K/W|
|Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.75|1.92|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
> 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier insulator
> 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
> 3) At force on body F = 500N, Ta = 25ºC
3
V�2.1 2017-09-21
Datasheet
IKFW50N60DH3
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Advanced�Isolation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.85<br>2.25|2.30<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.40|1.75<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.58mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>600|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|17.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2293|-|pF|
|Output capacitance|_C_oes||-|94|-||
|Reverse transfer capacitance|_C_res||-|62|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=40.0A,<br>_V_GE=15V|-|210.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|235|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=75nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|25|-|ns|
|Rise time|_t_r||-|35|-|ns|
|Turn-off delaytime|_t_d(off)||-|212|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|1.22|-|mJ|
|Turn-off energy|_E_off||-|0.61|-|mJ|
|Total switchingenergy|_E_ts||-|1.83|-|mJ|
V�2.1 2017-09-21
Datasheet
4
IKFW50N60DH3
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Advanced�Isolation
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|64|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.51|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-840|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=75nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns|
|Rise time|_t_r||-|34|-|ns|
|Turn-off delaytime|_t_d(off)||-|246|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|1.73|-|mJ|
|Turn-off energy|_E_off||-|0.81|-|mJ|
|Total switchingenergy|_E_ts||-|2.54|-|mJ|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|103|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.24|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|17.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-502|-|A/µs|
V�2.1 2017-09-21
Datasheet
5
IKFW50N60DH3
## TRENCHSTOP[TM]
**==> picture [262 x 290] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>a<br>PT ATTTT<br>ey<br>_ Y A | _<br>not for linear use<br>€ | [f] [il][e] [)]<br>nrxe 10 aAU2 Lee U ee ee ee Sii<br>i ee ee at<br>ee ee<br>ad aee<br>O eee ll o<br>i<br>SLAM 1<br>O ELUM LI<br>BBEa 0 2 ee ee ee ~.<br>EE<br>a ee<br>ee| ee<br>omic<br>0.1<br>1 10 100 = 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area<br>( D =0, T h =25°C, T j 175°C, V GE =15V, t p ≤ 1µs)<br>I C P tot<br>**----- End of picture text -----**<br>
**==> picture [234 x 290] intentionally omitted <==**
**----- Start of picture text -----**<br>
140120 Nee<br>_<br>100<br>Sii Nae\<br>80<br>o \<br>60 \\<br>~. 40 Pf) fN<br>\<br>20 Pf) ft |X\<br>0<br> [IN 25 50 75 100 125 150 175<br>T h , HEATSINK TEMPERATURE [°C]<br>Figure 2. Power dissipation as a function of heatsink<br>temperature<br>( T j ≤ 175°C)<br>tot<br>P<br>**----- End of picture text -----**<br>
