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IKFW40N65ES5XKSA1
IGBT, 650 V, 60 A, 106W, HSIP247, 1.35 Vsat
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 106W
- Transistor Mounting: Through Hole
- Transistor Case Style: HSIP247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.65 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
## IKFW40N65ES5
## TRENCHSTOP[TM]
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TRENCHSTOP [TM]<br>**----- End of picture text -----**<br>
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Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>« Very Low V CEsat , 1.35V at nominal current<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>* 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with full rated RAPID 1 fast antiparallel diode<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>« Resonant converters = Cc «<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKFW40N65ES5|650V|30A|1.35V|175°C|K40EES5|PG-HSIP247-3-2|
Datasheet www.infineon.com
2020-09-17
IKFW40N65ES5
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Datasheet
IKFW40N65ES5
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C<br>_T_h=65°C|_I_C||60.0<br>48.0<br>52.01)|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C|_I_F||56.0<br>43.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||106.0<br>78.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.20|1.41|K/W|
|Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.37|1.51|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
> 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier insulator
> 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
> 3) At force on body F = 500N, Ta = 25ºC
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.35<br>1.60|1.70<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1400|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|42.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|55|-||
|Reverse transfer capacitance|_C_res||-|7|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|70.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=13.0Ω,_R_G(off)=13.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|124|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.56|-|mJ|
|Turn-off energy|_E_off||-|0.32|-|mJ|
|Total switchingenergy|_E_ts||-|0.88|-|mJ|
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## TRENCHSTOP[TM] �5�Advanced�Isolation
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1200A/µs|-|75|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.83|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-900|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=13.0Ω,_R_G(off)=13.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|149|-|ns|
|Fall time|_t_f||-|55|-|ns|
|Turn-on energy|_E_on||-|0.77|-|mJ|
|Turn-off energy|_E_off||-|0.53|-|mJ|
|Total switchingenergy|_E_ts||-|1.30|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1200A/µs|-|110|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.75|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|26.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1000|-|A/µs|
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Datasheet
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IKFW40N65ES5
## TRENCHSTOP[TM] ~~-~~
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120 60<br>100 TI 50 NEE<br>&<br>eI\) 80 te LK 40<br>7a eee<br>60 30<br>w :<br>40 20<br>PP NAN<br>20 10<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T h , HEATSINK TEMPERATURE [°C] T h , HEATSINK TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>90 90<br>VGE = 20V VGE = 20V<br>80 18V 80 18V<br>15V 15V<br>ae ta<br>70 70<br>12V 12V<br>= Wh Zo<br>10V 10V<br>60 60<br>8V 8V<br>50 7V 50 7V<br>6V 6V<br>40 40<br>5V 5V<br>30 30<br>20 20<br>oe) Coe e e eeeee<br>10 10<br>-— ps——y\ |pAoo<br>0 C U L 0 L A<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=175°C)
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IKFW40N65ES5
## TRENCHSTOP[TM]
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90 Ld 3.0<br>Tvj = 25°C ! IC = 15A<br>Tvj = 150°C IC = 30A<br>80 EU) IC = 45A<br>ff). -E -<br>| j S 2.5<br>70 | 5<br>_ E<br>60 2.0<br>Pa rE<br>im <x<br>5 50 i<br>w 1.5<br>Oo 40 iroa<br>aa | e)<br>:5 30 Pf :a 1.0 a a<br>ne<br>20<br>0.5<br>10<br>0 0.0<br>2 3 4 5 6 7 8 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
Figure 6.
