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IKFW50N60DH3EXKSA1
IGBT, 40 A, 2.2 V, 130 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 3
- Power Dissipation: 130W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.2V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.11 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKFW50N60DH3E
## TRENCHSTOP[TM]
## **Features:**
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vj<br>* Positive temperature coefficient in V CE(sat)<br>« Low EMI<br>* Very soft, fast recovery anti-parallel diode<br>* Maximum junction temperature 175°C<br>*2500V RMS — electrical isolation, 50/60 Hz, t<br>**----- End of picture text -----**<br>
http://www.infineon.com/igbt
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C<br>G<br>E<br>ces<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKFW50N60DH3E|600V|40A|2.2V|175°C|K50DDH3E|PG-TO247-3-AI|
Datasheet www.infineon.com
2017-09-21
IKFW50N60DH3E
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKFW50N60DH3E
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°Cvaluelimitedbybondwire<br>_T_h=65°C<br>_T_h=65°C|_I_C||40.0<br>37.0<br>60.01)|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°Cvaluelimitedbybondwire<br>_T_h=65°C|_I_F||40.0<br>29.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||130.0<br>95.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|0.98|1.15|K/W|
|Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.96|2.16|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
> 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier insulator
> 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
> 3) At force on body F = 500N, Ta = 25ºC
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.80|2.70<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.45|1.90<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.43mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>440|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|15.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1704|-|pF|
|Output capacitance|_C_oes||-|73|-||
|Reverse transfer capacitance|_C_res||-|48|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=40.0A,<br>_V_GE=15V|-|160.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|166|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=75nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|39|-|ns|
|Turn-off delaytime|_t_d(off)||-|174|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|1.28|-|mJ|
|Turn-off energy|_E_off||-|0.56|-|mJ|
|Total switchingenergy|_E_ts||-|1.84|-|mJ|
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## TRENCHSTOP[TM] �Advanced�Isolation
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|64|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.51|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-840|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=75nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|37|-|ns|
|Turn-off delaytime|_t_d(off)||-|200|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|1.75|-|mJ|
|Turn-off energy|_E_off||-|0.73|-|mJ|
|Total switchingenergy|_E_ts||-|2.48|-|mJ|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|103|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.24|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|17.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-502|-|A/µs|
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IKFW50N60DH3E