**==> picture [489 x 332] intentionally omitted <==**
**----- Start of picture text -----**<br>
60 160<br>TO247 Advanced Isolation<br>TO247 with insulator film (using same chip)<br>140 VGE=20V<br>50<br>17V<br>120 15V<br>E 40 NE 13V<br>:2EL 100 RY<br>11V<br>e N X Z SOSA) ——<br>9V<br>| N/A<br>30 80<br>3 aN 3 RNa)/<br>7V<br>2 SON 2 /<br>5V<br>60<br>= . \ = We<br>20<br>SAE LY<br>40<br>\ Ws<br>HK)<br>10<br>20<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T h , HEATSINK TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of heatsink Figure 4. Typical output characteristic<br>temperature ( T j=25°C)<br>( V GE ≥ 15V, T j ≤ 175°C, insulator film: 152yum,<br>1.3W/mK)<br>I C I C<br>**----- End of picture text -----**<br>
6
Datasheet
2017-09-21
IKFW50N60DH3
## TRENCHSTOP[TM]
**==> picture [471 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
160 160<br>Tvj = 25°C<br>Tvj = 175°C<br>140 VGE=20V 140<br>17V<br>x 120 15V13V / VA < 120 /<br>Pai 100 Tt/ / Pai 100<br>ia: 11V — / / iae<br>9V<br>SL LN :<br>80 80<br>7V<br>fe) \ 4 fe)<br>ONG, 5V C4( ee<br>I 60 \ML OI 60 /<br>S \W/N S<br>° eo °<br>40 40<br>WS ee ee<br>y \ /<br>20 20<br>|A<br>0 0<br>0 1 2 3 4 5 6 7 8 4 6 8 10 12 14 16<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ j=175°C)
Figure 6. Typical ( _V_ CE=20V)
**==> picture [471 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
4.0 1000 a SS SS ES ES<br>IC = 20A i td(off) a a<br>IC = 40A tf<br>S 3.5 | = IC = 80A |I ttd(on)r Ee eeee<br>= ue | i<br>6 e e<br>3.0<br>> _- ry<br>Ee -- — 100 a<br>Bee<br>PA0 2.5 n eeee en eccae<br>nT uw= a a erPeee<br>- - a ee<br>= 2.0 Q: aeee e e ce ee<br>ee<br>1.5<br>° ao LEE<br>10<br>I - a ee<br>re)3O 1.0 aaeea ee ee<br>= a Deee<br>0.5<br>Pf ft | hc] |<br>0.0 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V)=15V) (ind. load, T j =175°C, V CE =400V, V GE=0/15V,<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)=15V)
_R_ G=8
Datasheet
7
2017-09-21
## IKFW50N60DH3
## TRENCHSTOP[TM]
**==> picture [474 x 331] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>1000 ttd(off)f _ |1 a ttd(off)f aaa aaee ee a<br>td(on) td(on)<br>SS tr ——— ee tr<br>SS : eea es I a<br>a es ee<br>£ £ 100 a as<br>100<br>= aee a Ma (a<br>cc<br>> eco i (OE Snes Ces meseee<br>=r a| aeeetee <—h =r><br>a i a e e Se eee<br>foeee="]<br>SO eee eee<br>= | | =<br>2)° 10 2). 10 a eS<br>a a<br>ES<br>a a a eeee<br>a ee ee ee ee ss ss<br>[4] a ee ee<br>a poof |<br>1 1<br>0 10 20 30 40 50 60 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=0/15V, (ind. load, V CE =400V, V GE =0/15V, I C=40A,<br>I C =40A, test circuit in Fig. E) r G=8 , test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
**==> picture [471 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
6 8<br>typ. Eoff<br>min. Eon<br>max. 7 Ets<br>=. -_ c a =<br>Lu in vA<br>a 5 ~~ £ 6 /<br>S “AL W /<br>fe) Pw SA n /<br>s ™ ‘t B ‘<br>a) > SS (e) 5 f<br>7) > 4<br>Lu O 72 7<br>-w 4 ~~\ ~ ~ Iw ZzLu 4 , Fa 7<br>Ww ~ oO 7 7<br>EF ~ Zz 3 a<br>Ss ~ = ’ 7<br>in1 ~ ~ FEo 4 cols<br>3 r (op) 2<br><x ~ - Ole<br>S i Ay i<br>1 “Ue am<br>ee<br>2 0<br>25 50 75 100 125 150 0 10 20 30 40 50 60 70 80<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.58mA) (ind. load, T j =175°C, V CE =400V, V GE=0/15V,<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
_R_ G=8
8
Datasheet
2017-09-21
