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IKD15N60RATMA1
IGBT, 30 A, 1.65 V, 250 W, 600 V, TO-252 (DPAK), 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP RC Series
- Power Dissipation: 250W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 7500 |
| Price | 0.398 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT ## IKD15N60R TM IKD15N60R ## TRENCHSTOP[TM] **==> picture [226 x 217] intentionally omitted <==** **----- Start of picture text -----**<br> Features:<br>TRENCHSTOP [TM] Reverse Conducting (RC)<br>applications offering<br>¢ Optimised V CEsat and V_ F for low conduction losses<br>* Smooth switching performance leading to low EMI<br>* Very tight parameter distribution<br>¢ Operating range of 1 to 20kHz<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us<br>¢ Best in class current versus package size<br>* Qualified according to JEDEC for target<br>¢ Pb-free lead plating; ROHS compliant (for<br>temperature 260°C, MSL1)<br>* Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>* Consumer motor drives<br>**----- End of picture text -----**<br> **==> picture [96 x 231] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>C<br>pn<br>“Cp heap<br>“<52.9<br>Pa<br>G<br>ao<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IKD15N60R|600V|15A|1.65V|175°C|K15R60|PG-TO252-3| Datasheet www.infineon.com 2014-03-12 IKD15N60R **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 V�2.4 2014-03-12 Datasheet IKD15N60R **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||30.0<br>15.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A| |Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||45.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||30.0<br>15.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A| |Gate-emitter voltage|_V_GE||±20|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs| |Powerdissipation_T_c=25°C|_P_tot||250.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|0.60|K/W| |Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|2.00|K/W| |Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W| |Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W| 1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. V�2.4 2014-03-12 Datasheet 4 IKD15N60R **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.85|2.10<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.70<br>1.70|2.10<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.25mA,_V_CE=_V_GE|4.3|5.0|5.7|V| |Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|9.4|-|S| |Integratedgate resistor|_r_G|||none||Ω| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|961|-|pF| |Output capacitance|_C_oes||-|53|-|| |Reverse transfer capacitance|_C_res||-|33|-|| |Gate charge|_Q_G|_V_CC=480V,_I_C=15.0A,<br>_V_GE=15V|-|90.0|-|nC| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|112|-|A| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|16|-|ns| |Rise time|_t_r||-|10|-|ns| |Turn-off delaytime|_t_d(off)||-|183|-|ns| |Fall time|_t_f||-|136|-|ns| |Turn-on energy|_E_on||-|0.37|-|mJ| |Turn-off energy|_E_off||-|0.53|-|mJ| |Total switchingenergy|_E_ts||-|0.90|-|mJ| 1) Not subject to production test - verified by design/characterization V�2.4 2014-03-12 Datasheet 5 IKD15N60R **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1300A/µs|-|110|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.76|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|20.5|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1640|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|15|-|ns| |Rise time|_t_r||-|11|-|ns| |Turn-off delaytime|_t_d(off)||-|212|-|ns| |Fall time|_t_f||-|218|-|ns| |Turn-on energy|_E_on||-|0.41|-|mJ| |Turn-off energy|_E_off||-|0.84|-|mJ| |Total switchingenergy|_E_ts||-|1.25|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1300A/µs|-|190|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|1.70|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|27.