## TRENCHSTOP[TM]
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140<br>oo<br>120 \<br>\<br>100 PNP pd pd<br>\<br>80<br>\<br>\<br>60 \\\<br>40<br>20<br>|<br>0<br>| EN<br>25 50 75 100 125 150 175<br>T h , HEATSINK TEMPERATURE TEMPERATURE [°C]<br>Figure 2. Power dissipation as a function of heatsink<br>temperature<br>( T j ≤ 175°C)<br>**----- End of picture text -----**<br>
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100<br>PZT 120 \<br>a<br>a YA \<br>_~e€ ee OEe not for linear use e l 100 PNP pd pd<br>ef | f l— t t ty)<br>10 PUT T IN<br>i Ly 8 \<br>na5 eea| 0 2 eee ee ieje)oa 80 \<br>adO a i eee \<br>O eee ll o 60<br>a e)<br>i \\\<br>8 1 LUT<br>40<br>UII LUM<br>PotET<br>a ee<br>eee ll<br>20<br>CoM |<br>0.1 0<br>| EN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T h , HEATSINK TEMPERATURE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of heatsink<br>( D =0, T h =25°C, T j 175°C, V GE =15V, t p ≤ 1µs) temperature<br>( T j ≤ 175°C)<br>45 120<br>TO247 Advanced Isolation<br>TO247 with insulator film (using same chip) 110<br>a<br>40 | ee eee VGE=20V /<br>100<br>17V eyA<br>35<br>90 15V<br><x <x<br>30 80 13V<br>efaXf:\bE Effe<br>e 11V<br>o 70<br>SS \ oe = Hf/ J<br>25<br>9V<br>3 N \ 3 60 e/a,<br>so SL [Na] 7V<br>20<br>50<br>5V<br>RNG Leen<br>3 15 s a 40 PF \ALYo——<br>30<br>10<br>20<br>5<br>aAN<br>10<br>ee ee \ aL- X<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T h , HEATSINK TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Collector **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 0.9W/mK)
Figure 4. Typical ( _T_ j=25°C)
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IKFW50N60DH3E
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
120 120<br>Tvj = 25°C<br>= Tvj = 175°C //<br>VGE=20V<br>100 | 100<br>17V<br>15V _~ [ /| _ [i<br>= /; / /<br>: 80 13V S OSL]TIL, =: 80<br>i 11V TN DY, i<br>ia [7 ia<br>9V<br>: WH :<br>60 60<br>s ~ TH, | 8 [<br>7V<br>O 5V OKT | E<br>: "Uf O<br>8 40 7YSmLo : 40<br>| ——| 8<br> NEYane<br>20 20<br>) A nn »<br>0 0<br>0 1 2 3 4 5 6 4 6 8 10 12 14 16<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ j=175°C)
Figure 6. Typical ( _V_ CE=20V)
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5.0 se<br>iaa<br>IC = 20A I td(off) a<br>IC = 40A tf<br>4.5 IC = 80A td(on)<br>S - | tr PE<br>pT )<br>4.0<br>: | ee} B ee<br>100<br>ae titi tye<br>7A)<x 3.5 S “7 _a) aa SOeekd cs<br>w ped ~ a re cn<br>WE 3.0 °weet =O ecPN<br>z et<br>° 2.5 ee eee<br>apo Te (wey<br>o -_ _ 10 |<br>oI a ~ =~ poa<br>5 a<br>2.0<br>eee<br>1.5<br>1.0 1<br>Piety yy EEE<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (ind. load, T j =175°C, V CE =400V, V GE=0/15V,<br>R G=8 , test circuit in Fig. E)<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Datasheet
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IKFW50N60DH3E
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1000 aa 1000<br>| i td(off) re ee ee eee | td(off) a ee ee ee<br>I tf re ee i tf a<br>I td(on) a =e eee eee I td(on) a eeee<br>tr tr<br>| a eee eee I a eeee<br>a a | po<br>P OO P t<br>oe e e<br>= 100 a se eh = 100 a as<br>ip)im poea se LL, ee ip) a e eseees ee<br>= a a PPh a a<br>OQ- a a a eeeeeees ee = aaaa ee a a ee ee ee<br>a ace ee<br>E E<br>=e<br>2)7 10 aa eS 2)7 10 a eS<br>po a ee es<br>a<br>aaee se a ee<br>a<br>1 1<br>0 10 20 30 40 50 60 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=0/15V, (ind. load, V CE =400V, V GE =0/15V, I C=40A,<br>I C =40A, test circuit in Fig. E) r G=8 , test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