## IKFW50N60DH3
## TRENCHSTOP[TM]
**==> picture [474 x 679] intentionally omitted <==**
**----- Start of picture text -----**<br>
8 3.0<br>Eoff Eoff<br>Eon Eon<br>7 Ets ¢ 7 Ets<br>v 2.5 ><br>i co — -"<br>6<br>n v n aa!<br>Ww , Ww<br>io) ¢ io) 2.0<br>O 5 £ z| O<br>—!>© YY 7 7 >© _— _—<br>x 4 ne a x 1.5 L ~<br>fi a a fi ae<br>2 3 “| ode 2 0 -<br>1.0<br>¢<br>eee 2<br>0.5<br>ee<br>1<br>0 0.0<br>0 10 20 30 40 50 60 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=0/15V, (indload, V CE =400V, V GE =0/15V, I C=40A,<br>I C =40A, test circuit in Fig. E) R G=8 , test circuit in Fig. E)<br>4.0 16 P|<br>Eoff — V CC =120V /<br>Eon —- V CC =480V /<br>3.5 Ets 14 a| Ve<br>3.0 12<br>op) : aT} / /<br>Ww ” ro}<br>io) a<br>aa]g 2.5 ? y :~ 10 [if<br>Ww4z 2.0 “7 ao 2 oo th== 8 +4<br>Lu ¢? a ==<br>z 1.5 2 a ul 6<br>x 7 ¢ a E<br>1.0 4<br>a<br>: <|__— :<br>0.5 2<br>0.0 0<br>200 250 300 350 400 450 500 0 30 60 90 120 150 180 210 240<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=40A)<br>(ind. load, T j =175°C, V GE =0/15V, I C=40A,<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
**==> picture [22 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
R G=8<br>**----- End of picture text -----**<br>
9
Datasheet
2017-09-21
IKFW50N60DH3
## TRENCHSTOP[TM]
**==> picture [489 x 679] intentionally omitted <==**
**----- Start of picture text -----**<br>
500<br>Cies<br>1E+4 Coes<br>Cres 450<br>1 2 | a——EEEes x= TITTY<br>p o 400 /<br>L a Oo 350 |<br>ce ag WiVA<br>1000 a<br>Lu y<br>2O ———————arTa 300 VA<br>E<br>°a EeaNo ffer 250 / /y<br>oO O<br>. 200<br>100 a<br>PE<br>EE= ee | (e) eee<br>—= a ieeee I 150 Y, /<br>|<br>100<br>10 50<br>0 10 20 30 10 12 14 16 18 20<br>V CE ,COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE AOOV, start at T j=25°C)<br>14<br>1<br>_ tHE Ere<br>= =<br>z 12 SH ae<br>2 ee “i<br>WwETINTLLLINFN ff ff} dy Oile) MEURHee TTmS| Ue eaelTTT D = 0.50.20.1 TTI<br>10<br>Z Tl<br>2a |) NO)~ 28) 0.1 UILeete 0.05 Il<br>0.02<br>x \ = SS 2 A a<br>E NX z Snes Cot ee 0.01<br>= 8 Ns S meee LY) // tl CT Th<br>single pulse<br>: S Y PTT ae ren Ter mil<br>S Pt f | | | RO ulZz Ee aE nll<br>= 6 rT PP eS |NO IE A<br>©= Siteep) 0.01 TP—am f AC<br>Tr s |) | —— Th<br>nO = BL BAMHI}<br>- 4 PTPT ty)tyyyyy)ddddddd : i: PLAC CAT AME 1 CM 2 TAIT 3 FTAt 4 CCC 5 cthies_ca=taine oon 6 ot 7 oll Ill<br>ri[K/W]: 3.0E-3 0.104852 0.13662 0.1914 0.26906 0.3091 0.022616<br>τ i[s]: 1.6E-5 2.6E-4 2.2E-3 0.018514 0.201746 0.902516 15.90837<br>2 0.001<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal impedance as a<br>gate-emitter voltage function of pulse width<br>( V CE 400V, start at T j 150°C) ( D = t p/T)<br>C<br>I C(SC)<br>t SC h)th(j-<br>Z<br>**----- End of picture text -----**<br>
10
Datasheet
2017-09-21
IKFW50N60DH3
## TRENCHSTOP[TM]
**==> picture [482 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
250<br>Tvj = 25°C, IF = 20A<br>Tvj = 175°C, IF = 20A<br>ee fF 4 ] . |<br>ee 1 eee |<br>— PT Tn TT Arr 11 ||| 200<br>D = 0.5<br>WwW EC eee = \<br>Ss)z EEST ATTT TT7” 0.2 He 7= \<br>0.1<br>oO f 0.05<br>150<br>0.1 | 0.02 Ml<br>ES Feet 0.01 Cet) Ne eee<br>wa CC ne ee (oe)<br>WwWx COaEFe AeALN TTiGAaTUl1DCaP single pulse 0TT | ayWw<br>100<br>: mmm ae Hil a PIN<br>aaa ee aNR ~ —<br>2 0.01 0 0 040230 00 S<br>< oe fl Palla R R ii iu —__ |<br>i. EeCCFapeeueIAIeeeet CeTT . tHyt nm t |—| . 50 e e<br>UTI ITI Cer: Co=te/Re ||<br>pf [{A] [PLAL] i: TTICU 1 TIE 2 IMT 3 TT 4 TTT 5 TT 6 T Pt<br>ri[K/W]: 0.341 0.56903 0.28633 0.34265 0.36597 0.023397<br>τ i[s]: 2.5E-4 1.6E-3 0.013093 0.158585 0.778817 15.94388<br>0.001 0<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 200 400 600 800 1000 1200<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>h)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 21.
