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IKFW40N65DH5XKSA1
IGBT, 53 A, 1.8 V, 106 W, 650 V, HSIP247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 106W
- Transistor Mounting: Through Hole
- Transistor Case Style: HSIP247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 53A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.8V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.94 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## IKFW40N65DH5
## TRENCHSTOP[TM]
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High speed 5 IGBT in TRENCHSTOP TM _ 5 technology copacked with RAPID 1<br>fast and soft antiparallel diode in fully isolated package<br>Features and Benefits: C<br>TRENCHSTOP [TM] 5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>* 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>* Very soft, fast recovery antiparallel diode<br>¢ Maximum junction temperature 175°C<br>*2500V RMS electrical isolation, 50/60Hz, t=1min<br>* 100% tested isolated mounting surface<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models: Sf<br>http://www.infineon.com/igbt/<br>Potential Applications: =F 2<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKFW40N65DH5|650V|40A|1.8V|175°C|K40EDH5|PG-HSIP247-3-2|
Datasheet www.infineon.com
2020-07-27
IKFW40N65DH5
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Datasheet
IKFW40N65DH5
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C<br>_T_h=65°C|_I_C||53.0<br>43.0<br>52.01)|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C|_I_F||37.0<br>29.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||106.0<br>78.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.20|1.41|K/W|
|Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.93|2.27|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
> 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier insulator
> 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
> 3) At force on body F = 500N, Ta = 25ºC
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.80<br>2.25|2.25<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.45|1.90<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>4000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|45.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|45|-||
|Reverse transfer capacitance|_C_res||-|7|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|70.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=14.0Ω,_R_G(off)=14.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|29|-|ns|
|Turn-off delaytime|_t_d(off)||-|105|-|ns|
|Fall time|_t_f||-|16|-|ns|
|Turn-on energy|_E_on||-|1.17|-|mJ|
|Turn-off energy|_E_off||-|0.50|-|mJ|
|Total switchingenergy|_E_ts||-|1.67|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
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## TRENCHSTOP[TM] �5�Advanced�Isolation
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|64|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.51|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-840|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=14.0Ω,_R_G(off)=14.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|29|-|ns|
|Turn-off delaytime|_t_d(off)||-|124|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|1.39|-|mJ|
|Turn-off energy|_E_off||-|0.57|-|mJ|
|Total switchingenergy|_E_ts||-|1.96|-|mJ|
## **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1000A/µs|-|103|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.24|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|17.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-502|-|A/µs|
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IKFW40N65DH5
## TRENCHSTOP[TM]
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110 60<br>100 SEE<br>50<br>90<br>VOR<br>80<br>J XSEES PIX<br>40<br>70<br>gs | \|g<br>60<br>EAS AETENE<br>30<br>50<br>BP] LUN ~<br>40<br>PEEENE ELA 20<br>30<br>20<br>po tN 10 \<br>10<br>pee LLL<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>A<br>T h , HEATSINK TEMPERATURE [°C] T h , HEATSINK TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of heatsink Figure 2. Collector current as a function of heatsink<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ 15V, T j ≤ 175°C)<br>120 120<br>VGE = 20V VGE = 20V<br>100 100<br>18V 18V<br>Ber Pee<br>15V 15V<br>80 12V 80 12V<br>10V 10V<br>8V 8V<br>An == 7YY<br>60 a= 60 7/2<br>7V 7V<br>6V 6V<br>40 5V 40 5V<br>20 20<br>FXa LAaF<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