6 | 8<br>typ. Eoff<br>— ss min. Eon /<br>max. 7 Ets<br>w hoe /<br>— 5 “>. E 6<br>> cS wi 4<br>_4 ™ > se nD /ely<br>re) > x, oO 5 4<br>ty= oN SS, SG}S / ’ /<br>ce7 4 = ™™ eS ianm 4 “| 7<br>FEw ~ ~ ~ NI LuZz 7 7<br>im ~ O /<br>EF ~ 2 3 fy<br>E ~ I 4<br>=O<br>& 3 2<br>a r 5 ~ Z SS<br>¢?<br>1 oa 4 a<br>Lo<br>=<br>man<br>2 0<br>25 50 75 100 125 150 0 10 20 30 40 50 60 70 80<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction junction temperature function of collector current<br>( I C=0.43mA)=0.43mA) (ind. load, T j =175°C, V CE =400V, V GE=0/15V,<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. Gate-emitter of junction junction ( _I_ C=0.43mA)=0.43mA)
_R_ G=8
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IKFW50N60DH3E
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
7 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>6<br>2.5<br>a“a<br>7<br>op) 5 -"<br>nm ¢ op)<br>7) ¢ 7 7)nm 2.0<br>> 4 ba¢ cv} s --<br>a _—<br>WwW ? 7 WwW 1.5<br>Gi “ a Gi __ — -_<br>oOz 3 7y af oOz<br>O“ 7 O 1.0<br>2<br>ae Ss a<br>Bp 1 ——_| era 0.5 |<br>0 0.0<br>0 10 20 30 40 50 60 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=0/15V, (indload, V CE =400V, V GE =0/15V, I C=40A,<br>I C =40A, test circuit in Fig. E) R G=8 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
4.0 16<br>Eoff V CC<br>Eon —- V CC =480V<br>3.5 E Ets lo} 14 Esees<br>3.0 ¢? qu. 12<br>a] 2.5 77 |I 10<br>g < : ay A<br>a<br>teZz 2.0 “ oo | & 8 rye} | |<br>Lu “ 7 E<br>9 a a S<br>1.5 6<br>=r a a ud<br>2 oL-y? a 7 ziHU<br>=“"<br>nel 1.0 a 4<br>0.5 2<br>ee ee<br>0.0 0<br>200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 160 180<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=40A)<br>(ind. load, T j =175°C, V GE =0/15V, I C=40A,<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
R G=8<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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400<br>Ciesies<br>1E+4 Coesoes<br>Cresres<br>2 < SITTER<br>a ee ee -_ 350 7<br>e e ee Zz<br>a OT y,<br>300<br>ee ee ee Z<br>7 a A es O /<br>Lu 1000 |aa o<br>O a Oo 250 y<br>z a ee<br>FE a (©)<br>Qo J J<br>200<br>|xx ==)=)<br>100 aeseese oO 150 VW /<br>a ce)<br>esee aeee ae ae ee<br>100<br>10 50<br>0 10 20 30 10 12 14 16 18 20<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 400V, start at T j=25°C)<br>14<br>PTT TE ET TT 1 UIT<br>= = i |<br>2_ g 12 Ff ff ff fl} yy | _ aEtee ee eee D = 0.5 TItt<br>2 INF ff ff} dy i CH a |eeeLL tT 0.2<br>= N SHEx Lig elt<br>0.1<br>10<br>Z \ ee 0.1 0.05 I II<br>2aIr fT] |NTT).N NX 1é=a BeenFEaHgnti a ee 0.02<br>= ~¢ gy CO<br>0.01<br>= 8 Pt ff |X] Ly | S TN Ta TTT CT Th<br>= < na I | ar TT mill<br>single pulse<br>Sn ee a<br>= Zz<br>3Oo 6 ep SoIN -Ww Bi 2a THETA<br>° Ste ACAI<br>0.01<br>Tr YT TT Ti —— Th<br>nO = | BAMHI}<br>- 4 PTPT ty)tyyyyy)ddddddd - FCF AI UA i: 1 ETT 2 OT 3 TTI ooo 4 CCC 5 che, 6 ce=tire 7 _|Ill<br>ri[K/W]: 4.1E-3 0.13618 0.19283 0.21714 0.27071 0.30778 0.022418<br>τ i[s]: 1.8E-5 2.6E-4 2.2E-3 0.017983 0.200473 0.9009 15.9185<br>2 0.001<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>C<br>I C(SC)<br>t SC h)th(j-<br>Z<br>**----- End of picture text -----**<br>
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Ciesies<br>1E+4 Coesoes<br>Cresres<br>2 <<br>a ee ee -_<br>e e ee Zz<br>a OT<br>ee ee ee<br>7 a A es O<br>Lu 1000 |aa o<br>O a Oo<br>z a ee<br>FE a (©)<br>Qo J<br>|xx ==)=)<br>100 aeseese oO<br>a ce)<br>esee aeee ae ae ee<br>10<br>0 10 20 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>I C(SC)<br>**----- End of picture text -----**<br>
Figure 19. Short circuit withstand time gate-emitter voltage ( _V_ CE 400V, start at _T_ j 150°C)
Figure 20.