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-280|-|A/µs| 6 V�2.4 2014-03-12 Datasheet IKD15N60R ## TRENCHSTOP[TM] **==> picture [476 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>SSS<br>11 TLL) a<br>10 TRACI ih TT UPFESTANNNORE SET aT<br>9 CTI calll<br>SL SSI 10 FPSST]<br>5 HMEENTE\ SESE SPCNe<br>8<br>= TUE & OSE<br>eT 5 a tp=1µs a ok<br>7 TUM tv | |Ee<br>tvoe TU AUIT EUHI @ = Eee SeatNeer TTTT<br>10µs<br>8] oe Re<br>6 20µs<br>go eeA PEIN TUM) 8ce ay oarTI S|NTI<br>5 50µs<br>EC M 8 easiness<br>1 200µs<br>e)2] 4 TUM EIN ELM e) aEee ee<br>500µs<br>CCITT); 3 \ ®2 svSear<br>aa\ a DC Orell<br>2<br>1 CPom Ptot=8,6W, Rthja=8K/W C o o c,AT) ec<br>0 0.1<br>0.1 como 1 10 TN il 100 1 CUI 10 LE 100 TE 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>(Tvj ≤ 175°C, Ta=55°C, D=0.5, VCE=400V,<br>VGE=15/0V, rG=15 Ω , PCB mounting with<br>thermal vias and heatsink, see Appnote:<br>www.infineon.com/igbt)<br>250 35<br>30<br>200<br>25<br>150<br><x-a oaSEENGEEEoaa) 20<br>7) oO<br>2) or<br>15<br>100<br>oO 1<br>a©<br>10<br>50<br>5<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br> Datasheet 7 2014-03-12 IKD15N60R ## TRENCHSTOP[TM] **==> picture [474 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 45 45<br>40 40<br>of] LW LF<br>35 VGE=20V 4) = 35 VGE=20V a<br>Bl eZ,<br>17V 17V<br>30 | 30 /<br>WW 15V WW 15V<br>13V 13V<br>25 25<br>11V 11V<br>20 9V 20 9V<br>Ww / wy<br>7V 7V<br>15 15<br>10 10<br>aN<br>5 5<br>a) eee) A D<br>V,<br>0 0<br>| 4 A<br>0 1 2 3 4 0 1 2 3 4<br>P—S—— |<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>45 3.5<br>Tj=25°C IC=7.5A<br>Tj=175°C IC=15A<br>40 IC=30A<br>3.0<br>eee et<br>35<br>x= x 2.5 = a<br>e f ee e<br>30<br>/<br>Ante<br>2.0<br>25<br>es EEE<br>5toy 20 W 1.5<br>15<br>| Fe<br>1.0<br>ee ee<br>10<br>0.5<br>oy eee oe<br>5<br>0 0.0<br>4 6 8 10 12 14 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=10V) a function of junction temperature<br>I C I C<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br> ( _V_ GE=15V) 8 Datasheet 2014-03-12 IKD15N60R ## TRENCHSTOP[TM] **==> picture [474 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aaa 1000<br>a a es se | td(off) ee ee ee ee<br>tf<br>a NG a ee ee ee eee 1I td(on) poa a<br>tr<br>a p et<br>el = 100 t td(off) a e.| =fe 100 ate<br>tf<br>ip)im 1|1| td(on) poaa aes a ip) aaa ee<br>tr<br>= = = a<br>- SSS es ee<br>OQ a eeeeee a eeee ee<br>a eee<br>E E eee ae<br>eB ofscopoee TPB leche<br>2) 10 a ee 2) 10 TTT TIO<br>7 (a se 7 a<br>po a es<br>a ee<br>po eT a ee<br>a a es a ee<br>a re a ee ee ee<br>1 1<br>0 5 10 15 20 25 30 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω , Dynamic test circuit in V GE =15/0V, I C =15A, Dynamic test circuit in<br>Figure E) Figure E)<br>1000 aa 7<br>| 1 td(off) a aee ee ee typ.<br>I tf p o — min.<br>td(on) max.<br>tr<br>F he S =<br>| a ee ee ee ee Ww 6<br>e e eee<br>_ —|— — =<br>a O ~s<br>— 100 a eS a 7s<br>ip) a a ~~<br>uw poa a (oe) 5 ss<br>= a a NS _<br>- a Wy ae<br>Q ee ee ee :: os<br>ee ee~~<br>E = 4 = —<br>5 10 [ood < —<br>. a ee Ww ~~<br>a es 7 ~~<br>po wi<br>ee ~<br>a ee se x ~~<br>a eseo) 3 ~<br>1 2<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. (inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=15 , Dynamic test circuit in Figure E) Figure 12. ( _I_ C=0.25mA) 9 Datasheet 2014-03-12 IKD15N60R ## TRENCHSTOP[TM] **==> picture [488 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5 1.8<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>= aé = a —<br>/ 1.5 ao<br>2 2.0 5 ee<br>ie) / (op) v7 “<br>nm / Ww Lot<br>a / 1.2<br>O—! 