( _V_ GE=15V)
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1000 a SS SS SS 1000 a SS SS ES SS<br>I|1 tttd(off)fd(on) a es eS eeee ee |i| tttd(off)fd(on) poaa es ee ee ee<br>tr tr<br>FE fs FE |} ee<br>| a | P p pee<br>pt | | | | | p rt}<br>ray= 100 N eee ry 100 P ZO O<br>J) [Drees] tT tt<br>ip) PS fh fh ft = a SS<br>uw PN ip) a<br>= a a SS | a a<br>- a ee ee ee = e r re a eee eee<br>a ee e<br>Q a ee ee eeeee ee e e<br>ef ee eer<br>E E od “e<br>= = le<br>2)° 10 a Ss 2) 10 Se<br>aa a<br>aseee i ee ee aa eea eeee ee ee<br>et | | P| te | |<br>1 1<br>0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=13 Ω ; _R_ Goff=13 Ω , test circuit in Figure E)
Figure 8. Typical **resistance**
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _I_ C =30A, dynamic test Figure E)
Datasheet
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IKFW40N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1000 aa 6<br>| 1 td(off) a aee aee ee typ.<br>I tf a ee ee ee eee _ min.<br>td(on) max.<br>I a eeee<br>tr 5<br>| a a ee ee ee W<br>1<br>100 4<br>ip) po (e) se<br>im— a a a | ee sS,<br>= a ee ee ee oO ars<br>- a es ee ee Wy —<br>3<br>OQ a ee ee ee ee ee — ——<br><== | | | | | | | -¢ ~~ |<br>O Ww ~~<br>E fF ~<br>2) 10 a eS = 2 =~<br>7 a 7 ~<br>po Ww ~<br>ee<br>a ee se x<br>a eseo)<br>1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=0/15V, ( I C=0.3mA)<br>I C =30A, R Gon=13 Ω ; R Goff=13 Ω , dynamic test<br>circuit in Figure E)<br>5.0 2.5<br>Eoff Eoff<br>4.5 Eon Eon<br>Ets Ets<br>= | 4 7<br>ip)— 4.0 4 —2 2.0 ¢<br>& / & ea °<br>3.5<br>(op) / n o<br>O 7 fe) 7<br>—! 3.0 / a 1.5 ?<br>> A > a<br>Wi 2.5 Wi<br>4<br>2 2.0 / 2 1.0 =<br>O4O<br>BfE 1.5 AE Le<br>a CA LD Ae, E 2 —<br>® fA ee a (<br>- 1.0 a’ Ama ®- 0.5 a e“TO<br>7<br>eeeoa ee ee<br>0.5 vv tT} OLE<br>eaeTiAe<br>0.0 Ss li |i t y ; 0.0 LLL TT<br>0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistance<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =150/V, R Gon=13 Ω , R Goff=13 Ω , dynamic V GE =0/15V, I C =30A, dynamic test circuit in<br>test circuit in Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>
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6<br>typ.<br>min.<br>max.<br>5<br>4<br>se<br>ee sS,<br>ars<br>—<br>3<br>— ——<br>~~ |<br>~~<br>~<br>2 =~<br>~<br>~<br>1<br>0<br>25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C]<br>**----- End of picture text -----**<br>
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IKFW40N65ES5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1.75 1.75<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>1.50 1.50<br>a a o”<br>E 1 £ at<br>n “oe nD oe<br>(op)W 1.25 o “o io)ma 1.25 o oa<br>aa] Prat aa] a<br>> - > -<br>O - O eo<br>o a “<br>Ww 1.00 Ww 1.00<br>Zz 7 z a<br>Ww _* Ww Pra s<br>© “ © ae -<br>L -— L<br>OO 0.75 0.75<br>E<br>-<br>-_<br>_— _-—Bs E - a<br>0.50 0.50<br>0.25 0.25<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=0/15V,<br>I C =30A, R Gon=13 Ω , R Goff=13 Ω , dynamic<br>circuit in Figure E)<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =30A, _R_ Gon=13 Ω , _R_ Goff=13 Ω , dynamic circuit in Figure E)
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**----- Start of picture text -----**<br>
16 =. V CC 1E+4 [$< Cies<br>Or SSSY / i ——————<br>—=- V CC =520V / 1 Coes a<br>14 a | Cres eeee ee<br>12 1000<br>S | { | [| [ 7 TT<br>oO —_ a es<br><x LL a<br>10<br>FE y, 2 Ce<br>e ye sg<br>Zz :<br>ke= 8 /. iO 100 aai se<br>= / x a et<br>wi a pe<br>LI 6 fo cS) a<br>: 4 PAL Lt | 10 pe |<br>eea a ae ite eae<br>a es ss ee<br>2 a eeee<br>0 1<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=30A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1 1<br>= Se ee ance Peen<br>N4 CO SSI CoM eg Co oo | 2 A<br>ATT a OPM<br>O eR ce aa S) ET, eT aan<br>D = 0.5 D = 0.5<br>ZgWI atiimat y/yn AATMTA ul SHA=a |<br>0.2 0.2<br>0.1 TAAL 2 0.1 if<br>a ee 0.1 a heOCs 0.1<br>~¢ a COOCon<br>S TCO 0.05 CO Co on <ioS Be9 0.05 |COCoo<br>0.02 0.02<br>Bex CVV TTT Ce| / |<br>0.01 0.01<br>F TACTeer ACTH = 7A<br>single pulse single pulse<br>6iu CUTEIE LTTE 24CIT ani a eT<br>; 0.01 e e,t mgteer| re “ll Zz3 0.01 cCoC a, SCR HH<br>k BT A | | || Wl} oe TAT I TTT iil<br>- PVAAA PTIPETTITTUII cers Co=raiRe {lll > ANT IETT) cum, co=rir, — Illi<br>PI UT CA oot oom BP All |<br>TTT PT ET TE PET A<br>i: 1 2 3 4 5 6 7 i: 1 2 3 4 5 6 7<br>ri[K/W]: 6.4E-3 0.221235 0.28266 0.2373 0.32529 0.194565 0.016527 ri[K/W]: 0.202274 0.337235 0.289542 0.199229 0.422136 0.046667 9.6E-3<br>τ i[s]: 2.6E-5 2.9E-4 2.7E-3 0.022781 0.287773 1.293153 18.6881 τ i[s]: 2.4E-4 1.4E-3 8.6E-3 0.071422 0.525208 3.996801 20.96846<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>h)th(j- h)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT ( _D_ = _t_ p/T)
Figure 18. Diode function ( _D_ = _t_ p/T)
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200<br>Tvj = 25°C, IF = 30A<br>Tvj = 150°C, IF = 30A<br>175<br>150<br>uw N<br>125<br>is<br>> ~<br>g 100 ~~<br>: oP<br>75 > ft | Pt<br>uwi Ls<br>ow| 5025 Pi | ftp<br>0<br>600 800 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=400V)
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2.00<br>Tvj = 25°C, IF = 30A<br>Tvj = 150°C, IF = 30A<br>1.75<br>~<br>_ -—<br>1.50<br>Y<br>1.25<br>5<br>><br>Ww 1.00<br>a<br>: Ere<br>: 0.75 S —<br>ow<br>Tf 0.500.25 Pf] tt pl<br>0.00<br>600 800 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 20.
( _V_ R=400V)
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## TRENCHSTOP[TM]
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40 0<br>Tvj = 25°C, IF = 30A Tvj = 25°C, IF = 30A<br>Tvj = 150°C, IF = 30A Tvj = 150°C, IF = 30A<br>35 —— _ -200<br>a<br>-400<br>b 30 \<br>Zz = Le<br>-600<br>5 25 2 a \<br>> n" -800 \\ \<br>: LL<br>20<br>: eet \<br>Si [7 aa—— FL:< -1000 RA\ ‘<br>15<br>ag Ww -1200 NN<br>10<br>oré Pfa(e) -1400 KK\<br>5<br>-1600<br>0 -1800<br>600 800 1000 1200 1400 1600 1800 2000 600 800 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 21.
Figure 22.
( _V_ R=400V)
( _V_ R=400V)
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**----- Start of picture text -----**<br>
90 2.50<br>Tvj = 25°C / IF = 15A<br>Tvj = 150°C / IF = 30A<br>80 2.25 IF = 45A<br>70<br>2.00<br>= 60 Ww<br>= fi "| 1.75 panececpr aan<br>si g<br>D 50 e)<br>O/><br>: :Q 1.50 P| | tt<br>eat 40 | | lf ra<x<br>1.25<br>30<br>1.00<br>20<br>0.75<br>10<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **PG-HSIP247-3-2**
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**----- Start of picture text -----**<br>
MILLIMETERS MILLIMETERS<br>DIMENSIONS DIMENSIONS<br>MIN. MAX. MIN. MAX.<br>A - 5.18 e 5.44<br>A1 4.70 4.90 E 15.70 15.90<br>A2 2.16 2.66 E1 13.68 13.88<br>DOCUMENT NO.<br>A3 0.20 0.28 E2 (6.00)<br>Z8B00195711<br>A4 1.30 1.50 E3 3.24 3.44<br>A5 0.31 0.51 E4 4.39 4.59 REVISION<br>A6 1.70 1.90 E5 (1.45) 01<br>A7 (0.25) E6 0.76 0.96<br>b 1.10 1.30 L 18.01 18.21 SCALE 3:1<br>b1 (2.88) L1 2.26 2.46 0 1 2 3 4 5 6 7 8mm<br>b2 (1.60) L2 1.50 1.70<br>b3 - 0.15 P 3.50 3.70<br>c 0.50 0.70 P1 5.70 5.90 EUROPEAN PROJECTION<br>D 22.70 22.90 Q 6.06 6.26<br>D1 16.96 17.16<br>D2 2.34 2.54<br>D3 - 0.30<br>ISSUE DATE<br>D4 4.35 4.55<br>28.06.2019<br>D5 19 70 19 90<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Revision�History**
IKFW40N65ES5
## **Revision:�2020-09-17,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2020-09-17|Final Data Sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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