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IKFW40N65DH5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
120 LC ] 3.5<br>Tvj = 25°C IC = 20A<br>Tvj = 150°C IC = 40A<br>IC = 60A<br>100 3.0<br>z<br>Oo<br>ll<br>z | Pa<br>Z 80 > 2.5<br>Wwia F7)<br>cc or _-<br>8 E -e-7<br>oc 60 Ss 2.0 ==<br>we J<br>O2| Ww [5] — we<br>40 | 1.5<br>-_<br>re)<br>20 J 1.0<br>,<br>/ ;<br>7<br>0 0.5<br>2 3 4 5 6 7 8 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
Figure 6. Typical a function ( _V_ GE=15V)
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1000 a a 1000 a SS SS ES ES<br>| 1 td(off) a a ee ee ee | td(off) a ee<br>I tf p o | tf ee<br>td(on) td(on)<br>tr tr<br>F p FE bee<br>| a a ee ee ee ee | fiLhe<br>ee ee | | oben | |<br>= 100 aeeeTeece ee= 100 e a e<br>ip)uw ae ee ee ne ip) a esreeee<br>= a a eS ee a a Ph<br>- aa eseeeeedes eee = aa aeeerr aa ee<br>Q poe eg a ee ee ee<br>a a fe es | | | |<br>: <r eet<br>— <i er Pa<br>= =<br>2)- 10 aaa ee 2)- 10 aa ee<br>a ee ee<br>aa<br>aa ee se aeeee ee<br>a Deee<br>a Po | ot tT | dT<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=14 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
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## IKFW40N65DH5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1000 LS 6.0 4<br>| td(off) a ee ee ee typ.<br>tf 5.5 min.<br>II td(on) aa e e e — = max. |<br>tr<br>| a ee ee ee 5.0 Td<br>a es es Kk<br>4.5<br>ry_ 100 eeEs meene e s ee |a ~~ roe<br>ip) se i —<br>im po (e) 4.0 Sen<br>= a a a =<br>F a a ee ~~<br>OQ e [[] s [ef] ee| | | CEWy 3.5 — “SSA,aa<br>oe oO ee WW 3.0 ee~ _—<br>: 10 E “SLL ~<br>7 poa Ww 2.5<br>ee ~<br>a eseo) 2.0 ~<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(ind. load, V CE =400V, V GE =0/15V, I C=40A, ( I C=0.4mA)<br>r G=14 , test circuit in Fig. E)<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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7 6<br>Eoff Eoff<br>Eon Eon<br>Ets 4 Ets<br>6<br>c 5<br>a / a o<br>op)Ww 5 7 4 ie)Ww ca“<br>io)7) ’, (2)7) 4 ”? ?<br>@) / @)<br>4<br>WwWra / Yo 4Wi 3 oa L<br>Zz 7 Z a -<br>uwoO 3 7 v4 uwoO Y o - -<br>Zz , 7 Zz ia -<br>Ir / 7 Ir 7 “7<br>E foe4 E 2 °<br>= 2 7 V4 = a7<br>: 7<br>ra“eoWa |e 1 LL |TO<br>1 fo TT<br>ge<br>0 0<br>0 20 40 60 80 100 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =150°C, V CE =400V, V GE=0/15V, (ind. load, T j =150°C, V CE =400V, V GE=0/15V,<br>R G=14 , test circuit in Fig. E) I C =40A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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IKFW40N65DH5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
3.0 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>2.5 2.5<br>oy oy<br>& & -<br>it a it u “7<br>7) 2.0 : 7) 2.0 Pia<br>o -— o ?<br>O --" (e) Pron<br>—! _ —! 7<br>> aa > on<br>O 19) a<br>1.5 1.5<br>aU) _l— =_— —_— a . oeca _ _—_ —<br>= —— U)Z “¢ - - -<br>i<br>1.0 1.0<br>nn<br>0.5 0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(indload, V CE =400V, V GE =0/15V, I C=40A, (ind. load, T j =150°C, V GE =0/15V, I C=40A,<br>R G=14 , test circuit in Fig. E) R G=14 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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16 P|<br>V CC Cies<br>_—— V CC = 520V 1E+4 H Coes ——————————<br>14 Cres<br>a a<br>e e ee<br>12<br>FE~ 10 Vy RoLe 1000 e a e<br>OQ~ VY W aAe ee<br>z<br>~ / 2 Pe<br>- 8 E<br>E: o! S| 100<br>S 1, ee<br>uw x E EEe<br>6 —— So<br>: ee ee<br>6" Neee ee<br>4<br>10 ee ee<br>a<br>2 a<br>0 1<br>0 10 20 30 40 50 60 70 80 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHZz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1<br>1<br>D = 0.5 D = 0.5<br>© DeAr y/ Al i<br>0.2 0.2<br>Z TinFT CATaA, alILI © ScieUT TTeT297 (int maa<br>aSecret)AMC'W/, 0.10.05 O aTei!Poll! /A 0.10.05<br>Seem— 0.1 a, oeAN | |nen 0.02 ooo a— 0.1 AMIEA nm | 0.02<br>0.01 0.01<br>04 SC aac single pulse «TT oF Sa se single pulse COC CPT<br>BS ci 2 OR<br>a l Hay<br>Uf IHet = COMCASTx aalll y TT<br>/ i qe<br>a 0.01 A a 0.01 i<br>Fr Dy vl Ana CHT ll<br>- PANTPAA PIII PI TT cere, comtaire {Ili - TI |<br>PI TUT PAT Tf CC ZC COI TC TTT<br>i: 1 TTT 2 3 PT 4 ET 5 TV 6 PTET 7 P {W i: CCUM 1 CE 2 3 4 5 6<br>ri[K/W]: 6.4E-3 0.221235 0.28266 0.2373 0.32529 0.194565 0.016527 ri[K/W]: 0.40677 0.673995 0.31059 0.30828 0.345765 0.022229<br>τ i[s]: 2.6E-5 2.9E-4 2.7E-3 0.022781 0.287773 1.293153 18.6881 τ i[s]: 2.3E-4 1.4E-3 0.012128 0.160012 0.781857 15.94134<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>h)th(j- h)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 17.