1.5 uA/ Oo—! “7aa<br>& / &<br>x y [7] 7 x 0.9 +<br>a/<br>1.0<br>=<br>=O ra 4 a a =x= 0.6 a_<br>Ee O =<br>aZa Ee _<br>7 —_<br>- 0.5 y“ LZO a= _ [—_] -T~<br>0.3<br>7/ ia =<br>a Za _<br>- [=]<br>ao<br>0.0 0.0<br>0 5 10 15 20 25 30 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>E E<br>**----- End of picture text -----**<br> Figure 13. **==> picture [151 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> Figure 14. **==> picture [151 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, I C =15A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> **==> picture [490 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1.5 1.5<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>z ce aa > ue<br>op) L ooo (ep) L “7<br>Lu 7 am Lc<br>7)icp) 1.0 oT Pas 7)icp) 1.0 “7<br>—! - —!<br>t ed COG ae<br>a oo e [|<br>=r<br>pf=r —eft=<br>5 0.5 5 0.5<br>EE _|—--<br>n<br>0.0 0.0<br>25 50 75 100 125 150 175 300 350 400 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br> Figure 15. (inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=15 , Dynamic test circuit in Figure E) Figure 16. (inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =15A, _r_ G=15 , Dynamic test circuit in Figure E) 10 Datasheet 2014-03-12 IKD15N60R ## TRENCHSTOP[TM] **==> picture [233 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>120V<br>480V<br>14<br>J \/<br>_ 12 /| /<br>2 7<br>ul<br><a 10 /\/<br>oc<br>Lu ey E 8 a<br>E<br>=<br>Ww<br>uwE 6<br>5<br>- 4<br>2<br>0<br>0 20 40 60 80 100<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br> Figure 17. Typical ( _I_ C=15A) **==> picture [230 x 251] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a<br>( a es es es<br>Cies<br>_ a<br>| Coes a ee<br>Cres<br>| eea<br>ro |<br>nT. i\<br>2 \\<br>7E VN<br>= VON<br>ialZ 100 a\ ><br>< a Ss<br>oO Neae ee eee<br>- apoaeee<br>i ee<br>10<br>0 5 10 15 20 25 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>**----- End of picture text -----**<br> Figure 18. **==> picture [18 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V GE<br>**----- End of picture text -----**<br> **==> picture [490 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 175 14<br>12<br>= =<br>150<br>fi LZ g<br>ia uw<br>ac© =a 10<br>or Zz<br>e 125 | <<br>a= 2 8<br>fe) =E<br>O EK<br>6<br>5 100 3<br>ocO/ a<br>kK adkK 4<br>o (e)<br>(e) -_<br>O . O<br>75<br>2<br>50 0<br>12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 19. Typical short circuit collector current as a Figure 20. Short circuit withstand time as a function of<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 400V, start at T vj=25°C) ( V CE 400V, start at T vj ≤ 150°C)<br>I C(SC) t SC<br>**----- End of picture text -----**<br> 11 Datasheet 2014-03-12 ## IKD15N60R ## TRENCHSTOP[TM] **==> picture [470 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1 Seer | Sat ae eat ee EH STIT TIT T T TI<br>S eee Waaul<br>RQ S Y<br>1<br>eS _ A D=0.5 _ AMata<br>< 0.2 AV) IT D=0.5<br>0.1 0.2<br>0.1 Seeeen TEeo<br>Wuoa= BEHeem aymii | Aan 0.05 aHAIAT|| oea= Aayy) eePll 0.1 IIITT<br>=<7 APreeA |I ee 0.020.01 TT Ty<x a e e e weana ee eal 0.050.02 MN Til<br>single pulse 0.01<br>z Te A seit | Veo<br>ero 0.1 ae A 4 single pulse<br>va Ne |) ree<br>fiicp)= 0.01 COAaA| VE"| |oe|eo| fiicp) aCUI Caraaii| aAcileee7 ailaa<br>2 eo = Co e |<br>© cet --[i] © HH -- ||<br>es a | F UM AAT =F Sel<br>a a ee cee Te I ii<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.0478 0.3033 0.2438 0.0281 ri[K/W]: 0.393 1.0808 0.4767 0.0568<br>I τ i[s]: T 9.7E-5 4.4E-4 2.0E-3 0.03723 Sail Hl H τ i[s]: 1.2E-4 3.4E-4 H 1.9E-3 0.02678<br>T eel ( IN<br>0.001 0.01<br>IM er<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br> Figure 21. ( _D_ = _t_ p/T) Figure 22. Diode function ( _D_ = _t_ p/T) **==> picture [490 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 225 2.00<br>Tj=175°C, IF = 15A Tj=175°C, IF = 15A<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>200 L [Ee 1.75 =<br>i=<br>aT O)<br>175 1.50<br>FL<br>> [O]<br>> uw<br>Oo: 150 >8 1.25<br>ow w<br>ow ~ QD<br>a 125 es a 1.00<br>re ~~ ~ ~ i-<br>™~ —_—<br>100 0.75<br>™~<br>75 0.50<br>1000 1100 1200 1300 1400 1500 1000 1100 1200 1300 1400 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> Figure 23. Typical of diode ( _V_ R=400V) Figure 24. ( _V_ R=400V) 12 Datasheet 2014-03-12 IKD15N60R ## TRENCHSTOP[TM] **==> picture [476 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 30.0 0<br>Tj=175°C, IF = 15A Tj=175°C, IF = 15A<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>Se | | §E<br>27.5<br>-400<br>— n<br>= a _ TT<br>ae 25.0 a<br>O cs -800<br>> oa<br>> 22.5 ~oO<br>2<r<br>aa0 3 1200<br>i 20.0 2 a 2 SS<br>> = . > ~<br>Ww = ~<br>e_ | Le -1600 pe—<br>17.5<br>| P|| ™~ ™~ —<br>P|<br>15.0 -2000<br>| dS<br>1000 1100 1200 1300 1400 1500 1000 1100 1200 1300 1400 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 25. Typical reverse recovery current as a Figure 26. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br> ( _V_ R=400V) **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 45 2.5<br>Tj=25°C, UG=0V IF=7.5A<br>40 Tj=175°C, UG=0V IIFF=15A=30A<br>oN OE<br>35 ~ TY<br>=si 30 Wwg 2.0<br>&a) 25 3<br>Qa Q<br>owt 20 /) ow<x<br>= =<br>wr (ag<br>15 1.5<br>: ry<br>10 fF yy : ttt t |]<br>5<br>0 1.0<br>0 1 2 3 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br> Figure 27. Figure 28. 13 Datasheet 2014-03-12 IKD15N60R **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## Package Drawing PG-TO252-3 **==> picture [391 x 283] intentionally omitted <==** **==> picture [140 x 55] intentionally omitted <==** **==> picture [129 x 40] intentionally omitted <==** |**A**<br>**DIM**<br>**b**<br>**A1**|**MILLIMETERS**|**MILLIMETERS**| |---|---|---| ||MIN<br>2.16<br>064<br>0.00|MAX<br>2.41<br>0.15<br>089| |**b3**<br>**b2**<br>**c**<br>|4,95<br>.<br>0.46<br>0.65|5.50<br>1.15<br>0.61<br>.| |**c2**|0.40|0.98| |**D**|5.97|6.22| |**D1**|5.02|5.84| |**E**|6.35|6.73| |**E1**|4.32|5.21| |**e**|2.29 (BSC)|| |**e1**|4.57 (BSC)|| |**N**|3|| |**H**|9.40|10.48| |**L**|1.18|1.78| |**L3**|0.89|1.27| |**L4**|0.51|1.02| **==> picture [83 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br> 14 V�2.4 2014-03-12 Datasheet IKD15N60R **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 15 V�2.4 2014-03-12 Datasheet IKD15N60R **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications ## **Revision�History** IKD15N60R ## **Revision:�2014-03-12,�Rev.�2.4** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |0.1|2010-02-01|-| |2.1|2011-01-17|Release of final datasheet| |2.2|2013-02-19|Changepackage| |2.3|2014-02-26|Without PB free logo| |2.4|2014-03-12|Storage temp-55...+150°C| 16 V�2.4 2014-03-12 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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