( _D_ = _t_ p/T)
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## TRENCHSTOP[TM]
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250<br>Tvj = 25°C, IF = 20A<br>Tvj = 175°C, IF = 20A<br>TAHITI TET 2 See ee<br>1 eee Ll<br>N4— eePT Tn 7 11 ||| 200 \<br>Lu SEE Ra 2 D = 0.5 =<br>zO TE?Senuiesee = -aoll7/ AN All ON 0.2 Vo TD \\<br>0.1<br>f 0.05 ><br>150<br>= 0.1 UI 0.02 HM)<br>0.01<br><= FeeSee ang ane/ At Ee A Cet) (oe) PNIN<br>oe COT Cae TTL ea Co \ -<br>uw PT TM AMT CM Tone single pulse vim rH uw ~~.<br>Fe: BatTT a eeAN POO MUIVQU A1 a2 100 \ NS ~~<br>:a 0.01 eMC) & | Na<br>= HtZe a<br>e eh te a ee -——__<br>orn ean Hl<br>F 8 FRrer GHG Hy 50 ee ee<br>. TATTT LON ATT TIME MIE CTT NM PE] TE Cir TTT Ca=re/Re TTT TTT il Pt<br>P| {| i: 1 2 3 4 5 6<br>ri[K/W]: 0.42614 0.70609 0.32538 0.32296 0.36223 0.023287<br>τ i[s]: 2.3E-4 1.4E-3 0.012128 0.160012 0.781857 15.94134<br>ae<br>0.001 0<br>es ee ee eeeee<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 200 400 600 800 1000 1200<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>h)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 21. Diode function ( _D_ = _t_ p/T)
Figure 22. Typical of diode ( _V_ R=400V)
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1.4 LE 18 LE .<br>Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>Tvj = 175°C, IF = 20A Tvj = 175°C, IF = 20A a<br>16<br>1.2<br>_ _- _ 7<br>14<br>Lu keZz<br>1.0<br>oe 12 ><br>2 0.8 10<br>o 0.6 S 8 ZO<br>e 2 6 Z|<br>i 0.4 —T_[ i<br>or 07 4<br>0.2<br>2<br>0.0 0<br>200 400 600 800 1000 1200 200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 23. Typical function ( _V_ R=400V)
Figure 24.
( _V_ R=400V)
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## TRENCHSTOP[TM]
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0 LE 120 LY /<br>Tvj = 25°C, IF = 20A Tvj = 25°C<br>Tvj = 175°C, IF = 20A Tvj = 175°C<br>-100<br>EO) =| ;<br>oYz _ 100 / /i<br><= \ | | /<br>-200<br>= -300 \ E 80<br><x Zz /<br>mh Wy /<br>5 -400 Po or /<br>Kk 60<br>© -500 So ‘~= ra<br><x\ =<<br>a<br>-600 40<br>Ww \ ©_ /<br>ra LL |<br>-700<br>20<br>-800<br>aa<br>-900 0<br>200 400 600 800 1000 1200 0 1 2 3 4<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
2.00<br>IF = 10A<br>IF = 20A<br>IF = 40A<br>1.75<br>m7<br>4<br>ke<br>I<br>><br>a 1.50<br>ind<br><x<br>ow<br>LL<br>1.25<br>ee<br>1.00<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
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## TRENCHSTOP[TM] �Advanced�Isolation
## **PG-TO247-3-AI (PGHSIP2473)**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A - 5.18 DOCUMENT NO.<br>A1 4.70 4.90 Z8B00186434<br>A2 2.23 2.59 REVISION<br>A3 0.20 0.28 02<br>b 1.10 1.30<br>c 0.50 0.70 SCALE 3:1<br>D 22.20 22.40 0 1 2 3 4 5 6 7 8mm<br>D1 16.96 17.16<br>E 15.70 15.90<br>E1 13.68 13.88 EUROPEAN PROJECTION<br>e 5.44<br>L 18.31 18.91<br>L1 2.76 2.96<br>øP 3.50 3.70<br>øP1 5.70 5.90 ISSUE DATE<br>Q 5.96 6.36 05.06.2018<br>**----- End of picture text -----**<br>
Note: For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC6006826 and IEC60068227). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of <20µm per 100mm and roughness of <10µm.
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Revision�History**
IKFW50N60DH3E
## **Revision:�2017-09-21,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-09-21|Final data sheet|
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Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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