( _D_ = _t_ p/T)
Figure 18. Diode function ( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
250<br>Tvj = 25°C, IF = 20A<br>Tvj = 175°C, IF = 20A<br>200<br>DO \<br>EL \UU<br>:<br>150<br>keWw \ \<br>Luef \peel<br>ep) 100<br>Wwé \<br>pf NC;<br>50<br>0<br>200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
1.4<br>Tvj = 25°C, IF = 20A<br>Tvj = 175°C, IF = 20A<br>1.2<br>2,<br>1.0<br>x=<br>:ag> 0.8 ef | tt<br>0.6<br>fg<br>uw<br>:ag Ff<br>|<br>0.40.2 ef tt |<br>0.0<br>200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 20.
( _V_ R=400V)
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IKFW40N65DH5
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
18 LE . 0 LE<br>2<br>Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>16 EJ, Tvj = 150°C, IF = 20A 7 -100 Tvj = 150°C, I es F = 20A<br>es | JE<br>y g<br>< 4 <x,<br>14 -200<br>a= 12 7 4 r g2 -300 \<br>10 -400<br>feWw 4 fe)<br>O 8 Ae oe -500 +><br>W x<br>QD 6 Lo a -600 \<br>S Q<br>ff O<br>:Sf 4 “~} of ft | : -700 awNN<br>2 -800<br>ee ee ee<br>0 -900<br>200 400 600 800 1000 1200 200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>120 2.50<br>Tvj = 25°C IF = 10A<br>Tvj = 150°C IF = 20A<br>= P| / / / 2.25 IF = 40A<br>100 || /<br>2.00<br>= 80 Ww<br>= "| 1.75 aaa<br>i i 2<br>5 oO<br>s): /; >Bf<br>z 60 Q 1.50<br><x<br>t / a<br>=z 1.25<br>40<br>1.00<br>20<br>0.75<br>0 0.50<br>0 1 2 3 4 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
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**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �5�Advanced�Isolation
## **PG-HSIP247-3-2**
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**----- Start of picture text -----**<br>
MILLIMETERS MILLIMETERS<br>DIMENSIONS DIMENSIONS<br>MIN. MAX. MIN. MAX.<br>A - 5.18 e 5.44<br>A1 4.70 4.90 E 15.70 15.90<br>A2 2.16 2.66 E1 13.68 13.88<br>DOCUMENT NO.<br>A3 0.20 0.28 E2 (6.00)<br>Z8B00195711<br>A4 1.30 1.50 E3 3.24 3.44<br>A5 0.31 0.51 E4 4.39 4.59 REVISION<br>A6 1.70 1.90 E5 (1.45) 01<br>A7 (0.25) E6 0.76 0.96<br>b 1.10 1.30 L 18.01 18.21 SCALE 3:1<br>b1 (2.88) L1 2.26 2.46 0 1 2 3 4 5 6 7 8mm<br>b2 (1.60) L2 1.50 1.70<br>b3 - 0.15 P 3.50 3.70<br>c 0.50 0.70 P1 5.70 5.90 EUROPEAN PROJECTION<br>D 22.70 22.90 Q 6.06 6.26<br>D1 16.96 17.16<br>D2 2.34 2.54<br>D3 - 0.30<br>ISSUE DATE<br>D4 4.35 4.55<br>28.06.2019<br>D5 19 70 19 90<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �5�Advanced�Isolation
## **Revision�History**
IKFW40N65DH5
## **Revision:�2020-07-27,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2020-07-27|Final Data Sheet|
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## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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