( _D_ = _t_ p/T)
Figure 22.
( _V_ R=400V)
**==> picture [490 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.6 LE 24 LE<br>Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>Tvj = 175°C, IF = 20A Tvj = 175°C, IF = 20A<br>1.4 Ee 21<br>| (Ee - ao<br>= -<br>WW 1.2 = 5 18 L<br><x w a<br>L a)<br>O 1.0 O 15<br>= [z] “<br>w 0.8 i 12 /<br>fy Ww<br>0.6 9<br>eee eee eee<br>Ww Ww<br>0.4 6<br>0.2 Pf | fl 3 mT TP<br>0.0 0<br>200 400 600 800 1000 1200 200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 23. Typical function ( _V_ R=400V)
Figure 24.
( _V_ R=400V)
11
Datasheet
2017-09-21
IKFW50N60DH3
## TRENCHSTOP[TM]
**==> picture [470 x 643] intentionally omitted <==**
**----- Start of picture text -----**<br>
0 120<br>Tvj = 25°C, IF = 20A Tvj = 25°C<br>-100 Tvj = 175°C, IF = 20A Tvj = 175°C<br>100<br>-200<br>ed . j<br>-300 =<<br>fe)LL eee => |<br>80<br>LLLL2] -400 IX |eWW“<br>LuPf AA oO<br>Kk -500 60 |<br><x Q<br>a om<br>-600<br>o O<br>40<br>Wwraef: -700 KL\ 8LL_ /<br>BAR<br>-800<br>20<br>-900<br>aw fy<br>4<br>-1000 0<br>200 400 600 800 1000 1200 0 1 2 3 4<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Figure 25. Typical diode peak rate of fall of reverse Figure 26. Typical diode forward current as a<br>recovery current as a function of diode of forward voltage<br>current slope<br>( V R=400V)<br>2.00<br>IF = 10A<br>IF = 20A<br>IF = 40A<br>1.75<br>Ww<br>4<br>ke<br>I<br>><br>Q 1.50<br>aa<br><x<br>x<br>LL<br>1.25<br>i<br>1.00<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
12
Datasheet
2017-09-21
IKFW50N60DH3
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Advanced�Isolation
## **PG-TO247-3-AI (PGHSIP2473)**
**==> picture [408 x 570] intentionally omitted <==**
**----- Start of picture text -----**<br>
MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A - 5.18 DOCUMENT NO.<br>A1 4.70 4.90 Z8B00186434<br>A2 2.23 2.59 REVISION<br>A3 0.20 0.28 02<br>b 1.10 1.30<br>c 0.50 0.70 SCALE 3:1<br>D 22.20 22.40 0 1 2 3 4 5 6 7 8mm<br>D1 16.96 17.16<br>E 15.70 15.90<br>E1 13.68 13.88 EUROPEAN PROJECTION<br>e 5.44<br>L 18.31 18.91<br>L1 2.76 2.96<br>øP 3.50 3.70<br>øP1 5.70 5.90 ISSUE DATE<br>Q 5.96 6.36 05.06.2018<br>**----- End of picture text -----**<br>
Note: For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC6006826 and IEC60068227). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of <20µm per 100mm and roughness of <10µm.
13
V�2.1 2017-09-21
Datasheet
IKFW50N60DH3
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Advanced�Isolation
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
V�2.1 2017-09-21
Datasheet
IKFW50N60DH3
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Advanced�Isolation
## **Revision�History**
IKFW50N60DH3
## **Revision:�2017-09-21,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-09-21|Final data sheet|
15
V�2.1 2017-09-21
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →